公开(公告)号：US09349750B2

公开(公告)日：2016-05-24

申请号：US14077390

申请日：2013-11-12

申请人： Hiroyuki Miyake ,  Shunpei Yamazaki ,  Yoshifumi Tanada ,  Manabu Sato ,  Toshinari Sasaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Takuya Matsuo ,  Hiroshi Matsukizono ,  Yosuke Kanzaki ,  Shigeyasu Mori

发明人： Hiroyuki Miyake ,  Shunpei Yamazaki ,  Yoshifumi Tanada ,  Manabu Sato ,  Toshinari Sasaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Takuya Matsuo ,  Hiroshi Matsukizono ,  Yosuke Kanzaki ,  Shigeyasu Mori

IPC分类号： H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L29/78648

摘要： A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

摘要翻译： 半导体器件包括：晶体管，包括栅极电极，栅极上的栅极绝缘膜，栅极绝缘膜上的半导体层，以及半导体层上的源极和漏极; 包括晶体管上的无机材料的第一绝缘膜; 包括在所述第一绝缘膜上的有机材料的第二绝缘膜; 在所述第二绝缘膜上并且在与所述半导体层重叠的区域中的第一导电膜; 在所述第一导电膜上包括无机材料的第三绝缘膜; 以及在所述第三绝缘膜上并且在与所述第一导电膜重叠的区域中的第二导电膜。 施加到第一导电膜的第一电位的绝对值大于施加到第二导电膜的第二电位的绝对值。

公开(公告)号：US08847233B2

公开(公告)日：2014-09-30

申请号：US13463092

申请日：2012-05-03

申请人： Atsuo Isobe ,  Toshinari Sasaki ,  Junichi Koezuka ,  Shunpei Yamazaki

发明人： Atsuo Isobe ,  Toshinari Sasaki ,  Junichi Koezuka ,  Shunpei Yamazaki

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  H01L27/108 ,  H01L21/84 ,  H01L49/02 ,  H01L21/425 ,  H01L29/66 ,  H01L29/786 ,  H01L27/115

CPC分类号： H01L29/4238 ,  H01L21/02565 ,  H01L21/265 ,  H01L21/425 ,  H01L21/84 ,  H01L27/1085 ,  H01L27/10876 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1225 ,  H01L28/40 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78693

摘要： It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method thereof. A trench is formed in an insulating layer and impurities are added to an oxide semiconductor film in contact with an upper end corner portion of the trench, whereby a source region and a drain region are formed. With the above structure, miniaturization can be achieved. Further, with the trench, a short-channel effect can be suppressed setting the depth of the trench as appropriate even when a distance between a source electrode layer and a drain electrode layer is shortened.

摘要翻译： 本发明的目的是提供一种抑制短路效应并实现小型化的半导体器件及其制造方法。 在绝缘层中形成沟槽，并且将杂质添加到与沟槽的上端角部接触的氧化物半导体膜，由此形成源极区域和漏极区域。 利用上述结构，可以实现小型化。 此外，利用沟槽，即使当源电极层和漏电极层之间的距离缩短时，也可以适当地抑制沟槽的深度适当地设定短沟道效应。

公开(公告)号：US08884297B2

公开(公告)日：2014-11-11

申请号：US13696865

申请日：2011-05-06

申请人： Sachiaki Tezuka ,  Yasuhiro Jinbo ,  Toshinari Sasaki ,  Hidekazu Miyairi ,  Yosuke Kanzaki ,  Masao Moriguchi

发明人： Sachiaki Tezuka ,  Yasuhiro Jinbo ,  Toshinari Sasaki ,  Hidekazu Miyairi ,  Yosuke Kanzaki ,  Masao Moriguchi

IPC分类号： H01L21/336 ,  H01L21/205 ,  H01L29/04 ,  H01L29/786 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/24 ,  H01L29/66

CPC分类号： H01L21/02513 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/50 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： A manufacturing method of a microcrystalline silicon film includes the steps of forming a first microcrystalline silicon film over an insulating film by a plasma CVD method under a first condition; and forming a second microcrystalline silicon film over the first microcrystalline silicon film under a second condition. As a source gas supplied to a treatment chamber, a deposition gas containing silicon and a gas containing hydrogen are used. In the first condition, a flow rate of hydrogen is set at a flow rate 50 to 1000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 67 to 1333 Pa inclusive. In the second condition, a flow rate of hydrogen is set at a flow rate 100 to 2000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 1333 to 13332 Pa inclusive.

