OPENING AND CLOSING APPARATUS WITH LOCK
    1.
    发明申请
    OPENING AND CLOSING APPARATUS WITH LOCK 有权
    打开和关闭装置与锁

    公开(公告)号:US20150054294A1

    公开(公告)日:2015-02-26

    申请号:US14343385

    申请日:2012-08-29

    IPC分类号: E05B65/08 E05F15/00 E05B47/00

    摘要: An opening and closing apparatus with a lock that is provided is capable of safely and promptly closing a sliding door, and also easily performing unlocking with a simple configuration. In an opening and closing apparatus with a lock for opening and closing sliding doors that are provided with elastic members at their door leading ends, output of an electric motor is transmitted to a rack-and-pinion mechanism or a lock mechanism. A control unit controls the electric motor such that a closing operation is performed, the closing operation operates the rack-and-pinion mechanism so as to move the sliding doors to a fully closed position and then displacing a link mechanism in a lock mechanism from an unlocking position to a locking position. Furthermore, the control unit controls the electric motor so as to reduce the output of the electric motor at a predetermined intermediate time point during the closing operation.

    摘要翻译: 具有锁定的开闭装置能够安全且及时地关闭滑动门,并且也可以以简单的结构容易地执行解锁。 在具有用于打开和关闭在其门前端设置有弹性构件的滑动门的锁的开闭装置中,电动机的输出被传递到齿条 - 小齿轮机构或锁定机构。 控制单元控制电动机,使得执行关闭操作,关闭操作操作齿条 - 小齿轮机构,以将滑动门移动到完全关闭位置,然后将锁定机构中的连杆机构从 解锁位置到锁定位置。 此外,控制单元控制电动机,以便在关闭操作期间将电动机的输出减小到预定的中间时间点。

    Epitaxial growth apparatus and epitaxial growth method
    3.
    发明授权
    Epitaxial growth apparatus and epitaxial growth method 有权
    外延生长装置和外延生长法

    公开(公告)号:US09273414B2

    公开(公告)日:2016-03-01

    申请号:US12945299

    申请日:2010-11-12

    IPC分类号: C30B25/02 C30B29/06 C30B25/12

    CPC分类号: C30B29/06 C30B25/02 C30B25/12

    摘要: An object of the present invention is to provide an epitaxial growth apparatus and an epitaxial growth method that can suppress variation in in-face temperature of a semiconductor wafer caused by deflection of a susceptor and manufacture an epitaxial wafers of high quality. Specifically, the present invention provides an epitaxial growth apparatus for forming an epitaxial film on a semiconductor wafer placed in a chamber having a supply port and an exhaust port for a treatment gas, the apparatus comprising: a susceptor for placing the semiconductor wafer thereon within the chamber; and a susceptor support shaft for supporting the susceptor at an underneath portion of the susceptor, wherein the susceptor support shaft has a support column located substantially coaxial with the center of the susceptor, and at least four support arms extending radially from the top end of the support column with equal intervals therebetween.

    摘要翻译: 本发明的目的是提供一种能够抑制由于感受器的偏转引起的半导体晶片的面内温度变化的外延生长装置和外延生长方法,并且制造高质量的外延晶片。 具体地说,本发明提供了一种用于在放置在具有用于处理气体的供给口和排气口的室中的半导体晶片上形成外延膜的外延生长装置,该设备包括:用于将半导体晶片放置在其内的基座 房间 以及用于将基座支撑在基座的下部的基座支撑轴,其中,所述基座支撑轴具有与所述基座的中心基本同轴的支撑柱,以及从所述基座的顶端径向延伸的至少四个支撑臂 支撑柱之间具有相等的间隔。

    Illumination device and display device
    4.
    发明授权
    Illumination device and display device 有权
    照明装置和显示装置

    公开(公告)号:US09140848B2

    公开(公告)日:2015-09-22

    申请号:US14110764

    申请日:2012-04-12

    申请人: Takeshi Masuda

    发明人: Takeshi Masuda

    摘要: A backlight device (illumination device) 80 includes a plurality of LEDs 22 and entrance ends 30a that light from the LEDs 22 enters, and further includes a plurality of light guide bars 30 that guide the light from the LEDs 22 and a bar-shaped attachment member 55 to which the LEDs 22 and the light guide bars 30 are attached.

