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    SOLAR CELL AND METHOD FOR FABRICATING THE SAME
    2.
    发明申请
    SOLAR CELL AND METHOD FOR FABRICATING THE SAME 有权
    太阳能电池及其制造方法

    公开(公告)号：US20110203651A1

    公开(公告)日：2011-08-25

    申请号：US13097860

    申请日：2011-04-29

    申请人： Nobuaki NAGAO ,  Takahiro HAMADA ,  Akihiro ITOH

    发明人： Nobuaki NAGAO ,  Takahiro HAMADA ,  Akihiro ITOH

    IPC分类号： H01L31/06 ,  H01L31/0304

    CPC分类号： H01L31/0392 ,  C23C16/303 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02376 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L31/0693 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

    摘要： A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

    摘要翻译： 太阳能电池包括石墨基板，形成在石墨基板上的厚度不小于20nm且不大于60nm的非晶碳层，形成在非晶碳层上的AlN层，n型氮化物半导体层 形成在AlN层上; 包括形成在所述n型氮化物半导体层上的氮化物半导体层的光吸收层; 形成在所述光吸收层上的p型氮化物半导体层; 电连接到p型氮化物半导体层的p侧电极; 和与n型氮化物半导体层电连接的n侧电极。 无定形碳层通过氧化石墨基材的表面而获得。

    LIGHT-EMITTING DIODE
    3.
    发明申请
    LIGHT-EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20120104354A1

    公开(公告)日：2012-05-03

    申请号：US13283985

    申请日：2011-10-28

    申请人： Hiroyuki TANAKA ,  Nobuaki NAGAO ,  Takahiro HAMADA ,  Eiji FUJII

    发明人： Hiroyuki TANAKA ,  Nobuaki NAGAO ,  Takahiro HAMADA ,  Eiji FUJII

    IPC分类号： H01L33/04

    CPC分类号： H01L33/42 ,  H01L33/32

    摘要： A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.

    摘要翻译： 发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极 订购。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触，n型单晶ITO透明膜与n型单晶ZnO透明膜接触，p型 侧电极与n型单晶ZnO透明膜连接。 n型单晶ITO透明膜含有Ga，Ga /（In + Ga）的摩尔比不小于0.08且不大于0.5。 n型单晶ITO透明膜的厚度不小于1.1nm且不大于55nm。

    SOLAR CELL
    5.
    发明申请
    SOLAR CELL 有权
    太阳能电池

    公开(公告)号：US20120211073A1

    公开(公告)日：2012-08-23

    申请号：US13460525

    申请日：2012-04-30

    申请人： Nobuaki NAGAO ,  Takahiro HAMADA ,  Akio MATSUSHITA

    发明人： Nobuaki NAGAO ,  Takahiro HAMADA ,  Akio MATSUSHITA

    IPC分类号： H01L31/0264 ,  H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/1884 ,  H01L31/035281 ,  H01L31/0735 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1856 ,  Y02E10/544 ,  Y02P70/521

    摘要： A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode.

    摘要翻译： 制造太阳能电池的方法包括以下步骤：在石墨基板的表面上形成非晶碳层，AlN层和第一n型氮化物半导体层，在第一n上形成具有多个开口的掩模层 型氮化物半导体层; 在所述第一n型氮化物半导体层的由所述多个开口露出的部分上形成多个第二n型氮化物半导体层; 在所述多个第二n型氮化物半导体层上形成多个光吸收层; 在所述多个所述光吸收层上形成多个p侧氮化物半导体层; 形成p侧电极; 并形成n侧电极。

    ELECTRODE FOR LITHIUM SECONDARY BATTERY, LITHIUM SECONDARY BATTERY AND METHOD FOR PRODUCING THE SAME
    6.
    发明申请
    ELECTRODE FOR LITHIUM SECONDARY BATTERY, LITHIUM SECONDARY BATTERY AND METHOD FOR PRODUCING THE SAME 有权
    锂二次电池用电极，锂二次电池及其制造方法

    公开(公告)号：US20120027919A1

    公开(公告)日：2012-02-02

    申请号：US13248858

    申请日：2011-09-29

    申请人： Keiichi TAKAHASHI ,  Masaya UGAJI ,  Yasutaka KOGETSU ,  Shinji MINO ,  Nobuaki NAGAO ,  Masaki HASEGAWA

    发明人： Keiichi TAKAHASHI ,  Masaya UGAJI ,  Yasutaka KOGETSU ,  Shinji MINO ,  Nobuaki NAGAO ,  Masaki HASEGAWA

    IPC分类号： H01M4/04 ,  B05D1/36 ,  B05D3/00

    CPC分类号： H01M4/13 ,  H01M4/131 ,  H01M4/139 ,  H01M4/1391 ,  H01M4/505 ,  H01M4/525 ,  H01M10/052 ,  Y02T10/7011 ,  Y10T29/49108 ,  Y10T29/49115

    摘要： An electrode for a lithium secondary battery including a sheet-like current collector and an active material layer carried on the current collector. The active material layer is capable of absorbing and desorbing lithium, and the active material layer includes a plurality of columnar particles having at least one bend. An angle θ1 formed by a growth direction of the columnar particles from a bottom to a first bend of the columnar particles, and a direction normal to the current collector is preferably 10° or more and less than 90°. When θn+1 is an angle formed by a growth direction of the columnar particles from an n-th bend counted from a bottom of the columnar particles to an (n+1)-th bend, and the direction normal to the current collector, and n is an integer of 1 or more, θn+1 is preferably 0° or more and less than 90°.

    摘要翻译： 一种锂二次电池用电极，其包含片状集电体和在集电体上承载的活性物质层。 活性物质层能够吸收和解吸锂，并且活性物质层包括具有至少一个弯曲部分的多个柱状颗粒。 由柱状颗粒从柱状颗粒的底部到第一弯曲部的生长方向形成的角度θ和垂直于集电体的方向优选为10°以上且小于90°。 当n + 1是由从柱状颗粒的底部计数到第（n + 1）弯曲的第n个弯曲的柱状颗粒的生长方向和垂直于电流的方向形成的角度 并且n为1以上的整数，n + 1优选为0°以上且小于90°。