公开(公告)号：US20120273787A1

公开(公告)日：2012-11-01

申请号：US13244086

申请日：2011-09-23

申请人： Hwa Yeul OH ,  O Sung Seo ,  Je Hyeong Park ,  Shin II Choi ,  Dong-Won Woo ,  Ji-Young Park ,  Jean Ho Song ,  Sang Gab Kim

发明人： Hwa Yeul OH ,  O Sung Seo ,  Je Hyeong Park ,  Shin II Choi ,  Dong-Won Woo ,  Ji-Young Park ,  Jean Ho Song ,  Sang Gab Kim

IPC分类号： H01L33/08 ,  H01L21/336

CPC分类号： H01L27/1259 ,  G02F1/136286

摘要： In a thin film transistor array panel according to an exemplary embodiment of the present invention, a plasma process using a mixed gas including hydrogen gas and nitrogen gas with a ratio of a predetermined value is undertaken before depositing a passivation layer. In this manner, performance deterioration of the thin film transistor may be prevented and simultaneously, haze in a transparent electrode may be prevented. Alternatively, a first passivation layer is depsoited, then removed. A passivation layer is again re-deposited, such that little or no haze is present in the resulting passivation layer.

摘要翻译： 在根据本发明的示例性实施例的薄膜晶体管阵列面板中，在沉积钝化层之前进行使用包括氢气和含有预定值的氮气的混合气体的等离子体处理。 以这种方式，可以防止薄膜晶体管的性能恶化，并且同时可以防止透明电极中的雾度。 或者，第一钝化层被剥离，然后除去。 再次沉积钝化层，使得在所得钝化层中存在很少或没有雾度。

公开(公告)号：US20120064678A1

公开(公告)日：2012-03-15

申请号：US13069070

申请日：2011-03-22

申请人： Byeong-Jin LEE ,  Yu-Gwang Jeong ,  Dong-Ju Yang ,  Bong-Kyun Kim ,  Hong-Sick Park ,  Byeong-Beom Kim ,  Sang-Gab Kim ,  Ji-Young Park ,  Jean-Ho Song ,  Ki-Yeup Lee ,  Shin-Il Choi

发明人： Byeong-Jin LEE ,  Yu-Gwang Jeong ,  Dong-Ju Yang ,  Bong-Kyun Kim ,  Hong-Sick Park ,  Byeong-Beom Kim ,  Sang-Gab Kim ,  Ji-Young Park ,  Jean-Ho Song ,  Ki-Yeup Lee ,  Shin-Il Choi

IPC分类号： H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78678

摘要： A method for manufacturing a TFT array panel includes forming a photosensitive film pattern with first and second parts in first and second sections on a metal layer, etching the metal layer of a third section using the film pattern as a mask to form first and second metal patterns, etching the film pattern to remove the first part, etching first and second amorphous silicon layers of the third section using the second part as a mask to form an amorphous silicon pattern and a semiconductor, etching the first and second metal patterns of the first section using the second part as a mask to form a source electrode and a drain electrode including an upper layer and a lower layer, and etching the amorphous silicon pattern of the region corresponding to the first section by using the second part as a mask to form an ohmic contact.

摘要翻译： 一种TFT阵列板的制造方法，其特征在于，在金属层的第一和第二部分中形成具有第一和第二部分的感光膜图案，使用所述膜图案作为掩模蚀刻第三部分的金属层，以形成第一和第二金属 蚀刻薄膜图案以去除第一部分，使用第二部分作为掩模蚀刻第三部分的第一和第二非晶硅层以形成非晶硅图案和半导体，蚀刻第一部分的第一和第二金属图案 使用第二部分作为掩模形成源电极和包括上层和下层的漏极，并且通过使用第二部分作为掩模来蚀刻与第一部分相对应的区域的非晶硅图案以形成 欧姆接触。

公开(公告)号：US08450850B2

公开(公告)日：2013-05-28

申请号：US13193413

申请日：2011-07-28

申请人： Hong Long Ning ,  Chang-Oh Jeong ,  Ji-Young Park ,  Sang-Gab Kim ,  Sung-Haeng Cho ,  Yeon-Hong Kim ,  Jin-Su Byun

