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    Chromane substituted benzimidazole derivatives
    1.
    发明授权
    Chromane substituted benzimidazole derivatives 有权
    苯并二氢苯并咪唑衍生物

    公开(公告)号：US07723321B2

    公开(公告)日：2010-05-25

    申请号：US11612583

    申请日：2006-12-19

    申请人： Takeshi Hanazawa ,  Hiroki Koike

    发明人： Takeshi Hanazawa ,  Hiroki Koike

    IPC分类号： A61K31/4184 ,  C07D405/02 ,  C07D407/02

    CPC分类号： C07D405/12 ,  C07D409/12

    摘要： This invention relates to compounds of the formula (I): or a pharmaceutically acceptable salt thereof, wherein: A, B, X, R1, R2, R3, R4, R5, R6, R7 and R8 are each as described herein or a pharmaceutically acceptable salt, and compositions containing such compounds and the use of such compounds in the treatment of a condition mediated by acid pump antagonistic activity such as, but not limited to, as gastrointestinal disease, gastroesophageal disease, gastroesophageal reflux disease (GERD), peptic ulcer, gastric ulcer, duodenal ulcer, NSAID-induced ulcers, gastritis, infection of Helicobacter pylori, dyspepsia, functional dyspepsia, Zollinger-Ellison syndrome, non-erosive reflux disease (NERD), visceral pain, heartburn, nausea, esophagitis, dysphagia, hypersalivation, airway disorders or asthma.

    摘要翻译： 本发明涉及式（I）化合物或其药学上可接受的盐，其中：A，B，X，R 1，R 2，R 3，R 4，R 5，R 6，R 7和R 8各自如本文所述， 可接受的盐和含有这些化合物的组合物，以及这些化合物在治疗由酸泵拮抗活性（例如但不限于胃肠疾病，胃食管疾病，胃食管反流病（GERD）），消化性溃疡 ，胃溃疡，十二指肠溃疡，NSAID诱发的溃疡，胃炎，幽门螺杆菌感染，消化不良，功能性消化不良，佐林格 - 埃利森综合征，非侵蚀性反流病（NERD），内脏痛，胃灼热，恶心，食管炎，吞咽困难，过度激素 ，气道障碍或哮喘。

    Chromane substituted benzimidazole derivatives as acid pump antagonists
    2.
    发明授权
    Chromane substituted benzimidazole derivatives as acid pump antagonists 有权
    色烷取代的苯并咪唑衍生物作为酸泵拮抗剂

    公开(公告)号：US07718809B2

    公开(公告)日：2010-05-18

    申请号：US11916671

    申请日：2006-06-02

    申请人： Hiroki Koike ,  Sachiko Sakakibara

    发明人： Hiroki Koike ,  Sachiko Sakakibara

    IPC分类号： A61K31/4184 ,  C07D405/12

    CPC分类号： C07D405/12 ,  C07D405/14

    摘要： This invention relates to compounds of the formula (I): or a pharmaceutically acceptable salt thereof, wherein: A, B, X, R1, R2, R3, R4, R5 and R6, R7, R8 and R9 are each as described herein or a pharmaceutically acceptable salt, and compositions containing such compounds and the use of such compounds in the treatment of a condition mediated by acid pump antagonistic activity such as, but not limited to, as gastrointestinal disease, gastroesophageal disease, gastroesophageal reflux disease (GERD), peptic ulcer, gastric ulcer, duodenal ulcer, NSAID-induced ulcers, gastritis, infection of Helicobacter pylori, dyspepsia, functional dyspepsia, Zollinger-Ellison syndrome, non-erosive reflux disease (NERD), visceral pain, heartburn, nausea, esophagitis, dysphagia, hypersalivation, airway disorders or asthma.

