公开(公告)号：US06783640B2

公开(公告)日：2004-08-31

申请号：US10050787

申请日：2002-01-18

申请人： Toshihiro Yamashita ,  Hiroshi Echizen ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

发明人： Toshihiro Yamashita ,  Hiroshi Echizen ,  Yasuyoshi Takai ,  Hidetoshi Tsuzuki

IPC分类号： C23C1434

CPC分类号： C23C14/0042 ,  C23C14/544

摘要： In a sputtering method for forming a film on a substrate in a film forming space while monitoring emission intensity of plasma, the method comprises the steps of detecting a thickness of the film formed on the substrate; comparing a detected value with a preset value of the film thickness; and deciding a target value of the emission intensity in accordance with a compared result. With the method, a transparent conductive film is formed which has high uniformity in film thickness, sheet resistance and transmittance and hence has superior characteristics.

摘要翻译： 在监测等离子体的发光强度的同时，在成膜空间的基板上形成膜的溅射方法中，该方法包括以下步骤：检测在基板上形成的膜的厚度; 将检测值与膜厚的预设值进行比较; 并根据比较结果决定发光强度的目标值。 通过该方法，形成了透明导电膜，其膜厚度，薄层电阻和透射率均匀性高，因此具有优异的特性。

公开(公告)号：US06930025B2

公开(公告)日：2005-08-16

申请号：US10059168

申请日：2002-01-31

申请人： Akiya Nakayama ,  Hiroshi Echizen ,  Yasuyoshi Takai ,  Naoto Okada ,  Shigeo Kiso

发明人： Akiya Nakayama ,  Hiroshi Echizen ,  Yasuyoshi Takai ,  Naoto Okada ,  Shigeo Kiso

IPC分类号： C23C14/02 ,  H01L31/0224 ,  H01L31/052 ,  H01L31/18 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L31/1884 ,  C23C14/024 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/056 ,  Y02E10/52

摘要： In a process for forming on a substrate a transparent conductive film having crystallizability, the process comprises a first step of forming a film at a first film formation rate and a second step of forming a film at a second film formation rate, and the relationship between film formation rates in the respective steps satisfies: 2≦(second film formation rate)/(first film formation rate)≦100; which provides a process for producing a transparent conductive film by a deposition process advantageous for cost reduction, which can form in a short time a transparent conductive film having an uneven surface profile with a high light-confining effect, and can bring about an improvement in photovoltaic performance and enjoy a high mass productivity when applied to the formation of multi-layer structure of photovoltaic devices.

摘要翻译： 在基板上形成具有结晶性的透明导电膜的方法中，该方法包括以第一成膜速度形成薄膜的第一步骤和以第二薄膜形成速率形成薄膜的第二步骤 各步骤中的成膜速度满足：<？in-line-formula description =“In-line formula”end =“lead”？> 2 <=（第二成膜速率）/（第一成膜速率）<= 100 ; <？in-line-formula description =“In-line Formulas”end =“tail”？>，其提供了一种通过有利于成本降低的沉积工艺制造透明导电膜的方法，其可以在短时间内形成 透明导电膜具有不均匀的表面轮廓，具有高的光限制效应，并且当应用于形成光伏器件的多层结构时，可以实现光伏性能的提高并且获得高的批量生产率。

公开(公告)号：US06860974B2

公开(公告)日：2005-03-01

申请号：US10183339

申请日：2002-06-28

申请人： Hiroshi Echizen ,  Yasuyoshi Takai ,  Akiya Nakayama

发明人： Hiroshi Echizen ,  Yasuyoshi Takai ,  Akiya Nakayama

IPC分类号： C23C14/34 ,  C23C14/00 ,  C23C14/56 ,  H01L31/0224 ,  H01L31/04 ,  C23C14/32

CPC分类号： H01L31/022466 ,  C23C14/0042 ,  C23C14/0073 ,  C23C14/568 ,  H01L31/022483

摘要： There are provided techniques of forming a back reflecting layer with constant characteristics throughout long-term film formation and forming a metal oxide film so as to be able to maintain a current of a bottom cell and thereby keep a short-circuit current Jsc of a solar cell constant over a long period of time. A sputtering method is a method of forming a stack of a metal film and a metal oxide film, comprising the step 1 of forming a metal layer on a substrate, the step 2 of bringing a surface of the metal layer into contact with active oxygen, and the step 3 of forming a metal oxide film thereon after the step 2, wherein in the step 2 an amount of active oxygen at a first substrate position is different from that at a second substrate position.

