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    TAG extracting device, TAG extracting method, and computer product
    1.
    发明申请
    TAG extracting device, TAG extracting method, and computer product 审中-公开
    TAG提取装置，TAG提取方法和计算机产品

    公开(公告)号：US20080030335A1

    公开(公告)日：2008-02-07

    申请号：US11819509

    申请日：2007-06-27

    申请人： Hirotake Nishida ,  Norihiro Nakamura ,  Haruo Obana ,  Takeshi Miki ,  Ichirou Ono ,  Takao Nakamura ,  Hideshi Numata

    发明人： Hirotake Nishida ,  Norihiro Nakamura ,  Haruo Obana ,  Takeshi Miki ,  Ichirou Ono ,  Takao Nakamura ,  Hideshi Numata

    IPC分类号： G08B13/14

    CPC分类号： G01S5/02 ,  G01S5/0273 ,  G06K7/0008

    摘要： A plurality of RFID tags that store therein position information and other information are arranged at different locations, and a tag extracting device extracts at least one RFID tag among the RFID tags. The tag extracting device includes a reading unit that reads position information from a plurality of information-read RFID tags from among the plurality of RFID tags; a determining unit that determines, based on read position information, an area where the information-read RFID tags are concentrated; and an extracting unit that extracts at least one RFID tag from among the information-read RFID tags as a target RFID tag whose the other information is to be used in subsequent processing.

    摘要翻译： 存储位置信息和其他信息的多个RFID标签被布置在不同的位置，并且标签提取装置在RFID标签中提取至少一个RFID标签。 标签提取装置包括从多个RFID标签中的多个信息读取RFID标签中读取位置信息的读取单元; 确定单元，其基于读取位置信息确定信息读取RFID标签集中的区域; 以及提取单元，其从所述信息读取RFID标签中提取至少一个RFID标签作为其他信息将用于后续处理的目标RFID标签。

    Liquid crystal display device
    3.
    发明授权
    Liquid crystal display device 有权
    液晶显示装置

    公开(公告)号：US08563982B2

    公开(公告)日：2013-10-22

    申请号：US13311595

    申请日：2011-12-06

    申请人： Takao Nakamura ,  Kazuki Ishii ,  Daisuke Mutou ,  Hidenori Seki

    发明人： Takao Nakamura ,  Kazuki Ishii ,  Daisuke Mutou ,  Hidenori Seki

    IPC分类号： H01L27/14

    CPC分类号： G02F1/136286 ,  G02F1/133345 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/133354

    摘要： In a liquid crystal display device that uses a top gate TFT, a contact hole is formed to connect to an image signal line. An inorganic passivation film and an organic passivation film are formed in this order so as to cover the TFT, on which a common electrode is formed. Then, an interlayer insulating film is formed on the common electrode. A through hole for gas release is formed in the interlayer insulating film. The diameter of the through hole is greater than the diameter of the contact hole, so as to be able to easily release gas from the organic passivation film, and to prevent the interlayer insulating film from peeling off.

    摘要翻译： 在使用顶栅TFT的液晶显示装置中，形成与图像信号线连接的接触孔。 依次形成无机钝化膜和有机钝化膜，以覆盖其上形成有公共电极的TFT。 然后，在公共电极上形成层间绝缘膜。 在层间绝缘膜中形成用于气体释放的通孔。 通孔的直径大于接触孔的直径，从而能够容易地从有机钝化膜释放气体，并且防止层间绝缘膜剥离。

    GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE
    4.
    发明申请
    GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE 失效
    III族氮化物半导体器件，外延衬底以及制备III族氮化物半导体器件的方法

    公开(公告)号：US20120299010A1

    公开(公告)日：2012-11-29

    申请号：US13484776

    申请日：2012-05-31

    申请人： Yohei ENYA ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

    发明人： Yohei ENYA ,  Yusuke Yoshizumi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

    IPC分类号： H01L33/32

    CPC分类号： H01L21/02458 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2302/00

    摘要： A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.

