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公开(公告)号：US08486837B2
公开(公告)日：2013-07-16
申请号：US12318376
申请日：2008-12-29
申请人： Hiroshi Ono , Katsuyuki Masuda , Masanobu Habiro
发明人： Hiroshi Ono , Katsuyuki Masuda , Masanobu Habiro
IPC分类号： H01L21/00 , H01L21/02019 , H01L21/02247 , H01L21/30 , C11D11/0047 , C11D3/3945
CPC分类号： B24B37/00 , B24B37/04 , B24B37/044 , C09G1/02 , C23F1/42 , C23F3/00 , C23F3/06 , H01L21/3212
摘要： A polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, wherein the metal inhibitor is at least one of a compound having an amino-triazole skeleton and a compound having an imidazole skeleton. The use of the polishing slurry for metal makes it possible to raise the polishing speed sufficiently while keeping the etching speed low, restrain the generation of corrosion of the surface of a metal and dishing, and form a metal-film-buried pattern having a high reliability in the process of formation of wiring of semiconductor devices.
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公开(公告)号：US20060143990A1
公开(公告)日：2006-07-06
申请号：US10560228
申请日：2003-06-13
申请人： Hiroshi Ono , Katsuyuki Masuda , Masanobu Habiro
发明人： Hiroshi Ono , Katsuyuki Masuda , Masanobu Habiro
IPC分类号： C09K3/14
CPC分类号： H01L21/3212 , C09G1/02
摘要： A polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, wherein the metal inhibitor is at least one of a compound having an amino-triazole skeleton and a compound having an imidazole skeleton. The use of the polishing slurry for metal makes it possible to raise the polishing speed sufficiently while keeping the etching speed low, restrain the generation of corrosion of the surface of a metal and dishing, and form a metal-film-buried pattern having a high reliability in the process of formation of wiring of semiconductor devices.
摘要翻译： 金属研磨用浆料包含氧化剂，金属氧化物溶解剂，金属抑制剂和水，其中金属抑制剂是具有氨基 - 三唑骨架的化合物和具有咪唑骨架的化合物中的至少一种。 通过使用金属研磨用浆料，能够使蚀刻速度保持在较低的水平，提高研磨速度，抑制金属表面的腐蚀和凹陷的产生，形成高的金属膜埋藏图案 在半导体器件布线形成过程中的可靠性。
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公开(公告)号：US20090117829A1
公开(公告)日：2009-05-07
申请号：US12318376
申请日：2008-12-29
申请人： Hiroshi Ono , Katsuyuki Masuda , Masanobu Habiro
发明人： Hiroshi Ono , Katsuyuki Masuda , Masanobu Habiro
CPC分类号： B24B37/00 , B24B37/04 , B24B37/044 , C09G1/02 , C23F1/42 , C23F3/00 , C23F3/06 , H01L21/3212
摘要： A polishing slurry for metal comprises an oxidizer, a metal oxide dissolving agent, a metal inhibitor, and water, wherein the metal inhibitor is at least one of a compound having an amino-triazole skeleton and a compound having an imidazole skeleton. The use of the polishing slurry for metal makes it possible to raise the polishing speed sufficiently while keeping the etching speed low, restrain the generation of corrosion of the surface of a metal and dishing, and form a metal-film-buried pattern having a high reliability in the process of formation of wiring of semiconductor devices.
