公开(公告)号：US09824930B2

公开(公告)日：2017-11-21

申请号：US15232895

申请日：2016-08-10

申请人： International Business Machines Corporation

发明人： Takashi Ando ,  Hemanth Jagannathan ,  Balaji Kannan ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Rekha Rajaram

IPC分类号： H01L21/76 ,  H01L21/8234 ,  H01L21/3213 ,  H01L21/28 ,  H01L21/321 ,  H01L21/033 ,  H01L21/225 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/324 ,  H01L29/66 ,  H01L29/49 ,  H01L21/8238 ,  H01L21/027 ,  H01L21/02 ,  H01L29/51

CPC分类号： H01L21/823462 ,  H01L21/02321 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/225 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28229 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/32115 ,  H01L21/32133 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/32139 ,  H01L21/324 ,  H01L21/823437 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： A method of fabricating advanced node field effect transistors using a replacement metal gate process. The method includes dopant a high-k dielectric directly or indirectly by using layers composed of multi-layer thin film stacks, or in other embodiments, by a single blocking layer. By taking advantage of unexpected etch selectivity of the multi-layer stack or the controlled etch process of a single layer stack, etch damage to the high-k may be avoided and work function metal thicknesses can be tightly controlled which in turn allows field effect transistors with low Tinv (inverse of gate capacitance) mismatch.

公开(公告)号：US20160351452A1

公开(公告)日：2016-12-01

申请号：US15232895

申请日：2016-08-10

申请人： International Business Machines Corporation

发明人： Takashi Ando ,  Hemanth Jagannathan ,  Balaji Kannan ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Rekha Rajaram

IPC分类号： H01L21/8234 ,  H01L21/033 ,  H01L21/225 ,  H01L29/51 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/66 ,  H01L21/28

CPC分类号： H01L21/823462 ,  H01L21/02321 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/225 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28229 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/32115 ,  H01L21/32133 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/32139 ,  H01L21/324 ,  H01L21/823437 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： A method of fabricating advanced node field effect transistors using a replacement metal gate process. The method includes dopant a high-k dielectric directly or indirectly by using layers composed of multi-layer thin film stacks, or in other embodiments, by a single blocking layer. By taking advantage of unexpected etch selectivity of the multi-layer stack or the controlled etch process of a single layer stack, etch damage to the high-k may be avoided and work function metal thicknesses can be tightly controlled which in turn allows field effect transistors with low Tiny (inverse of gate capacitance) mismatch.

摘要翻译： 使用替代金属栅极工艺制造先进节点场效应晶体管的方法。 该方法通过使用由多层薄膜堆叠构成的层，或者在其它实施方案中通过单个阻挡层直接或间接地包括掺杂剂高k电介质。 通过利用多层堆叠的意想不到的蚀刻选择性或单层堆叠的受控蚀刻工艺，可以避免对高k的蚀刻损伤，并且可以严格控制功函数金属厚度，这又可以实现场效应晶体管 具有低Tiny（栅极电容的倒数）失配。

公开(公告)号：US09330938B2

公开(公告)日：2016-05-03

申请号：US14340068

申请日：2014-07-24

申请人： International Business Machines Corporation

发明人： Takashi Ando ,  Hemanth Jagannathan ,  Balaji Kannan ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Rekha Rajaram

IPC分类号： H01L21/76 ,  H01L21/3213 ,  H01L21/28 ,  H01L21/321

CPC分类号： H01L21/823462 ,  H01L21/02321 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/225 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28229 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/32115 ,  H01L21/32133 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/32139 ,  H01L21/324 ,  H01L21/823437 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： A method of fabricating advanced node field effect transistors using a replacement metal gate process. The method includes dopant a high-k dielectric directly or indirectly by using layers composed of multi-layer thin film stacks, or in other embodiments, by a single blocking layer. By taking advantage of unexpected etch selectivity of the multi-layer stack or the controlled etch process of a single layer stack, etch damage to the high-k may be avoided and work function metal thicknesses can be tightly controlled which in turn allows field effect transistors with low Tinv (inverse of gate capacitance) mismatch.

