公开(公告)号：US4737684A

公开(公告)日：1988-04-12

申请号：US828020

申请日：1986-02-10

申请人： Hiroyuki Seto ,  Katsuhiko Tanaka

发明人： Hiroyuki Seto ,  Katsuhiko Tanaka

IPC分类号： H05B33/14 ,  H05B33/22 ,  H05B33/28 ,  H05B33/26

CPC分类号： H05B33/145 ,  H05B33/22 ,  H05B33/28

摘要： A thin film EL element comprises a substrate, an electrode formed on the substrate, a ZnO insulation layer which is formed on the electrode and which has crystalline orientability, a light emitting layer formed on the ZnO insulation layer having crystallinity, and a second electrode formed on the light emitting layer. The ZnO insulation layer having crystalline orientability, is formed as a sublayer for the light emitting layer, and is made of a material having its c-axis oriented perpendicular to the substrate.

摘要翻译： 薄膜EL元件包括基板，形成在基板上的电极，形成在电极上并且具有结晶取向性的ZnO绝缘层，形成在具有结晶性的ZnO绝缘层上的发光层和形成的第二电极 在发光层上。 具有结晶取向性的ZnO绝缘层形成为发光层的子层，并且由其c轴垂直于基板取向的材料制成。

公开(公告)号：US4691104A

公开(公告)日：1987-09-01

申请号：US743950

申请日：1985-06-12

申请人： Michihiro Murata ,  Katsuhiko Tanaka ,  Hiroyuki Seto

发明人： Michihiro Murata ,  Katsuhiko Tanaka ,  Hiroyuki Seto

IPC分类号： G01J1/02 ,  G01J5/34 ,  H01L27/16 ,  H01L37/02 ,  G01J5/10

CPC分类号： H01L37/02 ,  G01J5/34 ,  H01L27/16

摘要： A one-dimensional pyroelectric sensor array comprises (1) a base plate made of a pyroelectric material; a plurality of strip elements made of pyroelectric material having a heat-sensitive region at a free end thereof, each supported only at the other end to the base plate to form an integrated structure with the base plate; and (2) one pair of detecting electrodes formed on the heat-sensitive region of the free end of each strip element.

摘要翻译： 一维热电传感器阵列包括（1）由热电材料制成的基板; 多个由热电材料制成的带状元件，其自由端具有热敏区域，每个仅在另一端支撑在基板上以与基板形成一体的结构; 和（2）形成在每个带状元件的自由端的热敏区域上的一对检测电极。

公开(公告)号：US06835635B2

公开(公告)日：2004-12-28

申请号：US10316210

申请日：2002-12-10

申请人： Hiroyuki Seto ,  Makoto Inai ,  Hiroyuki Nakano ,  Eiji Tai

发明人： Hiroyuki Seto ,  Makoto Inai ,  Hiroyuki Nakano ,  Eiji Tai

IPC分类号： H01L2128

CPC分类号： H01L29/66863 ,  H01L21/0272 ,  H01L21/28587

摘要： A gate electrode is formed in the following manner. A first resist layer having a first opening is formed on a semiconductor substrate. A second resist layer having a second opening larger than the first opening is formed on the first resist layer. A first conductor layer containing a high-melting-point metal is formed. Subsequently, a second conductor layer containing low-resistance metal is formed, and then the first conductor layer within the second opening is removed by etching. Next, the second resist layer is removed by a lift-off process, and finally the first resist layer is removed by ashing.

摘要翻译： 以下列方式形成栅电极。 在半导体衬底上形成具有第一开口的第一抗蚀剂层。 在第一抗蚀剂层上形成具有大于第一开口的第二开口的第二抗蚀剂层。 形成含有高熔点金属的第一导体层。 随后，形成含有低电阻金属的第二导体层，然后通过蚀刻去除第二开口内的第一导体层。 接下来，通过剥离处理去除第二抗蚀剂层，最后通过灰化除去第一抗蚀剂层。

