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    SILANE POLYMER AND METHOD FOR FORMING SILICON FILM
    3.
    发明申请
    SILANE POLYMER AND METHOD FOR FORMING SILICON FILM 审中-公开
    硅烷聚合物和形成硅膜的方法

    公开(公告)号：US20090215920A1

    公开(公告)日：2009-08-27

    申请号：US12398451

    申请日：2009-03-05

    申请人： Haruo Iwasawa ,  Daohai Wang ,  Yasuo Matsuki ,  Hitoshi Kato

    发明人： Haruo Iwasawa ,  Daohai Wang ,  Yasuo Matsuki ,  Hitoshi Kato

    IPC分类号： C08F2/46 ,  B05D3/02 ,  B05D3/06

    CPC分类号： C09D183/16 ,  C01B33/08 ,  C09D4/00 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  C08G77/00

    摘要： There are provided a silane polymer having a higher molecular weight from the viewpoints of wettability when applied to a substrate, a boiling point and safety, a composition which can form a high-quality silicon film easily, a silicon film forming composition which comprises a silane polymer obtained by irradiating a photopolymerizable silane compound with light of specific wavelength range to photopolymerize it, and a method for forming a silicon film which comprises applying the composition to a substrate and subjecting the coating film to a heat treatment and/or a light treatment.

    摘要翻译： 从涂布在基材上的润湿性，沸点和安全性的观点出发，提供了具有较高分子量的硅烷聚合物，可以容易地形成高质量硅膜的组合物，包含硅烷 通过用特定波长范围的光照射光聚合性硅烷化合物而获得的聚合物进行光聚合;以及形成硅膜的方法，其包括将该组合物涂布在基材上，对该涂膜进行热处理和/或光处理。

    Silane composition, silicon film forming method and solar cell production method
    6.
    发明授权
    Silane composition, silicon film forming method and solar cell production method 失效
    硅烷组成，硅膜形成方法和太阳能电池的制备方法

    公开(公告)号：US07173180B2

    公开(公告)日：2007-02-06

    申请号：US11404921

    申请日：2006-04-17

    申请人： Hiroshi Shiho ,  Hitoshi Kato

    发明人： Hiroshi Shiho ,  Hitoshi Kato

    IPC分类号： H01L31/0256

    CPC分类号： H01L31/1804 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1279 ,  C23C18/14 ,  H01L21/228 ,  Y02E10/547 ,  Y02P70/521

    摘要： A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm (n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more), and at least one silane compound selected from cyclopentasilane, cyclohexasilane and silylcyclopentasilane.

    摘要翻译： 公开了一种用于制备太阳能电池半导体薄膜的硅烷组合物。 硅烷组合物含有下式表示的聚硅烷化合物（n为3以上的整数，m为n〜（2n + 2）的整数 ）和m个R各自独立地为氢原子，烷基，苯基或卤素原子，条件是当全部m个R为氢原子且m = 2n时，n为7以上的整数 ）和至少一种选自环戊硅烷，环己硅烷和甲硅烷基环戊硅烷的硅烷化合物。

    Silane composition, silicon film forming method and solar cell production method
    8.
    发明授权
    Silane composition, silicon film forming method and solar cell production method 失效
    硅烷组成，硅膜形成方法和太阳能电池的制备方法

    公开(公告)号：US07067069B2

    公开(公告)日：2006-06-27

    申请号：US10216790

    申请日：2002-08-13

    申请人： Hiroshi Shiho ,  Hitoshi Kato

    发明人： Hiroshi Shiho ,  Hitoshi Kato

    IPC分类号： C23C18/12 ,  H01L31/028

    CPC分类号： H01L31/1804 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1279 ,  C23C18/14 ,  H01L21/228 ,  Y02E10/547 ,  Y02P70/521

    摘要： A silane composition for preparing a semiconductor thin films of a solar cell is disclosed. The silane composition contains a polysilane compound represented by the formula SinRm (n is an integer of 3 or more, m is an integer of n to (2n+2) and an m number of R's are each independently a hydrogen atom, alkyl group, phenyl group or halogen atom, with the proviso that when all the m number of R's are hydrogen atoms and m=2n, n is an integer of 7 or more), and at least one silane compound selected from cyclopentasilane, cyclohexasilane and silylcyclopentasilane.