    摘要翻译： 本发明涉及式（I）化合物或其药学上可接受的盐，其中：A，B，X，R 1，R 2，R 3，R 4，R 5和R 6，R 7，R 8和R 9各自如本文所述或 药学上可接受的盐，以及含有这些化合物的组合物，以及这些化合物在治疗由酸泵拮抗活性介导的病症中的用途，例如但不限于胃肠道疾病，胃食管疾病，胃食管反流病（GERD）， 消化性溃疡，胃溃疡，十二指肠溃疡，NSAID诱导的溃疡，胃炎，幽门螺杆菌感染，消化不良，功能性消化不良，佐林格 - 埃里森综合征，非侵蚀性反流疾病（NERD），内脏痛，胃灼热，恶心，食管炎，吞咽困难 ，过度激活，气道障碍或哮喘。

    N-benzenesulfonyl L-proline compounds as bradykinin antagonists
    5.
    发明授权
    N-benzenesulfonyl L-proline compounds as bradykinin antagonists 失效
    N-苯磺酰基L-脯氨酸化合物作为缓激肽拮抗剂

    公开(公告)号：US06734306B2

    公开(公告)日：2004-05-11

    申请号：US10010863

    申请日：2001-12-05

    申请人： Yasuhiro Katsu ,  Makoto Kawai ,  Hiroki Koike ,  Seiji Nukui

    发明人： Yasuhiro Katsu ,  Makoto Kawai ,  Hiroki Koike ,  Seiji Nukui

    IPC分类号： C07D40114

    CPC分类号： C07D451/02 ,  C07D401/12 ,  C07D401/14 ,  C07D451/04 ,  C07D453/02 ,  C07D487/08

    摘要： This invention provides a compound of the formula (I): or the pharmaceutically acceptable salts thereof wherein X1 and X2 are halo; R1 and R2 are independently hydrogen or C1-4 alkyl; R3 and R4 are each hydrogen or halo; and R5 is (a) —C3-9 diazacycloalkyl optionally substituted with C5-11 azabicycloalkyl; (b) —C3-9 azacycloalkyl-NH—(C5-11 azabicycloalkyl optionally substituted with C1-4 alkyl); (c) —NH—C1-3 alkyl-C(O)—C5-11 diazabicycloalkyl; (d) —NH—C1-3 alkyl-C(O)—NH—C5-11 azabicycloalkyl, the C5-11 azabicycloalkyl being optionally substituted with C1-4 alkyl; (e) —C3-9 azacycloalkyl optionally substituted with C3-9 azacycloalkyl; or (f) —NH—C1-5 alkyl-NH—C(O)—C4-9 cycloalkyl-NH2. These compounds are useful for the treatment of medical conditions mediated by bradykinin such as inflammation, allergic rhinitis, pain, etc. This invention also provides a pharmaceutical composition comprising the above compound.

    摘要翻译： 本发明提供式（I）化合物或其药学上可接受的盐，其中X 1和X 2为卤素; R 1和R 2独立地是氢或C 1-4烷基; R 3和R 4各自为氢或卤素; （b）-C3-9氮杂环烷基-NH-（任选被C 1-4烷基取代的C 5-10氮杂双环烷基）;（c）-C（= NH-C 1-3烷基-C（O）-C 5-11二氮杂双环烷基;（d）-NH-C 1-3烷基-C（O）-NH-C 5-11氮杂双环烷基，C 5-11氮杂双环烷基任选被C 1 -4-烷基;（e）任选被C 3-9氮杂环烷基取代的-C3-9氮杂环烷基; 或（f）-NH-C 1-5烷基-NH-C（O）-C 4-9环烷基-NH 2。这些化合物可用于治疗由缓激肽介导的医学病症如炎症，过敏性鼻炎，疼痛等。 本发明还提供了包含上述化合物的药物组合物。

    2,3-substituted indole compounds as anti-inflammatory and analgesic agents
    6.
    发明授权
    2,3-substituted indole compounds as anti-inflammatory and analgesic agents 失效
    2,3-取代的吲哚化合物作为抗炎和止痛剂

    公开(公告)号：US06608070B1

    公开(公告)日：2003-08-19

    申请号：US09355494

    申请日：1999-07-28

    申请人： Kazunari Nakao ,  Rodney William Stevens ,  Kiyoshi Kawamura ,  Chikara Uchida ,  Hiroki Koike ,  Stephane Caron

