公开(公告)号：US10549985B2

公开(公告)日：2020-02-04

申请号：US15692938

申请日：2017-08-31

Applicant: Infineon Technologies AG

Inventor： Dominic Maier ,  Matthias Steiert ,  Chau Fatt Chiang ,  Christian Geissler ,  Bernd Goller ,  Thomas Kilger ,  Johannes Lodermeyer ,  Franz-Xaver Muehlbauer ,  Chee Yang Ng ,  Beng Keh See ,  Claus Waechter

IPC: B81B7/00 ,  B81C1/00

Abstract: A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.

公开(公告)号：US20220148951A1

公开(公告)日：2022-05-12

申请号：US17544221

申请日：2021-12-07

Applicant: Infineon Technologies AG

Inventor： Ngoc-Hoa Huynh ,  Franz-Xaver Muehlbauer ,  Claus Waechter ,  Veronika Theyerl ,  Dominic Maier ,  Thomas Kilger ,  Saverio Trotta ,  Ashutosh Baheti ,  Georg Meyer-Berg ,  Maciej Wojnowski

IPC: H01L23/498 ,  H01L23/367 ,  H01L23/538 ,  H01Q9/28 ,  H01Q1/22 ,  H01Q9/04 ,  H01Q21/06 ,  H01L21/56 ,  H01L23/31

Abstract: A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.

公开(公告)号：US20180148322A1

公开(公告)日：2018-05-31

申请号：US15692938

申请日：2017-08-31

Applicant: Infineon Technologies AG

Inventor： Dominic Maier ,  Matthias Steiert ,  Chau Fatt Chiang ,  Christian Geissler ,  Bernd Goller ,  Thomas Kilger ,  Johannes Lodermeyer ,  Franz-Xaver Muehlbauer ,  Chee Yang Ng ,  Beng Keh See ,  Claus Waechter

IPC: B81B7/00 ,  B81C1/00

Abstract: A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.

公开(公告)号：US09725303B1

公开(公告)日：2017-08-08

申请号：US15071882

申请日：2016-03-16

Applicant: Infineon Technologies AG

Inventor： Dominic Maier ,  Franz-Xaver Muehlbauer ,  Thomas Kilger

IPC: H01L21/50 ,  H01L23/49 ,  B81B7/00 ,  B81C1/00 ,  H04R19/00 ,  H04R1/28

CPC classification number: B81B7/0064 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2207/012 ,  B81B2207/094 ,  B81B2207/095 ,  B81C1/00301 ,  H04R1/086 ,  H04R1/28 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: A semiconductor device includes a microelectromechanical system (MEMS) die, an encapsulation material, a via element, a non-conductive lid, and a conductive layer. The encapsulation material laterally surrounds the MEMS die. The via element extends through the encapsulation material. The non-conductive lid is over the MEMS die and defines a cavity. The conductive layer is over the MEMS die and the encapsulation material and is electrically coupled to the via element.

公开(公告)号：US11195787B2

公开(公告)日：2021-12-07

申请号：US15045687

申请日：2016-02-17

Applicant: Infineon Technologies AG

Inventor： Ngoc-Hoa Huynh ,  Franz-Xaver Muehlbauer ,  Claus Waechter ,  Veronika Huber ,  Dominic Maier ,  Thomas Kilger ,  Saverio Trotta ,  Ashutosh Baheti ,  Georg Meyer-Berg ,  Maciej Wojnowski

IPC: H01L23/31 ,  H01L23/498 ,  H01L23/367 ,  H01L23/538 ,  H01Q9/28 ,  H01Q1/22 ,  H01Q9/04 ,  H01Q21/06 ,  H01L21/56 ,  H01Q9/26

Abstract: A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.

公开(公告)号：US20170236776A1

公开(公告)日：2017-08-17

申请号：US15045687

申请日：2016-02-17

Applicant: Infineon Technologies AG

Inventor： Ngoc-Hoa Huynh ,  Franz-Xaver Muehlbauer ,  Claus Waechter ,  Veronika Huber ,  Dominic Maier ,  Thomas Kilger ,  Saverio Trotta ,  Ashutosh Baheti ,  Georg Meyer-Berg ,  Maciej Wojnowski

IPC: H01L23/498 ,  H01L23/367 ,  H01L21/56 ,  H01L23/31

CPC classification number: H01L23/49822 ,  H01L21/56 ,  H01L23/3114 ,  H01L23/3672 ,  H01L23/3677 ,  H01L23/49816 ,  H01L23/5389 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/73267 ,  H01L2924/18162 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01Q9/265 ,  H01Q9/285 ,  H01Q21/061 ,  H01Q21/065

Abstract: A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. The semiconductor device includes a dielectric layer and an antenna on the dielectric layer. The dielectric layer is between the antenna and the semiconductor chip.

公开(公告)号：US20160297672A1

公开(公告)日：2016-10-13

申请号：US14684815

申请日：2015-04-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Franz-Xaver Muehlbauer ,  Dominic Maier ,  Thomas Kilger

IPC: B81B7/00 ,  B81C1/00

Abstract: A semiconductor device having a lid, and method of making a semiconductor device having a lid is disclosed. The semiconductor device includes a substrate. A device is positioned at the substrate. A lid made of a semiconductor material is positioned over the device to form a protective cavity about the device. The lid is formed using a semiconductor process. In other examples, the lid may be made of a nonconductive material, such as a polymer material. The lids may be formed as part of a batch process.

Abstract translation: 本发明公开了一种具有盖的半导体器件和制造具有盖的半导体器件的方法。 半导体器件包括衬底。 设备位于基板上。 由半导体材料制成的盖子位于该装置上方以形成围绕该装置的保护腔。 使用半导体工艺形成盖。 在其他示例中，盖可以由非导电材料制成，例如聚合物材料。 盖可以形成为批处理的一部分。