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公开(公告)号：US20110085368A1
公开(公告)日：2011-04-14
申请号：US12659516
申请日：2010-03-11
申请人： Ho-jung Kim , In-kyeong Yoo , Chang-jung Kim , Ki-ha Hong
发明人： Ho-jung Kim , In-kyeong Yoo , Chang-jung Kim , Ki-ha Hong
CPC分类号： H01L27/222 , G11C13/0002 , G11C2213/71 , G11C2213/73 , G11C2213/79 , H01L27/24
摘要： The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.
摘要翻译： 非易失性存储器件可以包括衬底，在垂直方向上的衬底上的多个第一信号线，具有连接到多个第一信号线的端部的多个存储器单元，垂直于第一信号线的多个第二信号线 基板上的多个第一信号线，并且各自连接到多个存储单元的另一端，以及多个选择元件，并且连接到多个第一信号线中的至少两个。
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2.发明申请Nonvolatile memory cells and nonvolatile memory devices including the same 有权非易失性存储器单元和包括其的非易失性存储器件公开(公告)号：US20110128772A1
公开(公告)日：2011-06-02
申请号：US12801533
申请日：2010-06-14
申请人： Ho-Jung Kim , In-kyeong Yoo , Jai-kwang Shin , Chang-jung Kim , Myoung-jae Lee , Ki-ha Hong
发明人： Ho-Jung Kim , In-kyeong Yoo , Jai-kwang Shin , Chang-jung Kim , Myoung-jae Lee , Ki-ha Hong
CPC分类号： G11C8/08 , G11C5/063 , G11C11/21 , G11C13/0004 , G11C13/0007 , G11C13/0023 , G11C13/003 , G11C13/0069 , G11C15/04 , G11C2013/0073 , G11C2213/33 , G11C2213/71 , G11C2213/76 , H01L27/2409 , H01L27/2481 , H01L27/249 , H01L45/04 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor.
摘要翻译： 当向双向开关施加正向电流时，非易失性存储单元可以包括具有第一阈值电压的双向开关，当向双向开关施加反向电流时，非易失性存储单元可包括第二阈值电压; 以及串联连接到双向开关的可变电阻器。 可变电阻器的电阻状态可以根据施加到可变电阻器的电压来控制。 第一阈值电压的大小和第二阈值电压的大小的和可以大于用于对可变电阻器执行写入操作的写入电压。
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公开(公告)号：US08357992B2
公开(公告)日：2013-01-22
申请号：US12659516
申请日：2010-03-11
申请人： Ho-jung Kim , In-kyeong Yoo , Chang-jung Kim , Ki-ha Hong
发明人： Ho-jung Kim , In-kyeong Yoo , Chang-jung Kim , Ki-ha Hong
CPC分类号： H01L27/222 , G11C13/0002 , G11C2213/71 , G11C2213/73 , G11C2213/79 , H01L27/24
摘要： The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines.
摘要翻译： 非易失性存储器件可以包括衬底，在垂直方向上的衬底上的多个第一信号线，具有连接到多个第一信号线的端部的多个存储器单元，垂直于第一信号线的多个第二信号线 基板上的多个第一信号线，并且各自连接到多个存储单元的另一端，以及多个选择元件，并且连接到多个第一信号线中的至少两个。
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4.发明授权Nonvolatile memory cells and nonvolatile memory devices including the same 有权非易失性存储器单元和包括其的非易失性存储器件公开(公告)号：US08203863B2
公开(公告)日：2012-06-19
申请号：US12801533
申请日：2010-06-14
申请人： Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin , Chang-jung Kim , Myoung-jae Lee , Ki-ha Hong
发明人： Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin , Chang-jung Kim , Myoung-jae Lee , Ki-ha Hong
CPC分类号： G11C8/08 , G11C5/063 , G11C11/21 , G11C13/0004 , G11C13/0007 , G11C13/0023 , G11C13/003 , G11C13/0069 , G11C15/04 , G11C2013/0073 , G11C2213/33 , G11C2213/71 , G11C2213/76 , H01L27/2409 , H01L27/2481 , H01L27/249 , H01L45/04 , H01L45/147 , H01L45/148
摘要： A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor.
