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公开(公告)号：US20120182792A1
公开(公告)日：2012-07-19
申请号：US13008992
申请日：2011-01-19
申请人： Hong-Chen CHENG , Chih-Chieh CHIU , Hsu-Shun CHEN , Chung-Ji LU , Cheng-Hung LEE , Hung-Jen LIAO
发明人： Hong-Chen CHENG , Chih-Chieh CHIU , Hsu-Shun CHEN , Chung-Ji LU , Cheng-Hung LEE , Hung-Jen LIAO
IPC分类号： G11C11/413 , G11C5/14
CPC分类号： G11C11/413
摘要： A SRAM system includes: a SRAM cell array coupled between high and low supply nodes, a difference therebetween defining a data retention voltage (VDR) for a low power data retention mode; a main power switch coupling one of high and low supply nodes to a main power supply and disconnecting the one high and low supply nodes from the main power supply during the low power data retention mode; a monitor cell including a SRAM cell preloaded with a data bit and configured for data destruction responsive to a reduction in VDR before data destruction occurs in the SRAM cell array; and a clamping power switch responsive to data destruction in the monitor cell to couple the one of the high and low supply nodes to the main power supply.
摘要翻译： SRAM系统包括：耦合在高电源节点和低电源节点之间的SRAM单元阵列，其间限定用于低功率数据保持模式的数据保持电压（VDR）; 主电源开关将高电源和低电源节点之一耦合到主电源，并且在低功率数据保持模式期间将一个高电源和低电源节点与主电源断开; 监控单元，其包括预先装载有数据位的SRAM单元，并且被配置为在SRAM单元阵列中发生数据破坏之前响应于VDR的减小而进行的数据破坏; 以及钳位电源开关，其响应于监视器单元中的数据破坏，将高电源节点和低电源节点中的一个耦合到主电源。
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公开(公告)号：US20120195139A1
公开(公告)日：2012-08-02
申请号：US13443619
申请日：2012-04-10
申请人： Hsu-Shun CHEN , Cheng Hung LEE , Chung-Ji LU , Hong-Chen CHENG , Chung-Yi WU , Chih-Chieh CHIU
发明人： Hsu-Shun CHEN , Cheng Hung LEE , Chung-Ji LU , Hong-Chen CHENG , Chung-Yi WU , Chih-Chieh CHIU
CPC分类号： G11C7/1048 , G11C5/14
摘要： In some embodiments related to a memory array, a sense amplifier (SA) uses a first power supply, e.g., voltage VDDA, while other circuitry, e.g., signal output logic, uses a second power supply, e.g., voltage VDDB. Various embodiments place the SA and a pair of transferring devices at a local IO row, and a voltage keeper at the main IO section of the same memory array. The SA, the transferring devices, and the voltage keeper, when appropriate, operate together so that the data logic of the circuitry provided by voltage VDDB is the same as the data logic of the circuitry provided by voltage VDDA.
摘要翻译： 在与存储器阵列相关的一些实施例中，读出放大器（SA）使用第一电源，例如电压VDDA，而其它电路（例如，信号输出逻辑）使用第二电源，例如电压VDDB。 各种实施例将SA和一对传送装置放置在本地IO行上，并将电压保持器放置在同一存储器阵列的主IO部分。 SA，传输装置和电压保持器在适当的情况下一起工作，使得由电压VDDB提供的电路的数据逻辑与由电压VDDA提供的电路的数据逻辑相同。
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公开(公告)号：US20110194362A1
公开(公告)日：2011-08-11
申请号：US12702594
申请日：2010-02-09
申请人： Chung-Ji LU , Lee-Cheng HUNG , Hung-Jen LIAO , Hsu-Shun CHEN , Hong-Chen CHENG , Chung-Yi Wu , Uppu Sharath CHANDRA
发明人： Chung-Ji LU , Lee-Cheng HUNG , Hung-Jen LIAO , Hsu-Shun CHEN , Hong-Chen CHENG , Chung-Yi Wu , Uppu Sharath CHANDRA
摘要： A representative circuit device includes a local control circuit having a level shifter, wherein in response to receipt of a first address signal the level shifter shifts the first address signal from a first voltage level to a second voltage level, providing a level shifted first address signal; and a word-line driver having at least one input for receiving a plurality of address signals, wherein the at least one input includes a first input that is coupled to the local control circuit to receive the level shifted first address signal, and an output that is electrically coupled to a word line of a memory cell array.