公开(公告)号：US08840136B2

公开(公告)日：2014-09-23

申请号：US13818436

申请日：2012-08-08

申请人： Toshikatsu Masatsugu ,  Hiroyuki Seto ,  Takahiro Narikiyo

发明人： Toshikatsu Masatsugu ,  Hiroyuki Seto ,  Takahiro Narikiyo

IPC分类号： B60R21/213 ,  B60R13/02 ,  B60N3/02 ,  B60R21/215

CPC分类号： B60R21/213 ,  B60N3/026 ,  B60R13/025 ,  B60R2021/21518

摘要： A front pillar trim mounting structure has a front pillar (10), a front pillar trim (30), an airbag (60), and an assist grip (70). The front pillar is provided in the front portion of a vehicle. The front pillar trim (30) covers the front pillar (10) from the inner side of the vehicle. The airbag (60) is located between the front pillar (10) and the front pillar trim (30). The assist grip (70) is attached to the front pillar (10), and is installed on a vehicle inner surface of the front pillar trim (30). The front pillar trim (30) has a first front pillar trim (40), a second front pillar trim (50), and an engagement mechanism (54). The assist grip (70) is installed on the first front pillar trim (40). The second front pillar trim (50) is provided with an opening where the first front pillar trim (40) is installed. The engagement mechanism (54) detachably connects the second front pillar trim (50) to first front pillar trim (40). The engagement mechanism (54) is configured to allow the second front pillar trim (50) to move with respect to the front pillar (10) by releasing the second front pillar trim (50) by an expansion pressure of the airbag (60) at a time of inflation of the airbag (60), so that a gap for deployment of the airbag (60) is formed between the second front pillar trim (50) and the front pillar (10).

摘要翻译： 前柱装饰安装结构具有前支柱（10），前柱装饰件（30），气囊（60）和辅助把手（70）。 前支柱设置在车辆的前部。 前支柱装饰件（30）从车辆内侧覆盖前支柱（10）。 气囊（60）位于前支柱（10）和前柱装饰件（30）之间。 辅助把手（70）附接到前支柱（10），并安装在前柱装饰件（30）的车辆内表面上。 前柱装饰件（30）具有第一前柱装饰件（40），第二前柱装饰件（50）和接合机构（54）。 辅助把手（70）安装在第一前柱装饰件（40）上。 第二前柱装饰件（50）设置有第一前柱装饰件（40）安装的开口。 接合机构（54）将第二前柱装饰件（50）可拆卸地连接到第一前柱装饰件（40）。 接合机构（54）构造成允许第二前柱装饰件（50）相对于前柱（10）移动，通过在气囊（60）的膨胀压力下释放第二前柱装饰件（50） 安全气囊（60）的膨胀时间，使得在第二前柱装饰件（50）和前支柱（10）之间形成用于展开安全气囊（60）的间隙。

公开(公告)号：US6008509A

公开(公告)日：1999-12-28

申请号：US998248

申请日：1997-12-24

申请人： Makoto Inai ,  Hiroyuki Seto ,  Fujio Okui ,  Susumu Fukuda ,  Hisashi Ariyoshi

发明人： Makoto Inai ,  Hiroyuki Seto ,  Fujio Okui ,  Susumu Fukuda ,  Hisashi Ariyoshi

IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/778 ,  H01L29/80 ,  H01L29/772

CPC分类号： H01L29/802

摘要： A heterostructure insulated-gate field effect transistor comprises a channel layer, barrier layer and a contact layer. The barrier layer is made of a material having an electron affinity smaller than that of the channel layer and equal to that of the contact layer. Due to the single heterostructure, the series resistance between the channel layer and the source (drain) electrode can be decreased without employing complicated selective ion implanting or selective epitaxial growing method.

摘要翻译： 异质结构绝缘栅场效应晶体管包括沟道层，势垒层和接触层。 阻挡层由电子亲和力小于沟道层的电子亲和力的材料制成，并且等于接触层的电子亲和力。 由于单异质结构，可以减少沟道层和源极（漏极）之间的串联电阻，而不需要采用复杂的选择性离子注入或选择性外延生长法。

公开(公告)号：US20140110963A1

公开(公告)日：2014-04-24

申请号：US13825164

申请日：2012-07-03

申请人： Atsushi Kuroda ,  Hiroyuki Seto

发明人： Atsushi Kuroda ,  Hiroyuki Seto

IPC分类号： B60R13/08

CPC分类号： B60R13/08 ,  B32B5/022 ,  B32B5/026 ,  B32B5/18 ,  B32B7/12 ,  B32B27/065 ,  B32B27/12 ,  B32B27/32 ,  B32B27/40 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2262/101 ,  B32B2266/0278 ,  B32B2307/102 ,  B32B2307/718 ,  B32B2307/72 ,  B32B2605/00 ,  B60R5/044

