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12 条记录 (耗时 0.026 秒)

    Process for forming organic semiconducting layer having molecular alignment
    1.
    发明授权
    Process for forming organic semiconducting layer having molecular alignment 有权
    用于形成具有分子对准的有机半导体层的方法

    公开(公告)号：US06737303B2

    公开(公告)日：2004-05-18

    申请号：US10301632

    申请日：2002-11-22

    申请人： Horng-Long Cheng ,  Wei-Yang Chou ,  Chai-Yuan Sheu ,  Yu-Wu Wang ,  Jia-Chong Ho ,  Chi-Chang Liao

    发明人： Horng-Long Cheng ,  Wei-Yang Chou ,  Chai-Yuan Sheu ,  Yu-Wu Wang ,  Jia-Chong Ho ,  Chi-Chang Liao

    IPC分类号： H01L2100

    CPC分类号： H01L51/0545 ,  H01L51/0012 ,  H01L51/0541

    摘要： A process for forming an organic semiconducting layer having molecular alignment. First, a photoalignment organic layer is formed on a substrate or A dielectric layer. Next, the photoalignment organic layer is irradiated by polarized light through a mask, such that the photoalignment organic layer becomes an orientation layer having molecular alignment. Finally, an organic semiconducting layer is formed on the orientation layer, such that the organic semiconducting layer aligns according to the alignment of the orientation layer to exhibit molecular alignment. The present invention can form an organic semiconducting layer with different molecular alignments in different regions over the same substrate by means of polarized light exposure through a mask.

    摘要翻译： 一种形成具有分子取向性的有机半导体层的方法。 首先，在基板或电介质层上形成光电转换有机层。 接下来，通过掩模将偏光有机层照射，使得光取向有机层成为具有分子取向的取向层。 最后，在取向层上形成有机半导体层，使得有机半导体层根据取向层的取向对准以显示分子对准。 本发明可以通过通过掩模的偏光曝光在相同的衬底上形成在不同区域中具有不同分子对准的有机半导体层。

    Pixel structure of an organic light-emitting diode display device and its fabrication method
    3.
    发明授权
    Pixel structure of an organic light-emitting diode display device and its fabrication method 有权

    公开(公告)号：US06522066B2

    公开(公告)日：2003-02-18

    申请号：US09803450

    申请日：2001-03-08

    申请人： Chai-Yuan Sheu ,  Wen-Chun Wang ,  Yung-Hui Yeh

    发明人： Chai-Yuan Sheu ,  Wen-Chun Wang ,  Yung-Hui Yeh

    IPC分类号： H01J162

    CPC分类号： H01L27/3244 ,  H01L27/322 ,  H01L51/5284

    摘要： A pixel structure of a full-color organic light-emitting diode (OLED) display device comprises a black matrix, a color changing medium, two thin film transistors, a storage capacitor, and an OLED device arranged on a substrate. The pixel structure of the display device uses blue organic light-emitting diodes or polymer light-emitting diodes as electroluminescent media. The low-temperature poly Si (LTPS) thin film transistors provide a current to the OLED device and serve as an active driving device. The color changing medium changes blue light into red or green light to form full-color OLED. The processing steps include the black matrix process, the island process, the gate process, the interlayer process, the color changing medium process, and the OLED deposition process. Because a color changing medium is integrated on the LTPS thin film transistors, this invention can make display devices of high resolution, high luminous efficiency and wide viewing angle.

    Manufacturing method for a TFT electrode for preventing metal layer diffusion
    4.
    发明授权
    Manufacturing method for a TFT electrode for preventing metal layer diffusion 有权
    用于防止金属层扩散的TFT电极的制造方法

    公开(公告)号：US07632694B2

    公开(公告)日：2009-12-15

    申请号：US11375336

    申请日：2006-03-15

    申请人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

    发明人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

    IPC分类号： H01L21/00

    CPC分类号： H01L29/78669 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

    摘要： A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

    摘要翻译： 一种用于在制造期间防止金属离子扩散到相邻绝缘层的TFT电极的制造方法。 该方法按照所述的顺序包括提供衬底; 在所述基板上形成由单金属层结构或多金属层结构中的一个构成的第一金属层; 对所述第一金属层进行光刻和蚀刻处理以形成所述TFT电极的栅电极; 在所述第一金属层上形成透明导电电极以至少覆盖所述栅电极，并且在制造期间防止金属离子扩散，所述透明导电电极由铟锡氧化物，氧化铟锌，Zn​​O或有机材料中的一种构成; 并且通过对透明导电电极进行光刻和蚀刻处理，形成用作阻挡层的像素电极，以防止在制造期间的金属离子扩散。

