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公开(公告)号：US09613866B2
公开(公告)日：2017-04-04
申请号：US15155474
申请日：2016-05-16
发明人： Takashi Ando , Aritra Dasgupta , Oleg Gluschenkov , Balaji Kannan , Unoh Kwon
IPC分类号： H01L21/20 , H01L21/8234 , H01L21/02 , H01L21/225 , H01L27/088 , H01L29/51 , H01L21/8238
CPC分类号： H01L29/513 , H01L21/022 , H01L21/02255 , H01L21/0228 , H01L21/02356 , H01L21/2636 , H01L21/268 , H01L21/28185 , H01L21/28194 , H01L21/28229 , H01L21/823412 , H01L21/823462 , H01L21/823857 , H01L27/088 , H01L29/42364 , H01L29/511 , H01L29/517 , H01L29/518
摘要： Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.
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公开(公告)号：US09859121B2
公开(公告)日：2018-01-02
申请号：US14753954
申请日：2015-06-29
发明人： Aritra Dasgupta , Oleg Gluschenkov
IPC分类号： H01L21/28 , H01L21/268 , H01L29/51
CPC分类号： H01L21/28176 , H01L21/268 , H01L29/513 , H01L29/517
摘要： Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.
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公开(公告)号：US09613870B2
公开(公告)日：2017-04-04
申请号：US14755829
申请日：2015-06-30
发明人： Takashi Ando , Aritra Dasgupta , Oleg Gluschenkov , Balaji Kannan , Unoh Kwon
IPC分类号： H01L29/51 , H01L21/8234 , H01L29/423 , H01L27/088 , H01L21/28 , H01L21/263
CPC分类号： H01L29/513 , H01L21/022 , H01L21/02255 , H01L21/0228 , H01L21/02356 , H01L21/2636 , H01L21/268 , H01L21/28185 , H01L21/28194 , H01L21/28229 , H01L21/823412 , H01L21/823462 , H01L21/823857 , H01L27/088 , H01L29/42364 , H01L29/511 , H01L29/517 , H01L29/518
摘要： Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.
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公开(公告)号：US20160181353A1
公开(公告)日：2016-06-23
申请号：US14572974
申请日：2014-12-17
发明人： Takashi Ando , Eduard A. Cartier , Michael P. Chudzik , Aritra Dasgupta , Herbert L. Ho , Donghun Kang , Rishikesh Krishnan , Vijay Narayanan , Kern Rim
CPC分类号： H01L21/02365 , H01G4/005 , H01L21/02178 , H01L21/02617 , H01L21/20 , H01L21/3221 , H01L23/26 , H01L27/10861 , H01L27/1087 , H01L28/60 , H01L28/90 , H01L29/66181 , H01L2924/0002 , H01L2924/00
摘要： A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.
摘要翻译： 一种包括在绝缘层和衬底之间的深沟槽电容器的绝缘层的一侧上形成氧吸气层的方法，所述吸氧层包括含铝化合物，并且在绝缘层的顶部上沉积内电极， 内部电极包括金属。
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公开(公告)号：US09997610B2
公开(公告)日：2018-06-12
申请号：US15417464
申请日：2017-01-27
发明人： Takashi Ando , Aritra Dasgupta , Oleg Gluschenkov , Balaji Kannan , Unoh Kwon
IPC分类号： H01L29/51 , H01L27/088 , H01L21/8238
CPC分类号： H01L29/513 , H01L21/022 , H01L21/02255 , H01L21/0228 , H01L21/02356 , H01L21/2636 , H01L21/268 , H01L21/28185 , H01L21/28194 , H01L21/28229 , H01L21/823412 , H01L21/823462 , H01L21/823857 , H01L27/088 , H01L29/42364 , H01L29/511 , H01L29/517 , H01L29/518
摘要： Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.
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公开(公告)号：US09997361B2
公开(公告)日：2018-06-12
申请号：US15417477
申请日：2017-01-27
发明人： Takashi Ando , Aritra Dasgupta , Oleg Gluschenkov , Balaji Kannan , Unoh Kwon
IPC分类号： H01L21/8234 , H01L21/28 , H01L21/02 , H01L21/268 , H01L29/51 , H01L21/8238
CPC分类号： H01L29/513 , H01L21/022 , H01L21/02255 , H01L21/0228 , H01L21/02356 , H01L21/2636 , H01L21/268 , H01L21/28185 , H01L21/28194 , H01L21/28229 , H01L21/823412 , H01L21/823462 , H01L21/823857 , H01L27/088 , H01L29/42364 , H01L29/511 , H01L29/517 , H01L29/518
摘要： Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.
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公开(公告)号：US09911597B2
公开(公告)日：2018-03-06
申请号：US15595503
申请日：2017-05-15
发明人： Takashi Ando , Eduard A. Cartier , Michael P. Chudzik , Aritra Dasgupta , Herbert L. Ho , Donghun Kang , Rishikesh Krishnan , Vijay Narayanan , Kern Rim
IPC分类号： H01L29/66 , H01L21/02 , H01L21/322 , H01L21/20 , H01G4/005 , H01L27/108 , H01L49/02
CPC分类号： H01L21/02365 , H01G4/005 , H01L21/02178 , H01L21/02617 , H01L21/20 , H01L21/3221 , H01L23/26 , H01L27/10861 , H01L27/1087 , H01L28/60 , H01L28/90 , H01L29/66181 , H01L2924/0002 , H01L2924/00
摘要： A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.
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公开(公告)号：US11201061B2
公开(公告)日：2021-12-14
申请号：US16552547
申请日：2019-08-27
发明人： Aritra Dasgupta , Oleg Gluschenkov
IPC分类号： H01L21/28 , H01L21/268 , H01L29/51
摘要： Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.
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公开(公告)号：US10553439B2
公开(公告)日：2020-02-04
申请号：US15819092
申请日：2017-11-21
发明人： Aritra Dasgupta , Oleg Gluschenkov
IPC分类号： H01L21/268 , H01L21/28 , H01L29/51
摘要： Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.
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公开(公告)号：US20170250073A1
公开(公告)日：2017-08-31
申请号：US15595503
申请日：2017-05-15
发明人： Takashi Ando , Eduard A. Cartier , Michael P. Chudzik , Aritra Dasgupta , Herbert L. Ho , Donghun Kang , Rishikesh Krishnan , Vijay Narayanan , Kern Rim
IPC分类号： H01L21/02 , H01L21/20 , H01G4/005 , H01L21/322
CPC分类号： H01L21/02365 , H01G4/005 , H01L21/02178 , H01L21/02617 , H01L21/20 , H01L21/3221 , H01L23/26 , H01L27/10861 , H01L27/1087 , H01L28/60 , H01L28/90 , H01L29/66181 , H01L2924/0002 , H01L2924/00
摘要： A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.
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