    发明人： Kazunari Nakao ,  Rodney William Stevens ,  Kiyoshi Kawamura ,  Chikara Uchida ,  Hiroki Koike ,  Stephane Caron

    IPC分类号： A01N4390

    CPC分类号： C07D401/06 ,  C07D209/18 ,  C07D401/10 ,  C07D403/06 ,  C07D405/06 ,  C07D405/10 ,  C07D409/06 ,  C07D409/10 ,  C07D413/06 ,  C07D417/06 ,  C07D417/10

    摘要： This invention provides a compound of the following formula: or the pharmaceutically acceptable salts thereof wherein Z is OH, C1-6 alkoxy, —NR2R3 or heterocycle; Q is selected from the following: (a) an optionally substituted phenyl, (b) an optionally substituted 6-membered monocyclic aromatic group containing one, two, three or four nitrogen atom(s), (c) an optionally substituted 5-membered monocyclic aromatic group containing one heteroatom selected from O, S and N and optionally containing one, two or three nitrogen atom(s) in addition to said heteroatom, (d) an optionally substituted C3-7 cycloalkyl and (e) an optionally substituted benzo-fuzed heterocycle; R1 is hydrogen, C1-4 alkyl or halo; R2 and R3 are independently hydrogen, OH, C1-4 alkoxy, C1-4 alkyl or C1-4 alkyl substituted with halo, OH, C1-4 alkoxy or CN; X is independently selected from H, halo, C1-4 alkyl, halo-substituted C1-4 alkyl, OH, C1-4 alkoxy, halo-substituted C1-4 alkoxy, C1-4 alkylthio, NO2, NH2, di-(C1-4 alkyl)amino and CN; and n is 0, 1, 2, 3 and 4. This invention also provides a pharmaceutical composition useful for the treatment of a medical condition in which prostaglandins are implicated as pathogens.

    摘要翻译： 本发明提供下式的化合物或其药学上可接受的盐，其中Z是OH，C 1-6烷氧基，-NR 2 R 3或杂环; Q选自以下：（a）任选取代的苯基，（b）含有一个，两个，三个或四个氮原子的任选取代的6元单环芳族基团，（c）任选取代的5元 含有一个选自O，S和N的杂原子，并且除了所述杂原子之外任选含有一个，两个或三个氮原子的单环芳基，（d）任选取代的C 3-7环烷基和（e）任选取代的苯并 杂环杂环 R1是氢，C1-4烷基或卤素; R2和R3独立地是氢，OH，C1-4烷氧基，C1-4烷基或被卤素，OH，C1-4烷氧基或CN取代的C1-4烷基; X独立地选自H，卤素，C 1-4烷基，卤素取代的C 1-4烷基，OH，C 1-4烷氧基，卤素取代的C 1-4烷氧基，C 1-4烷硫基，NO 2，NH 2，二（C 1 -4烷基）氨基和CN; 并且n为0,1,2,3和4.本发明还提供了可用于治疗前列腺素作为病原体的医疗状况的药物组合物。

    Ferroelectric memory device
    7.
    发明授权
    Ferroelectric memory device 失效
    铁电存储器件

    公开(公告)号：US5926413A

    公开(公告)日：1999-07-20

    申请号：US115344

    申请日：1998-07-15

    申请人： Junichi Yamada ,  Hiroki Koike

    发明人： Junichi Yamada ,  Hiroki Koike

    IPC分类号： G11C14/00 ,  G11C11/22 ,  G11C16/06

    CPC分类号： G11C11/22

    摘要： It is an object of the invention to provide a method for generating a reference voltage by means of a sense amplifier in a ferroelectric memory device in a 1T1C type (One Transistor One Capacitor type). The directions of the polarizations of dummy cell DMC1 and DMC2 are set so that they are not inverted in case that data stored therein are read. Transistors T1 and T2 are added to the sense amplifier in order to make it be unbalanced, when a datum stored in a memory cell is read. In case that a datum stored in the memory cell is read, the transistor on the dummy cell side is on and that on the memory cell side is off. Widths of channels of T1 and T2 are selected so that an apparent reference voltage is slightly higher than a voltage read on a bit line in case that the polarization of the dummy cell is not inverted.