    摘要翻译： 公开了一种用于制备太阳能电池的半导体薄膜的硅烷组合物。 硅烷组合物含有下式表示的聚硅烷化合物（n为3以上的整数，m为n〜（2n + 2）的整数 ）和m个R各自独立地为氢原子，烷基，苯基或卤素原子，条件是当全部m个R为氢原子且m = 2n时，n为7以上的整数 ）和至少一种选自环戊硅烷，环己硅烷和甲硅烷基环戊硅烷的硅烷化合物。

    Film deposition apparatus
    9.
    发明授权
    Film deposition apparatus 有权
    膜沉积装置

    公开(公告)号：US09297072B2

    公开(公告)日：2016-03-29

    申请号：US12620750

    申请日：2009-11-18

    申请人： Hitoshi Kato ,  Manabu Honma

    发明人： Hitoshi Kato ,  Manabu Honma

    IPC分类号： C23C16/455 ,  H01L21/677 ,  H01L21/67 ,  C23C16/40

    CPC分类号： C23C16/4551 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45578 ,  H01L21/6719 ,  H01L21/67703

    摘要： A film deposition apparatus includes a rotary table having a substrate placement area to support a substrate, a vacuum container including a container and a top panel, an open-and-close mechanism configured to open and close the top panel, reactant gas nozzles disposed through and supported by an outer wall of the container to be situated at different angular positions with respect to a rotation center of the rotary table to face areas in which the substrate placement area passes, the reactant gas nozzles having gas discharge ports arranged in radial directions to supply respective reactant gases to the wafer thereby to form respective process areas, a discharge gas supply unit situated at an angular position between the process areas to supply purge gas to form an isolation area that isolates atmospheres of the process areas from each other, and an exhaustion unit configured to exhaust atmosphere inside the vacuum container.

    摘要翻译： 一种成膜装置，包括具有用于支撑基板的基板放置区域的旋转台，包括容器和顶板的真空容器，构造成打开和关闭顶板的开闭机构，布置成穿过的反应气体喷嘴 并且由所述容器的外壁支撑，以相对于所述旋转台的旋转中心位于不同的角度位置，以面对所述基板放置区域通过的区域，所述反应气体喷嘴具有沿径向布置的气体排出口， 将相应的反应气体供应到晶片，从而形成相应的处理区域，放电气体供应单元位于处理区域之间的角位置处，以供应净化气体，以形成隔离区域，隔离区域将过程区域的气氛彼此隔离;以及 排气单元构造成排出真空容器内的气氛。

    Film deposition apparatus
    10.
    发明授权
    Film deposition apparatus 有权
    膜沉积装置

    公开(公告)号：US09103030B2

    公开(公告)日：2015-08-11

    申请号：US12627144

    申请日：2009-11-30

    申请人： Hitoshi Kato ,  Manabu Honma

    发明人： Hitoshi Kato ,  Manabu Honma

    IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/44 ,  C23C16/40

    CPC分类号： C23C16/45551 ,  C23C16/402 ,  C23C16/4412 ,  C23C16/45578

    摘要： In a film deposition apparatus, a first separation gas is discharged from a separation gas supplying portion to a separation area between a first process area to which a first reaction gas is supplied and a second process area to which a second reaction gas is supplied. A heater is provided to heat the turntable by radiation heat. An outer sidewall member is provided in a bottom part of a vacuum chamber to surround the turntable in an area where the heater is provided. A space forming member is provided between the separation areas adjacent to each other in a rotating direction of the turntable and extending from the outer sidewall member to form a narrow space between the turntable. A purge gas flows from a lower side of the turntable to an area outside the turntable in a radial direction through the narrow space.

    摘要翻译： 在成膜装置中，第一分离气体从分离气体供给部排出到供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域。 提供加热器以通过辐射热来加热转台。 外侧壁构件设置在真空室的底部，以在设置加热器的区域中围绕转台。 空间形成构件设置在转台的旋转方向上彼此相邻的分隔区域之间并且从外侧壁构件延伸以在转台之间形成狭窄的空间。 吹扫气体从转台的下侧流过转台的外侧，通过狭窄的空间沿径向流动。