    摘要翻译: 背光装置(照明装置)80包括多个LED22和来自LED22的光的入射端30a,并且还包括引导来自LED22的光的多个导光杆30和条形附件 LED 22和导光杆30所附接的构件55。

    Light guide elements for display device
    5.
    发明授权
    Light guide elements for display device 有权
    显示装置导光元件

    公开(公告)号:US08684588B2

    公开(公告)日:2014-04-01

    申请号:US12990957

    申请日:2009-02-20

    IPC分类号: F21V7/04

    摘要: A light guide element includes a light-emitting section including a light-emitting surface, a light guide section, and a diffusing device provided in at least part of a region extending from a boundary surface between the light-emitting section and the light guide section, to point halfway between the boundary surface and an end of the light guide section closer to the light source. The light guide element might be used to form a backlight for a liquid crystal display device.

    摘要翻译: 导光元件包括发光部分,发光表面,导光部分和漫射装置,该发光部分设置在从发光部分和导光部分之间的边界面延伸的区域的至少一部分中 指向边界表面和更靠近光源的导光部分的端部之间的中途。 导光元件可以用于形成用于液晶显示装置的背光源。

    Apparatus for the preparation of film
    6.
    发明授权
    Apparatus for the preparation of film 有权
    薄膜制备装置

    公开(公告)号:US08591655B2

    公开(公告)日:2013-11-26

    申请号:US10612149

    申请日:2003-07-03

    摘要: A thin film-forming apparatus, for ensuring uniform plane distribution of properties of a film formed on a substrate surface, has a gas-supply port 24a supplying a gas mixture from a gas-mixing chamber 24 to a shower head 25. The port is arranged at the peripheral portion on the bottom face of the gas-mixing chamber so that the gas mixture flows from the upper peripheral region of the head towards the center thereof. An exhaust port 32 discharging the exhaust gas generated in the film-forming chamber 3 is arranged at a position lower than the level of a stage 31 during film-formation directing the exhaust gas towards the side wall of the chamber 3 and discharging the exhaust gas through the exhaust port. The stage 31 is designed to move freely up and down to adjust the distance between the shower head 25 and substrate S.

    摘要翻译: 用于确保形成在基板表面上的膜的性质的均匀平面分布的薄膜形成装置具有将气体混合物从气体混合室24供应到喷淋头25的气体供应口24a。该端口是 布置在气体混合室的底面的周边部分,使得气体混合物从头部的上周边区域朝向其中心流动。 将成膜室3内产生的废气排出的排气口32配置在低于气缸台31的高度的位置,在成膜期间将排气朝着室3的侧壁排出,排出废气 通过排气口。 舞台31被设计成上下移动以调节淋浴头25和基底S之间的距离。

    THIN-FILM FORMING METHOD AND THIN-FILM FORMING APPARATUS
    7.
    发明申请
    THIN-FILM FORMING METHOD AND THIN-FILM FORMING APPARATUS 有权
    薄膜成型方法和薄膜成型装置

    公开(公告)号:US20130224381A1

    公开(公告)日:2013-08-29

    申请号:US13876756

    申请日:2011-09-15

    IPC分类号: C23C16/44

    摘要: In order to provide a thin film manufacturing method and a thin film manufacturing apparatus, wherein a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved, a dummy substrate (S2) is conveyed into a chamber (51), dummy processing gas is supplied to the dummy substrate (S2), a product substrate (S3) is conveyed into the chamber (51), and raw material gas different from the dummy processing gas, and containing therein metal material for manufacturing a thin film with the Metal Organic Chemical Vapor Deposition (MOCVD) method, is supplied to the product substrate (S3). Since the raw material gas is not used as dummy processing gas, the amount of metal material to be used can be inhibited, and a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved.

    摘要翻译: 为了提供薄膜制造方法和薄膜制造装置,其中可以以低成本制造具有良好重复性的薄膜,并且以节省资源的方式,将虚设基板(S2)输送到室 (51)中,将假处理气体供给到虚拟基板(S2),将产品基板(S3)输送到室(51)中,将原料气体与虚拟处理气体不同,并且内装有用于制造的金属材料 将具有金属有机化学气相沉积(MOCVD)方法的薄膜供应到产品基板(S3)。 由于不使用原料气体作为虚拟处理气体,所以能够抑制金属材料的使用量,能够以低成本制造具有良好重复性的薄膜,并且以节省资源的方式。

    Illumination device, display device, and light guide plate
    8.
    发明授权
    Illumination device, display device, and light guide plate 有权
    照明装置,显示装置和导光板