发明人： Hong Long Ning ,  Chang-Oh Jeong ,  Ji-Young Park ,  Sang-Gab Kim ,  Sung-Haeng Cho ,  Yeon-Hong Kim ,  Jin-Su Byun

IPC分类号： H01L23/52

CPC分类号： H01L29/458 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/76877 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/78684 ,  H01L51/0048 ,  H01L2221/1094

摘要： Provided are a thin-film transistor (TFT) substrate and a method of manufacturing the same. The method includes: forming a passivation film by forming an insulating film on a substrate; forming a photoresist pattern by forming a photoresist film on the passivation film, exposing the photoresist film to light, and developing the photoresist film; performing a first dry-etching by dry-etching the passivation film using the photoresist pattern as an etch mask; performing a baking to reduce a size of the photoresist pattern; performing a second dry-etching to form a contact hole by dry-etching the passivation film again using the photoresist pattern as a mask; removing the photoresist pattern; and forming a pixel electrode of a carbon composition that includes carbon nanotubes and/or graphene on a top surface of the passivation film.

摘要翻译： 提供一种薄膜晶体管（TFT）基板及其制造方法。 该方法包括：通过在基板上形成绝缘膜来形成钝化膜; 通过在钝化膜上形成光致抗蚀剂膜形成光致抗蚀剂图案，将光致抗蚀剂膜曝光并使光致抗蚀剂膜显影; 通过使用光致抗蚀剂图案作为蚀刻掩模来干蚀刻钝化膜来执行第一干蚀刻; 进行烘烤以减小光致抗蚀剂图案的尺寸; 通过使用光致抗蚀剂图案作为掩模再次干蚀刻钝化膜来进行第二次干蚀刻以形成接触孔; 去除光致抗蚀剂图案; 以及在钝化膜的顶表面上形成包括碳纳米管和/或石墨烯的碳组合物的像素电极。

公开(公告)号：US08383437B2

公开(公告)日：2013-02-26

申请号：US13223958

申请日：2011-09-01

申请人： Ji-Young Park ,  Shin-Il Choi ,  Jong-Hyun Choung ,  Sang Gab Kim ,  Seon-Il Kim ,  Sang-Tae Kim ,  Joon-Woo Lee ,  Young-Chul Park ,  Young-Jun Jin ,  Kyong-Min Kang ,  Suck-Jun Lee ,  O-Byoung Kwon ,  In-Ho Yu ,  Sang-Hoon Jang ,  Min-Ki Lim ,  Yu-Jin Lee

发明人： Ji-Young Park ,  Shin-Il Choi ,  Jong-Hyun Choung ,  Sang Gab Kim ,  Seon-Il Kim ,  Sang-Tae Kim ,  Joon-Woo Lee ,  Young-Chul Park ,  Young-Jun Jin ,  Kyong-Min Kang ,  Suck-Jun Lee ,  O-Byoung Kwon ,  In-Ho Yu ,  Sang-Hoon Jang ,  Min-Ki Lim ,  Yu-Jin Lee

IPC分类号： H01L21/00

CPC分类号： C09K13/08 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  H01L21/32134 ,  H01L27/1259 ,  H01L29/41733

摘要： An etchant according to exemplary embodiments of the present invention includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.05 wt % to about 3 wt % of copper salt, about 0.1 wt % to about 10 wt % of organic acid or organic acid salt, and water.

