公开(公告)号：US5946284A

公开(公告)日：1999-08-31

申请号：US905075

申请日：1997-08-01

Applicant: Il-sub Chung ,  In-kyeong Yoo

Inventor： Il-sub Chung ,  In-kyeong Yoo

IPC: G11B7/24 ,  B81C99/00 ,  G11B9/00 ,  G11B9/02 ,  G11B9/14 ,  G11B11/08 ,  G11B13/06 ,  G11B7/00

CPC classification number: B82Y10/00 ,  G11B9/02 ,  G11B9/14 ,  G11B9/1409 ,  G11B13/06

Abstract: In a disk apparatus using a ferroelectric thin film coated on the surface of a disk as a recording medium, an electrode layer is formed on a substrate and the ferroelectric thin film is formed on the electrode layer, thereby forming a disk. A head is installed on an arm over the disk. The head has a reflector, and a microtip electrode, for creating or erasing polarization of the ferroelectric thin film. An optical system is provided over the head. The head moves towards or away from the disk depending on recorded information (polarization direction), and the movement is read by the optical system. Therefore, a low-priced disk apparatus, capable of freely recording and reproducing information semipermanently, is realized.

Abstract translation: 在将作为记录介质的盘表面上涂敷铁电薄膜的磁盘装置中，在基板上形成电极层，在电极层上形成强电介质薄膜，形成磁盘。 头部安装在磁盘上的手臂上。 头部具有用于产生或擦除铁电薄膜的极化的反射器和微尖端电极。 一个光学系统设置在头部上。 根据记录的信息（偏振方向），磁头朝向或远离盘移动，并且光学系统读取移动。 因此，实现了能够半自动地自动记录和再现信息的低价盘装置。

公开(公告)号：US6080593A

公开(公告)日：2000-06-27

申请号：US123424

申请日：1998-07-28

Applicant: Dae-sig Kim ,  Il-sub Chung

Inventor： Dae-sig Kim ,  Il-sub Chung

IPC: H01L21/8247 ,  H01B3/12 ,  H01L21/28 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L29/92 ,  H01L21/00

CPC classification number: H01L21/28291 ,  H01L29/78391

Abstract: A method of manufacturing a ferroelectric memory of MFS- or MFIS-type includes the steps of forming on a substrate an insulating layer for preventing reaction at an interface between a ferroelectric material and a silicon substrate, forming a ferroelectric layer on the insulating layer, reacting a material of the insulating layer with a material of the ferroelectric layer, to transform the insulating layer into part of the ferroelectric layer, and forming an electrode on the ferroelectric layer. Since the insulating layer is formed between a substrate and a ferroelectric material, undesirable reaction between the two substances is prevented. The insulating layer is completely absorbed into the ferroelectric layer due to diffusion during deposition of the ferroelectric layer, to form an MFS-type ferroelectric memory. When some of the insulating layer remains, the ferroelectric memory becomes an MFIS-type. However, since the remaining insulating layer, which corresponds to the insulating layer of the MFIS-type ferroelectric memory, is very thin. Accordingly, characteristics of the MFIS-type ferroelectric memory improve.

Abstract translation: 制造MFS-或MFIS型铁电存储器的方法包括以下步骤：在基板上形成用于防止在铁电材料和硅基板之间的界面处的反应的绝缘层，在绝缘层上形成铁电层，使绝缘层反应 使用具有铁电层的材料的绝缘层的材料，将绝缘层变换为铁电层的一部分，并在铁电层上形成电极。 由于绝缘层形成在基板和铁电体材料之间，因此防止了两种物质之间的不期望的反应。 由于铁电层的沉积期间的扩散，绝缘层被完全吸收到铁电体层中，形成MFS型铁电体存储器。 当一部分绝缘层残留时，铁电存储器成为MFIS型。 然而，由于与MFIS型铁电体存储器的绝缘层相对应的剩余绝缘层非常薄。 因此，MFIS型铁电体存储器的特性提高。