摘要翻译： 代表性电路装置包括具有电平移位器的本地控制电路，其中响应于接收到第一地址信号，电平移位器将第一地址信号从第一电压电平移位到第二电压电平，提供电平移位的第一地址信号 ; 以及具有用于接收多个地址信号的至少一个输入的字线驱动器，其中所述至少一个输入包括耦合到所述本地控制电路以接收所述电平移位的第一地址信号的第一输入，以及输出， 电耦合到存储单元阵列的字线。
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公开(公告)号：US20120092939A1
公开(公告)日：2012-04-19
申请号：US12917708
申请日：2010-11-02
申请人： Hong-Chen CHENG , Chih-Chieh CHIU , Chung-Ji LU , Cheng Hung LEE
发明人： Hong-Chen CHENG , Chih-Chieh CHIU , Chung-Ji LU , Cheng Hung LEE
CPC分类号： G11C7/067 , G11C7/12 , G11C11/419
摘要： A memory having a single-ended sensing scheme includes a bit line, a memory cell coupled to the bit line, and a precharge circuit. The precharge circuit is configured to precharge the bit line to a precharge voltage between a power supply voltage and a ground.
摘要翻译： 具有单端感测方案的存储器包括位线，耦合到位线的存储单元和预充电电路。 预充电电路被配置为将位线预充电到电源电压和地之间的预充电电压。
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公开(公告)号：US20130010560A1
公开(公告)日：2013-01-10
申请号：US13535075
申请日：2012-06-27
申请人： Chung-Ji LU , Hung-Jen LIAO , Cheng Hung LEE , Derek C. TAO , Annie-Li-Keow LUM , Hong-Chen CHENG
发明人： Chung-Ji LU , Hung-Jen LIAO , Cheng Hung LEE , Derek C. TAO , Annie-Li-Keow LUM , Hong-Chen CHENG
摘要： A circuit includes a first node, a second node, a first current mirror circuit, and a second current minor circuit. The first current mirror circuit has a reference end and a mirrored end. The reference end of the first current minor circuit is coupled to the first node, and the mirrored end of the first current minor circuit is coupled to the second node. The second current minor circuit has a reference end and a mirrored end. The reference end of the second current minor circuit is coupled to the second node, and the mirrored end of the second current minor circuit is coupled to the first node.
摘要翻译： 电路包括第一节点，第二节点，第一电流镜电路和第二电流次要电路。 第一电流镜电路具有参考端和镜像端。 第一当前次要电路的参考端耦合到第一节点，并且第一当前次要电路的镜像端耦合到第二节点。 第二个当前次级电路具有参考端和镜像端。 第二电流次级电路的参考端耦合到第二节点，并且第二电流次级电路的镜像端耦合到第一节点。
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公开(公告)号：US20130208533A1
公开(公告)日：2013-08-15
申请号：US13372099
申请日：2012-02-13
CPC分类号： G11C11/4094 , G11C11/419
摘要： A memory includes a first bit line, a memory cell coupled to the first bit line, and a read assist device coupled to the first bit line. The read assist device is configured to pull a first voltage on the first bit line toward a predetermined voltage in response to a first datum being read out from the memory cell. The read assist device includes a first circuit configured to establish a first current path between the first bit line and a node of the predetermined voltage during a first stage. The read assist device further includes a second circuit configured to establish a second current path between the first bit line and the node of the predetermined voltage during a second, subsequent stage.
摘要翻译： 存储器包括第一位线，耦合到第一位线的存储器单元和耦合到第一位线的读取辅助器件。 读取辅助装置被配置为响应于从存储器单元读出的第一数据，将第一位线上的第一电压拉向预定电压。 读取辅助装置包括第一电路，其被配置为在第一阶段期间在第一位线和预定电压的节点之间建立第一电流路径。 读取辅助装置还包括第二电路，其被配置为在第二后续阶段期间在第一位线和预定电压的节点之间建立第二电流路径。
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公开(公告)号：US20130194877A1
公开(公告)日：2013-08-01
申请号：US13362847
申请日：2012-01-31
CPC分类号： G11C7/12 , G11C7/106 , G11C7/1087 , G11C7/18 , G11C11/419 , G11C2207/005
摘要： A memory includes a plurality of memory blocks, a plurality of global bit lines, a common pre-charging circuit, and a selection circuit. Each memory block includes a pair of bit lines, and a plurality of memory cells coupled to the pair of bit lines. Each global bit line is coupled to at least one of the memory blocks. The pre-charging circuit is configured to pre-charge the global bit lines, one at a time, to a pre-charge voltage. The selection circuit is coupled between the pre-charging circuit and the global bit lines, and configured to couple the global bit lines, one at a time, to the pre-charging circuit.
摘要翻译： 存储器包括多个存储器块，多个全局位线，公共预充电电路和选择电路。 每个存储块包括一对位线和耦合到该对位线的多个存储器单元。 每个全局位线耦合到至少一个存储器块。 预充电电路被配置为将全局位线一次一个地预充电到预充电电压。 选择电路耦合在预充电电路和全局位线之间，并且被配置为将全局位线一次一个地耦合到预充电电路。
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公开(公告)号：US20120206953A1
公开(公告)日：2012-08-16
申请号：US13025872
申请日：2011-02-11
申请人： Hong-Chen CHENG , Ming-Yi LEE , Kuo-Hua PAN , Jung-Hsuan CHEN , Li-Chun TIEN , Cheng Hung LEE , Hung-Jen LIAO
发明人： Hong-Chen CHENG , Ming-Yi LEE , Kuo-Hua PAN , Jung-Hsuan CHEN , Li-Chun TIEN , Cheng Hung LEE , Hung-Jen LIAO
CPC分类号： G11C5/06 , G11C5/147 , G11C5/148 , G11C11/417
摘要： A circuit comprises a first PMOS transistor, a second PMOS transistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, and a fourth NMOS transistor. The PMOS transistors and the NMOS transistors are configured to provide a first voltage reference node having a first reference voltage and a second voltage reference node having a second reference voltage. The first reference voltage and the second reference voltage serve as a first reference voltage and a second reference voltage for a memory cell, respectively.
