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    Inhomogenous Power Semiconductor Devices
    4.
    发明申请
    Inhomogenous Power Semiconductor Devices 审中-公开
    不均衡的功率半导体器件

    公开(公告)号：US20140131766A1

    公开(公告)日：2014-05-15

    申请号：US13678186

    申请日：2012-11-15

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： Tao Hong

    IPC: H01L29/739 ,  H01L29/66

    CPC classification number: H01L29/7397 ,  H01L23/5386 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/66659 ,  H01L29/7395 ,  H01L29/7813 ,  H01L2924/13055

    Abstract: A power semiconductor device is manufactured by forming a power transistor having a plurality of transistor cells on a semiconductor die, and purposely introducing inhomogeneity into the power transistor so that the number of current filaments in the transistor cells with reduced local current density increases and fewer transient avalanche oscillations occur in the power transistor during operation.

    Abstract translation: 通过在半导体管芯上形成具有多个晶体管单元的功率晶体管来制造功率半导体器件，并且有意地将不均匀性引入到功率晶体管中，使得在局部电流密度降低的晶体管单元中的电流丝的数量增加，并且更短的瞬变 操作过程中功率晶体管产生雪崩振荡。

    Semiconductor Package Having Symmetrically Arranged Power Terminals and Method for Producing the Same
    5.
    发明申请
    Semiconductor Package Having Symmetrically Arranged Power Terminals and Method for Producing the Same 审中-公开

    公开(公告)号：US20200035579A1

    公开(公告)日：2020-01-30

    申请号：US16519802

    申请日：2019-07-23

    Applicant: Infineon Technologies AG

    Inventor： Juergen Hoegerl ,  Tao Hong ,  Tino Karczewski ,  Matthias Lassmann ,  Christian Schweikert

    IPC: H01L23/367 ,  H01L23/492 ,  H01L23/373 ,  H01L23/495 ,  H01L23/433 ,  H01L29/16 ,  H01L23/31 ,  H01L21/56 ,  H01L21/52

    Abstract: A double-sided coolable semiconductor package includes an upper electrically conductive element having an outwardly exposed metal surface, a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer arranged between the electrically conductive layers, a first electrically conductive spacer arranged between the upper electrically conductive element and the upper electrically conductive layer, a power semiconductor chip arranged between the upper electrically conductive element and the upper electrically conductive layer, a second electrically conductive spacer arranged between the upper electrically conductive element and the chip, and power terminals arranged along a first side of the package. A second power terminal is arranged between first and third power terminals. The first and third power terminals are configured to apply a first supply voltage. The second power terminal is configured to apply a second supply voltage.

    Inhomogeneous Power Semiconductor Devices
    6.
    发明申请
    Inhomogeneous Power Semiconductor Devices 有权
    不均匀的功率半导体器件

    公开(公告)号：US20150054026A1

    公开(公告)日：2015-02-26

    申请号：US14538954

    申请日：2014-11-12

    Applicant: Infineon Technologies AG

    Inventor： Tao Hong

    IPC: H01L29/739 ,  H01L29/06 ,  H01L29/423

    CPC classification number: H01L29/7397 ,  H01L23/5386 ,  H01L29/0696 ,  H01L29/404 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/66659 ,  H01L29/7395 ,  H01L29/7813 ,  H01L2924/13055

    Abstract: A power semiconductor device includes a power transistor including a plurality of transistor cells on a semiconductor die. At least some of the transistor cells are inhomogeneous by design so that the number of current filaments in the transistor cells with reduced local current density increases and fewer transient avalanche oscillations occur in the power transistor during operation.

    Abstract translation: 功率半导体器件包括在半导体管芯上包括多个晶体管单元的功率晶体管。 至少一些晶体管单元的设计不均匀，使得晶体管单元中具有降低的局部电流密度的电流丝数量增加，并且在操作期间在功率晶体管中发生较少的瞬态雪崩振荡。

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