    摘要翻译： 本发明的一个目的是提供一种通过1T1C型（一晶体管一电容器型）的铁电存储器件中的读出放大器产生参考电压的方法。 设置虚拟单元DMC1和DMC2的极化方向，使得在读取存储在其中的数据的情况下它们不被反转。 当存储在存储单元中的数据被读取时，晶体管T1和T2被添加到读出放大器以便使其不平衡。 在存储单元中存储的数据被读取的情况下，虚设单元侧的晶体管导通，存储单元侧的晶体管截止。 选择T1和T2的通道的宽度，使得在虚拟单元的极化不反转的情况下，视在参考电压略高于在位线上读取的电压。

    Memory data protection for a ferroelectric memory
    8.
    发明授权
    Memory data protection for a ferroelectric memory 失效
    铁电存储器的存储器数据保护

    公开(公告)号：US5574679A

    公开(公告)日：1996-11-12

    申请号：US549417

    申请日：1995-10-27

    申请人： Tetsuya Ohtsuki ,  Hiroki Koike

    发明人： Tetsuya Ohtsuki ,  Hiroki Koike

    IPC分类号： G11C8/08 ,  G11C8/10 ,  G11C11/22 ,  G11C14/00

    CPC分类号： G11C8/10 ,  G11C11/22 ,  G11C8/08

    摘要： A nonvolatile ferroelectric memory device comprises a power supply and a memory cell array having a plurality of memory cells arranged in rows and columns and further comprises a plate-voltage level generator, a power supply voltage detector, and a protective control circuit. The plate-voltage level generator generates a plate voltage on a plate line connected to the one electrode of a ferroelectric capacitor of each memory cell. The power supply voltage detector detects a voltage of the power supply to generate a low-voltage detection signal when the power supply voltage is lower than a threshold voltage. The protective control circuit responsive to the low-voltage detection signal fixes the word lines at a grounding voltage level so as to protect the ferroelectric capacitor from a voltage change of the word line. The protective control circuit may fix the bit lines at the plate voltage level when the power supply voltage is lower than the threshold voltage.

    摘要翻译： 非易失性铁电存储器件包括电源和具有以行和列排列的多个存储单元的存储单元阵列，还包括板电压电平发生器，电源电压检测器和保护控制电路。 板电压电平发生器在与每个存储单元的铁电电容器的一个电极连接的板线上产生板电压。 当电源电压低于阈值电压时，电源电压检测器检测电源的电压以产生低电压检测信号。 响应于低电压检测信号的保护控制电路将字线固定在接地电压电平，以保护铁电电容器免受字线的电压变化。 当电源电压低于阈值电压时，保护控制电路可将位线固定在板电压电平。

    Semiconductor memory device with redundant decoder available for test sequence on redundant memory cells
    9.
    发明授权
    Semiconductor memory device with redundant decoder available for test sequence on redundant memory cells 失效
    具有冗余解码器的半导体存储器件可用于冗余存储器单元上的测试序列

    公开(公告)号：US5544106A

    公开(公告)日：1996-08-06

    申请号：US388485

    申请日：1995-02-14

    申请人： Hiroki Koike

    发明人： Hiroki Koike

    IPC分类号： G11C11/401 ,  G11C29/00 ,  G11C29/04 ,  G11C29/24 ,  H01L21/82 ,  H01L27/10 ,  G11C7/00

    CPC分类号： G11C29/80 ,  G11C29/24

    摘要： A semiconductor dynamic random access memory device is equipped with rows of redundant memory cells for replacing defective rows of regular memory cells therewith, and a redundant system associated with the rows of redundant memory cells is enabled in a test sequence for selectively energizing redundant word lines in response to external address signals so as to eliminate an address pointer only used in the test sequence.

    摘要翻译： 半导体动态随机存取存储器装置配备有冗余存储器单元的行，用于替换其中的常规存储单元的有缺陷的行，并且在测试序列中使能与冗余存储单元行相关联的冗余系统，以选择性地激励冗余字线 响应外部地址信号，以消除仅在测试序列中使用的地址指针。