摘要翻译： 当向双向开关施加正向电流时，非易失性存储单元可以包括具有第一阈值电压的双向开关，当向双向开关施加反向电流时，非易失性存储单元可包括第二阈值电压; 以及串联连接到双向开关的可变电阻器。 可变电阻器的电阻状态可以根据施加到可变电阻器的电压来控制。 第一阈值电压的大小和第二阈值电压的大小的和可以大于用于对可变电阻器执行写入操作的写入电压。
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公开(公告)号：US20150028278A1
公开(公告)日：2015-01-29
申请号：US14444083
申请日：2014-07-28
申请人： Myoung-jae Lee , Seong-ho Cho , Ho-jung Kim , Young-soo Park , David Seo , In-kyeong Yoo
发明人： Myoung-jae Lee , Seong-ho Cho , Ho-jung Kim , Young-soo Park , David Seo , In-kyeong Yoo
IPC分类号： H01L45/00
CPC分类号： H01L29/788 , G06N3/049 , G06N3/063 , G11C11/54 , G11C11/5685 , G11C13/0007 , G11C14/0063 , G11C16/0433 , G11C2213/15 , G11C2213/53 , H01L27/11521 , H01L28/00 , H01L29/408 , H01L29/42324 , H01L29/51 , H01L29/512 , H01L29/517 , H01L29/685 , H01L29/78 , H01L45/085 , H01L45/1206 , H01L45/147
摘要： Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.
摘要翻译： 提供了非易失性存储晶体管和包括非易失性存储晶体管的器件。 非易失性存储晶体管可以包括沟道元件，对应于沟道元件的栅极电极，沟道元件和栅电极之间的栅极绝缘层，栅极绝缘层和栅电极之间的离子物质移动层，以及源极 以及相对于沟道元件彼此分离的漏极。 根据施加到栅电极的电压，发生离子物质移动层处的离子物质的运动。 阈值电压根据离子物质的运动而变化。 非易失性存储晶体管具有多电平特性。
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6.发明申请Storage devices having a security function and methods of securing data stored in the storage device 有权具有安全功能的存储设备和保存存储在存储设备中的数据的方法公开(公告)号：US20110222685A1
公开(公告)日：2011-09-15
申请号：US12923375
申请日：2010-09-17
申请人： Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin
发明人： Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin
CPC分类号： G06F21/85 , G06F21/78 , G11C7/24 , G11C11/005 , G11C13/0002 , G11C13/0059 , G11C14/009
摘要： A storage device may include a storage unit that stores data transmitted via a plurality of first wires; and a security control unit that controls connection between each of a plurality of second wires connected to an external device and each of the plurality of first wires by programming a plurality of switching devices according to an encryption key.
摘要翻译： 存储装置可以包括：存储单元，存储经由多条第一布线发送的数据; 以及安全控制单元，其通过根据加密密钥对多个交换设备进行编程来控制连接到外部设备的多个第二线路中的每一个与所述多条第一线路中的每一条线路之间的连接。
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7.发明授权Storage devices having a security function and methods of securing data stored in the storage device 有权具有安全功能的存储设备和保存存储在存储设备中的数据的方法公开(公告)号：US08509430B2
公开(公告)日：2013-08-13
申请号：US12923375
申请日：2010-09-17
申请人： Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin
发明人： Ho-jung Kim , In-kyeong Yoo , Jai-kwang Shin
IPC分类号： H04L29/06
CPC分类号： G06F21/85 , G06F21/78 , G11C7/24 , G11C11/005 , G11C13/0002 , G11C13/0059 , G11C14/009
摘要： A storage device may include a storage unit that stores data transmitted via a plurality of first wires; and a security control unit that controls connection between each of a plurality of second wires connected to an external device and each of the plurality of first wires by programming a plurality of switching devices according to an encryption key.