摘要翻译： 提供了在长期成膜和形成金属氧化物膜时形成具有恒定特性的背反射层以便能够保持底电池的电流并由此保持太阳能的短路电流Jsc的技术 细胞常数长时间。 溅射法是形成金属膜和金属氧化物膜的堆叠的方法，其包括在基板上形成金属层的工序1，使金属层的表面与活性氧接触的工序2， 以及步骤2之后在其上形成金属氧化物膜的步骤3，其中在步骤2中，第一基板位置处的活性氧量与第二基板位置处的活性氧量不同。

公开(公告)号：US06740210B2

公开(公告)日：2004-05-25

申请号：US09973713

申请日：2001-10-11

申请人： Hiroshi Echizen ,  Toshihiro Yamashita

发明人： Hiroshi Echizen ,  Toshihiro Yamashita

IPC分类号： C23C1434

CPC分类号： C23C14/086 ,  C23C14/0036 ,  C23C14/541 ,  C23C14/562

摘要： Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.

摘要翻译： 由于控制基板的转印速度以补偿成膜速度，并且控制施加到用于加热基板的加热装置的电力，使得保持基板的热平衡，具有均匀厚度和质量的膜 即使长时间进行溅射也能够稳定地形成。

公开(公告)号：US06273955B1

公开(公告)日：2001-08-14

申请号：US08704138

申请日：1996-08-28

申请人： Takehito Yoshino ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Otoshi ,  Atsushi Yasuno ,  Kohei Yoshida ,  Koichiro Moriyama ,  Masatoshi Tanaka

发明人： Takehito Yoshino ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Otoshi ,  Atsushi Yasuno ,  Kohei Yoshida ,  Koichiro Moriyama ,  Masatoshi Tanaka

IPC分类号： C23C1600

CPC分类号： C23C16/545 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/511 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A film forming apparatus for forming a plurality of films on a substrate through a continuous process, comprising a plurality of vacuum chambers in communication to each other via connection, at least vacuum chamber having internally a treatment detachable from the vacuum chamber for fulfilling a predetermined treatment on the substrate.

摘要翻译： 一种用于通过连续工艺在基板上形成多个膜的成膜装置，包括通过连接彼此连通的多个真空室，至少具有可从真空室中分离的处理的真空室，用于实现预定处理 在基板上。

公开(公告)号：US5510151A

公开(公告)日：1996-04-23

申请号：US943991

申请日：1992-09-11

申请人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

发明人： Jinsho Matsuyama ,  Toshimitsu Kariya ,  Yasushi Fujioka ,  Tetsuya Takei ,  Katsumi Nakagawa ,  Masahiro Kanai ,  Hiroshi Echizen

IPC分类号： C23C16/511 ,  C23C16/54 ,  H01J37/32 ,  H01L21/205 ,  H01L29/872 ,  H01L31/076 ,  H01L31/20 ,  C23C16/00

CPC分类号： H01L31/076 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3277 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/872 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking it up by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting the moving substrate web to form a columnar portion to be the circumferential wall of the film-forming chamber as the substrate is moving from the pay-out mechanism toward the take-up mechanism; introducing a film-forming raw material gas through a gas feeder into the film-forming chamber; and simultaneously, radiating a microwave energy in the film-forming chamber by using a microwave applicator, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate plasma in the film-forming chamber, thereby continuously forming a deposited film on the inner wall face of the continuously moving circumferential wall exposed to the plasma.