    Method of fabricating thin film transistor TFT array
    5.
    发明申请
    Method of fabricating thin film transistor TFT array 有权
    制造薄膜晶体管TFT阵列的方法

    公开(公告)号：US20050059190A1

    公开(公告)日：2005-03-17

    申请号：US10673325

    申请日：2003-09-30

    申请人： Chi-Shen Lee ,  Cheng-Chung Chen ,  Chi-Lin Chen ,  Chai-Yuan Sheu

    发明人： Chi-Shen Lee ,  Cheng-Chung Chen ,  Chi-Lin Chen ,  Chai-Yuan Sheu

    IPC分类号： H01L29/423 ,  H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/417 ,  H01L29/49 ,  H01L29/786

    CPC分类号： H01L27/124 ,  H01L27/1255

    摘要： A method of fabricating thin film transistor TFT array discloses ions of desired-plated metal and the graphs of the desired-plated area are made by oxidation-reduction materials processes ion replacement for implementing the metal wiring layout of the TFT-LCDs. This, therefore, can overcome the problem of uneasy metal etching thereto achieves the purpose of an automatic alignment. The method uses the ability of the oxidation-reduction reaction to implement the replacement for alternating the lithography etching process in the metal wiring layout as presented in the traditional technique.

    摘要翻译： 制造薄膜晶体管TFT阵列的方法公开了所需电镀金属的离子，并且通过氧化还原材料制造所需电镀区域的图形来处理用于实现TFT-LCD的金属布线布局的离子替换。 因此，能够克服金属蚀刻不牢的问题，能够实现自动对准的目的。 该方法使用氧化还原反应的能力来实现在传统技术中呈现的金属布线布局中交替光刻蚀刻工艺的替代。

    Method for forming a single-crystal silicon layer on a transparent substrate
    8.
    发明授权
    Method for forming a single-crystal silicon layer on a transparent substrate 有权
    在透明基板上形成单晶硅层的方法

    公开(公告)号：US07045441B2

    公开(公告)日：2006-05-16

    申请号：US10628893

    申请日：2003-07-28

    申请人： Chich Shang Chang ,  Chi-Shen Lee ,  Shun-Fa Huang ,  Jung Fang Chang ,  Wen-Chih Hu ,  Liang-Tang Wang ,  Chai-Yuan Sheu

    发明人： Chich Shang Chang ,  Chi-Shen Lee ,  Shun-Fa Huang ,  Jung Fang Chang ,  Wen-Chih Hu ,  Liang-Tang Wang ,  Chai-Yuan Sheu

    IPC分类号： H01L21/762 ,  H01L23/15

    CPC分类号： B32B37/00 ,  B32B2310/0825 ,  B32B2311/02 ,  B32B2315/08 ,  C03C27/046 ,  H01L2224/83192 ,  Y10S438/977

    摘要： A method for forming a, single-crystal silicon layer on a transparent substrate. A transparent substrate having an amorphous silicon layer formed thereon and a silicon wafer having a hydrogen ion layer formed therein are provided. The silicon wafer is then reversed and laminated onto the amorphous silicon layer so that a layer of single-crystal silicon is between the hydrogen ion layer and the amorphous silicon layer. The laminated silicon wafer and the amorphous silicon layer are then subjected to laser or infrared light to cause chemical bonding of the single crystal silicon layer and the amorphous silicon layer and inducing a hydro-cracking reaction thereby separating the silicon wafer is and the transparent substrate at the hydrogen ion layer, and leaving the single-crystal silicon layer on the transparent substrate.

    摘要翻译： 在透明基板上形成单晶硅层的方法。 提供其上形成有非晶硅层的透明基板和其中形成有氢离子层的硅晶片。 然后将硅晶片反转并层压到非晶硅层上，使得单晶硅层位于氢离子层和非晶硅层之间。 然后对层压硅晶片和非晶硅层进行激光或红外光以使单晶硅层和非晶硅层发生化学键合，并引起加氢裂化反应，从而将硅晶片和透明基板分离 氢离子层，并在透明基板上留下单晶硅层。