公开(公告)号：US20200303360A1

公开(公告)日：2020-09-24

申请号：US16089079

申请日：2017-01-23

Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.

Inventor： Takeshi TOKUYAMA ,  Akira MATSUSHITA ,  Tokihito SUWA

IPC: H01L25/18 ,  H01L23/492 ,  H01L23/64

Abstract: There is a problem that the reliability of insulation is lowered. A length L2 from a center P of a conductor layer 334 to a peripheral edge portion of an insulating member 333 is formed to be longer than a length L1 from the center P of the conductor layer 334 to a peripheral edge portion of a protruding portion 307a of a base member 307. In other words, a base end surface 308 of the peripheral edge portion of the protruding portion 307a is located on an inner side with respect to an insulating member end surface 336 of the peripheral edge portion of the insulating member 333. Further, the insulating member end surface 336 of the insulating member 333 and a conductor layer end surface 344 of the conductor layer form an end surface at the same position. Since the base end surface 308 of the peripheral edge portion of the protruding portion 307a is located on the inner side with respect to the insulating member end surface 336 of the peripheral edge portion of the insulating member 333 in this manner, an insulation distance can be secured.

公开(公告)号：US20160007492A1

公开(公告)日：2016-01-07

申请号：US14856819

申请日：2015-09-17

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Tokihito SUWA ,  Yujiro KANEKO ,  Yusuke TAKAGI ,  Shinichi FUJINO ,  Takahiro SHIMURA

IPC: H05K5/02 ,  H02M7/537 ,  H05K7/20

CPC classification number: H05K5/0247 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/473 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/34 ,  H01L24/36 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/40137 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/1203 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/351 ,  H02M7/537 ,  H05K7/1432 ,  H05K7/20845 ,  H05K7/2089 ,  H05K7/20927 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099 ,  H01L2224/37599 ,  H01L2224/84

Abstract: A power semiconductor device includes a plurality of power semiconductor elements constituting upper and lower arms of an inverter circuit, a first sealing member sealing the plurality of power semiconductor elements, a positive electrode-side terminal and a negative electrode-side terminal each connected with any of the plurality of power semiconductor elements and protruding from the first sealing member, a second sealing member sealing at least a part of the positive electrode-side terminal and at least a part of the negative electrode-side terminal, and a case in which the power semiconductor elements sealed with the first sealing member are housed.

Abstract translation: 功率半导体装置包括构成逆变器电路的上臂和下臂的多个功率半导体元件，密封多个功率半导体元件的第一密封构件，正极侧端子和负极侧端子 并且从所述第一密封部件突出的第二密封部件，密封所述正极侧端子和所述负极侧端子的至少一部分的至少一部分的第二密封部件，其中， 容纳用第一密封构件密封的功率半导体元件。

公开(公告)号：US20200068735A1

公开(公告)日：2020-02-27

申请号：US16671872

申请日：2019-11-01

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Tokihito SUWA ,  Yujiro KANEKO ,  Yusuke TAKAGI ,  Shinichi FUJINO ,  Takahiro SHIMURA

IPC: H05K5/02 ,  H05K7/20 ,  H02M7/537 ,  H01L23/00 ,  H01L23/495 ,  H01L23/473 ,  H05K7/14

Abstract: A semiconductor module includes a first power semiconductor element having a first surface and a second surface. The semiconductor module also includes a second power semiconductor element having a first surface and a second surface. The semiconductor module also includes first, second, third, and fourth conductor plates, and a connecting part. The connecting part is integrally formed with the second conductor plate, extends toward the third conductor plate, and is connected to the third conductor plate.

公开(公告)号：US20190123659A1

公开(公告)日：2019-04-25

申请号：US16096564

申请日：2017-03-02

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Yutaka OKUBO ,  Tokihito SUWA ,  Yusuke TAKAGI

IPC: H02M7/00 ,  H02M7/48 ,  H01L23/473 ,  H01L23/367 ,  H05K7/20

Abstract: Reliability of a power converter is improved while suppressing an increase in size and an increase in cost of the power converter. A power converter according to the present invention includes a power semiconductor module and a flow path forming body which contains the power semiconductor module and forms a flow path through which a refrigerant flows. In the flow path forming body, a first opening which communicates one surface of the flow path forming body with the flow path is formed, and in the power semiconductor module, a first sealing surface which is formed along an insertion direction of the power semiconductor module into the flow path and faces the flow path forming body and a second sealing surface which is formed along the insertion direction and faces the flow path forming body are formed.

公开(公告)号：US20180211938A1

公开(公告)日：2018-07-26

申请号：US15500138

申请日：2015-06-08

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Nobutake TSUYUNO ,  Junpei KUSUKAWA ,  Takeshi TOKUYAMA ,  Tokihito SUWA

IPC: H01L25/07 ,  H01L23/367 ,  H01L23/373 ,  H01L23/495 ,  H02M7/00 ,  H02M7/537

CPC classification number: H01L25/072 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/3735 ,  H01L23/49575 ,  H01L23/5385 ,  H01L24/37 ,  H01L24/40 ,  H01L25/18 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/33 ,  H01L2224/37599 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/19107 ,  H02M7/003 ,  H02M7/537 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/37099 ,  H01L2224/45099

Abstract: It is an object of the present invention to provide a power module which can withstand a high voltage with a thin insulating layer. A power module of the present invention is provided with a first power semiconductor element 328 of an upper arm side constituting an inverter circuit, a second power semiconductor element 330 of a lower arm side, a first conductor part 320 which transmits an alternating current, a second conductor part 315 which transmits a direct current, an electrically-conductive heat dissipating part 307, a first intermediate conductor layer 910 disposed between the first conductor part 320 and the heat dissipating part 307 via an insulating layer 900, and a second intermediate conductor layer 911 disposed between the second conductor part 315 and the heat dissipating part 307 via the insulating layer 900, wherein, the second intermediate conductor layer 911 is formed to be separated from the first intermediate conductor layer 910, and the first intermediate conductor layer 910 forms a capacity circuit which shares the voltage between the first conductor part 320 and the heat dissipating part 307.

