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1.发明申请Nonvolatile memory cells and nonvolatile memory devices including the same 有权非易失性存储器单元和包括其的非易失性存储器件公开(公告)号：US20110128772A1
公开(公告)日：2011-06-02
申请号：US12801533
申请日：2010-06-14
申请人： Ho-Jung Kim , In-kyeong Yoo , Jai-kwang Shin , Chang-jung Kim , Myoung-jae Lee , Ki-ha Hong
发明人： Ho-Jung Kim , In-kyeong Yoo , Jai-kwang Shin , Chang-jung Kim , Myoung-jae Lee , Ki-ha Hong
CPC分类号： G11C8/08 , G11C5/063 , G11C11/21 , G11C13/0004 , G11C13/0007 , G11C13/0023 , G11C13/003 , G11C13/0069 , G11C15/04 , G11C2013/0073 , G11C2213/33 , G11C2213/71 , G11C2213/76 , H01L27/2409 , H01L27/2481 , H01L27/249 , H01L45/04 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor.
摘要翻译： 当向双向开关施加正向电流时，非易失性存储单元可以包括具有第一阈值电压的双向开关，当向双向开关施加反向电流时，非易失性存储单元可包括第二阈值电压; 以及串联连接到双向开关的可变电阻器。 可变电阻器的电阻状态可以根据施加到可变电阻器的电压来控制。 第一阈值电压的大小和第二阈值电压的大小的和可以大于用于对可变电阻器执行写入操作的写入电压。
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公开(公告)号：US20110085368A1
公开(公告)日：2011-04-14
申请号：US12659516
申请日：2010-03-11
申请人： Ho-jung Kim , In-kyeong Yoo , Chang-jung Kim , Ki-ha Hong
发明人： Ho-jung Kim , In-kyeong Yoo , Chang-jung Kim , Ki-ha Hong
CPC分类号： H01L27/222 , G11C13/0002 , G11C2213/71 , G11C2213/73 , G11C2213/79 , H01L27/24
摘要： The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.
摘要翻译： 非易失性存储器件可以包括衬底，在垂直方向上的衬底上的多个第一信号线，具有连接到多个第一信号线的端部的多个存储器单元，垂直于第一信号线的多个第二信号线 基板上的多个第一信号线，并且各自连接到多个存储单元的另一端，以及多个选择元件，并且连接到多个第一信号线中的至少两个。
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公开(公告)号：US08357992B2
公开(公告)日：2013-01-22
申请号：US12659516
申请日：2010-03-11
申请人： Ho-jung Kim , In-kyeong Yoo , Chang-jung Kim , Ki-ha Hong
发明人： Ho-jung Kim , In-kyeong Yoo , Chang-jung Kim , Ki-ha Hong
CPC分类号： H01L27/222 , G11C13/0002 , G11C2213/71 , G11C2213/73 , G11C2213/79 , H01L27/24
摘要： The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.
摘要翻译： 非易失性存储器件可以包括衬底，在垂直方向上的衬底上的多个第一信号线，具有连接到多个第一信号线的端部的多个存储器单元，垂直于第一信号线的多个第二信号线 基板上的多个第一信号线，并且各自连接到多个存储单元的另一端，以及多个选择元件，并且连接到多个第一信号线中的至少两个。
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4.发明授权Nonvolatile memory cells and nonvolatile memory devices including the same 有权非易失性存储器单元和包括其的非易失性存储器件公开(公告)号：US08203863B2
公开(公告)日：2012-06-19
申请号：US12801533
申请日：2010-06-14
申请人： Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin , Chang-jung Kim , Myoung-jae Lee , Ki-ha Hong
发明人： Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin , Chang-jung Kim , Myoung-jae Lee , Ki-ha Hong
CPC分类号： G11C8/08 , G11C5/063 , G11C11/21 , G11C13/0004 , G11C13/0007 , G11C13/0023 , G11C13/003 , G11C13/0069 , G11C15/04 , G11C2013/0073 , G11C2213/33 , G11C2213/71 , G11C2213/76 , H01L27/2409 , H01L27/2481 , H01L27/249 , H01L45/04 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor.