摘要翻译： 根据本发明的示例性实施方案的蚀刻剂包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化合物，约1重量％至约10重量％的无机酸， 约0.5重量％至约5重量％的环胺化合物，约0.1重量％至约5重量％的氯化合物，约0.05重量％至约3重量％的铜盐，约0.1重量％至约10重量％ ％的有机酸或有机酸盐，和水。

公开(公告)号：US20120112346A1

公开(公告)日：2012-05-10

申请号：US13193413

申请日：2011-07-28

申请人： Hong Long NING ,  Chang-Oh Jeong ,  Ji-Young Park ,  Sang-Gab Kim ,  Sung-Haeng Cho ,  Yeon-Hong Kim ,  Jin-Su Byun

发明人： Hong Long NING ,  Chang-Oh Jeong ,  Ji-Young Park ,  Sang-Gab Kim ,  Sung-Haeng Cho ,  Yeon-Hong Kim ,  Jin-Su Byun

IPC分类号： H01L23/532 ,  B82Y40/00 ,  B82Y20/00 ,  H01L21/768

CPC分类号： H01L29/458 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/76877 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/78684 ,  H01L51/0048 ,  H01L2221/1094

摘要： Provided are a thin-film transistor (TFT) substrate and a method of manufacturing the same. The method includes: forming a passivation film by forming an insulating film on a substrate; forming a photoresist pattern by forming a photoresist film on the passivation film, exposing the photoresist film to light, and developing the photoresist film; performing a first dry-etching by dry-etching the passivation film using the photoresist pattern as an etch mask; performing a baking to reduce a size of the photoresist pattern; performing a second dry-etching to form a contact hole by dry-etching the passivation film again using the photoresist pattern as a mask; removing the photoresist pattern; and forming a pixel electrode of a carbon composition that includes carbon nanotubes and/or graphene on a top surface of the passivation film.

摘要翻译： 提供一种薄膜晶体管（TFT）基板及其制造方法。 该方法包括：通过在基板上形成绝缘膜来形成钝化膜; 通过在钝化膜上形成光致抗蚀剂膜形成光致抗蚀剂图案，将光致抗蚀剂膜曝光并使光致抗蚀剂膜显影; 通过使用光致抗蚀剂图案作为蚀刻掩模来干蚀刻钝化膜来执行第一干蚀刻; 进行烘烤以减小光致抗蚀剂图案的尺寸; 通过使用光致抗蚀剂图案作为掩模再次干蚀刻钝化膜来进行第二次干蚀刻以形成接触孔; 去除光致抗蚀剂图案; 以及在钝化膜的顶表面上形成包括碳纳米管和/或石墨烯的碳组合物的像素电极。

公开(公告)号：US08765614B2

公开(公告)日：2014-07-01

申请号：US13406388

申请日：2012-02-27

申请人： Jong-Hyun Choung ,  Ji-Young Park ,  Seon-Il Kim ,  Sang-Gab Kim ,  In-Bae Kim ,  Jae-Woo Jeong

发明人： Jong-Hyun Choung ,  Ji-Young Park ,  Seon-Il Kim ,  Sang-Gab Kim ,  In-Bae Kim ,  Jae-Woo Jeong

IPC分类号： H01L21/302

CPC分类号： C23F1/18 ,  H01L21/32134 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/66765

摘要： A method of forming a metal pattern on a display substrate includes blanket depositing a copper-based layer having a thickness between about 1,500 Å and about 5,500 Å on a base substrate, and forming a patterned photoresist layer on the copper-based layer. The copper-based layer is over-etched by an etching composition containing an oxidizing moderating agent where the over-etch factor is between about 40% and about 200% while using the patterned photoresist layer as an etch stopping layer, and where the etching composition includes ammonium persulfate between about 0.1% by weight and about 50% by weight, includes an azole-based compound between about 0.01% by weight and about 5% by weight and a remainder of water. Thus, reliability of the metal pattern and that of manufacturing a display substrate may be improved.

摘要翻译： 在显示基板上形成金属图案的方法包括：在基底基板上铺设厚度在约至约为500埃之间的铜基层，并在铜基层上形成图案化的光致抗蚀剂层。 通过含有氧化调节剂的蚀刻组合物对铜基层进行过蚀刻，其中过蚀刻因子在约40％至约200％之间，同时使用图案化的光致抗蚀剂层作为蚀刻停止层，并且其中蚀刻组合物 包括约0.1重量％至约50重量％的过硫酸铵，包括约0.01重量％至约5重量％的唑类化合物和剩余的水。 因此，可以提高金属图案的可靠性和制造显示基板的可靠性。

