公开(公告)号：US5225499A

公开(公告)日：1993-07-06

申请号：US662942

申请日：1991-03-01

申请人： Hiroyoshi Kokaku ,  Masatsugu Ogata ,  Masanori Segawa ,  Hiroshi Hozoji ,  Akio Nishikawa ,  Fumio Sato

发明人： Hiroyoshi Kokaku ,  Masatsugu Ogata ,  Masanori Segawa ,  Hiroshi Hozoji ,  Akio Nishikawa ,  Fumio Sato

IPC分类号： C08G59/00 ,  C08G59/40 ,  C08G59/62 ,  C08L63/00 ,  H01B3/40 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L23/293 ,  C08G59/4042 ,  C08L63/00 ,  H01B3/40 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/8592 ,  H01L24/45 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025

摘要： A resin composition having superior molding character, bonding character, moisture resistance, and heat resistance, for encapsulating of a semiconductor which contains:(a) An ether imide group compound represented by the general formula (I) ##STR1## wherein, each of R.sup.1 -R.sup.4, R.sup.8 and R.sup.8 is hydrogen, lower alkyl group, lower alkoxy group, lower fluoroalkyl group, chlorine or bromine, and R.sup.1 -R.sup.4, R.sup.7 and R.sup.8 may be same or different each other, and each of R.sup.5 and R.sup.6 is hydrogen, methyl group, ethyl group, trifluoromethyl group or trichloromethyl group, and R.sup.5 and R.sup.6 may be same or different each other, and D is a hydrocarbon group of a dicarboxylic acid having an ethylene type unsaturated double bond of an extract of the compound obtained by extraction with water in an amount 10 times by weight of the compound at 120.degree. C. for more than 100 hours has electric conductivity of at most 300 s/cm ph of 1.5-7; and(b) an epoxy resin as well as a semiconductor apparatus encapsulated with the resin.

摘要翻译： 一种具有优异的成型特性，结合特性，耐湿性和耐热性的树脂组合物，其用于包封半导体，其包含：（a）由通式（I）表示的醚酰亚胺基化合物其中， R 1 -R 4，R 8和R 8各自为氢，低级烷基，低级烷氧基，低级氟代烷基，氯或溴，R 1 -R 4，R 7和R 8可以相同或不同，R 5和R 6 是氢，甲基，乙基，三氟甲基或三氯甲基，R 5和R 6可以相同或不同，并且D是化合物的提取物的乙烯型不饱和双键的二羧酸的烃基 通过在120℃下将化合物的10倍量的水萃取超过100小时获得的电导率为至多300s / cm ph的1.5-7; 和（b）环氧树脂以及用该树脂封装的半导体装置。

公开(公告)号：US6124629A

公开(公告)日：2000-09-26

申请号：US168097

申请日：1998-10-08

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/31 ,  H01L23/495 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34

CPC分类号： H01L24/32 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/05 ,  H01L24/06 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/06136 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/73215 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421 ,  Y10T29/49121

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

摘要翻译： 由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。 鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。 在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小 杂散容量，提高信号传输速率和减少电气噪声。

公开(公告)号：US6100115A

公开(公告)日：2000-08-08

申请号：US166121

申请日：1998-10-05

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/31 ,  H01L23/495 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34

CPC分类号： H01L24/32 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/05 ,  H01L24/06 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/06136 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/73215 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421 ,  Y10T29/49121

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US06531760B1

公开(公告)日：2003-03-11

申请号：US09558105

申请日：2000-04-25

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

IPC分类号： H01L23495

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/0695 ,  H01L2224/85399

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US6072231A

公开(公告)日：2000-06-06

申请号：US066877

申请日：1998-04-28

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

IPC分类号： H01L21/52 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US5914530A

公开(公告)日：1999-06-22

申请号：US52981

申请日：1998-04-01

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

IPC分类号： H01L21/52 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US5612569A

公开(公告)日：1997-03-18

申请号：US464131

申请日：1995-06-05

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/31 ,  H01L23/495 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/32 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/05 ,  H01L24/06 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/06136 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/73215 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421 ,  Y10T29/49121

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

摘要翻译： 由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。 鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。 在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小 杂散容量，提高信号传输速率和减少电气噪声。

公开(公告)号：US06303982B2

公开(公告)日：2001-10-16

申请号：US09771617

申请日：2001-01-30

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

IPC分类号： H01L23495

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/0695 ,  H01L2224/85399

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the “Lead-On-Chip” or “Chip-On-Lead” structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

公开(公告)号：US6100580A

公开(公告)日：2000-08-08

申请号：US167736

申请日：1998-10-07

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjo ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsuro Matsumoto

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/31 ,  H01L23/495 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34

CPC分类号： H01L24/32 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/05 ,  H01L24/06 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/06136 ,  H01L2224/16 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/73215 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421 ,  Y10T29/49121

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

摘要翻译： 由于半导体芯片尺寸大，高集成度和加速度，所以难以将半导体芯片与包装中的引线组合在一起。 鉴于这种困难，已经采用称为半导体和引线堆叠和封装的称为“片上引线”或“引线芯片”结构的封装结构。 在该结构的封装中，根据本发明，内引线和半导体芯片的前端部之间的间隙比除引导端部和半导体芯片之外的内引线部分之间的间隙宽，从而减小 杂散容量，提高信号传输速率和减少电气噪声。

公开(公告)号：US5981315A

公开(公告)日：1999-11-09

申请号：US166532

申请日：1998-10-06

申请人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

发明人： Gen Murakami ,  Kunihiro Tsubosaki ,  Masahiro Ichitani ,  Kunihiko Nishi ,  Ichiro Anjoh ,  Asao Nishimura ,  Makoto Kitano ,  Akihiro Yaguchi ,  Sueo Kawai ,  Masatsugu Ogata ,  Syuuji Eguchi ,  Hiroyoshi Kokaku ,  Masanori Segawa ,  Hiroshi Hozoji ,  Takashi Yokoyama ,  Noriyuki Kinjo ,  Aizo Kaneda ,  Junichi Saeki ,  Shozo Nakamura ,  Akio Hasebe ,  Hiroshi Kikuchi ,  Isamu Yoshida ,  Takashi Yamazaki ,  Kazuyoshi Oshima ,  Tetsurou Matsumoto

IPC分类号： H01L21/52 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L29/06 ,  H05K1/14 ,  H05K1/18 ,  H05K3/34 ,  H01L21/44

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49555 ,  H01L23/49558 ,  H01L23/49568 ,  H01L23/49586 ,  H01L24/32 ,  H01L24/49 ,  H01L25/105 ,  H01L29/0657 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/48799 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2224/8592 ,  H01L2224/92147 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/107 ,  H01L2225/1088 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01043 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/3511 ,  H05K1/144 ,  H05K1/181 ,  H05K3/3421

摘要： As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.