公开(公告)号：US20080011228A1

公开(公告)日：2008-01-17

申请号：US11898440

申请日：2007-09-12

申请人： Hiroaki Inoue ,  Norio Kimura ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

发明人： Hiroaki Inoue ,  Norio Kimura ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

IPC分类号： B05C3/00

CPC分类号： H01L21/76843 ,  C23C18/1608 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/48 ,  C23C18/50 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device has an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses formed in a surface of a semiconductor substrate, and also has a protective film formed on surfaces of exposed interconnects that define the interconnect structure, to protect the interconnects. The protective film has a flattened surface.

摘要翻译： 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。 半导体器件具有嵌入式互连结构，其中诸如铜或银的电导体嵌入形成在半导体衬底的表面中的细小凹槽中，并且还具有形成在暴露的互连件的表面上的保护膜，所述互连限定了互连 结构，保护互连。 保护膜具有平坦的表面。

公开(公告)号：US07060618B2

公开(公告)日：2006-06-13

申请号：US10216902

申请日：2002-08-13

申请人： Hiroaki Inoue ,  Norio Kimura ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

发明人： Hiroaki Inoue ,  Norio Kimura ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/302

CPC分类号： H01L21/76843 ,  C23C18/1608 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/48 ,  C23C18/50 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device has an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses formed in a surface of a semiconductor substrate, and also has a protective film formed on surfaces of exposed interconnects that define the interconnect structure, to protect the interconnects. The protective film has a flattened surface.

摘要翻译： 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。 半导体器件具有嵌入式互连结构，其中诸如铜或银的电导体嵌入形成在半导体衬底的表面中的细小凹槽中，并且还具有形成在暴露的互连件的表面上的保护膜，所述互连限定了互连 结构，保护互连。 保护膜具有平坦的表面。

公开(公告)号：US20060040487A1

公开(公告)日：2006-02-23

申请号：US11254790

申请日：2005-10-21

申请人： Hiroaki Inoue ,  Norio Kimura ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

发明人： Hiroaki Inoue ,  Norio Kimura ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C18/1608 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/48 ,  C23C18/50 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device has an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses formed in a surface of a semiconductor substrate, and also has a protective film formed on surfaces of exposed interconnects that define the interconnect structure, to protect the interconnects. The protective film has a flattened surface.

公开(公告)号：US07279408B2

公开(公告)日：2007-10-09

申请号：US11254790

申请日：2005-10-21

申请人： Hiroaki Inoue ,  Norio Kimura ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

发明人： Hiroaki Inoue ,  Norio Kimura ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C18/1608 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/48 ,  C23C18/50 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device has an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses formed in a surface of a semiconductor substrate, and also has a protective film formed on surfaces of exposed interconnects that define the interconnect structure, to protect the interconnects. The protective film has a flattened surface.

摘要翻译： 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。 半导体器件具有嵌入式互连结构，其中诸如铜或银的电导体嵌入形成在半导体衬底的表面中的细小凹槽中，并且还具有形成在暴露的互连件的表面上的保护膜，所述互连限定了互连 结构，保护互连。 保护膜具有平坦的表面。

公开(公告)号：US07344986B2

公开(公告)日：2008-03-18

申请号：US10482104

申请日：2002-11-06

申请人： Hiroaki Inoue ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

发明人： Hiroaki Inoue ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

IPC分类号： H01L21/4763

CPC分类号： H01L21/76849 ,  C23C18/48 ,  C25D3/58 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/7684 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a plating solution useful for forming embedded interconnects by embedding a conductive material in fine recesses for interconnects provided in the surface of a substrate, such as a semiconductor substrate, or for forming a protective layer for protecting the surface of embedded interconnects, a semiconductor device manufactured by using the plating solution and a method for manufacturing the semiconductor device. The plating solution contains copper ions, metal ions of a metal, and the metal is capable of forming with copper a copper alloy in which the metal does not form a solid solution with copper, a complexing agent, and a reducing agent free from alkali metal.