公开(公告)号：US08755019B2

公开(公告)日：2014-06-17

申请号：US13193488

申请日：2011-07-28

申请人： Ji-Young Park ,  Sang Gab Kim ,  Yong-Mo Choi ,  Hyung Jun Kim ,  Sung-Haeng Cho ,  Hong-Sick Park ,  Byeong-Jin Lee ,  Soo-Wan Yoon

发明人： Ji-Young Park ,  Sang Gab Kim ,  Yong-Mo Choi ,  Hyung Jun Kim ,  Sung-Haeng Cho ,  Hong-Sick Park ,  Byeong-Jin Lee ,  Soo-Wan Yoon

IPC分类号： G02F1/1339 ,  G02F1/13

CPC分类号： H01L27/1288 ,  G02F1/1362 ,  G02F2001/136231 ,  H01L29/41733

摘要： A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode.

摘要翻译： 制造液晶显示器的方法包括：在第一基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层的整个表面上依次形成半导体层，非晶硅层和数据金属层; 对准半导体层和数据金属层的边缘; 在栅绝缘层和数据金属层上形成透明导电层; 通过图案化透明导电层形成第一像素电极和第二像素电极; 以及使用所述第一像素电极和所述第二像素电极作为掩模，通过蚀刻所述数据金属层和所述非晶硅层来形成包括源电极，漏电极和欧姆接触层的数据线，并且使所述半导体在 源电极和漏电极。

公开(公告)号：US09133550B2

公开(公告)日：2015-09-15

申请号：US13433013

申请日：2012-03-28

申请人： In-Bae Kim ,  Jong-Hyun Choung ,  Ji-Young Park ,  Seon-Il Kim ,  Jae-Woo Jeong ,  Sang Gab Kim ,  Sang-Woo Kim ,  Ki-Beom Lee ,  Dae-Woo Lee ,  Sam-Young Cho

发明人： In-Bae Kim ,  Jong-Hyun Choung ,  Ji-Young Park ,  Seon-Il Kim ,  Jae-Woo Jeong ,  Sang Gab Kim ,  Sang-Woo Kim ,  Ki-Beom Lee ,  Dae-Woo Lee ,  Sam-Young Cho

IPC分类号： C09K13/00 ,  C23F1/18 ,  C23F1/26 ,  H01L21/3213 ,  C09K13/08 ,  H01L27/12

CPC分类号： C23F1/18 ,  C09K13/08 ,  C23F1/26 ,  H01L21/32134 ,  H01L27/124

摘要： An etching composition, a method of forming a metal pattern using the etching composition, and a method of manufacturing a display substrate are disclosed. The etching composition includes about 0.1% by weight to about 25% by weight of ammonium persulfate, about 0.1% by weight to about 25% by weight of an organic acid, about 0.01% by weight to about 5% by weight of a chelating agent, about 0.01% by weight to about 5% by weight of a fluoride compound, about 0.01% by weight to about 5% by weight of a chloride compound, about 0.01% by weight to about 2% by weight of an azole-based compound and a remainder of water. Thus, a copper layer may be stably etched to improve a reliability of manufacturing the metal pattern and the display substrate.

摘要翻译： 公开了一种蚀刻组合物，使用该蚀刻组合物形成金属图案的方法以及一种制造显示衬底的方法。 蚀刻组合物包含约0.1重量％至约25重量％的过硫酸铵，约0.1重量％至约25重量％的有机酸，约0.01重量％至约5重量％的螯合剂 ，约0.01重量％至约5重量％的氟化物，约0.01重量％至约5重量％的氯化物化合物，约0.01重量％至约2重量％的唑类化合物 和余下的水。 因此，可以稳定地蚀刻铜层以提高制造金属图案和显示基板的可靠性。

公开(公告)号：US08946004B2

公开(公告)日：2015-02-03

申请号：US12544144

申请日：2009-08-19

申请人： Joo-Han Kim ,  Ki-Yong Song ,  Dong-Ju Yang ,  Hee-Joon Kim ,  Yeo-Geon Yoon ,  Sung-Hen Cho ,  Chang-Hoon Kim ,  Jae-Hong Kim ,  Yu-Gwang Jeong ,  Ki-Yeup Lee ,  Sang-Gab Kim ,  Yun-Jong Yeo ,  Shin-Il Choi ,  Ji-Young Park

