Abstract:
An electronic device includes a semiconductor die, a die attach pad, an adhesive, a conductive lead, and a package structure, where the semiconductor die has opposite first and second sides, a conductive terminal on the second side, and an electrical isolation coating layer that extends on the first side, the adhesive adheres the first side of the semiconductor die to the die attach pad, the conductive lead is electrically coupled to the conductive terminal of the semiconductor die, and the package structure encloses at least a portion of the semiconductor die.
Abstract:
Provided is a cured film of high elongation, low stress, and high adhesion to metal copper. The cured film is formed by curing a photosensitive resin composition, wherein the photosensitive resin comprises a polyhydroxyamide, and wherein the rate of ring-closure of the polyhydroxyamide in the cured film is not more than 10%.
Abstract:
An anisotropic conductive film composition, an anisotropic conductive film prepared using the same, and a connection structure using the same, the anisotropic conductive film including a binder resin; a curable alicyclic epoxy compound; a curable oxetane compound; a quaternary ammonium catalyst; and conductive particles, wherein the anisotropic conductive film has a heat quantity variation rate of about 15% or less, as measured by differential scanning calorimetry (DSC) and calculated by Equation 1: Heat quantity variation rate (%)=[(H0−H1)/H0]×100 Equation 1 wherein H0 is a DSC heat quantity of the anisotropic conductive film, as measured at 25° C. and a time point of 0 hr, and H1 is a DSC heat quantity of the anisotropic conductive film, as measured after being left at 40° C. for 24 hours.
Abstract:
An assembly comprises: at least one element that is capable of transmitting heat; at least one electrically insulating substrate comprising at least one film of a polymer that is a good thermal conductor and electrical insulator; at least one sintered metal joint that is in contact with the polymer film; a main radiator; the radiator being in direct contact, or in contact via a sintered joint, with the substrate.
Abstract:
A leadless integrated circuit (IC) package comprising an IC chip mounted on a die attach pad and a plurality of electrical contacts electrically connected to the IC chip. The IC chip, the electrical contacts, and the die attach pad are all covered with a molding material, with portions of the electrical contacts and die attach pad protruding from a bottom surface of the molding material.
Abstract:
A leadless integrated circuit (IC) package comprising an IC chip mounted on a die attach pad and a plurality of electrical contacts electrically connected to the IC chip. The IC chip, the electrical contacts, and the die attach pad are all covered with a molding material, with portions of the electrical contacts and die attach pad protruding from a bottom surface of the molding material.
Abstract:
A semiconductor device capable of realizing highly reliable three-dimensional mounting, and a method of manufacturing the same, are provided. A projected electrode 9 is formed in a region outside of an element mounting region of a substrate 5. The projected electrode 9 includes a protruding portion that protrudes from the front face of a molding resin portion 10. The distal end of the protruding portion is a flat face 13. In addition, a portion of the projected electrode 9 whose cross section is larger than the protruding portion is positioned inside the molding resin portion 10.
Abstract:
The invention involves mounting a solder resin composition (6) including a solder powder (5a) and a resin (4) on the first electronic component (2); arranging such that the connecting terminals (3) of the first electronic component (2) and the electrode terminals (7) of the second electronic component (8) are facing each other; ejecting a gas (9a) from a gas generation source (1) included in the first electronic component (2) by heating the first electronic component (2) and the solder resin composition; and inducing the flow of the solder powder (5a) in the solder resin composition (6) by inducing convection of the gas (9a) in the solder resin composition (6), and electrically connecting the connecting terminals (3) and the electrode terminals (7) by self-assembly on the connecting terminals (3) and the electrode terminals (7). Through this are provided a flip chip packaging method that enables connecting, with high connection reliability, electrode terminals of a semiconductor chip wired with narrow pitch and connecting terminals of a circuit board, and a bump formation method for packaging on a circuit board.
Abstract:
A semiconductor device comprising a semiconductor pellet mounted on a pellet mounting area of the main surface of a base substrate, in which first electrode pads arranged on the back of the base substrate are electrically connected to bonding pads arranged on the main surface of the semiconductor pellet. The base substrate is formed of a rigid substrate, and its first electrode pads are electrically connected to the second electrode pads arranged on its reverse side. The semiconductor pellet is mounted on the pellet mounting area of the main surface of the base substrate, with its main surface downward, and its bonding pads are connected electrically with the second electrode pads of the base substrate through bonding wires passing through slits formed in the base substrate.
Abstract:
A semiconductor device comprising a semiconductor pellet mounted on a pellet mounting area of the main surface of a base substrate, in which first electrode pads arranged on the back of the base substrate are electrically connected to bonding pads arranged on the main surface of the semiconductor pellet. The base substrate is formed of a rigid substrate, and its first electrode pads are electrically connected to the second electrode pads arranged on its reverse side. The semiconductor pellet is mounted on the pellet mounting area of the main surface of the base substrate, with its main surface downward, and its bonding pads are connected electrically with the second electrode pads of the base substrate through bonding wires passing through slits formed in the base substrate.