摘要:
In a semiconductor integrated circuit device that includes macro cells (circuit blocks that can be designed independently) such as a storage circuit and operates synchronously with an external clock, total delay time from signal input to output is reduced and the speed of operation is increased. In the semiconductor integrated circuit device which has plural circuit blocks coupled in series for signal transmission and whose whole operation is controlled by a clock signal, the semiconductor integrated circuit device including first circuit blocks that receive input signals in response to a first timing signal based on a clock signal, and a second circuit block that forms output signals in response to a second timing signal based on the clock signal, a time difference between the first timing signal and the second timing signal is set to a non-integral multiple of the cycle of the clock signal.
摘要:
In a semiconductor integrated circuit device that includes macro cells (circuit blocks that can be designed independently) such as a storage circuit and operates synchronously with an external clock, total delay time from signal input to output is reduced and the speed of operation is increased. In the semiconductor integrated circuit device which has plural circuit blocks coupled in series for signal transmission and whose whole operation is controlled by a clock signal, the semiconductor integrated circuit device including first circuit blocks that receive input signals in response to a first timing signal based on a clock signal, and a second circuit block that forms output signals in response to a second timing signal based on the clock signal, a time difference between the first timing signal and the second timing signal is set to a non-integral multiple of the cycle of the clock signal.
摘要:
The column address strobe signal (CAS) which is changed in cycles as many as a plurality of times that of a clock signal cycle is input to the memory block (MBK0 to MBKn). A plurality of serial data readout from the memory cell array (10) and parallel/serial converted by a parallel/serial converter circuit (21) in synchronism with a clock signal cycle are output for every cycle when the column address signal (CASADR) is changed. Parallel data input to the memory block and serial/parallel converted by a serial/parallel converter circuit (25) in synchronism with the clock signal cycle are written in the memory cell array. In this way, the access specification that the column address strobe signal is varied once per n cycles of the clock signal allows for a more rapid memory operation.
摘要:
Read buffers (RB0-RB3) are capable of holding data read out from a plurality of memory blocks (BNK0-BNK7) that are capable of parallel operation in response to a state in which the read data cannot be externally outputted from an external interface means; and, selection means (40, 41, 42) are provided for selecting data read out from one of the memory blocks, or data read out from one of the read buffers, and for feeding it to the external interface means, while the external-output-incapable state is not present. In this way, when there is a possibility that an output of read data will cause a resource competition, this read data is stored in a read buffer, and when there is no such possibility, then the read data can be externally outputted directly, thereby improving the throughput of read data output operations.
摘要:
Read buffers (RB0-RB3) are capable of holding data read out from a plurality of memory blocks (BNK0-BNK7) that are capable of parallel operation in response to a state in which the read data cannot be externally outputted from an external interface means; and, selection means (40, 41, 42) are provided for selecting data read out from one of the memory blocks, or data read out from one of the read buffers, and for feeding it to the external interface means, while the external-output-incapable state is not present. In this way, when there is a possibility that an output of read data will cause a resource competition, this read data is stored in a read buffer, and when there is no such possibility, then the read data can be externally outputted directly, thereby improving the throughput of read data output operations.
摘要:
A semiconductor integrated circuit device has a memory array which includes amplifying MOSFETs of sense amplifiers which amplify small voltages read out of dynamic memory cells onto bit lines and column switch MOSFETs which select bit lines, a read/write section which includes main amplifiers for reading out stored data from memory cells selected by the column switch, and a logic circuit which implements the input/output operation of data with the read/write section. Two capacitors each having a first electrode which corresponds to a plate electrode with the same structure as that of storage capacitors of dynamic memory cells and a second electrode which is multiple commonly-connected storage nodes of the storage capacitors are arranged in serial connection, disposed contiguously to the read/write section, and connected between operation voltage lines of the read/write section.
摘要:
This invention provides a lithium secondary battery that comprises a positive electrode comprising a positive electrode active material layer and a negative electrode comprising a negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are placed to face each other. The negative electrode active material layer has an area A comprising a non-positive-electrode-facing portion that does not face the positive electrode active material layer. The area A comprises a negative electrode active material, a hot-melt binder and a temperature-sensitive thickener. The hot-melt binder has a melting point and the temperature-sensitive thickener has a gelation temperature both in a range of 45° C. to 100° C.
摘要:
A socket for electrical part mounted on the wiring substrate to accommodate an electrical part. The present invention comprises a socket body, a floating plate and a holding structure. The socket body has a contact pin unit comprising a unit body in which the plural contact pins are mounted. The floating plate is mounted on upper side of the unit body to accommodate the electrical part, and comprises through holes into which the upper side contact portions of contact pins are inserted. The holding structure holds the floating plate in a descended state when the socket for the electrical part is not yet mounted on the wiring substrate, and releases the holding state of floating plate and makes the floating plate to be capable of moving vertically under the state of being urged upward when the socket for the electrical part is mounted on the wiring substrate.
摘要:
A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity diffusion regions; a conductive plug embedded in one of the contact holes; a third insulating film formed on the second insulating film covering the conductive plug, and having a first aperture on the other contact hole; a bit line formed on the third insulating film and connected to the other impurity diffusion region through the first aperture and the other contact hole; a fourth insulating film covering the upper and side surfaces of the bit line; a second aperture formed through the third insulating film in alignment with the fourth insulating film covering the side surface of the bit line; a storage electrode formed to extend over the bit line, insulated from the bit line by the third and fourth insulating films, and electrically connected to the conductive plug through the second aperture.
摘要:
Disclosed is a non-aqueous electrolyte secondary battery including: a spirally-wound electrode group including a continuous first electrode, a continuous second electrode, and a continuous separator interposed between the first electrode and the second electrode; and a non-aqueous electrolyte. The first electrode includes a sheet-like first current collector, and a first active material layer formed on a surface of the first current collector; and the second electrode includes a sheet-like second current collector, and a second active material layer formed on a surface of the second current collector. In the electrode group, the winding terminal end of the first electrode faces the second electrode on the further outer peripheral side, with the separator interposed therebetween. The facing site of the second electrode where the second electrode faces the winding terminal end of the first electrode is reinforced with a reinforcing component for supplementing the thickness of the second electrode.