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    TiOx Based Selector Element
    1.
    发明申请
    TiOx Based Selector Element 有权
    基于TiOx的选择元件

    公开(公告)号：US20150179933A1

    公开(公告)日：2015-06-25

    申请号：US14136365

    申请日：2013-12-20

    Applicant: Intermolecular, Inc.

    Inventor： Monica Sawkar Mathur ,  Venkat Ananthan ,  Mark Clark ,  Prashant B. Phatak

    IPC: H01L45/00

    CPC classification number: H01L27/2418 ,  H01L27/2463 ,  H01L45/00 ,  H01L45/08

    Abstract: Control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on a single dielectric layer or on a multilayer dielectric stack.

    Abstract translation: 公开了可适用于非易失性存储器件应用的控制元件。 控制元件可以在低电压下具有低漏电流，以减少非选定器件的潜行电流路径，以及高电压下的高泄漏电流，以最大限度地减少器件切换期间的电压降。 控制元件可以基于单个电介质层或多层电介质叠层。

    Current Selector for Non-Volatile Memory in a Cross Bar Array Based on Defect and Band Engineering Metal-Dielectric-Metal Stacks
    5.
    发明申请
    Current Selector for Non-Volatile Memory in a Cross Bar Array Based on Defect and Band Engineering Metal-Dielectric-Metal Stacks 审中-公开
    基于缺陷和带工程金属电介质金属堆栈的横向阵列中非易失性存储器的电流选择器

    公开(公告)号：US20140264252A1

    公开(公告)日：2014-09-18

    申请号：US14294519

    申请日：2014-06-03

    Applicant: Intermolecular, Inc.

    Inventor： Imran Hashim ,  Venkat Ananthan ,  Tony P. Chiang ,  Prashant B. Phatak

    IPC: H01L27/24 ,  H01L29/872

    CPC classification number: H01L27/2418 ,  H01L27/2409 ,  H01L29/872 ,  H01L45/10

    Abstract: Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. In some embodiments, the selector device can include a first electrode, a tri-layer dielectric layer, and a second electrode. The tri-layer dielectric layer can include a high leakage dielectric layer sandwiched between two lower leakage dielectric layers. The low leakage layers can function to restrict the current flow across the selector device at low voltages. The high leakage dielectric layer can function to enhance the current flow across the selector device at high voltages.

    Abstract translation: 可适用于存储器件应用的选择器器件可在低电压下具有低漏电流，以减少非选定器件的漏电流路径，以及高电压下的高泄漏电流，以最大限度地减少器件切换期间的电压降。 在一些实施例中，选择器装置可以包括第一电极，三层电介质层和第二电极。 三层电介质层可以包括夹在两个较低的漏电介质层之间的高泄漏电介质层。 低泄漏层可以起到限制低电压下选择器装置的电流的作用。 高泄漏电介质层可以用于在高电压下增强选择器装置上的电流。

    Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
    6.
    发明授权
    Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks 有权
    基于缺陷和带工程金属 - 电介质金属叠层的交叉条阵列中的非易失性存储器的当前选择器

    公开(公告)号：US09397141B2

    公开(公告)日：2016-07-19

    申请号：US14294519

    申请日：2014-06-03

    Applicant: Intermolecular, Inc.

    Inventor： Imran Hashim ,  Venkat Ananthan ,  Tony P. Chiang ,  Prashant B. Phatak

    IPC: H01L45/00 ,  H01L47/00 ,  H01L27/24 ,  H01L29/872

    CPC classification number: H01L27/2418 ,  H01L27/2409 ,  H01L29/872 ,  H01L45/10

    Abstract: Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. In some embodiments, the selector device can include a first electrode, a tri-layer dielectric layer, and a second electrode. The tri-layer dielectric layer can include a high leakage dielectric layer sandwiched between two lower leakage dielectric layers. The low leakage layers can function to restrict the current flow across the selector device at low voltages. The high leakage dielectric layer can function to enhance the current flow across the selector device at high voltages.

    Abstract translation: 可适用于存储器件应用的选择器器件可在低电压下具有低漏电流，以减少非选定器件的漏电流路径，以及高电压下的高泄漏电流，以最大限度地减少器件切换期间的电压降。 在一些实施例中，选择器装置可以包括第一电极，三层电介质层和第二电极。 三层电介质层可以包括夹在两个较低的漏电介质层之间的高泄漏电介质层。 低泄漏层可以起到限制低电压下选择器装置的电流的作用。 高泄漏电介质层可以用于在高电压下增强选择器装置上的电流。

    Method of Forming an Asymmetric MIMCAP or a Schottky Device as a Selector Element for a Cross-Bar Memory Array
    9.
    发明申请
    Method of Forming an Asymmetric MIMCAP or a Schottky Device as a Selector Element for a Cross-Bar Memory Array 有权
    形成不对称MIMCAP或肖特基器件作为横杆存储器阵列的选择元件的方法

    公开(公告)号：US20140175603A1

    公开(公告)日：2014-06-26

    申请号：US13722885

    申请日：2012-12-20

    Applicant: INTERMOLECULAR, INC.

    Inventor： Venkat Ananthan ,  Imran Hashim ,  Prashant B. Phatak

    IPC: H01L49/02

    CPC classification number: H01L27/2418 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L28/40 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1633

    Abstract: MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes. The MIMCAP diode can include a low defect dielectric layer, a high defect dielectric layer, sandwiched between two electrodes having different work function values.

    Abstract translation: 提供了可适用于存储器件应用的MIMCAP器件，例如用于交叉点存储器阵列的电流选择器装置。 与MIMCAP隧道二极管相比，MIMCAP器件与肖特基二极管相比可以具有更低的热量预算，并且可控制的较低势垒高度和较低的串联电阻。 MIMCAP二极管可以包括夹在具有不同功函数值的两个电极之间的低缺陷电介质层，高缺陷电介质层。

    TiOx based selector element
    10.
    发明授权
    TiOx based selector element 有权
    基于TiOx的选择元件

    公开(公告)号：US09443906B2

    公开(公告)日：2016-09-13

    申请号：US14136365

    申请日：2013-12-20

    Applicant: Intermolecular, Inc.

    Inventor： Monica Sawkar Mathur ,  Venkat Ananthan ,  Mark Clark ,  Prashant B. Phatak

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L27/2418 ,  H01L27/2463 ,  H01L45/00 ,  H01L45/08

    Abstract: Control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on a single dielectric layer or on a multilayer dielectric stack.

    Abstract translation: 公开了可适用于非易失性存储器件应用的控制元件。 控制元件可以在低电压下具有低漏电流，以减少非选定器件的潜行电流路径，以及高电压下的高泄漏电流，以最大限度地减少器件切换期间的电压降。 控制元件可以基于单个电介质层或多层电介质叠层。

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