摘要翻译： 当向双向开关施加正向电流时，非易失性存储单元可以包括具有第一阈值电压的双向开关，当向双向开关施加反向电流时，非易失性存储单元可包括第二阈值电压; 以及串联连接到双向开关的可变电阻器。 可变电阻器的电阻状态可以根据施加到可变电阻器的电压来控制。 第一阈值电压的大小和第二阈值电压的大小的和可以大于用于对可变电阻器执行写入操作的写入电压。
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5.发明授权Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices 有权场效应半导体器件及制造场效半导体器件的方法公开(公告)号：US09450071B2
公开(公告)日：2016-09-20
申请号：US12923266
申请日：2010-09-13
申请人： Ki-ha Hong , Jong-seob Kim , Jae-joon Oh , Jai-kwang Shin , Hyuk-soon Choi , In-jun Hwang , Ho-jung Kim
发明人： Ki-ha Hong , Jong-seob Kim , Jae-joon Oh , Jai-kwang Shin , Hyuk-soon Choi , In-jun Hwang , Ho-jung Kim
IPC分类号： H01L29/66 , H01L29/423 , H01L29/778 , H01L29/20
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/42316 , H01L29/7787
摘要： Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer.
摘要翻译： 提供了场效应半导体器件及其制造方法，场效应半导体器件包括在第一半导体层的第一表面上的第二半导体层，以及分别在第二半导体层的两侧上的第一和第二第三半导体层 ，分别在第一和第二第三半导体层上的源极和漏极，以及在第一半导体层的第二表面上的栅电极。
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6.发明申请Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices 有权场效应半导体器件及制造场效半导体器件的方法公开(公告)号：US20110062448A1
公开(公告)日：2011-03-17
申请号：US12923266
申请日：2010-09-13
申请人： Ki-ha Hong , Jong-seob Kim , Jae-joon Oh , Jai-kwang Shin , Hyuk-soon Choi , In-jun Hwang , Ho-jung Kim
发明人： Ki-ha Hong , Jong-seob Kim , Jae-joon Oh , Jai-kwang Shin , Hyuk-soon Choi , In-jun Hwang , Ho-jung Kim
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/66462 , H01L29/2003 , H01L29/42316 , H01L29/7787
摘要： Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer.
摘要翻译： 提供了场效应半导体器件及其制造方法，场效应半导体器件包括在第一半导体层的第一表面上的第二半导体层，以及分别在第二半导体层的两侧上的第一和第二第三半导体层 ，分别在第一和第二第三半导体层上的源极和漏极，以及在第一半导体层的第二表面上的栅电极。
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7.发明授权公开(公告)号：US08803565B2
公开(公告)日：2014-08-12
申请号：US13064264
申请日：2011-03-15
申请人： Ho-jung Kim , Jae-kwang Shin , Jae-joon Oh , Jong-seob Kim , Hyuk-soon Choi , In-jun Hwang , Ki-ha Hong
发明人： Ho-jung Kim , Jae-kwang Shin , Jae-joon Oh , Jong-seob Kim , Hyuk-soon Choi , In-jun Hwang , Ki-ha Hong
IPC分类号： H03K17/16
CPC分类号： H03K17/163 , H03K17/284
摘要： A power device includes a switching device having a control terminal and an output terminal; and a driving circuit configured to provide a driving voltage to the control terminal such that a voltage between the control terminal and the output terminal remains less than or equal to a critical voltage. A rise time required for the driving voltage to reach a target level is determined according to current-voltage characteristics of the switching device. And, when the voltage between the control terminal and the output terminal exceeds the critical voltage, leakage current is generated between the control terminal and the output terminal.
