公开(公告)号：US3946334A

公开(公告)日：1976-03-23

申请号：US523500

申请日：1974-11-13

申请人： Hiroo Yonezu ,  Tonao Yuasa

发明人： Hiroo Yonezu ,  Tonao Yuasa

IPC分类号： H01S5/02 ,  H01S5/024 ,  H01S3/19

CPC分类号： H01S5/0224 ,  H01S5/02476 ,  H01L2224/48463 ,  H01L2224/73265

摘要： An injection semiconductor laser having an active region normal to the reflecting surfaces includes an ohmic metal film on the side of the heat sink near the active region. The ohmic metal film is plated with a layer of a thermally conductive material. The shape and dimensions of the plated layer are selected to protect the laser from being damaged when the laser device is bonded to the heat sink, and also to prevent light rays emerging through one of the reflecting surfaces from impinging on the surface of the heat sink.

摘要翻译： 具有与反射面垂直的有源区域的注入半导体激光器包括在有源区附近的散热器侧的欧姆金属膜。 欧姆金属膜镀有一层导热材料。 选择镀层的形状和尺寸以保护激光器在激光装置接合到散热器时不被损坏，并且还防止通过一个反射表面出射的光线撞击散热片的表面 。

公开(公告)号：US4092614A

公开(公告)日：1978-05-30

申请号：US757684

申请日：1977-01-07

申请人： Isamu Sakuma ,  Hiroo Yonezu ,  Katsuhiko Nishida ,  Taibun Kamejima ,  Tonao Yuasa ,  Masayasu Ueno ,  Toshio Uji ,  Yasuo Nannichi ,  Izuo Hayashi

发明人： Isamu Sakuma ,  Hiroo Yonezu ,  Katsuhiko Nishida ,  Taibun Kamejima ,  Tonao Yuasa ,  Masayasu Ueno ,  Toshio Uji ,  Yasuo Nannichi ,  Izuo Hayashi

IPC分类号： H01S5/02 ,  H01S5/024 ,  H01S5/026 ,  H01S5/0683 ,  H01S5/40 ,  H01S3/19

CPC分类号： H01S5/02476 ,  H01S5/026 ,  H01S5/0683 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48147 ,  H01L2224/73265 ,  H01S5/021 ,  H01S5/02236 ,  H01S5/02272 ,  H01S5/4025 ,  H01S5/4031

摘要： A semiconductor laser device in which at least one of the main surfaces of a semiconductor laser crystal body which generates heat during operation is brought into thermal contact with a silicon crystal heat-sink body.

公开(公告)号：US4309668A

公开(公告)日：1982-01-05

申请号：US14012

申请日：1979-02-21

申请人： Masayasu Ueno ,  Hiroo Yonezu ,  Roy Lang

发明人： Masayasu Ueno ,  Hiroo Yonezu ,  Roy Lang

IPC分类号： H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S3/19

CPC分类号： H01S5/16 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/22

摘要： A stripe-shaped excitation region is provided in an active layer of a double heterojunction laser device, the excitation region and the other region of the active layer being endowed with an effective refractive index difference or optical absorption coefficient difference therebetween, and a carrier injection region is provided contiguously to the excitation region, whereby the laser device exhibits a low ohmic resistance, effects a stable lower-order transverse mode oscillation and suppresses relaxation oscillations. By preventing the stripe-shaped excitation region and the carrier injection region from being exposed to reflective surfaces, the aforecited beneficial results can be realized over a wide range of operating currents, and a laser device of extremely high power density emission is achieved due to the increase of the threshold of the catastrophic optical damage on mirrors.

摘要翻译： 在双异质结激光器件的有源层中提供条形激励区域，激活区域和有源层的另一区域赋予其之间的有效折射率差或光吸收系数差，并且载流子注入区域 与激发区域连续地提供，由此激光器件表现出低欧姆电阻，实现稳定的低阶横模振荡并抑制弛豫振荡。 通过防止条形激发区域和载流子注入区域暴露于反射表面，可以在宽的工作电流范围内实现上述有益的结果，并且由于 增加镜面上的灾难性光学损伤的阈值。

公开(公告)号：USRE29395E

公开(公告)日：1977-09-13

申请号：US696394

申请日：1976-06-15

申请人： Hiroo Yonezu

发明人： Hiroo Yonezu

IPC分类号： H01L33/00 ,  H01S5/20

CPC分类号： H01S5/20 ,  H01L33/00 ,  H01S5/2059

摘要： A semiconductor laser device includes a narrow elongated semiconductor region of the same conductivity type as another semiconductor region lying in the vicinity of the active region of the laser device. The elongated region extends in depth from the surface of the device to the vicinity of the active region. A surface semiconductor layer of an opposite conductivity type covers the entire surface of the device except for the elongated region.