摘要翻译： 金属研磨用浆料包含氧化剂，金属氧化物溶解剂，金属抑制剂和水，其中金属抑制剂是具有氨基 - 三唑骨架的化合物和具有咪唑骨架的化合物中的至少一种。 通过使用金属研磨用浆料，能够使蚀刻速度保持在较低的水平，提高研磨速度，抑制金属表面的腐蚀和凹陷的产生，形成高的金属膜埋藏图案 在半导体器件布线形成过程中的可靠性。
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公开(公告)号：US20050181609A1
公开(公告)日：2005-08-18
申请号：US10513002
申请日：2003-04-28
IPC分类号： B24B37/00 , C09G1/02 , C09G1/04 , H01L21/321 , H01L21/302 , H01L21/461
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/3212
摘要： A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more types selected from one or more acids (A-group) selected from acids of which the dissociation constant (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more types selected from one or more acids (B-group) selected from acids of which the dissociation constant (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
摘要翻译： 包括氧化剂，金属氧化物溶解器，金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的一种（A-group）酸： 其中第一离解酸基团的解离常数（pKa）小于3.7，排除了乳酸，邻苯二甲酸，富马酸，马来酸和氨基乙酸的五种酸，A组的铵盐和 A组和选自一种或多种选自第一可解离酸基团的解离常数（pKa）为3.7以上的酸的酸（B组）和5种酸的一种或多种，以及五种酸的铵盐 B族的B族和酯类。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架，咪唑骨架，胍等任意一种的化合物的一种或多种的一种或多种 骨架，噻唑骨架和吡唑骨架。 具有高金属抛光速率，降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。
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公开(公告)号：US08696929B2
公开(公告)日：2014-04-15
申请号：US11808047
申请日：2007-06-06
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/3212
摘要： A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
摘要翻译： 包括氧化剂，金属氧化物溶解器，金属抑制剂和水，并且具有2至5的pH的抛光浆料。具有高金属抛光速率，降低蚀刻速率和抛光摩擦的抛光浆料导致生产， 半导体器件的高生产率降低了金属布线中的凹陷和侵蚀。
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公开(公告)号：US07367870B2
公开(公告)日：2008-05-06
申请号：US10513002
申请日：2003-04-28
IPC分类号： C09K13/00
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/3212
摘要： A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from one or more acids (A-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more compounds selected from one or more acids (B-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
摘要翻译： 包括氧化剂，金属氧化物溶解器，金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的化合物（A-group），所述酸选自： 其中第一离解酸基团的解离常数Ka（pKa）的对数的负值小于3.7，并且排除了乳酸，邻苯二甲酸，富马酸，马来酸和氨基乙酸的五种酸，铵盐 的A基团和A基团的酯，以及一种或多种选自一种或多种酸（B族）的化合物，所述酸选自其中解离常数Ka（pKa）的对数的负值为 第一离解酸基团为3.7以上，B族的5种酸，铵盐和B族的酯。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架，咪唑骨架，胍等任意一种的化合物的一种或多种的一种或多种 骨架，噻唑骨架和吡唑骨架。 具有高金属抛光速率，降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。
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公开(公告)号：US20080003924A1
公开(公告)日：2008-01-03
申请号：US11808047
申请日：2007-06-06
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/3212
摘要： A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from one or more acids (A-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more compounds selected from one or more acids (B-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
摘要翻译： 包括氧化剂，金属氧化物溶解器，金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的化合物（A-group），所述酸选自： 其中第一离解酸基团的解离常数Ka（pKa）的对数的负值小于3.7，并且排除了乳酸，邻苯二甲酸，富马酸，马来酸和氨基乙酸的五种酸，铵盐 的A基团和A基团的酯，以及一种或多种选自一种或多种酸（B族）的化合物，所述酸选自其中解离常数Ka（pKa）的对数的负值为 第一离解酸基团为3.7以上，B族的5种酸，铵盐和B族的酯。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架，咪唑骨架，胍等任意一种的化合物的一种或多种的一种或多种 骨架，噻唑骨架和吡唑骨架。 具有高金属抛光速率，降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。
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公开(公告)号：US20070295934A1
公开(公告)日：2007-12-27
申请号：US11808038
申请日：2007-06-06
IPC分类号： C09K13/00
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09G1/04 , C09K3/1463 , H01L21/3212
摘要： A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The metal oxide dissolver contains one or more compounds selected from one or more acids (A-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is less than 3.7 and from which five acids of lactic acid, phthalic acid, fumaric acid, maleic acid and aminoacetic acid are excluded, ammonium salts of the A-group and esters of the A-group, and one or more compounds selected from one or more acids (B-group) selected from acids of which the negative value of the logarithm of the dissociation constant Ka (pKa) of a first dissociable acid group is 3.7 or more and the five acids, ammonium salts of the B-group and esters of the B-group. The metal inhibitor contains one or more types selected from the group consisting of aromatic compounds having a triazole skeleton and one or more types selected from the group consisting of aliphatic compounds having a triazole skeleton and compounds having any one of pyrimidine skeleton, imidazole skeleton, guanidine skeleton, thiazole skeleton and pyrazole skeleton. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.