    摘要翻译： III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底，其具有沿与第一参考平面垂直的第一参考平面延伸的第一表面，所述第一参考平面垂直于相对于III族氮化物的c轴以预定角度倾斜的参考轴 半导体和设置在支撑基体的主表面上的外延半导体区域。 外延半导体区域包括GaN基半导体层。 基准轴从III族氮化物半导体的c轴朝向第一晶轴倾斜第一角度，即m轴或a轴。 基准轴从III族氮化物半导体的c轴向第二晶轴倾斜第二角度，m轴和a轴的另一方倾斜。 外延半导体区域的最外表面的形态包括多个凹坑。 坑的坑密度不大于5×104cm-2。

    Light-Emitting Device Substrate
    5.
    发明申请
    Light-Emitting Device Substrate 审中-公开
    发光器件基板

    公开(公告)号：US20110272734A1

    公开(公告)日：2011-11-10

    申请号：US13144696

    申请日：2009-11-11

    申请人： Akihiro Hachigo ,  Takao Nakamura ,  Masashi Yoshimura

    发明人： Akihiro Hachigo ,  Takao Nakamura ,  Masashi Yoshimura

    IPC分类号： H01L33/30

    CPC分类号： C30B25/18 ,  C30B29/403 ,  H01L33/007

    摘要： The present invention is a minimal-defect light-emitting device substrate that enables emitted light to issue from a device's substrate side, and is a light-emitting device 100 substrate furnished with a transparent substrate 10 that is transparent to light of wavelengths between 400 nm and 600 nm, inclusive, and a nitride-based compound semiconductor thin film 1c formed onto one of the major surfaces of the transparent substrate 10 by a join. Letting the thermal expansion coefficient of the transparent substrate along a direction perpendicular to the major surface of the transparent substrate be α1, and the thermal expansion coefficient of the nitride-based compound semiconductor thin film be α2, then (α1−α2)/α2 is between −0.5 and 1.0, inclusive, and at up to 1200° C. the transparent substrate does not react with the nitride-based compound semiconductor thin film 1c. The absolute index of refraction of the transparent substrate 10 preferably is between 60% and 140%, inclusive, of the absolute index of refraction of the nitride-based compound semiconductor thin film.

    摘要翻译： 本发明是一种使发射光能够从器件的衬底侧发出的最小缺陷发光器件衬底，并且是配备透明衬底10的发光器件100衬底，透明衬底10对波长在400nm之间的光是透明的 和600nm，以及通过接合形成在透明基板10的一个主表面上的氮化物系化合物半导体薄膜1c。 使透明基板沿着与透明基板的主面垂直的方向的热膨胀系数为α1，氮化物系化合物半导体薄膜的热膨胀系数为α2，则α1-α2/α2为 在-0.5和1.0之间，并且在高达1200℃下，透明衬底不与氮化物基化合物半导体薄膜1c反应。 透明基板10的绝对折射率优选在氮化物系化合物半导体薄膜的绝对折射率的60％〜140％的范围内。

    Gallium nitride-based epitaxial wafer and method of fabricating epitaxial wafer
    6.
    发明授权
    Gallium nitride-based epitaxial wafer and method of fabricating epitaxial wafer 有权
    基于氮化镓的外延晶片和制造外延晶片的方法

    公开(公告)号：US08018029B2

    公开(公告)日：2011-09-13

    申请号：US12565290

    申请日：2009-09-23

    申请人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

    发明人： Yusuke Yoshizumi ,  Masaki Ueno ,  Takao Nakamura

    IPC分类号： H01L29/20 ,  H01L33/00

    CPC分类号： H01L33/32 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/16

    摘要： A gallium nitride-based epitaxial wafer for a nitride light-emitting device comprises a gallium nitride substrate having a primary surface, a gallium nitride-based semiconductor film provided on the primary surface, and, an active layer provided on the semiconductor film, the active layer having a quantum well structure. A normal line of the primary surface and a C-axis of the gallium nitride substrate form an off angle with each other. The off angle monotonically increases on the line that extends from one point to another point through a center point of the primary surface. The one point and the other point are on an edge of the primary surface, and indium contents of the well layer defined at n points on the line monotonically decrease in a direction from the one point to the other point. The thickness values of the well layer defined at the n points monotonically increase in the direction.