摘要： In a vehicle package tray (100) disposed in the back of a rear seat of a vehicle, a sheet-shaped glass fiber mats (108), in which urethane resin (110) is impregnated, are overlapped on both surfaces of a semi-hard urethane foam layer (102), a front surface material (104) is overlapped on the surface of one glass fiber mat (108), in which the urethane resin (110) is impregnated, via a first adhesive film (106), back material (114) is overlapped on the surface of the other glass fiber mat (108), in which the urethane resin (110) is impregnated, via a second adhesive film (112), and the multi-overlapped object obtains a sound absorbing performance by being formed into a three-dimensional shape by being pinched and fixed by a press die, heated, pressurized, and thereby fused.

摘要翻译： 在设置在车辆后座的后方的车辆用包装托盘（100）中，浸渍有聚氨酯树脂（110）的片状玻璃纤维垫（108）重叠在半圆形状的两面上， 硬质聚氨酯泡沫层（102），前表面材料（104）经由第一粘合膜（106）重叠在一个玻璃纤维垫（108）的表面上，其中浸渍有聚氨酯树脂（110） 材料（114）通过第二粘合膜（112）重叠在浸渍有聚氨酯树脂（110）的另一玻璃纤维垫（108）的表面上，并且多重重叠物体获得吸音性能 通过由压模挤压固定而形成三维形状，加热，加压，从而熔融。

公开(公告)号：US06388310B1

公开(公告)日：2002-05-14

申请号：US08921199

申请日：1997-08-27

申请人： Hiroyuki Seto ,  Shogo Yoshida

发明人： Hiroyuki Seto ,  Shogo Yoshida

IPC分类号： H01L2358

CPC分类号： H01L23/3192 ,  H01L23/291 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/13063 ,  H01L2924/1423 ,  H01L2924/19041 ,  H01L2924/00

摘要： The invention provides a semiconductor device with a passivation film provided on a surface thereof, said passivation film comprising a SiON layer in contact with the surface of said semiconductor device, and a Si3N4 layer provided at the outer side of said SiON layer, chraracterized in that said passivation film has an outermost layer of Si3N4 and said outermost layer has a portion in contact with said semiconductor device or the exposed area of said SiON layer is nitrided. The semiconductor device has a high bonding strength between the passivation film and the semiconductor device and high moisture resistance.

摘要翻译： 本发明提供了一种在其表面上具有钝化膜的半导体器件，所述钝化膜包括与所述半导体器件的表面接触的SiON层，以及设置在所述SiON层的外侧的Si 3 N 4层，其特征在于 所述钝化膜具有最外层的Si 3 N 4，并且所述最外层具有与所述半导体器件接触的部分或所述SiON层的暴露区域被氮化。 半导体器件在钝化膜和半导体器件之间具有高的结合强度，并且具有高的耐湿性。

公开(公告)号：US5028756A

公开(公告)日：1991-07-02

申请号：US422650

申请日：1989-10-17

申请人： Shigeo Ezaki ,  Hiroyuki Seto ,  Hiroshi Hasegawa

发明人： Shigeo Ezaki ,  Hiroyuki Seto ,  Hiroshi Hasegawa

IPC分类号： B23H7/08

CPC分类号： B23H7/08

摘要： A tungsten alloy is used as a material of an electrode wire for electric spark cutting. The tungsten alloy comprises one or more elements selected from the group consisted of Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and oxides thereof. An electrode wire made of such a tungsten alloy handles an improved processing speed and the accuracy of the cut surface is also improved. The number of failures due to breaking of the electrode wire has been reduced and the tensile strength of the electrode wire has been increased. The same effect can be attained when a molybdenum alloy containing one or more oxides of elements selected from the group consisted of Al, Si and K is used as an alloying component in the alloy for making the electrode wire for electric spark cutting.