摘要翻译： 使用替代金属栅极工艺制造先进节点场效应晶体管的方法。 该方法通过使用由多层薄膜堆叠构成的层，或者在其它实施方案中通过单个阻挡层直接或间接地包括掺杂剂高k电介质。 通过利用多层堆叠的意想不到的蚀刻选择性或单层堆叠的受控蚀刻工艺，可以避免对高k的蚀刻损伤，并且可以严格控制功函数金属厚度，这又可以实现场效应晶体管 具有低Tinv（栅极电容的倒数）不匹配。

公开(公告)号：US20160027664A1

公开(公告)日：2016-01-28

申请号：US14340068

申请日：2014-07-24

申请人： International Business Machines Corporation

发明人： Takashi Ando ,  Hemanth Jagannathan ,  Balaji Kannan ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Rekha Rajaram

IPC分类号： H01L21/3213 ,  H01L21/321 ,  H01L21/28

CPC分类号： H01L21/823462 ,  H01L21/02321 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/225 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28229 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/32115 ,  H01L21/32133 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/32139 ,  H01L21/324 ,  H01L21/823437 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： A method of fabricating advanced node field effect transistors using a replacement metal gate process. The method includes dopant a high-k dielectric directly or indirectly by using layers composed of multi-layer thin film stacks, or in other embodiments, by a single blocking layer. By taking advantage of unexpected etch selectivity of the multi-layer stack or the controlled etch process of a single layer stack, etch damage to the high-k may be avoided and work function metal thicknesses can be tightly controlled which in turn allows field effect transistors with low Tiny (inverse of gate capacitance) mismatch.

公开(公告)号：US09997610B2

公开(公告)日：2018-06-12

申请号：US15417464

申请日：2017-01-27

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Takashi Ando ,  Aritra Dasgupta ,  Oleg Gluschenkov ,  Balaji Kannan ,  Unoh Kwon

IPC分类号： H01L29/51 ,  H01L27/088 ,  H01L21/8238

CPC分类号： H01L29/513 ,  H01L21/022 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/2636 ,  H01L21/268 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28229 ,  H01L21/823412 ,  H01L21/823462 ,  H01L21/823857 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

摘要： Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.

公开(公告)号：US09997361B2

公开(公告)日：2018-06-12

申请号：US15417477

申请日：2017-01-27

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Takashi Ando ,  Aritra Dasgupta ,  Oleg Gluschenkov ,  Balaji Kannan ,  Unoh Kwon

IPC分类号： H01L21/8234 ,  H01L21/28 ,  H01L21/02 ,  H01L21/268 ,  H01L29/51 ,  H01L21/8238

CPC分类号： H01L29/513 ,  H01L21/022 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/2636 ,  H01L21/268 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28229 ,  H01L21/823412 ,  H01L21/823462 ,  H01L21/823857 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

摘要： Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure includes a high-k gate stack with a high-k bilayer or nanolaminate where a bottom portion of the bilayer is crystallized while a top portion of the bilayer is amorphous.

公开(公告)号：US09721842B2

公开(公告)日：2017-08-01

申请号：US15058309

申请日：2016-03-02

申请人： International Business Machines Corporation

发明人： Takashi Ando ,  Hemanth Jagannathan ,  Balaji Kannan ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Rekha Rajaram

IPC分类号： H01L21/76 ,  H01L21/8234 ,  H01L21/3213 ,  H01L21/28 ,  H01L21/321 ,  H01L21/033 ,  H01L21/225 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/324 ,  H01L29/66 ,  H01L29/49 ,  H01L21/8238 ,  H01L21/027 ,  H01L21/02 ,  H01L29/51

CPC分类号： H01L21/823462 ,  H01L21/02321 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/225 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28229 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/32115 ,  H01L21/32133 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/32139 ,  H01L21/324 ,  H01L21/823437 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： A method of fabricating advanced node field effect transistors using a replacement metal gate process. The method includes dopant a high-k dielectric directly or indirectly by using layers composed of multi-layer thin film stacks, or in other embodiments, by a single blocking layer. By taking advantage of unexpected etch selectivity of the multi-layer stack or the controlled etch process of a single layer stack, etch damage to the high-k may be avoided and work function metal thicknesses can be tightly controlled which in turn allows field effect transistors with low Tinv (inverse of gate capacitance) mismatch.

公开(公告)号：US09515164B2

公开(公告)日：2016-12-06

申请号：US14198976

申请日：2014-03-06

申请人： International Business Machines Corporation

发明人： Takashi Ando ,  Balaji Kannan ,  Siddarth Krishnan ,  Unoh Kwon ,  Shahab Siddiqui

IPC分类号： H01L29/66 ,  H01L21/28 ,  H01L29/51 ,  H01L29/49 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L21/823828 ,  H01L21/225 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28238 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/092 ,  H01L29/42372 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

摘要： A method for forming a replacement metal gate structure sharing a single work function metal for both the N-FET and the P-FET gates. The method oppositely dopes a high-k material of the N-FET and P-FET gate, respectively, using a single lithography step. The doping allows use of a single work function metal which in turn provides more space in the metal gate opening so that a bulk fill material may occupy more volume of the opening resulting in a lower resistance gate.