    摘要翻译： 用于氮化物发光器件的氮化镓基外延晶片包括具有主表面的氮化镓衬底，设置在主表面上的氮化镓基半导体膜，以及设置在半导体膜上的有源层，活性层 层具有量子阱结构。 主表面的法线和氮化镓衬底的C轴彼此形成偏离角。 在从一个点延伸到另一个点通过主表面的中心点的直线上，偏角单调增加。 一点和另一点位于主表面的边缘上，在线上n点定义的阱层的铟含量在从一点到另一点的方向上单调减小。 在n点定义的阱层的厚度值在方向上单调增加。

    Digital watermark embedding method, digital watermark embedding apparatus, and storage medium storing a digital watermark embedding program
    7.
    发明授权
    Digital watermark embedding method, digital watermark embedding apparatus, and storage medium storing a digital watermark embedding program 有权
    数字水印嵌入方法，数字水印嵌入装置和存储数字水印嵌入程序的存储介质

    公开(公告)号：US07817818B2

    公开(公告)日：2010-10-19

    申请号：US11412210

    申请日：2006-04-25

    申请人： Takao Nakamura ,  Hiroshi Ogawa ,  Atsuki Tomioka ,  Youichi Takashima

    发明人： Takao Nakamura ,  Hiroshi Ogawa ,  Atsuki Tomioka ,  Youichi Takashima

    IPC分类号： G06K9/00

    CPC分类号： G06T1/0028 ,  G06T2201/0051 ,  G06T2201/0052 ,  G06T2201/0061 ,  G06T2201/0083 ,  G06T2201/0202 ,  H04N1/32203 ,  H04N1/32208 ,  H04N1/32293 ,  H04N2201/3233 ,  H04N2201/327

    摘要： A method for embedding a watermark into digital data, when the watermark is to be embedded in a digital image, independently changes real number components and imaginary number components of each of coefficient values of a complex watermark coefficient matrix using key, from the watermark to be embedded in the digital image, a step for performing a discrete Fourier inverse transform on the sequence matrix of the changed watermark and generating a watermark pattern; and a step for adding like tiling the water mark pattern to the original image, and generating an embedded image.Further more, a watermark detection method for detecting a watermark from a digital data, a step for separating a block from an arbitrary position on the detected object image, a step for performing a discrete Fourier transform on the block and obtaining a sequence matrix, a step for generating position information for a component that is to be detected and that is specified by the key, a step for detecting a position marker sequence by calculating a phase difference of a sequence by an amount of parallel displacement, for each item of the position information, and extracting offset information which is the amount of parallel displacement when there is agreement between a start point of an embedded watermark and a start point of the block cut from the detected object image, and a step for detecting the embedded watermark cut from the detected object image.

    摘要翻译： 一种将水印嵌入数字数据的方法，当将水印嵌入到数字图像中时，使用密钥从水印中独立地改变复数水印系数矩阵的每个系数值的实数分量和虚数分量， 嵌入在数字图像中的步骤，用于对改变的水印的序列矩阵执行离散傅立叶逆变换并产生水印图案; 以及将水印图案拼贴到原始图像上的添加步骤，以及生成嵌入图像。 此外，还提供了一种用于从数字数据中检测水印的水印检测方法，用于从检测到的对象图像上的任意位置分离块的步骤，对该块执行离散付里叶变换并获得序列矩阵的步骤， 用于生成要被检测并由密钥指定的组件的位置信息的步骤，用于通过针对每个位置的项目计算一个序列的平均位移量来检测位置标记序列的步骤 信息，并且提取作为在嵌入水印的开始点与从检测到的对象图像切割的块的开始点之间一致时的平行位移量的偏移信息，以及用于检测从检测到的对象图像切入的嵌入水印的步骤 检测到物体图像。