摘要翻译： 电路包括第一PMOS晶体管，第二PMOS晶体管，第一NMOS晶体管，第二NMOS晶体管，第三NMOS晶体管和第四NMOS晶体管。 PMOS晶体管和NMOS晶体管被配置为提供具有第一参考电压的第一电压参考节点和具有第二参考电压的第二参考电压节点。 第一参考电压和第二参考电压分别用作存储器单元的第一参考电压和第二参考电压。
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公开(公告)号：US20130094307A1
公开(公告)日：2013-04-18
申请号：US13271353
申请日：2011-10-12
申请人： Hong-Chen CHENG , Jung-Ping Yang , Chiting Cheng , Cheng-Hung Lee , Sang H. Dong , Hung-Jen Liao
发明人： Hong-Chen CHENG , Jung-Ping Yang , Chiting Cheng , Cheng-Hung Lee , Sang H. Dong , Hung-Jen Liao
IPC分类号： G11C7/00
CPC分类号： G11C7/12 , G11C11/419
摘要： In a digital memory with an array of bit cells coupled to word lines and bit lines, each bit cell having cross coupled inverters isolated from bit lines by passing gate transistors until addressed, some or all of the bit cells are switchable between a sleep mode and a standby mode in response to a control signal. A bit line bias circuit controls the voltage at which the bit lines are caused to float when in the sleep mode. A pull-up transistor for each bit line BL or BLB in a complementary pair has a conductive channel coupled to a positive supply voltage and a gate coupled to the other bit line in the pair, BLB or BL, respectively. A connecting transistor also can be coupled between the bit lines of the complementary pair, bringing the floating bit lines to the supply voltage less a difference voltage ΔV.
摘要翻译： 在具有耦合到字线和位线的位单元阵列的数字存储器中，每个位单元具有通过将栅极晶体管直接寻址而与位线隔离的交叉耦合的反相器，部分或全部位单元可在睡眠模式和 响应于控制信号的待机模式。 位线偏置电路控制在处于睡眠模式时使位线浮动的电压。 用于互补对中的每个位线BL或BLB的上拉晶体管具有耦合到正电源电压的导电沟道和耦合到该对BLB或BL中的另一位线的栅极。 连接晶体管也可以耦合在互补对的位线之间，使浮置位线降低到差值ΔVV的电源电压。
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公开(公告)号：US20120061764A1
公开(公告)日：2012-03-15
申请号：US12879447
申请日：2010-09-10
申请人： Annie LUM , Derek C. TAO , Cheng Hung LEE , Chung-Ji LU , Hong-Chen CHENG , Vineet Kumar AGRAWAL , Keun-Young KIM , Pyong Yun CHO
发明人： Annie LUM , Derek C. TAO , Cheng Hung LEE , Chung-Ji LU , Hong-Chen CHENG , Vineet Kumar AGRAWAL , Keun-Young KIM , Pyong Yun CHO
IPC分类号： H01L27/088 , G06F17/50
CPC分类号： G06F17/5068 , G06F17/5081 , G06F2217/12 , H01L27/0207 , H01L27/088 , Y02P90/265
摘要： The layouts, device structures, and methods described above utilize dummy devices to extend the diffusion regions of edge structures and/or non-allowed structures to the dummy device. Such extension of diffusion regions resolves or reduces LOD and edge effect issues. In addition, treating the gate structure of a dummy device next to an edge device also allows only one dummy structure to be added next to the dummy device and saves the real estate on the semiconductor chip. The dummy devices are deactivated and their performance is not important. Therefore, utilizing dummy devices to extend the diffusion regions of edge structures and/or non-allowed structures according to design rules allows the resolution or reduction or LOD and edge effect issues without the penalty of yield reduction or increase in layout areas.
摘要翻译： 上述布局，装置结构和方法利用虚设装置将边缘结构和/或非允许结构的扩散区域扩展到虚设装置。 这种扩散区域的扩展可解决或减少LOD和边缘效应问题。 此外，在边缘装置旁边处理伪装置的栅极结构也仅允许在虚设装置旁边添加一个虚拟结构，并将该不动产保存在半导体芯片上。 虚拟设备被禁用，其性能不重要。 因此，利用虚设装置根据设计规则扩展边缘结构和/或非允许结构的扩散区域允许分辨率或降低或LOD和边缘效应发生，而不会降低成品率或增加布局面积。
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