摘要翻译： 一种用于形成与N-FET和P-FET栅极共用单个功函数金属的替代金属栅极结构的方法。 该方法分别使用单个光刻步骤来掺杂N-FET和P-FET栅极的高k材料。 掺杂允许使用单个功函金属，其又在金属栅极开口中提供更多的空间，使得块体填充材料可占据更多开口的体积，导致较低电阻门。

公开(公告)号：US09472419B2

公开(公告)日：2016-10-18

申请号：US14919796

申请日：2015-10-22

申请人： International Business Machines Corporation

发明人： Takashi Ando ,  Hemanth Jagannathan ,  Balaji Kannan ,  Siddarth A. Krishnan ,  Unoh Kwon ,  Rekha Rajaram

IPC分类号： H01L21/76 ,  H01L21/3213 ,  H01L21/28 ,  H01L21/321 ,  H01L21/033 ,  H01L21/225 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/324 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51

CPC分类号： H01L21/823462 ,  H01L21/02321 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/225 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28229 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/32115 ,  H01L21/32133 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/32139 ,  H01L21/324 ,  H01L21/823437 ,  H01L21/82345 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： A method of fabricating advanced node field effect transistors using a replacement metal gate process. The method includes dopant a high-k dielectric directly or indirectly by using layers composed of multi-layer thin film stacks, or in other embodiments, by a single blocking layer. By taking advantage of unexpected etch selectivity of the multi-layer stack or the controlled etch process of a single layer stack, etch damage to the high-k may be avoided and work function metal thicknesses can be tightly controlled which in turn allows field effect transistors with low Tinv (inverse of gate capacitance) mismatch.

摘要翻译： 使用替代金属栅极工艺制造先进节点场效应晶体管的方法。 该方法通过使用由多层薄膜堆叠构成的层，或者在其它实施方案中通过单个阻挡层直接或间接地包括掺杂剂高k电介质。 通过利用多层堆叠的意想不到的蚀刻选择性或单层堆叠的受控蚀刻工艺，可以避免对高k的蚀刻损伤，并且可以严格控制功函数金属厚度，这又可以实现场效应晶体管 具有低Tinv（栅极电容的倒数）不匹配。

公开(公告)号：US20160005831A1

公开(公告)日：2016-01-07

申请号：US14320831

申请日：2014-07-01

申请人： International Business Machines Corporation

发明人： Takashi Ando ,  Min Dai ,  Balaji Kannan ,  Siddarth A. Krishnan ,  Unoh Kwon

IPC分类号： H01L29/49 ,  H01L21/8234 ,  H01L27/088

CPC分类号： H01L21/823412 ,  H01L21/324 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/4966 ,  H01L29/785

摘要： Selective deposition of a silicon-germanium surface layer on semiconductor surfaces can be employed to provide two types of channel regions for field effect transistors. Anneal of an adjustment oxide material on a stack of a silicon-based gate dielectric and a high dielectric constant (high-k) gate dielectric can be employed to form an interfacial adjustment oxide layer contacting a subset of channel regions. Oxygen deficiency can be induced in portions of the high-k dielectric layer overlying the interfacial adjustment oxide layer by deposition of a first work function metallic material layer and a capping layer and a subsequent anneal. Oxygen deficiency can be selectively removed by physically exposing portions of the high-k dielectric layer. A second work function metallic material layer and a gate conductor layer can be deposited and planarized to form gate electrodes that provide multiple effective work functions.

摘要翻译： 硅 - 锗表面层在半导体表面上的选择性沉积可用于为场效应晶体管提供两种类型的沟道区。 在硅基栅极电介质和高介电常数（高k）栅极电介质的堆叠上的调整氧化物材料的退火可以用于形成接触通道区域子集的界面调整氧化物层。 通过沉积第一功函数金属材料层和封盖层和随后的退火，可以在覆盖界面调整氧化物层的高k电介质层的部分中诱导氧缺乏。 可以通过物理暴露高k电介质层的部分来选择性地去除氧缺乏。 可以将第二功函数金属材料层和栅极导体层沉积并平坦化以形成提供多个有效功函数的栅电极。