    公开(公告)号:US08520164B2

    公开(公告)日:2013-08-27

    申请号:US12599566

    申请日:2008-07-25

    IPC分类号: G02F1/1335

    摘要: An illumination device (30) includes a plurality of light source units (BLU) each having a light guide plate (1) and a plurality of light sources (21). The light guide plate (1) has an illumination region (4) through which incident beams of light from the light sources (21) are emitted outward and a light guide region (3) through which the incident beams of light from the light sources (21) are guided toward the illumination region (4), with the light guide region (3) and the illumination region (4) laid side-by-side. The illumination region (4) is divided into a plurality of light-emitting sections by slit sections (8), provided in such a way as to extend along directions of optical axes of the light sources (21), which restrict transmission of light. At least one of the light sources (21) is provided to each of the light-emitting sections in such a way as to be placed side-by-side along the light guide region (3). Light source units (20) adjacent to each other along the directions of the optical axes of the light sources (21) are disposed so that the illumination region (4) of one of the light source units (BLU) covers at least a part of the light guide region (3) of the other light source unit (BLU). This makes it possible to retain the strength of the illumination device as a combination of light guide blocks while reducing leakage of light into an adjacent area.

    摘要翻译: 照明装置(30)包括多个各自具有导光板(1)和多个光源(21)的光源单元(BLU)。 导光板(1)具有照明区域(4),来自光源(21)的入射光束向外射出的照明区域(4)和来自光源的入射光束(3)的导光区域 21)被引导到照明区域(4),导光区域(3)和照明区域(4)并排放置。 照明区域(4)通过狭缝部分(8)被分成多个发光部分,其设置成沿着光源(21)的光轴的方向延伸,这限制了光的透射。 至少一个光源(21)以沿着导光区域(3)并排放置的方式设置到每个发光部分。 沿着光源(21)的光轴的方向彼此相邻的光源单元(20)被布置成使得光源单元(BLU)中的一个的照明区域(4)覆盖至少一部分 另一光源单元(BLU)的导光区域(3)。 这使得可以将照明装置的强度作为导光块的组合保持,同时减少光泄漏到相邻区域中。

    Process for producing magnet
    9.
    发明授权
    Process for producing magnet 有权
    磁铁制造工艺

    公开(公告)号:US08394450B2

    公开(公告)日:2013-03-12

    申请号:US12473429

    申请日:2009-05-28

    IPC分类号: B05D7/14

    CPC分类号: H01F41/026 H01F41/0293

    摘要: The process for producing a magnet according to the invention is characterized by comprising a first step in which a heavy rare earth compound containing Dy or Tb as a heavy rare earth element is adhered onto a sintered compact of a rare earth magnet and a second step in which the heavy rare earth compound-adhered sintered compact is subjected to heat treatment, wherein the heavy rare earth compound is a Dy or Tb iron compound.

    摘要翻译: 根据本发明的制造磁体的方法的特征在于包括第一步骤,其中将包含Dy或Tb的重稀土元素的重稀土化合物粘附到稀土磁体的烧结体上,第二步骤 对重稀土类化合物附着的烧结体进行热处理,其中重稀土类化合物为Dy或Tb铁化合物。

    EPITAXIAL GROWTH APPARATUS AND EPITAXIAL GROWTH METHOD
    10.
    发明申请
    EPITAXIAL GROWTH APPARATUS AND EPITAXIAL GROWTH METHOD 有权
    外来生长装置和外来生长方法

    公开(公告)号:US20120285382A1

    公开(公告)日:2012-11-15

    申请号:US13445037

    申请日:2012-04-12

    IPC分类号: C23C16/458

    摘要: A susceptor support shaft for an epitaxial growth apparatus capable of forming a high quality epitaxial film by suppressing in-plane resistance variation of the epitaxial film due to deflection of a susceptor, wherein the susceptor support shaft supports a susceptor at an underneath portion of the susceptor in an epitaxial growth apparatus. The susceptor support shaft includes a support column located substantially coaxial with a center of the susceptor; a plurality of arms extending radially from the support column to positions under a peripheral portion of the susceptor; an arm connecting member connecting tips of the arms next to each other; and support pins extending from the arm connecting member, thereby supporting the susceptor.

    摘要翻译: 一种用于外延生长装置的基座支撑轴,其能够通过抑制由于基座的挠曲而导致的外延膜的面内电阻变化而形成高质量的外延膜,其中,基座支撑轴支撑基座的下部的基座 在外延生长装置中。 基座支撑轴包括与基座的中心大致同轴的支撑柱; 从所述支撑柱径向延伸到所述基座的周边部分下方的多个臂; 臂连接构件,其彼此相邻地连接臂的尖端; 以及从臂连接构件延伸的支撑销,从而支撑基座。