发明人： Joo-Han Kim ,  Ki-Yong Song ,  Dong-Ju Yang ,  Hee-Joon Kim ,  Yeo-Geon Yoon ,  Sung-Hen Cho ,  Chang-Hoon Kim ,  Jae-Hong Kim ,  Yu-Gwang Jeong ,  Ki-Yeup Lee ,  Sang-Gab Kim ,  Yun-Jong Yeo ,  Shin-Il Choi ,  Ji-Young Park

IPC分类号： H01L29/786 ,  H01L27/12 ,  G02F1/1362

CPC分类号： H01L24/05 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L2224/04042 ,  H01L2924/14 ,  H01L2924/1426 ,  H01L2924/00

摘要： A contact portion of wiring and a method of manufacturing the same are disclosed. A contact portion of wiring according to an embodiment includes: a substrate; a conductive layer disposed on the substrate; an interlayer insulating layer disposed on the conductive layer and having a contact hole; a metal layer disposed on the conductive layer and filling the contact hole; and a transparent electrode disposed on the interlayer insulating layer and connected to the metal layer, wherein the interlayer insulating layer includes a lower insulating layer and an upper insulating layer disposed on the lower insulating layer, the lower insulating layer is undercut at the contact hole, and the metal layer fills in the portion where the lower insulating layer is undercut.

摘要翻译： 公开了布线的接触部分及其制造方法。 根据实施例的布线的接触部分包括：基板; 设置在所述基板上的导电层; 设置在所述导电层上并具有接触孔的层间绝缘层; 设置在所述导电层上并填充所述接触孔的金属层; 以及透明电极，设置在所述层间绝缘层上并连接到所述金属层，其中所述层间绝缘层包括下绝缘层和设置在所述下绝缘层上的上绝缘层，所述下绝缘层在所述接触孔处被底切， 并且金属层填充在下绝缘层被切下的部分。

公开(公告)号：US20120318769A1

公开(公告)日：2012-12-20

申请号：US13406388

申请日：2012-02-27

申请人： Jong-Hyun Choung ,  Ji-Young Park ,  Seon-Il Kim ,  Sang-Gab Kim ,  In-Bae Kim ,  Jae-Woo Jeong

发明人： Jong-Hyun Choung ,  Ji-Young Park ,  Seon-Il Kim ,  Sang-Gab Kim ,  In-Bae Kim ,  Jae-Woo Jeong

IPC分类号： C23F1/00 ,  H01B13/00

CPC分类号： C23F1/18 ,  H01L21/32134 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/66765

摘要： A method of forming a metal pattern on a display substrate includes blanket depositing a copper-based layer having a thickness between about 1,500 Å and about 5,500 Å on a base substrate, and forming a patterned photoresist layer on the copper-based layer. The copper-based layer is over-etched by an etching composition containing an oxidizing moderating agent where the over-etch factor is between about 40% and about 200% while using the patterned photoresist layer as an etch stopping layer, and where the etching composition includes ammonium persulfate between about 0.1% by weight and about 50% by weight, includes an azole-based compound between about 0.01% by weight and about 5% by weight and a remainder of water. Thus, reliability of the metal pattern and that of manufacturing a display substrate may be improved.

摘要翻译： 在显示基板上形成金属图案的方法包括：在基底基板上铺设厚度在约至约为500埃之间的铜基层，并在铜基层上形成图案化的光致抗蚀剂层。 通过含有氧化调节剂的蚀刻组合物对铜基层进行过蚀刻，其中过蚀刻因子在约40％至约200％之间，同时使用图案化的光致抗蚀剂层作为蚀刻停止层，并且其中蚀刻组合物 包括约0.1重量％至约50重量％的过硫酸铵，包括约0.01重量％至约5重量％的唑类化合物和剩余的水。 因此，可以提高金属图案的可靠性和制造显示基板的可靠性。