利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.02 秒)

    LIGHT-EMITTING DIODE
    1.
    发明申请
    LIGHT-EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20120104354A1

    公开(公告)日：2012-05-03

    申请号：US13283985

    申请日：2011-10-28

    申请人： Hiroyuki TANAKA ,  Nobuaki NAGAO ,  Takahiro HAMADA ,  Eiji FUJII

    发明人： Hiroyuki TANAKA ,  Nobuaki NAGAO ,  Takahiro HAMADA ,  Eiji FUJII

    IPC分类号： H01L33/04

    CPC分类号： H01L33/42 ,  H01L33/32

    摘要： A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.

    摘要翻译： 发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极 订购。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触，n型单晶ITO透明膜与n型单晶ZnO透明膜接触，p型 侧电极与n型单晶ZnO透明膜连接。 n型单晶ITO透明膜含有Ga，Ga /（In + Ga）的摩尔比不小于0.08且不大于0.5。 n型单晶ITO透明膜的厚度不小于1.1nm且不大于55nm。

    SOLAR CELL
    3.
    发明申请
    SOLAR CELL 有权
    太阳能电池

    公开(公告)号：US20120211073A1

    公开(公告)日：2012-08-23

    申请号：US13460525

    申请日：2012-04-30

    申请人： Nobuaki NAGAO ,  Takahiro HAMADA ,  Akio MATSUSHITA

    发明人： Nobuaki NAGAO ,  Takahiro HAMADA ,  Akio MATSUSHITA

    IPC分类号： H01L31/0264 ,  H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/1884 ,  H01L31/035281 ,  H01L31/0735 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1856 ,  Y02E10/544 ,  Y02P70/521

    摘要： A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode.

    摘要翻译： 制造太阳能电池的方法包括以下步骤：在石墨基板的表面上形成非晶碳层，AlN层和第一n型氮化物半导体层，在第一n上形成具有多个开口的掩模层 型氮化物半导体层; 在所述第一n型氮化物半导体层的由所述多个开口露出的部分上形成多个第二n型氮化物半导体层; 在所述多个第二n型氮化物半导体层上形成多个光吸收层; 在所述多个所述光吸收层上形成多个p侧氮化物半导体层; 形成p侧电极; 并形成n侧电极。

    SOLAR CELL AND METHOD FOR FABRICATING THE SAME
    5.
    发明申请
    SOLAR CELL AND METHOD FOR FABRICATING THE SAME 有权
    太阳能电池及其制造方法

    公开(公告)号：US20110203651A1

    公开(公告)日：2011-08-25

    申请号：US13097860

    申请日：2011-04-29

    申请人： Nobuaki NAGAO ,  Takahiro HAMADA ,  Akihiro ITOH

    发明人： Nobuaki NAGAO ,  Takahiro HAMADA ,  Akihiro ITOH

    IPC分类号： H01L31/06 ,  H01L31/0304

    CPC分类号： H01L31/0392 ,  C23C16/303 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L31/0693 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

    摘要： A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

    摘要翻译： 太阳能电池包括石墨基板，形成在石墨基板上的厚度不小于20nm且不大于60nm的非晶碳层，形成在非晶碳层上的AlN层，n型氮化物半导体层 形成在AlN层上; 包括形成在所述n型氮化物半导体层上的氮化物半导体层的光吸收层; 形成在所述光吸收层上的p型氮化物半导体层; 电连接到p型氮化物半导体层的p侧电极; 和与n型氮化物半导体层电连接的n侧电极。 无定形碳层通过氧化石墨基材的表面而获得。

    METHOD FOR PRODUCING OPTICAL FIBER PREFORM
    6.
    发明申请
    METHOD FOR PRODUCING OPTICAL FIBER PREFORM 有权
    生产光纤预制件的方法

    公开(公告)号：US20120000249A1

    公开(公告)日：2012-01-05

    申请号：US13229196

    申请日：2011-09-09

    申请人： Takahiro HAMADA

    发明人： Takahiro HAMADA

    IPC分类号： C03B37/014

    CPC分类号： C03B37/01446

    摘要： Provided is a method for producing an optical fiber preform including a dehydration step and a sintering step. In the dehydration step, a porous glass base material is provided to a furnace core tube of a dehydration-sintering furnace, and the porous glass base material is dehydrated using a dehydration agent added with an argon gas. In the sintering step, the porous glass base material dehydrated in the dehydration step is sintered. Further, in the dehydration step, a temperature of the porous glass base material begins to be increased in a condition such that a high heat conductivity gas, having a heat conductivity higher than a heat conductivity of the argon gas, is remaining inside the porous glass base material.

    摘要翻译： 提供一种用于制造包括脱水步骤和烧结步骤的光纤预制件的方法。 在脱水工序中，在脱水烧结炉的炉芯管上设置多孔玻璃基材，使用加入氩气的脱水剂使多孔玻璃基材脱水。 在烧结工序中，将在脱水工序中脱水的多孔玻璃基材烧结。 此外，在脱水工序中，多孔玻璃基材的温度开始增加，使得导热率高于氩气的导热率的高导热性气体保留在多孔玻璃内 基材。

    WEBBING TAKE-UP DEVICE
    7.
    发明申请
    WEBBING TAKE-UP DEVICE 有权

    公开(公告)号：US20110309180A1

    公开(公告)日：2011-12-22

    申请号：US13158712

    申请日：2011-06-13

    申请人： Nao SASAKI ,  Tomotaka SUZUKI ,  Takahiro HAMADA ,  Takahiro OSAKI

    发明人： Nao SASAKI ,  Tomotaka SUZUKI ,  Takahiro HAMADA ,  Takahiro OSAKI

    IPC分类号： B60R22/34 ,  B65H75/48

    CPC分类号： B60R22/3413 ,  B60R22/405 ,  B60R2022/287

    摘要： When attempt is made to insert a fitting-shaft section into a fitting-hole section in a state where phases of the fitting-shaft section of a spring-screw and the fitting-hole section of an adapter about a central-axis line of a spool-body are not matched, shaft-section-side inclined-surfaces formed at shaft-section-side protrusions abut to hole-section-side inclined-surfaces formed at hole-section-side protrusions, so the shaft-section-side inclined-surfaces press the hole-section-side inclined-surfaces in such a direction inclined in a pull-out direction to a projecting-direction of a shaft-section body from a flange section. The adapter having received a pressing force generated by this pressing at the hole-section-side inclined-surfaces has rotated in the pull-out direction, and then the phases of the fitting-hole section and the fitting-shaft section have aligned about the central-axis line of the spool-body, each shaft-section-side protrusion intrudes into a gap between the hole-section-side protrusions adjacent to each other, and the fitting-shaft section fits into the fitting-hole section.

    摘要翻译： 当试图将装配轴部分插入到装配孔部分中时，在弹簧螺杆的装配轴部分和适配器的装配孔部分的相位围绕中心轴线的相位 卷轴体不匹配，形成在轴部侧突起部的轴部侧倾斜面与形成在孔部侧突起部的孔部侧倾斜面抵接，轴部侧倾斜 表面沿着从拉出方向倾斜的方向将孔部侧倾斜面从凸缘部按压到轴部主体的突出方向。 接收到通过该按压在孔部侧倾斜面产生的按压力的适配器在拉出方向上旋转，接合孔部和嵌合轴部的相位在 卷轴体的中心轴线，每个轴部侧突起侵入相邻的孔部侧突起之间的间隙，嵌合轴部嵌入嵌合孔部。