摘要翻译： 本发明涉及一种用于通过将导电材料嵌入到设置在诸如半导体衬底的衬底的表面中的互连的精细凹槽中的用于形成嵌入式互连的电镀液，或用于形成用于保护嵌入式互连的表面的保护层 ，使用电镀液制造的半导体装置及其制造方法。 电镀溶液含有铜离子，金属的金属离子，金属能够与铜形成铜合金，其中金属不与铜形成固溶体，络合剂和不含碱金属的还原剂 。

公开(公告)号：US20060027452A1

公开(公告)日：2006-02-09

申请号：US11235335

申请日：2005-09-27

申请人： Koji Mishima ,  Junji Kunisawa ,  Natsuki Makino ,  Norio Kimura ,  Hiroaki Inoue ,  Kenji Nakamura ,  Moriji Matsumoto ,  Takahiro Nanjo ,  Mitsuko Odagaki

发明人： Koji Mishima ,  Junji Kunisawa ,  Natsuki Makino ,  Norio Kimura ,  Hiroaki Inoue ,  Kenji Nakamura ,  Moriji Matsumoto ,  Takahiro Nanjo ,  Mitsuko Odagaki

IPC分类号： C25D5/02 ,  C25D17/00

CPC分类号： H01L21/67109 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/67778 ,  H01L21/681

摘要： A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to allow a substrate to be loaded and unloaded, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.

摘要翻译： 基板处理装置以限定在半导体基板中的精细互连图案或沟槽中填充诸如铜等的金属。 基板处理装置具有用于放置基板盒以装载和卸载基板的装载/卸载单元，用于处理基板的基板处理单元，以及用于在装载/卸载单元和卸载单元之间传送基板的传送机器人 底物处理单元。 装载/卸载单元，基板处理单元和传送机器人安装在单个设施中。 装载/卸载单元具有可水平旋转的旋转台​​，用于将基板盒定位在检测装载/卸载单元中的基板盒的位置，并用传送机器人从基板盒移除基板。

公开(公告)号：US06689257B2

公开(公告)日：2004-02-10

申请号：US09864210

申请日：2001-05-25

申请人： Koji Mishima ,  Junji Kunisawa ,  Natsuki Makino ,  Norio Kimura ,  Hiroaki Inoue ,  Kenji Nakamura ,  Moriji Matsumoto ,  Takahiro Nanjo ,  Mitsuko Odagaki

发明人： Koji Mishima ,  Junji Kunisawa ,  Natsuki Makino ,  Norio Kimura ,  Hiroaki Inoue ,  Kenji Nakamura ,  Moriji Matsumoto ,  Takahiro Nanjo ,  Mitsuko Odagaki

IPC分类号： C25D1700

CPC分类号： H01L21/67109 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/67778 ,  H01L21/681

摘要： A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to allow a substrate to be loaded and unloaded, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.

公开(公告)号：US07208074B2

公开(公告)日：2007-04-24

申请号：US10742390

申请日：2003-12-22

申请人： Koji Mishima ,  Junji Kunisawa ,  Natsuki Makino ,  Norio Kimura ,  Hiroaki Inoue ,  Kenji Nakamura ,  Moriji Matsumoto ,  Takahiro Nanjo ,  Mitsuko Odagaki

发明人： Koji Mishima ,  Junji Kunisawa ,  Natsuki Makino ,  Norio Kimura ,  Hiroaki Inoue ,  Kenji Nakamura ,  Moriji Matsumoto ,  Takahiro Nanjo ,  Mitsuko Odagaki

IPC分类号： C25C28/00 ,  C25D5/10

CPC分类号： H01L21/67109 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/67778 ,  H01L21/681

摘要： A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to allow a substrate to be loaded and unloaded, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.

