公开(公告)号：US20200068735A1

公开(公告)日：2020-02-27

申请号：US16671872

申请日：2019-11-01

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Tokihito SUWA ,  Yujiro KANEKO ,  Yusuke TAKAGI ,  Shinichi FUJINO ,  Takahiro SHIMURA

IPC: H05K5/02 ,  H05K7/20 ,  H02M7/537 ,  H01L23/00 ,  H01L23/495 ,  H01L23/473 ,  H05K7/14

Abstract: A semiconductor module includes a first power semiconductor element having a first surface and a second surface. The semiconductor module also includes a second power semiconductor element having a first surface and a second surface. The semiconductor module also includes first, second, third, and fourth conductor plates, and a connecting part. The connecting part is integrally formed with the second conductor plate, extends toward the third conductor plate, and is connected to the third conductor plate.

公开(公告)号：US20170162472A1

公开(公告)日：2017-06-08

申请号：US15320345

申请日：2015-05-11

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Takashi KUME ,  Takahiro SHIMURA ,  Akira MATSUSHITA ,  Shinichi FUJINO ,  Yusuke TAKAGI

IPC: H01L23/433 ,  H02M7/00 ,  H01L25/18 ,  H02M7/44 ,  H01L23/043 ,  H01L21/48

CPC classification number: H01L23/433 ,  H01L21/4817 ,  H01L21/4882 ,  H01L23/043 ,  H01L23/10 ,  H01L23/3675 ,  H01L25/07 ,  H01L25/18 ,  H01L2924/0002 ,  H02M7/003 ,  H02M7/44 ,  H01L2924/00

Abstract: An object of the present invention is to provide a power semiconductor module that can secure a satisfactory cooling without expanding the size of a case component. In the power semiconductor module according to the present invention, a frame case includes a front surface, a back surface, and a pair of side surfaces and formed with an opening part in at least one of the front surface and the back surface. A metal base is inserted into the opening part of the frame case. A frame case is provided with a joining part FW to which the peripheral part of the metal base and the peripheral part of the opening part of the frame case are joined. A first concaved part and a second concaved part are formed respectively in each of a pair of side surfaces of the frame case. Each of the concaved parts is prolonged toward an inner side of the frame case from the side surfaces, and includes a bottom surface formed facing the joining part FW side in an intermediate position of the thickness direction of each of the side surfaces.

公开(公告)号：US20190157179A1

公开(公告)日：2019-05-23

申请号：US16091583

申请日：2017-03-10

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Shinichi FUJINO ,  Takashi KUBOKI ,  Masaru KAWAI

IPC: H01L23/367 ,  H05K7/20

Abstract: It is possible to improve heat dissipation of a semiconductor circuit to be inserted into a case. A case into which a semiconductor circuit is inserted, the case including: a heat dissipating portion having, on an inner side, a contact surface coming in contact with the semiconductor circuit; a thin portion formed to surround the contact surface and formed to be thinner than the heat dissipating portion; and a recess formed between the thin portion and the heat dissipating portion and recessed with respect to the contact surface, in which an inner surface of the recess is arranged between the contact surface and an inner surface of the thin portion in a thickness direction of the case.

公开(公告)号：US20180303001A1

公开(公告)日：2018-10-18

申请号：US16017827

申请日：2018-06-25

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Tokihito SUWA ,  Yujiro KANEKO ,  Yusuke TAKAGI ,  Shinichi FUJINO ,  Takahiro SHIMURA

IPC: H05K5/02 ,  H05K7/14 ,  H01L23/473 ,  H01L23/495 ,  H05K7/20 ,  H01L23/00 ,  H02M7/537 ,  H01L21/56 ,  H01L23/31

Abstract: A power semiconductor device includes a first power semiconductor element, a second power semiconductor element, a first conductor plate, a second conductor plate, a third conductor plate, and a fourth conductor plate. The power semiconductor device also includes a DC positive terminal, a DC negative terminal, an AC terminal, and a sealing member that integrally seals the first conductor plate, the second conductor plate, the third conductor plate, and the fourth conductor plate. Each of the DC positive terminal, the DC negative terminal, and the AC terminal has a cut section formed by cutting a tie bar that integrally couples the DC positive terminal, the DC negative terminal, and the AC terminal.

公开(公告)号：US20160322286A1

公开(公告)日：2016-11-03

申请号：US15108093

申请日：2014-11-28

Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.