公开(公告)号：US4003074A

公开(公告)日：1977-01-11

申请号：US519051

申请日：1974-10-29

申请人： Hiroo Yonezu ,  Izuo Hayashi

发明人： Hiroo Yonezu ,  Izuo Hayashi

IPC分类号： G02B6/42 ,  H01S5/022 ,  H01S5/024 ,  H01L23/02 ,  H01L23/12 ,  H01L33/00

CPC分类号： H01S5/02288 ,  G02B6/42 ,  G02B6/4206 ,  G02B6/421 ,  H01S5/024 ,  H01S5/02208

摘要： A hermetically sealed injection semiconductor laser device includes a hollow cylinder in which a crystal laser pellet is enclosed. The ends of the cylinder are sealed by metal electrodes one of which projects axially into the cylinder and is connected to an electrode surface of the crystal pellet. A lens element is disposed within the cylinder.

摘要翻译： 一种气密密封的注射半导体激光器件包括一个中空圆柱体，其中封闭了晶体激光粒子。 气缸的端部由金属电极密封，其中一个轴向突出到气缸中并连接到晶体颗粒的电极表面。 透镜元件设置在气缸内。

公开(公告)号：US4297652A

公开(公告)日：1981-10-27

申请号：US83043

申请日：1979-10-09

申请人： Izuo Hayashi ,  Hiroo Yonezu

发明人： Izuo Hayashi ,  Hiroo Yonezu

IPC分类号： H01S5/00 ,  H01S5/16 ,  H01S3/19

CPC分类号： H01S5/164

摘要： A semiconductor laser having a double heterostructure configuration is provided with a light waveguide layer extending between a pair of mirrors. A thin active layer is disposed adjacent to the waveguide layer, and is formed in the shape of a stripe having a width of approximately 5 .mu.m. The stripe is shorter in axial length than the waveguide, such that the ends of the stripe are spaced from the mirrors by a distance of 30 to 60 .mu.m.

摘要翻译： 具有双异质结构构造的半导体激光器设置有在一对反射镜之间延伸的光波导层。 薄的有源层被布置成与波导层相邻，并且形成为具有大约5μm的宽度的条纹的形状。 条纹的轴向长度比波导短，使得条的端部与反射镜间隔30至60μm。

公开(公告)号：US4210878A

公开(公告)日：1980-07-01

申请号：US940305

申请日：1978-09-06

申请人： Hiroo Yonezu

发明人： Hiroo Yonezu

IPC分类号： H01S5/02 ,  H01S5/024 ,  H01S3/19

CPC分类号： H01S5/02272 ,  H01L2224/4847 ,  H01L2924/01327 ,  H01S5/02276 ,  H01S5/024 ,  H01S5/0287

摘要： In a semiconductor laser element, a semiconductor laser crystal having a pair of reflection surfaces and a pair of opposing principal surfaces is fused to a heat sink having a planar surface wider than each of the principal surfaces by a layer formed of a fusible metal on the planar surface, whereby one of the ohmic contacts formed on predetermined areas of the principal surfaces is brought into contact with a predetermined portion of the fusible metal layer. A unitary film of an electrically insulating material, such as silicon monoxide, silicon dioxide, silicon nitride, and/or aluminium oxide, is sputtered or otherwise formed continuously on the reflection surfaces and on the exposed portion of the fusible metal layer left uncovered by the laser crystal fused to the heat sink. After the unitary film is formed on the other of the contacts, it is still possible to bond a metal lead directly to the other contact by employing an ultrasonic bonding technique. The fusible metal may be indium, tin, a solder, or a gold-tin, gold-silicon, or gold-germanium alloy, all of which are fusible at a temperature below about 370.degree. C. The laser crystal may be a double or single heterojunction or a homojunction crystal of lead sulfide or telluride or an intermetallic compound, such as GaAs-Al.sub.x Ga.sub.1-x As. The heat sink may be made of silicon, diamond of the IIa type, or copper.

摘要翻译： 在半导体激光元件中，具有一对反射面和一对相对的主面的半导体激光晶体被熔融到具有比各个主表面宽的平面的散热器，所述平坦表面由可熔金属形成的层 由此形成在主表面的预定区域上的欧姆接触中的一个与可熔金属层的预定部分接触。 诸如一氧化硅，二氧化硅，氮化硅和/或氧化铝之类的电绝缘材料的整体膜被溅射或以其他方式连续地形成在反射表面上和在由熔融金属层未被覆盖的可熔金属层的暴露部分上 激光晶体与散热片融合。 在另一个触点上形成一体膜之后，仍然可以通过使用超声波接合技术将金属引线直接连接到另一个触点。 可熔金属可以是铟，锡，焊料或金 - 锡，金 - 硅或金 - 锗合金，所有这些都在低于约370℃的温度下是可熔的。激光晶体可以是双重或 单一异质结或硫化铅或碲化物的同态结晶或金属间化合物，例如GaAs-Al x Ga 1-x As。 散热器可以由硅，IIa型金刚石或铜制成。

公开(公告)号：US3993964A

公开(公告)日：1976-11-23

申请号：US605550

申请日：1975-08-18

申请人： Hiroo Yonezu

发明人： Hiroo Yonezu

IPC分类号： H01L33/00 ,  H01S5/20 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01L33/00 ,  H01S5/2059

摘要： A semiconductor laser device includes a narrow elongated semiconductor region of the same conductivity type as another semiconductor region lying in the vicinity of the active region of the laser device. The elongated region extends in depth from the surface of the device to the vicinity of the active region. A surface semiconductor layer of an opposite conductivity type covers the entire surface of the device except for the elongated region.