    GUANOSINE TRIPHOSPHATE (GTP)-BINDING PROTEIN-COUPLED RECEPTOR PROTEIN, BG37
    8.
    发明申请
    GUANOSINE TRIPHOSPHATE (GTP)-BINDING PROTEIN-COUPLED RECEPTOR PROTEIN, BG37 失效
    冠状三磷酸（GTP） - 蛋白质偶联受体蛋白BG37

    公开(公告)号：US20100184236A1

    公开(公告)日：2010-07-22

    申请号：US12716906

    申请日：2010-03-03

    申请人： TAKAHARU MARUYAMA ,  Takao Nakamura ,  Hiraku Itadani ,  Ken-Ichi Tanaka

    发明人： TAKAHARU MARUYAMA ,  Takao Nakamura ,  Hiraku Itadani ,  Ken-Ichi Tanaka

    IPC分类号： G01N33/566 ,  C07K14/435

    CPC分类号： C07K14/705

    摘要： The present inventors conducted a similarity search of the amino acid sequence of known G protein-coupled receptor proteins in GenBank, and obtained a novel human GPCR gene “BG37”, cDNA containing the ORF of the gene was cloned and its nucleotide sequence was determined. Moreover, novel GPCR “BG37” genes from mouse and rat were isolated. Use of the novel GPCR of the present invention enables screening of ligands, compounds inhibiting the binding to a ligand, and candidate compounds of pharmaceuticals which can regulate signal transduction from the “BG37” receptor.

    摘要翻译： 本发明人对GenBank中已知的G蛋白偶联受体蛋白质的氨基酸序列进行了相似检索，得到新的人GPCR基因“BG37”，克隆了含有该基因的ORF的cDNA，并测定其核苷酸序列。 此外，分离了来自小鼠和大鼠的新型GPCR“BG37”基因。 使用本发明的新型GPCR能够筛选配体，抑制与配体结合的化合物，以及可调节从“BG37”受体的信号转导的药物的候选化合物。

    Method and apparatus for digital watermarking
    9.
    发明授权
    Method and apparatus for digital watermarking 失效
    数字水印的方法和装置

    公开(公告)号：US07640431B2

    公开(公告)日：2009-12-29

    申请号：US10634155

    申请日：2003-08-04

    申请人： Hiroshi Ogawa ,  Takao Nakamura ,  Atsuki Tomioka ,  Youichi Takashima

    发明人： Hiroshi Ogawa ,  Takao Nakamura ,  Atsuki Tomioka ,  Youichi Takashima

    IPC分类号： H04L9/32

    CPC分类号： G06T1/0028 ,  G06T2201/0052 ,  G06T2201/0083 ,  H04N1/32154 ,  H04N19/467

    摘要： A method for embedding digital watermark data in digital data contents includes the steps of obtaining a frequency coefficient of block data of digital data contents, obtaining a complexity of the block data, obtaining an amount of transformation of the frequency coefficient from the complexity and the digital watermark data, and embedding the digital watermark data by transforming the frequency coefficient. In addition, a method for reading digital watermark data includes the steps of calculating a probability of reading ‘1’ or ‘0’ in a read bit sequence by using a test method on the basis of binary distribution, determining the presence or absence of digital watermark data according to the probability, and reconstituting digital watermark data. Another method includes the steps of performing soft decision in code theory by assigning weights to the digital watermark sequence with a weighting function, and reconstituting digital watermark data.

    摘要翻译： 一种用于将数字水印数据嵌入数字数据内容的方法包括以下步骤：获得数字数据内容的块数据的频率系数，获得块数据的复杂度，从复杂度获得频率系数的变换量和数字 水印数据，并通过变换频率系数嵌入数字水印数据。 此外，读取数字水印数据的方法包括以下步骤：通过使用基于二进制分布的测试方法来计算读取比特序列中的“1”或“0”的概率，确定是否存在数字 水印数据根据概率，并重构数字水印数据。 另一种方法包括以下步骤：通过对具有加权函数的数字水印序列赋予权重，并重构数字水印数据，在代码理论中进行软判决。