公开(公告)号：US20160095264A1

公开(公告)日：2016-03-31

申请号：US14962316

申请日：2015-12-08

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Yujiro KANEKO ,  Tokihito SUWA ,  Shinji HIRAMITSU ,  Takahiro SHIMURA

IPC: H05K7/20 ,  H02P27/06 ,  H02P29/00

CPC classification number: H05K7/20927 ,  B60L50/16 ,  B60L2200/26 ,  B60L2210/40 ,  H01L23/36 ,  H01L23/3736 ,  H01L23/473 ,  H01L24/36 ,  H01L24/40 ,  H01L2224/33 ,  H01L2224/40137 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/8484 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/003 ,  H02P27/06 ,  H02P29/60 ,  H05K7/209 ,  H05K7/20909 ,  Y02T10/70 ,  Y02T10/7077 ,  Y02T10/7241 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A power module includes a plurality of semiconductor devices constituting upper/lower arms of an inverter circuit, a plurality of conductive plates arranged to face electrode surfaces of the semiconductor devices and a module case configured to accommodate the semiconductor devices and conductive plates, wherein the module case includes a heat-radiation member made of plate-like metal and facing a surface of the conductive plate and a metallic frame body having an opening that is closed by the heat-radiation member, and wherein a heat-radiation fin unit having a plurality of heat-radiation fins vertically arranged thereon is provided at a center of the heat-radiation member, and a joint portion with the frame body is provided at an peripheral edge of the heat-radiation member, and the heat radiation member has a heat conductivity higher than that of the frame body, and the frame body has a higher rigidity than that of the heat-radiation member.

Abstract translation: 功率模块包括构成逆变器电路的上臂/下臂的多个半导体器件，布置成面对半导体器件的电极表面的多个导电板和被配置为容纳半导体器件和导电板的模块壳体，其中模块 壳体包括由板状金属制成并面对导电板的表面的散热构件和具有由散热构件封闭的开口的金属框体，并且其中具有多个散热构件的散热片单元 垂直设置在其上的散热片设置在散热构件的中心，并且与散热构件的周边边缘处设置有与框架体的接合部分，并且散热构件具有导热性 高于框体，并且框体具有比散热构件更高的刚性。

公开(公告)号：US20190006255A1

公开(公告)日：2019-01-03

申请号：US16066843

申请日：2016-12-07

Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.

Inventor： Tokihito SUWA ,  Seiji FUNABA

IPC: H01L23/29 ,  H01L23/00

Abstract: At the time of clamping, excessive stress is applied to bonding parts between substrates and input/output terminals, which may cause the bonding parts to be detached and cause the substrates to be cracked.A lower electrode of a power semiconductor element 11 is connected via a bonding material 13 to a first interconnection layer 12 arranged on a lower surface of the power semiconductor element 11, and an upper electrode 14 of the power semiconductor element 11 is connected via the bonding material 13 to a second interconnection layer 15 arranged on an upper surface. Also, a second main terminal 16 electrically connected to the upper electrode 14 of the power semiconductor element 11 is connected via the bonding material 13 to the second interconnection layer 15 and contacts and is positioned on a third interconnection layer 24 (spacer) arranged to be parallel to the first interconnection layer 12 on the lower surface. An insulating layer 26 is laminated on a surface of each of the first interconnection layer 12 to the third interconnection layer 24 opposite the bonding material 13, and a heat dissipating layer 27 is laminated on the insulating layer 26.

公开(公告)号：US20180303001A1

公开(公告)日：2018-10-18

申请号：US16017827

申请日：2018-06-25

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： Tokihito SUWA ,  Yujiro KANEKO ,  Yusuke TAKAGI ,  Shinichi FUJINO ,  Takahiro SHIMURA

IPC: H05K5/02 ,  H05K7/14 ,  H01L23/473 ,  H01L23/495 ,  H05K7/20 ,  H01L23/00 ,  H02M7/537 ,  H01L21/56 ,  H01L23/31

Abstract: A power semiconductor device includes a first power semiconductor element, a second power semiconductor element, a first conductor plate, a second conductor plate, a third conductor plate, and a fourth conductor plate. The power semiconductor device also includes a DC positive terminal, a DC negative terminal, an AC terminal, and a sealing member that integrally seals the first conductor plate, the second conductor plate, the third conductor plate, and the fourth conductor plate. Each of the DC positive terminal, the DC negative terminal, and the AC terminal has a cut section formed by cutting a tie bar that integrally couples the DC positive terminal, the DC negative terminal, and the AC terminal.