摘要翻译： 一种用于连续地形成大面积和长度的功能性沉积膜的微波等离子体CVD方法，所述方法包括：通过用放出机构支付并通过卷取机构将其沿着纵向方向延伸移动， ; 通过弯曲和突出移动的基材卷材来形成基本上封闭的成膜室，以形成作为基板从放出机构朝向卷取机构移动的成膜室的圆周壁的柱状部分; 将成膜原料气体通过气体供给器引入成膜室; 并且同时通过使用微波施加器在成膜室内辐射微波能量，微波施加器被设计成能够沿与微波传播方向平行的方向辐射微波能量，以在成膜室中产生等离子体， 从而在暴露于等离子体的连续移动的周壁的内壁面上连续地形成沉积膜。

公开(公告)号：US5010276A

公开(公告)日：1991-04-23

申请号：US252646

申请日：1988-10-03

申请人： Hiroshi Echizen ,  Satoshi Takaki

发明人： Hiroshi Echizen ,  Satoshi Takaki

IPC分类号： H01J37/32

CPC分类号： H01J37/32247 ,  H01J37/32192

摘要： A microwave plasma CVD apparatus which comprises a treating chamber having means for supporting a body to be treated therein, a plasma generating chamber connected to the treating chamber through a metal mesh, means for introducing a gas into the plasma generating chamber, and means for introducing microwave to convert the gas into a plasma. An embodiment thereof is characterized in that an oscillator for the microwave performs continuous oscillation, the plasma generating chamber constitutes a cylindrical cavity resonator surrounded by the metal mesh and a stop or stops, and a bell-jar smaller than the cavity in length and much smaller than the cavity in inside diameter is disposed in the cavity resonator in contact with the metal mesh to constitute a reentrant cylindrical cavity resonator through control of the position of the stop and the open area ratio of the aperture of the stop. The other embodiment is characterized in that an oscillator for the microwaves performs continuous oscillation, the plasma generating chamber constitutes a cavity surrounded by the mesh and a stop or stops, a bell-jar internally contacting the cavity is disposed in contact with the mesh, and the position of the stop and the open area ratio of the aperture of the stop are controllable according to the condition of electric discharge generated in the bell-jar, whereby the cavity resonator formed before the electric discharge and the cavity resonator formed after the discharge are formed at different positions.

摘要翻译： 一种微波等离子体CVD装置，包括具有用于支撑待处理物体的装置的处理室，通过金属网连接到处理室的等离子体产生室，用于将气体引入等离子体产生室的装置，以及用于引入 微波将气体转化为等离子体。 其实施例的特征在于，用于微波的振荡器执行连续振荡，等离子体产生室构成由金属网围绕的圆柱形空腔谐振器和停止或停止，并且比长度小得多的喇叭 比内径的腔体设置在与金属网接触的空腔谐振器中，通过控制停止位置和停止孔的开口面积比来构成凹入的圆柱形腔谐振器。 另一个实施例的特征在于，用于微波的振荡器执行连续振荡，等离子体产生室构成由网状物包围并且停止或停止的空腔，内部接触空腔的钟形钟与网格接触设置，并且 挡块的位置和开口面积比可以根据钟罩中产生的放电条件来控制，由此在放电前形成的空腔谐振器和放电后形成的空腔谐振器分别为 形成在不同的位置。

公开(公告)号：US4799791A

公开(公告)日：1989-01-24

申请号：US198587

申请日：1988-05-23

申请人： Hiroshi Echizen ,  Masakatsu Ota ,  Akiyoshi Suzuki

发明人： Hiroshi Echizen ,  Masakatsu Ota ,  Akiyoshi Suzuki

IPC分类号： G01J1/42 ,  G03F7/20 ,  G01J1/00

CPC分类号： G03F7/70133 ,  G01J1/42

摘要： Illuminance distribution measuring method and apparatus, in which the quantity of light on an area irradiated by a light beam emitted from a light source is detected by a combination of first and second detectors. The first detector is movable along the area to be irradiated and detects the quantity of irradiating light incident on the area to be irradiated while moving along the area irradiated. The second detector is fixedly secured at a predetermined position relative to the light source and the area to be irradiated and receives the light beam emitted from the light source to irradiate the area to be irradiated. On the basis of the outputs from the first and second detectors, the illuminance distribution on the area irradiated is accurately measured irrespective of any intensity changes of the light beam emitted from the light source.