摘要翻译： 半导体激光器件包括与位于激光器件的有源区附近的另一个半导体区域相同的导电类型的窄的细长半导体区域。 细长区域从器件的表面到有源区域的附近深入地延伸。 具有相反导电类型的表面半导体层覆盖除了细长区域之外的器件的整个表面。

公开(公告)号：US4282494A

公开(公告)日：1981-08-04

申请号：US15839

申请日：1979-02-27

申请人： Hiroo Yonezu ,  Masayasu Ueno

发明人： Hiroo Yonezu ,  Masayasu Ueno

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/10 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S3/19

CPC分类号： H01S5/10 ,  H01S5/16 ,  H01S5/20 ,  H01S5/0425 ,  H01S5/2059 ,  H01S5/22

摘要： In a double heterojunction semiconductor laser, extremely high optical power density emission is achieved by forming a stripe-geometry exciting region in an active layer so as not to be exposed on the opposite reflective surfaces, and selecting a band gap of the stripe-geometry exciting region narrower than that of surrounding non-exciting region of the active layer. A pair of window regions formed between the respective reflective surfaces and the tip ends of the stripe-geometry exciting region are sandwiched between a pair of heterojunction interfaces and thus acting low loss optical waveguides. In addition, by providing an optical obstacle region in the vicinity of the window region, higher order modes in horizontal transverse mode oscillations are suppressed, and thereby extremely high optical power output at the fundamental mode can be obtained without causing catastrophic optical damage on the reflective surfaces.

摘要翻译： 在双异质结半导体激光器中，通过在有源层中形成条纹几何激励区域，以便不在相对的反射面上露出来实现极高的光功率密度发射，并且选择带状几何激励的带隙 区域比活性层的周围非激发区域窄。 形成在各个反射表面之间的一对窗口区域和条形几何形状激发区域的末端被夹在一对异质结界面之间并由此作用于低损耗光波导。 此外，通过在窗口区域附近设置光学障碍物区域，可以抑制水平横模振荡中的高阶模式，从而可以获得在基模下的极高的光功率输出，而不会对反射层造成灾难性的光学损伤 表面。

公开(公告)号：US4281891A

公开(公告)日：1981-08-04

申请号：US23917

申请日：1979-03-26

申请人： Tsuneo Shinohara ,  Hiroo Yonezu

发明人： Tsuneo Shinohara ,  Hiroo Yonezu

IPC分类号： G02B6/42 ,  G02B5/14

CPC分类号： G02B6/4207 ,  G02B6/4212

摘要： A device for coupling a laser beam to an end surface of an optical fiber comprises a beam converging lens, a holder for the fiber, a block of a solid material, and a mass of a binder between the block and the end surface and between the block and the holder. The lens and the holder are fixed to each other so as to make the laser beam focus on the end surface. Use is preferred of an arrangement comprising a first and a second holder in which the holders have axial lines, respectively, and hold a laser element for the laser beam and the lens with a beam axis of the laser beam and an optical axis of the lens rendered coincident with the respective axial lines and in which the holders are fixed to each other with the axial lines aligned. The arrangement is effective also in coupling the laser beam to a general transmission medium. Instead of using the arrangement, a lens holder may be fixed to the fiber holder and then to a laser element holder so as to make the laser beam focus on the optical fiber end surface. A nonreflecting coating is desirable on the block at a portion exposed to the incident laser beam either when the laser beam is incident onto the block with a small angle of convergence or when the block is thin. The solid material, the binder, and the optical fiber usually have an approximately equal refractive index.

摘要翻译： 用于将激光束耦合到光纤的端表面的装置包括光束会聚透镜，用于光纤的保持器，固体材料块和块与端表面之间的粘合剂块 块和持有人。 透镜和保持器彼此固定，以使激光束聚焦在端面上。 使用优选的是包括第一和第二保持器的装置，其中保持器分别具有轴线，并且保持用于激光束的激光元件和具有激光束的束轴和透镜的光轴的透镜 与各轴线重合，并且其中保持器彼此固定，轴线对齐。 该布置在将激光束耦合到通用传输介质方面也是有效的。 代替使用该布置，可以将透镜保持器固定到光纤保持器，然后固定到激光元件保持器，以使激光束聚焦在光纤端表面上。 当暴露于入射激光束的部分，当激光束以小的收敛角入射到块上时，或者当块变薄时，在反射涂层上期望非反射涂层。 固体材料，粘合剂和光纤通常具有大致相等的折射率。