摘要翻译： 钨合金用作电火花切割用电极线材料。 钨合金含有选自Y，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu及其氧化物中的一种以上的元素。 由这种钨合金制成的电极线处理改进的处理速度，并且还提高了切割表面的精度。 由于电极线断裂导致的故障次数减少，电极线的拉伸强度增加。 当在用于电火花切割的电极线的合金中使用含有选自Al，Si和K的一种或多种选自Al，Si和K的元素的氧化物作为合金成分时，可以获得相同的效果。

公开(公告)号：US08827342B2

公开(公告)日：2014-09-09

申请号：US13825164

申请日：2012-07-03

申请人： Atsushi Kuroda ,  Hiroyuki Seto

发明人： Atsushi Kuroda ,  Hiroyuki Seto

IPC分类号： B60R7/04 ,  B60R5/04 ,  B60R13/08

CPC分类号： B60R13/08 ,  B32B5/022 ,  B32B5/026 ,  B32B5/18 ,  B32B7/12 ,  B32B27/065 ,  B32B27/12 ,  B32B27/32 ,  B32B27/40 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2262/101 ,  B32B2266/0278 ,  B32B2307/102 ,  B32B2307/718 ,  B32B2307/72 ,  B32B2605/00 ,  B60R5/044

摘要： In a vehicle package tray (100) disposed in the back of a rear seat of a vehicle, a sheet-shaped glass fiber mats (108), in which urethane resin (110) is impregnated, are overlapped on both surfaces of a semi-hard urethane foam layer (102), a front surface material (104) is overlapped on the surface of one glass fiber mat (108), in which the urethane resin (110) is impregnated, via a first adhesive film (106), back material (114) is overlapped on the surface of the other glass fiber mat (108), in which the urethane resin (110) is impregnated, via a second adhesive film (112), and the multi-overlapped object obtains a sound absorbing performance by being formed into a three-dimensional shape by being pinched and fixed by a press die, heated, pressurized, and thereby fused.

摘要翻译： 在设置在车辆后座的后方的车辆用包装托盘（100）中，浸渍有聚氨酯树脂（110）的片状玻璃纤维垫（108）重叠在半圆形状的两面上， 硬质聚氨酯泡沫层（102），前表面材料（104）经由第一粘合膜（106）重叠在一个玻璃纤维垫（108）的表面上，其中浸渍有聚氨酯树脂（110） 材料（114）通过第二粘合膜（112）重叠在浸渍有聚氨酯树脂（110）的另一玻璃纤维垫（108）的表面上，并且多重重叠物体获得吸音性能 通过由压模挤压固定而形成三维形状，加热，加压，从而熔融。

公开(公告)号：US07867636B2

公开(公告)日：2011-01-11

申请号：US11562561

申请日：2006-11-22

申请人： Osamu Nakagawara ,  Hiroyuki Seto ,  Yutaka Kishimoto

发明人： Osamu Nakagawara ,  Hiroyuki Seto ,  Yutaka Kishimoto

IPC分类号： H01B5/14

CPC分类号： C23C14/086 ,  C23C14/34 ,  Y10T428/31507

摘要： A ZnO-based transparent conductive film is produced by growing ZnO doped with a group III element oxide on a substrate and has a region with a crystal structure in which a c-axis grows along a plurality of different directions. The transparent conductive film produced by growing ZnO doped with a group III element oxide on a substrate has a ZnO (002) rocking curve full width at half maximum of about 13.5° or more. ZnO is doped with a group III element oxide so that the ratio of the group III element oxide in the transparent conductive film is about 7% to about 40% by weight. The transparent conductive film is formed on the substrate with a SiNx thin film provided therebetween. The transparent conductive film is formed on the substrate by a thin film formation method with a bias voltage applied to the substrate.

摘要翻译： 通过在衬底上生长掺杂有III族元素氧化物的ZnO并且具有其中c轴沿多个不同方向生长的晶体结构的区域来制造ZnO基透明导电膜。 通过在衬底上生长掺杂有III族元素氧化物的ZnO生长的透明导电膜具有半峰全宽为13.5°或更大的ZnO（002）摇摆曲线。 ZnO掺杂有III族元素氧化物，使得透明导电膜中III族元素氧化物的比例为约7％至约40％重量。 透明导电膜形成在衬底上，其间设置有SiNx薄膜。 透明导电膜通过薄膜形成方法在衬底上形成，其中偏置电压施加到衬底。