摘要翻译： 照度分布测量方法和装置，其中通过第一和第二检测器的组合检测由从光源发射的光束照射的区域上的光量。 第一检测器沿着被照射的区域是可移动的，并且在沿着被照射的区域移动的同时检测入射在被照射区域上的照射光的量。 第二检测器固定地固定在相对于光源和待照射区域的预定位置处，并接收从光源发射的光束照射被照射的区域。 基于来自第一和第二检测器的输出，可以精确地测量照射的区域上的照度分布，而与从光源发射的光束的任何强度变化无关。

公开(公告)号：US07641382B2

公开(公告)日：2010-01-05

申请号：US11270563

申请日：2005-11-10

申请人： Hiroshi Izawa ,  Hiroshi Echizen ,  Hirokazu Ohtoshi ,  Masatoshi Tanaka

发明人： Hiroshi Izawa ,  Hiroshi Echizen ,  Hirokazu Ohtoshi ,  Masatoshi Tanaka

IPC分类号： G01N25/72 ,  G01K13/02 ,  G01K1/00 ,  G01M3/02

CPC分类号： H01J37/3244 ,  C23C16/4401 ,  G01M3/002

摘要： In a deposited-film formation apparatus or process having the means or steps of evacuating the inside of an inside-evacuatable chamber through an evacuation piping by an evacuation means, feeding a material gas into the chamber while evacuating the inside of the chamber, and applying a high-frequency power to form a deposited film on a substrate disposed inside the chamber, a leak is detected on the basis of a measured value of a temperature sensor which detects the heat of reaction that is generated when the material gas fed into the chamber reacts with oxygen contained in air having entered from the outside, so as to be able to stop the material gas feeding.In deposited-film formation apparatus or processes making use of spontaneously ignitable gases, the leak can quickly be detected when air enters the chamber because of any unexpected accident such as a break of piping.

摘要翻译： 在具有通过排气装置通过排气管道将内部可抽空室抽空的方法或步骤的沉积膜形成装置或方法中，在抽空室内时将原料气体进料到室中，并施加 在设置在室内的基板上形成沉积膜的高频电力，基于检测供给到室内的原料气体产生的反应热的温度传感器的测定值来检测泄漏 与从外部进入的空气中所含的氧气反应，以便能够停止原料气体供给。 在使用自发点燃气体的沉积膜形成装置或工艺中，当空气进入​​腔室时，由于任何意想不到的事故（例如管道断裂），可以快速检测泄漏。

公开(公告)号：US20090136620A1

公开(公告)日：2009-05-28

申请号：US12067162

申请日：2006-09-15

申请人： Hiroshi Horiuchi ,  Hideo Ohtomo ,  Hiroshi Echizen

发明人： Hiroshi Horiuchi ,  Hideo Ohtomo ,  Hiroshi Echizen

IPC分类号： A23C9/13 ,  A23C9/123 ,  A23C3/02

CPC分类号： A23C9/1307 ,  A23C3/02 ,  A23V2002/00 ,  A23V2200/16 ,  A23V2250/54252 ,  A23V2250/54242 ,  A23V2250/5034

摘要： In order to provide fermented milk with excellent hardness and flavor and a method for producing the same, the method for producing fermented milk uses yogurt mix in which 0.3% by weight or more α-lactalbumin is added to starting milk mixture, yogurt mix containing whey protein concentrate in which α-lactalbumin is contained in the amount of 60% by weight based on the protein, yogurt mix in which 0.4% by weight or more β-lactoglobulin is added to starting milk mixture, or yogurt mix containing whey protein concentrate in which β-lactoglobulin is contained in the amount of 65% by weight or more based on the protein.

摘要翻译： 为了提供具有优异的硬度和风味的发酵乳及其制造方法，发酵乳的制造方法使用酸奶混合物，其中将0.3重量％以上的α-乳白蛋白添加到起始乳混合物中，含有乳清的酸奶混合物 蛋白质浓缩物，其中基于蛋白质含量为60重量％的α-乳白蛋白，其中向起始乳混合物中加入0.4重量％以上β-乳球蛋白的酸奶混合物，或含有乳清蛋白浓缩物的酸奶混合物 基于蛋白质，β-乳球蛋白的含量为65重量％以上。