摘要翻译： 包括氧化剂，金属氧化物溶解器，金属抑制剂和水并且pH为2至5的抛光浆料。金属氧化物溶解器含有一种或多种选自一种或多种选自以下的酸的化合物（A-group），所述酸选自： 其中第一离解酸基团的解离常数Ka（pKa）的对数的负值小于3.7，并且排除了乳酸，邻苯二甲酸，富马酸，马来酸和氨基乙酸的五种酸，铵盐 的A基团和A基团的酯，以及一种或多种选自一种或多种酸（B族）的化合物，所述酸选自其中解离常数Ka（pKa）的对数的负值为 第一离解酸基团为3.7以上，B族的5种酸，铵盐和B族的酯。 金属抑制剂含有选自具有三唑骨架的芳香族化合物和选自具有三唑骨架的脂肪族化合物和具有嘧啶骨架，咪唑骨架，胍等任意一种的化合物的一种或多种的一种或多种 骨架，噻唑骨架和吡唑骨架。 具有高金属抛光速率，降低蚀刻速率和抛光摩擦的抛光浆料导致半导体器件的高生产率的生产减少了金属布线中的凹陷和侵蚀。
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9.发明授权Silicon-containing alicyclic polyimide resin, polyamic acid resin, and manufacturing method for same 有权含硅脂环族聚酰亚胺树脂，聚酰胺酸树脂及其制造方法公开(公告)号：US08592546B2
公开(公告)日：2013-11-26
申请号：US13583727
申请日：2011-04-13
IPC分类号： C08G77/452
CPC分类号： C08G73/106 , C08G69/42 , C08G73/105 , C08G73/1075 , C08G73/1078 , C08G77/455
摘要： A polyimide resin including repeating units represented by formula (1): wherein R is a diamine residue or a diisocyanate residue; m is an integer of 2 to 30; any of silicon atoms bonded to norbornane rings is in exo configuration with respect to the norbornane rings; and any of imide rings bonded to the norbornane rings is in exo configuration with respect to the norbornane rings, and a polyamic acid resin including repeating units represented by formula (2): wherein R is a diamine residue; m is an integer of 2 to 30; any of silicon atoms bonded to norbornane rings is in exo configuration with respect to the norbornane rings; and any of amide groups and carboxyl groups bonded to the norbornane rings is in exo configuration with respect to the norbornane rings. The polyimide resin is soluble in general-purpose solvents, has a good transparency and a high molecular weight, and is excellent in mechanical properties, such as tensile strength and elongation.
摘要翻译： 包含由式（1）表示的重复单元的聚酰亚胺树脂：其中R是二胺残基或二异氰酸酯残基; m为2〜30的整数， 与降冰片烷环结合的任何硅原子相对于降冰片烷环都处于外部构型; 并且与降冰片烷环结合的任何酰亚胺环相对于降冰片烷环为外部构型，和包含由式（2）表示的重复单元的聚酰胺酸树脂：其中R是二胺残基; m为2〜30的整数， 与降冰片烷环结合的任何硅原子相对于降冰片烷环都处于外部构型; 与降冰片烷环结合的酰胺基和羧基中的任何一个相对于降冰片烷环都处于外部构型。 聚酰亚胺树脂可溶于通用溶剂，透明度高，分子量高，机械性能优异，拉伸强度和伸长率优异。
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10.发明授权Flexible laminate board, process for manufacturing of the board, and flexible print wiring board 失效柔性层压板，板的制造工艺和柔性印刷线路板公开(公告)号：US08501279B2
公开(公告)日：2013-08-06
申请号：US12091519
申请日：2006-10-19
申请人： Masahiko Suzuki , Kazuhito Obata , Katsuyuki Masuda , Kenichi Tomioka , Masaki Takeuchi , Sumio Yoshida , Hirokazu Suzuki , Yoshitsugu Matsuura
发明人： Masahiko Suzuki , Kazuhito Obata , Katsuyuki Masuda , Kenichi Tomioka , Masaki Takeuchi , Sumio Yoshida , Hirokazu Suzuki , Yoshitsugu Matsuura
CPC分类号： H05K1/0346 , H05K3/022 , H05K2201/0154 , H05K2201/0358 , H05K2203/0759 , H05K2203/087 , H05K2203/1157 , H05K2203/163 , Y10T428/24917 , Y10T428/261 , Y10T428/27
摘要： A process for production of a flexible laminated sheet having one or more laminated bodies each provided with a metal foil formed on one side of a resin film, the process comprising a coating step in which a varnish containing a polyamic acid and a solvent is coated onto the metal foil to form a coated film, a holding step in which the coated film formed on the metal foil is held, a drying step in which at least a portion of the solvent in the varnish is removed to form a layer composed of a resin composition, and a resin film-forming step in which the layer composed of the resin composition is heated to form a resin film containing a polyimide resin. The conditions for each step from the coating step up to the resin film-forming step are adjusted based on a target for the content of metal elements in the resin film.
摘要翻译： 一种制造具有一个或多个层叠体的柔性层叠片的方法，每个层叠体均设置有形成在树脂膜的一侧上的金属箔，该方法包括涂布步骤，其中将包含聚酰胺酸和溶剂的清漆涂覆到 金属箔以形成涂膜，保持在金属箔上形成的涂膜的保持步骤，其中除去清漆中的至少一部分溶剂以形成由树脂构成的层的干燥步骤 组合物和树脂膜形成步骤，其中由树脂组合物组成的层被加热以形成含有聚酰亚胺树脂的树脂膜。 基于树脂膜中的金属元素含量的目标，调整从涂布步骤到树脂成膜步骤的每个步骤的条件。
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