摘要翻译： 功率器件包括具有控制端子和输出端子的开关器件; 以及驱动电路，被配置为向控制端子提供驱动电压，使得控制端子和输出端子之间的电压保持小于或等于临界电压。 根据开关装置的电流 - 电压特性来确定驱动电压达到目标电平所需的上升时间。 而且，当控制端子与输出端子之间的电压超过临界电压时，控制端子与输出端子之间产生漏电流。
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8.发明申请公开(公告)号：US20110273221A1
公开(公告)日：2011-11-10
申请号：US13064264
申请日：2011-03-15
申请人： Ho-jung Kim , Jae-kwang Shin , Jae-Joon Oh , Jong-seob Kim , Hyuk-soon Choi , In-jun Hwang , Ki-ha Hong
发明人： Ho-jung Kim , Jae-kwang Shin , Jae-Joon Oh , Jong-seob Kim , Hyuk-soon Choi , In-jun Hwang , Ki-ha Hong
IPC分类号： H03K17/284 , H03K17/687
CPC分类号： H03K17/163 , H03K17/284
摘要： A power device includes a switching device having a control terminal and an output terminal; and a driving circuit configured to provide a driving voltage to the control terminal such that a voltage between the control terminal and the output terminal remains less than or equal to a critical voltage. A rise time required for the driving voltage to reach a target level is determined according to current-voltage characteristics of the switching device. And, when the voltage between the control terminal and the output terminal exceeds the critical voltage, leakage current is generated between the control terminal and the output terminal.
摘要翻译： 功率器件包括具有控制端子和输出端子的开关器件; 以及驱动电路，被配置为向控制端子提供驱动电压，使得控制端子和输出端子之间的电压保持小于或等于临界电压。 根据开关装置的电流 - 电压特性来确定驱动电压达到目标电平所需的上升时间。 而且，当控制端子与输出端子之间的电压超过临界电压时，控制端子与输出端子之间产生漏电流。
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公开(公告)号：US20110221482A1
公开(公告)日：2011-09-15
申请号：US12923857
申请日：2010-10-12
申请人： Ho-jung Kim , Jong-seob Kim , Jai-Kwang Shin , Jae-joon Oh , Ki-ha Hong , In-jun Hwang , Hyuk-soon Choi
发明人： Ho-jung Kim , Jong-seob Kim , Jai-Kwang Shin , Jae-joon Oh , Ki-ha Hong , In-jun Hwang , Hyuk-soon Choi
CPC分类号： H03K17/6871 , H02M1/08 , H02M3/158 , H02M3/337 , H02M2001/0074 , H03K2217/0081
摘要： Provided is a semiconductor device that may include a switching device having a negative threshold voltage, and a driving unit between a power terminal and a ground terminal and providing a driving voltage for driving the switching device. The switching device may be connected to a virtual ground node having a virtual ground voltage that is greater than a ground voltage supplied from the ground terminal and may be turned on when a difference between the driving voltage and the virtual ground voltage is greater than the negative threshold voltage.
摘要翻译： 提供一种半导体器件，其可以包括具有负阈值电压的开关器件，以及电源端子和接地端子之间的驱动单元，并且提供用于驱动开关器件的驱动电压。 开关器件可以连接到具有大于从接地端子提供的接地电压的虚拟接地电压的虚拟接地节点，并且当驱动电压和虚拟接地电压之间的差大于负值时，可以导通 阈值电压。
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公开(公告)号：US08508194B2
公开(公告)日：2013-08-13
申请号：US12923857
申请日：2010-10-12
申请人： Ho-jung Kim , Jong-seob Kim , Jai-kwang Shin , Jae-joon Oh , Ki-ha Hong , In-jun Hwang , Hyuk-soon Choi
发明人： Ho-jung Kim , Jong-seob Kim , Jai-kwang Shin , Jae-joon Oh , Ki-ha Hong , In-jun Hwang , Hyuk-soon Choi
IPC分类号： G05F1/10
CPC分类号： H03K17/6871 , H02M1/08 , H02M3/158 , H02M3/337 , H02M2001/0074 , H03K2217/0081
摘要： Provided is a semiconductor device that may include a switching device having a negative threshold voltage, and a driving unit between a power terminal and a ground terminal and providing a driving voltage for driving the switching device. The switching device may be connected to a virtual ground node having a virtual ground voltage that is greater than a ground voltage supplied from the ground terminal and may be turned on when a difference between the driving voltage and the virtual ground voltage is greater than the negative threshold voltage.
摘要翻译： 提供一种半导体器件，其可以包括具有负阈值电压的开关器件，以及电源端子和接地端子之间的驱动单元，并且提供用于驱动开关器件的驱动电压。 开关器件可以连接到具有大于从接地端子提供的接地电压的虚拟接地电压的虚拟接地节点，并且当驱动电压和虚拟接地电压之间的差大于负值时，可以导通 阈值电压。
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