摘要翻译： 微晶硅膜的制造方法包括以下步骤：在第一条件下通过等离子体CVD法在绝缘膜上形成第一微晶硅膜; 以及在第二条件下在所述第一微晶硅膜上形成第二微晶硅膜。 作为供给到处理室的源气体，使用含有硅和含氢气体的沉积气体。 在第一条件下，将氢的流量设定为包含沉积气体的流量的50〜1000倍，处理室内的压力为67〜1333Pa。 在第二条件下，将氢的流量设定为包含沉积气体的流量的100〜2000倍，处理室内的压力为1333〜13332Pa。

公开(公告)号：US20130056742A1

公开(公告)日：2013-03-07

申请号：US13696865

申请日：2011-05-06

申请人： Sachiaki Tezuka ,  Yasuhiro Jinbo ,  Toshinari Sasaki ,  Hidekazu Miyairi ,  Yosuke Kanzaki ,  Masao Moriguchi

发明人： Sachiaki Tezuka ,  Yasuhiro Jinbo ,  Toshinari Sasaki ,  Hidekazu Miyairi ,  Yosuke Kanzaki ,  Masao Moriguchi

IPC分类号： H01L29/786 ,  H01L29/04 ,  H01L21/205 ,  H01L21/336

CPC分类号： H01L21/02513 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/50 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： A manufacturing method of a microcrystalline silicon film includes the steps of forming a first microcrystalline silicon film over an insulating film by a plasma CVD method under a first condition; and forming a second microcrystalline silicon film over the first microcrystalline silicon film under a second condition. As a source gas supplied to a treatment chamber, a deposition gas containing silicon and a gas containing hydrogen are used. In the first condition, a flow rate of hydrogen is set at a flow rate 50 to 1000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 67 to 1333 Pa inclusive. In the second condition, a flow rate of hydrogen is set at a flow rate 100 to 2000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 1333 to 13332 Pa inclusive.

摘要翻译： 微晶硅膜的制造方法包括以下步骤：在第一条件下通过等离子体CVD法在绝缘膜上形成第一微晶硅膜; 以及在第二条件下在所述第一微晶硅膜上形成第二微晶硅膜。 作为供给到处理室的源气体，使用含有硅和含氢气体的沉积气体。 在第一条件下，将氢的流量设定为包含沉积气体的流量的50〜1000倍，处理室内的压力为67〜1333Pa。 在第二条件下，将氢的流量设定为包含沉积气体的流量的100〜2000倍，处理室内的压力为1333〜13332Pa。

公开(公告)号：US08629432B2

公开(公告)日：2014-01-14

申请号：US12683681

申请日：2010-01-07

申请人： Junichiro Sakata ,  Takashi Shimazu ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

发明人： Junichiro Sakata ,  Takashi Shimazu ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L21/36

CPC分类号： H01L29/78696 ,  C23C14/086 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02592 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693 ,  H04M1/0266

摘要： A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability. Film deposition is performed using an oxide semiconductor target containing an insulator (an insulating oxide, an insulating nitride, silicon oxynitride, aluminum oxynitride, or the like), typically SiO2, so that the semiconductor device in which the Si-element concentration in the thickness direction of the oxide semiconductor layer has a gradient which increases in accordance with an increase in a distance from a gate electrode is realized.

公开(公告)号：US08389326B2

公开(公告)日：2013-03-05

申请号：US13495432

申请日：2012-06-13

申请人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

发明人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L21/477 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/383 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.

公开(公告)号：US08207014B2

公开(公告)日：2012-06-26

申请号：US12826021

申请日：2010-06-29

申请人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

发明人： Toshinari Sasaki ,  Junichiro Sakata ,  Hiroki Ohara ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L21/477 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/383 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.