公开(公告)号：US6048737A

公开(公告)日：2000-04-11

申请号：US707033

申请日：1996-09-03

Applicant: Il-sub Chung ,  In-kyung Yoo ,  Chi-won Chung ,  Seshu B. Desu

Inventor： Il-sub Chung ,  In-kyung Yoo ,  Chi-won Chung ,  Seshu B. Desu

IPC: C30B29/16 ,  H01G4/33 ,  H01G7/06 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8247 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L21/00

CPC classification number: H01L28/56

Abstract: A ferroelectric capacitor taking a multilayer structure wherein a conductive oxide layer which is formed between a metal electrode and a ferroelectric layer, capable of enhancing the fatigue behavior in addition to reducing the leakage current. The multilayer structure can be fabricated by depositing a silicon oxide (SiO.sub.2) layer, an adhesive layer, a bottom metal layer, a lower conductive oxide layer, a ferroelectric layer, an upper conductive oxide layer and a top metal electrode layer are deposited over a silicon substrate, in sequence.

Abstract translation: 一种具有多层结构的铁电电容器，其中形成在金属电极和铁电体层之间的导电氧化物层除了减少漏电流之外还能够增强疲劳特性。 可以通过沉积氧化硅（SiO 2）层，粘合剂层，底部金属层，下部导电氧化物层，铁电体层，上部导电氧化物层和顶部金属电极层来制造多层结构 硅衬底。

公开(公告)号：US06479848B2

公开(公告)日：2002-11-12

申请号：US09756721

申请日：2001-01-10

Applicant: Sang-jin Park ,  Jung-hyun Sok ,  Il-sub Chung

Inventor： Sang-jin Park ,  Jung-hyun Sok ,  Il-sub Chung

IPC: H01L2976

CPC classification number: G11C11/15

Abstract: A magnetic random access memory with write and read circuits using magnetic tunnel junction (MTJ) devices wherein MTJs are arranged at cross points of word lines and read bit lines to form memory cells. After write bit lines and read bit lines are arranged parallel to each other, current bypass paths are formed allowing current to bypass the side and bottom of the MTJ. Thus, an electric field having intensity enough to change the magnetization direction of the MTJ, is applied only to each selected cell. In a write operation, the magnetization direction of a free layer in the MTJ is formed to be parallel or antiparallel to the magnetization direction of a pinned ferromagnetic layer by the current passing through the word line and the current bypass path.

Abstract translation: 具有使用磁隧道结（MTJ）器件的写入和读取电路的磁性随机存取存储器，其中MTJ被布置在字线和读取位线的交叉点以形成存储器单元。 在写入位线和读取位线彼此平行布置之后，形成电流旁路路径，允许电流绕过MTJ的侧面和底部。 因此，具有足以改变MTJ的磁化方向的强度的电场仅施加到每个选定的单元。 在写入操作中，MTJ中的自由层的磁化方向通过通过字线和当前旁路路径的电流形成为与被钉扎的铁磁层的磁化方向平行或反平行。

公开(公告)号：US5892705A

公开(公告)日：1999-04-06

申请号：US841695

申请日：1997-04-30

Applicant: Il-sub Chung

Inventor： Il-sub Chung

IPC: G11C14/00 ,  G11C11/22

CPC classification number: G11C11/22

Abstract: An apparatus and method for maintaining non-volatility in a ferroelectric random access memory (FRAM), in which recorded information is maintained during a power failure, are provided. The apparatus for maintaining non-volatility includes a control portion for a writeback function, a power source voltage sensing portion for sensing a failure in the power source voltage and providing a power failure signal to the control portion such that the control portion completes a writeback cycle before power failure. The power source voltage sensing portion generates a control signal by sensing a failure in power source voltage, and provides a power failure signal to the control portion such that a writeback process is completed before power failure, thereby maintaining non-volatility in the memory device. That is, loss of non-volatility in the memory device occurring during a power failure can be prevented by increasing the reliability of products.

