摘要:
An apparatus and method for improving the performance of an error correction code against the effects of error waves in a Multi-Input Multi-Output (MIMO) communication system are provided. In a receiver of the MIMO communication system, a Minimum Mean Square Error (MMSE) receiver unit estimates transmitted signals from at least two paths using signals received at each of receive antennas, a signal deprocessor selects one of the estimated signals, stores the other estimated signal, assigns weighting values to the selected signal and a previous detected signal, combines the weighted signals, and detects transmitted data from the combined signal, a signal reproducer reproduces a transmitted signal from the detected transmitted data, and a subtractor updates the received signals by subtracting the reproduced transmitted signal from the received signals and provides them to the MMSE receiver unit.
摘要:
A method and apparatus for efficiently transmitting channel quality information on a radio channel in a mobile communication system are provided. The reporting cycle of channel quality information is changed adaptively according to time-varying characteristics associated with the Doppler frequency of a radio channel or the variation of the channel quality information. Therefore, the channel quality information is efficiently transmitted. Also, the decrease of unnecessary frequent information transmissions reduces an uplink interference power level and power consumption in user equipment (UE), as well.
摘要:
An apparatus and method for receiving a signal in a MIMO communication system are provided. In the signal receiving method, a first received signal received at each of the receive antennas is equalized in a predetermined first method. Each of the equalized transmit antenna signals is despread with a plurality of spreading codes used in a transmitter. The strongest transmit antenna signal is detected among the despread transmit antenna signals, and decoded in a predetermined second method, for error verification. The verified strongest transmit antenna signal is reproduced as an interference signal. A second received signal is generated by subtracting the interference signal from the first received signal and equalized in the first method. The above operation is repeated on the equalized transmit antenna signals except the strongest transmit antenna signal.
摘要:
An apparatus and method for processing input/output data in a communication system is disclosed. By adding a controller that adjusts timing intervals between a first buffer having a first timing interval and a second buffer having a second timing interval, buffer usage can be minimized.
摘要:
A sense amplifier having a pre-amplifier and a main-amplifier is disclosed. The pre-amplifier is connected to paired data line, senses and amplifies data on the paired data line using voltage mode and outputting a pair of differential signal. The main-amplifier is connected to the paired data line, senses and amplifies data on the paired data line using current mode and generating a first amplified signal, senses and amplifies the first amplified signal using voltage mode in response to the pair of differential signal, and outputting an amplified data.
摘要:
A structure and formation method for electrically connecting aluminum and copper interconnections stabilize a semiconductor metallization process using an inner shape electrically connecting the aluminum and copper interconnections. To this end, a copper interconnection is disposed on a semiconductor substrate. An interconnection induction layer and an interconnection insertion layer are sequentially formed on the copper interconnection to have a contact hole exposing the copper interconnection. An upper diameter of the contact hole may be formed to be larger than a lower diameter thereof. A barrier layer and an aluminum interconnection are filled in the contact hole. The aluminum interconnection is formed not to directly contact the copper interconnection through the contact hole.
摘要:
A semiconductor device includes a first interlayer dielectric including a trench on a semiconductor layer, a mask pattern on the first interlayer dielectric, a first conductive pattern in the trench, and a second interlayer dielectric on the mask pattern. The second interlayer dielectric includes an opening over the first conductive pattern. A second conductive pattern is in the opening and is electrically connected to the first conductive pattern. The first conductive pattern has an upper surface lower than an upper surface of the mask pattern.
摘要:
Methods of forming a metal interconnection structure are provided. The methods include forming an insulating layer on a semiconductor substrate including a first metal interconnection. The insulating layer is patterned to form an opening that exposes the first metal interconnection. A first diffusion barrier layer is formed on the exposed first metal interconnection. After forming the first diffusion barrier layer, a second diffusion barrier layer is formed on the first diffusion barrier layer in the opening, the second diffusion barrier layer contacting a sidewall of the opening. A second metal interconnection is formed on the second diffusion barrier layer.
摘要:
A semiconductor memory device includes a memory cell array including a plurality of memory cell array blocks, a plurality of pairs of first data lines for transceiving data with corresponding memory cell array blocks, a plurality of column selection signal lines disposed in an orthogonal direction to the pairs of first data lines, and a plurality of pairs of second data lines to transceive data with corresponding pairs of first data lines of the pairs of first data lines. The memory cell array includes a signal interference compensator that shifts a voltage level of a second data line signal of one of the pair of second data lines interfered by a column selection signal line, to a voltage level of a first data line signal of other of the pair of second data lines not interfered so as to compensate for a signal interference.
摘要:
A read data path circuit for use in the semiconductor memory device includes a bit line sense amplifier, a local input/output line sense amplifier, a column selection unit operationally coupling a bit line pair with the local input/output line pair in response to a column selection signal, where the bit line pair is coupled to the bit line sense amplifier and the local input/output line pair is coupled to the local input/output line sense amplifier, and a bit line disturbance preventing unit configured to equalize signal levels of the local input/output line pair before the column selection signal is activated, and configured to sense and amplify signal levels of bit line data transferred to the local input/output line pair after the column selection signal is activated.