摘要翻译： 本发明的目的是制造具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括使用氧化物半导体膜用于包括沟道形成区域的半导体层的薄膜晶体管的半导体器件的制造方法中，进行热处理（脱水或脱氢）以提高氧化物半导体膜的纯度 并减少杂质，包括水分等。 之后，在氧气氛下进行缓慢冷却。 除了在氧化物半导体膜中排出的含有水分等的杂质以外，热处理会导致在栅极绝缘层中退出的杂质，包括氧化物半导体膜和膜之间的界面中的杂质，氧化物半导体膜和氧化物之间和之下的界面 半导体并与其接触。

公开(公告)号：US09425045B2

公开(公告)日：2016-08-23

申请号：US13107283

申请日：2011-05-13

申请人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Kosei Noda

发明人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Kosei Noda

IPC分类号： H01L21/02 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/385 ,  H01L27/1225 ,  H01L29/7869

摘要： It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. An oxide semiconductor film serving as a channel formation region of a transistor is formed by a sputtering method at a temperature higher than 200° C., so that the number of water molecules eliminated from the oxide semiconductor film can be 0.5/nm3 or less according to thermal desorption spectroscopy. A substance including a hydrogen atom such as hydrogen, water, a hydroxyl group, or hydride which causes variation in the electric characteristics of a transistor including an oxide semiconductor is prevented from entering the oxide semiconductor film, whereby the oxide semiconductor film can be highly purified and made to be an electrically i-type (intrinsic) semiconductor.

摘要翻译： 本发明的目的是提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。 通过溅射法在高于200℃的温度下形成用作晶体管的沟道形成区的氧化物半导体膜，从氧化物半导体膜中除去的水分子数可以为0.5nm / nm 3以下 到热解吸光谱。 包含氢原子的物质，例如氢，水，羟基或氢化物，其导致包括氧化物半导体的晶体管的电特性发生变化，从而防止氧化物半导体膜进入氧化物半导体膜，由此氧化物半导体膜可以被高度纯化 并制成电i型（本征）半导体。

公开(公告)号：US08900916B2

公开(公告)日：2014-12-02

申请号：US12832329

申请日：2010-07-08

申请人： Shunpei Yamazaki ,  Miyuki Hosoba ,  Kosei Noda ,  Hiroki Ohara ,  Toshinari Sasaki ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Miyuki Hosoba ,  Kosei Noda ,  Hiroki Ohara ,  Toshinari Sasaki ,  Junichiro Sakata

IPC分类号： H01L21/00

CPC分类号： H01L29/66969 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/7869

摘要： A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

摘要翻译： 一种高度可靠的半导体器件及其制造方法，其包括具有稳定电特性的薄膜晶体管。 在包括具有沟道形成区域的半导体层是氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，减少诸如水分的杂质的热处理以提高氧化物半导体层的纯度并氧化氧化物 进行半导体层（脱水或脱氢的热处理）。 氧化物半导体层中的水分等杂质，以及存在于栅极绝缘层中的杂质都会降低，氧化物半导体层和氧化物半导体层之间的界面中存在的水分等杂质与氧化物半导体层 减少了

公开(公告)号：US08450144B2

公开(公告)日：2013-05-28

申请号：US12722795

申请日：2010-03-12

申请人： Junichiro Sakata ,  Hideyuki Kishida ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

发明人： Junichiro Sakata ,  Hideyuki Kishida ,  Hiroki Ohara ,  Toshinari Sasaki ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  G09G3/3258 ,  G09G3/3275 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0248 ,  G09G2310/0297 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/66969 ,  H01L29/78618

摘要： An object of an embodiment of the present invention is to provide a semiconductor device provided with a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor layer including silicon oxide, an insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain regions between the oxide semiconductor layer including silicon oxide and source and drain electrode layers. The source and drain regions are formed using a degenerate oxide semiconductor material or a degenerate oxynitride material.

摘要翻译： 本发明的一个实施例的目的是提供一种具有薄膜晶体管的半导体器件，该薄膜晶体管包括氧化物半导体层并具有高电特性。 半导体器件包括绝缘表面上的栅电极，包括氧化硅的氧化物半导体层，栅电极和氧化物半导体层之间的绝缘层，以及包括氧化硅的氧化物半导体层和源极和漏极之间的源极和漏极区 电极层。 源区和漏区使用简并氧化物半导体材料或简并氧氮化物材料形成。