摘要翻译： 存储装置可以包括：存储单元，存储经由多条第一布线发送的数据; 以及安全控制单元，其通过根据加密密钥对多个交换设备进行编程来控制连接到外部设备的多个第二线路中的每一个与所述多条第一线路中的每一条线路之间的连接。
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8.发明授权Semiconductor devices including variable resistance materials and methods of operating the same 有权包括可变电阻材料的半导体器件及其操作方法公开(公告)号：US08456889B2
公开(公告)日：2013-06-04
申请号：US12929519
申请日：2011-01-31
申请人： Young-bae Kim , In-kyeong Yoo , Chang-jung Kim
发明人： Young-bae Kim , In-kyeong Yoo , Chang-jung Kim
IPC分类号： G11C11/00
CPC分类号： H01L29/685 , G11C11/5685 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2213/53
摘要： Semiconductor devices including variable resistance materials and methods of operating the semiconductor devices. The semiconductor devices use variable resistance materials with resistances that vary according to applied voltages as channel layers.
摘要翻译： 包括可变电阻材料的半导体器件和操作半导体器件的方法。 半导体器件使用具有根据施加的电压而变化的电阻的可变电阻材料作为沟道层。
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公开(公告)号：US08633868B2
公开(公告)日：2014-01-21
申请号：US12659156
申请日：2010-02-26
申请人： Chang-jung Kim , In-kyeong Yoo , Young-soo Park , Chan-hee Lee
发明人： Chang-jung Kim , In-kyeong Yoo , Young-soo Park , Chan-hee Lee
CPC分类号： G09G3/001 , G02B27/2264 , G09G3/003 , G09G3/3225 , G09G3/3611 , G09G2300/023 , G09G2310/0213 , G09G2340/10 , H04N13/395
摘要： An apparatus for displaying a three-dimensional (3D) image may include a plurality of display panels and a controller configured to apply image signals to each of the plurality of display panels. At least one of the display panels may include a transparent display panel. The plurality of display panels may be spaced apart from each other in a depth direction. A method of displaying a three-dimensional (3D) image may include displaying plane images on each of a plurality of display panels. At least one of the plurality of display panels may include a transparent display panel. The plurality of display panels may be spaced apart from each other in a depth direction.
摘要翻译： 用于显示三维（3D）图像的装置可以包括多个显示面板和被配置为将图像信号应用于多个显示面板中的每一个的控制器。 至少一个显示面板可以包括透明显示面板。 多个显示面板可以在深度方向上彼此间隔开。 显示三维（3D）图像的方法可以包括在多个显示面板的每一个上显示平面图像。 多个显示面板中的至少一个可以包括透明显示面板。 多个显示面板可以在深度方向上彼此间隔开。
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10.发明申请SEMICONDUCTOR DEVICES INCLUDING VARIABLE RESISTANCE MATERIAL AND METHODS OF FABRICATING THE SAME 审中-公开包含可变电阻材料的半导体器件及其制造方法公开(公告)号：US20130026558A1
公开(公告)日：2013-01-31
申请号：US13451688
申请日：2012-04-20
申请人： Sang-hun Jeon , In-kyeong Yoo , Chang-jung Kim , Young-bae Kim
发明人： Sang-hun Jeon , In-kyeong Yoo , Chang-jung Kim , Young-bae Kim
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/66621 , H01L29/66545 , H01L29/66969 , H01L29/685 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： The semiconductor device includes an insulating substrate, a channel layer over the insulating substrate, a gate at least partially extending from an upper surface of the channel layer into the channel layer, a source and a drain respectively at opposing sides of the gate on the channel layer, a gate insulating layer surrounding, the gate and electrically insulating the gate from the channel layer, the source, and the drain, and a variable resistance material layer between the insulating substrate and the gate.
摘要翻译： 半导体器件包括绝缘衬底，绝缘衬底上的沟道层，至少部分地从沟道层的上表面延伸到沟道层中的栅极，分别在沟道上的栅极的相对侧处的源极和漏极 所述栅极绝缘层包围所述栅极并使所述栅极与所述沟道层，所述源极和所述漏极电绝缘，以及所述绝缘基板和所述栅极之间的可变电阻材料层。
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