Inventor： Shinichi FUJINO ,  Takashi KUME

IPC: H01L23/495 ,  H02M7/44 ,  H02M7/00 ,  H01L21/48 ,  H01L21/54

CPC classification number: H01L23/49575 ,  H01L21/486 ,  H01L21/54 ,  H01L23/48 ,  H01L23/492 ,  H01L23/49517 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49568 ,  H01L24/33 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/13055 ,  H02M7/003 ,  H02M7/44 ,  H02M7/48 ,  H01L2924/00 ,  H01L2924/00014

Abstract: To suppress a temperature rise of a chip accompanying a production of large output by a power converter, and to reduce a size of the power converter. A power semiconductor device includes: a first power semiconductor element to configure an upper arm of an inverter circuit; a second power semiconductor element to configure a lower arm of the inverter circuit; a first lead frame to transmit power to the first power semiconductor element; a second lead frame to transmit power to the second power semiconductor element; a first gate lead frame to transmit a control signal to the first power semiconductor element; and a sealing member to seal the first power semiconductor element, the second power semiconductor element, the first lead frame, the second lead frame, and the first gate lead frame. In the power semiconductor device, a through-hole is formed in the sealing member, and a part of the first gate lead frame and a part of the second lead frame are exposed to an inner peripheral surface of the through-hole.

Abstract translation: 抑制由功率转换器产生大输出的芯片的温度上升，并且减小功率转换器的尺寸。 功率半导体器件包括：第一功率半导体元件，用于配置反相器电路的上臂; 用于配置所述逆变器电路的下臂的第二功率半导体元件; 第一引线框架，用于向第一功率半导体元件发送功率; 第二引线框架，用于向第二功率半导体元件发送功率; 第一栅极引线框架，用于向第一功率半导体元件发送控制信号; 以及用于密封第一功率半导体元件，第二功率半导体元件，第一引线框架，第二引线框架和第一栅极引线框架的密封构件。 在功率半导体器件中，在密封部件中形成有通孔，第一栅极引线框架的一部分和第二引线框架的一部分露出到通孔的内周面。

公开(公告)号：US20160234976A1

公开(公告)日：2016-08-11

申请号：US15025364

申请日：2014-10-01

Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.

Inventor： Takahiro SHIMURA ,  Akira MATSUSHITA ,  Shinichi FUJINO

IPC: H05K7/20 ,  H01L23/46 ,  H01L23/367 ,  H02M7/00

CPC classification number: H05K7/20927 ,  H01L23/3107 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/46 ,  H01L23/473 ,  H01L25/07 ,  H01L25/18 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/13055 ,  H01L2924/19107 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Size reduction of a power conversion device is intended. A power conversion device according to the present invention includes: a first power semiconductor module; a second semiconductor module; and a fixing member which fixes the first power semiconductor module, wherein the first power semiconductor module has a first power semiconductor device, a first case which houses the first power semiconductor device, and a first flange portion connected to the case, the second power semiconductor module has a second power semiconductor device, and a second case which houses the second power semiconductor device, the second case is connected to the first flange portion so as to provide a first flow path space for allowing a coolant to flow between the second case and the first case, and the first flange portion is fixed to the fixing member while supporting the first case and the second power semiconductor module.

Abstract translation: 旨在减小功率转换装置的尺寸。 根据本发明的电力转换装置包括：第一功率半导体模块; 第二半导体模块; 以及固定构件，其固定所述第一功率半导体模块，其中所述第一功率半导体模块具有第一功率半导体器件，容纳所述第一功率半导体器件的第一壳体和与所述壳体连接的第一凸缘部，所述第二功率半导体 模块具有第二功率半导体器件和容纳第二功率半导体器件的第二壳体，第二壳体连接到第一凸缘部分，以便提供第一流路空间，用于允许冷却剂在第二壳体和 第一壳体和第一凸缘部分固定到固定构件，同时支撑第一壳体和第二功率半导体模块。

公开(公告)号：US20160007492A1

公开(公告)日：2016-01-07

申请号：US14856819

申请日：2015-09-17

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Tokihito SUWA ,  Yujiro KANEKO ,  Yusuke TAKAGI ,  Shinichi FUJINO ,  Takahiro SHIMURA

IPC: H05K5/02 ,  H02M7/537 ,  H05K7/20

CPC classification number: H05K5/0247 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/473 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/34 ,  H01L24/36 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/40137 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/537 ,  H05K7/1432 ,  H05K7/20845 ,  H05K7/2089 ,  H05K7/20927 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099 ,  H01L2224/37599 ,  H01L2224/84

Abstract: A power semiconductor device includes a plurality of power semiconductor elements constituting upper and lower arms of an inverter circuit, a first sealing member sealing the plurality of power semiconductor elements, a positive electrode-side terminal and a negative electrode-side terminal each connected with any of the plurality of power semiconductor elements and protruding from the first sealing member, a second sealing member sealing at least a part of the positive electrode-side terminal and at least a part of the negative electrode-side terminal, and a case in which the power semiconductor elements sealed with the first sealing member are housed.

Abstract translation: 功率半导体装置包括构成逆变器电路的上臂和下臂的多个功率半导体元件，密封多个功率半导体元件的第一密封构件，正极侧端子和负极侧端子 并且从所述第一密封部件突出的第二密封部件，密封所述正极侧端子和所述负极侧端子的至少一部分的至少一部分的第二密封部件，其中， 容纳用第一密封构件密封的功率半导体元件。