摘要翻译： 基板处理装置以限定在半导体基板中的精细互连图案或沟槽中填充诸如铜等的金属。 基板处理装置具有用于放置基板盒以装载和卸载基板的装载/卸载单元，用于处理基板的基板处理单元，以及用于在装载/卸载单元和卸载单元之间传送基板的传送机器人 底物处理单元。 装载/卸载单元，基板处理单元和传送机器人安装在单个设施中。 装载/卸载单元具有可水平旋转的旋转台​​，用于将基板盒定位在检测装载/卸载单元中的基板盒的位置，并用传送机器人从基板盒移除基板。

公开(公告)号：US06821902B2

公开(公告)日：2004-11-23

申请号：US10774488

申请日：2004-02-10

申请人： Hiroaki Inoue ,  Kenji Nakamura ,  Moriji Matsumoto

发明人： Hiroaki Inoue ,  Kenji Nakamura ,  Moriji Matsumoto

IPC分类号： H01L21302

CPC分类号： H01L21/288 ,  C23C18/1607 ,  C23C18/1635 ,  C23C18/34 ,  C23C18/50 ,  H01L21/02063 ,  H01L21/0209 ,  H01L21/6723 ,  H01L21/76843 ,  H01L21/76849 ,  Y10S428/901 ,  Y10T428/24917

摘要： The present invention relates to an electroless-plating liquid useful for forming a protective film for selectively protecting surface of exposed interconnects of a semiconductor device which has an embedded interconnect structure formed by an electric conductor, such as copper or silver, embedded in fine recesses for interconnects formed in a surface of a semiconductor substrate, and also to a semiconductor device in which surfaces of exposed interconnects are selectively protected with a protective film. The electroless-plating liquid contains cobalt ions, a complexing agent and a reducing agent containing no alkali metal.

摘要翻译： 本发明涉及一种用于形成用于选择性地保护半导体器件的暴露的互连表面的化学镀液，所述半导体器件具有嵌入的互连结构，所述嵌入式互连结构由诸如铜或银的电导体嵌入微细凹槽中 形成在半导体衬底的表面中的互连以及暴露的互连表面被保护膜选择性地保护的半导体器件。 化学镀液含有钴离子，络合剂和不含碱金属的还原剂。

公开(公告)号：US06858084B2

公开(公告)日：2005-02-22

申请号：US09983401

申请日：2001-10-24

申请人： Hiroaki Inoue ,  Koji Mishima ,  Tsutomu Karimata ,  Kenji Nakamura ,  Moriji Matsumoto ,  Junji Kunisawa

发明人： Hiroaki Inoue ,  Koji Mishima ,  Tsutomu Karimata ,  Kenji Nakamura ,  Moriji Matsumoto ,  Junji Kunisawa

IPC分类号： C23C18/16 ,  H01L21/288 ,  H01L21/768 ,  B05C11/00

CPC分类号： H01L21/76843 ,  C23C18/1619 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H01L2221/1089

摘要： The present invention relates to an electroless plating apparatus which can reduce an amount of a plating liquid to be used, maintain a stable plating process, be downsized, reduce an apparatus cost, form a film having a uniform thickness over an entire surface, and prevent a plating liquid from being deteriorated due to a temperature rise. The present invention comprises: a holding device for holding a substrate with a surface, to be plated, facing upwardly; a plating liquid holding mechanism for sealing a periphery of the surface, to be plated, of the substrate held by the holding device; an electroless plating treatment liquid supply device for supplying an electroless plating liquid to the surface, to be plated, of the substrate sealed by the plating liquid holding mechanism to allow supplied electroless plating liquid to be held on the substrate; and a heating apparatus provided below the substrate.

摘要翻译： 本发明涉及一种能够减少使用的电镀液量，保持电镀工序稳定，小型化，降低设备成本，在整个表面形成均匀厚度的膜的化学镀设备，并且防止 电镀液由于升温而劣化。 本发明包括：保持装置，用于保持具有面向上的待镀表面的基板; 电镀液保持机构，用于密封由保持装置保持的基板的待镀表面的周边; 一种化学镀处理液体供应装置，用于向由电镀液保持机构密封的基板的待镀表面供给化学镀液体，以使供给的化学镀液保持在基板上; 以及设置在基板的下方的加热装置。