Abstract translation: 提供了在电源故障期间保持记录信息的铁电随机存取存储器（FRAM）中保持非易失性的装置和方法。 用于维持非挥发性的装置包括用于回写功能的控制部分，用于感测电源电压故障的电源电压感测部分，并向控制部分提供停电信号，使得控制部分完成写回循环 停电前 电源电压检测部分通过感测电源电压的故障来产生控制信号，并且向控制部分提供电源故障信号，使得在电源故障之前完成回写处理，从而保持存储器件的非挥发性。 也就是说，可以通过提高产品的可靠性来防止在停电期间发生的存储器件中的非挥发性的损失。

公开(公告)号：US5751540A

公开(公告)日：1998-05-12

申请号：US618320

申请日：1996-03-19

Applicant: June-key Lee ,  Il-sub Chung ,  Seshu Babu Desu

Inventor： June-key Lee ,  Il-sub Chung ,  Seshu Babu Desu

IPC: H01L29/92 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01G4/06

CPC classification number: H01L28/75 ,  H01L28/60 ,  H01L28/55

Abstract: A ferroelectric capacitor used as a memory cell in a ferroelectric random access memory (FRAM) is provided. The ferroelectric capacitor includes a substrate, an insulating layer formed on the substrate, a Rh lower electrode provided on the insulating layer, an adhesive layer between the insulating layer and the lower electrode, a ferroelectric layer provided on the lower electrode, and a Rh upper electrode provided on the ferroelectric layer. The Rh used as the electrode material is not affected by diffusion of Si due to its fine structure when compared to a Pt electrode, and has excellent electrical properties due to better electrical conductivity and good heat-transfer properties.

Abstract translation: 提供了用作铁电随机存取存储器（FRAM）中的存储单元的铁电电容器。 铁电电容器包括基板，形成在基板上的绝缘层，设置在绝缘层上的Rh下电极，绝缘层和下电极之间的粘合层，设置在下电极上的铁电层，以及Rh上电极 设置在铁电层上的电极。 与Pt电极相比，用作电极材料的Rh不受其精细结构的Si的扩散的影响，并且由于更好的导电性和良好的传热性能而具有优异的电性能。

公开(公告)号：US5625529A

公开(公告)日：1997-04-29

申请号：US412043

申请日：1995-03-28

Applicant: Wan-in Lee ,  Jun-ki Lee ,  Il-sub Chung ,  Chi-won Chung ,  In-kyung Yoo

Inventor： Wan-in Lee ,  Jun-ki Lee ,  Il-sub Chung ,  Chi-won Chung ,  In-kyung Yoo

IPC: C04B35/46 ,  H01B3/00 ,  H01B3/12 ,  H01G4/12 ,  H01G7/06 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01G4/06

CPC classification number: H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L28/55 ,  Y10T29/435

Abstract: PZT ferroelectric thin films for capacitors comprise a combination of a donor dopant and an acceptor dopant in a total amount of about 0.1 to 8 mole percent of PZT, or Sc alone in an amount of about 0.1 to 5 mole percent. Nb or Ta is employed as a donor dopant, while Sc, Mg or Zn can be used as an acceptor dopant. The presence of a single Sc acceptor dopant, or both an acceptor dopant and a donor dopant, results in increased endurance. Fatigue cycles are increased on the order of about 10.sup.5 relative to dopant-free films. Doping with a single Sc acceptor dopant, or both an acceptor dopant and a donor dopant, reduces coercive field, allowing PZT films to switch at relatively low voltages. PZT thin films of a pure perovskite phase are obtained in which a pyrochlore phase is completely excluded. Pt may be used as an electrode material. The leakage current of PZT films doped with both the acceptor and donor elements are similar to the leakage current level of pure PZT thin films.

Abstract translation: 用于电容器的PZT铁电薄膜包括总量为约0.1至8摩尔％的PZT或Sc单独的施主掺杂剂和受主掺杂剂的组合，其量为约0.1至5摩尔％。 Nb或Ta用作施主掺杂剂，而Sc，Mg或Zn可用作受主掺杂剂。 单个Sc受体掺杂剂或受体掺杂剂和施主掺杂剂两者的存在导致耐久性增加。 相对于不含掺杂剂的膜，疲劳循环增加约为约105。 用单个Sc受体掺杂剂或受体掺杂剂和施主掺杂剂掺杂减少矫顽场，允许PZT膜在相对低的电压下切换。 获得纯钙钛矿相的PZT薄膜，其中完全排除了烧绿石相。 Pt可以用作电极材料。 掺杂受体和施主元素的PZT膜的漏电流类似于纯PZT薄膜的漏电流水平。