公开(公告)号：US20160027759A1

公开(公告)日：2016-01-28

申请号：US14773970

申请日：2014-03-24

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Andreas Plößl

IPC: H01L23/00 ,  H01L21/288 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L24/83 ,  H01L21/2855 ,  H01L21/2885 ,  H01L21/76874 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/27444 ,  H01L2224/2745 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29109 ,  H01L2224/29113 ,  H01L2224/29139 ,  H01L2224/29166 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32505 ,  H01L2224/83054 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83359 ,  H01L2224/83539 ,  H01L2224/83825 ,  H01L2224/83902 ,  H01L2224/83948 ,  H01L2924/12041 ,  H01L2924/01083 ,  H01L2924/00012 ,  H01L2924/01322 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method is provided for connecting parts to be joined. A first layer sequence is applied to a first part to be joined. The first layer sequence contains silver. A second layer sequence is applied to a second part to be joined. The second layer sequence contains indium and bismuth. The first layer sequence and the second layer sequence are pressed together at their end faces respectively remote from the first part to be joined and the second part to be joined through application of a joining pressure at a joining temperature which amounts to at most 120° C. for a predetermined joining time. The first layer sequence and the second layer sequence fuse together to form a bonding layer which directly adjoins the first part to be joined and the second part to be joined and the melting temperature of which amounts to at least 260° C.

Abstract translation: 提供了用于连接要连接的部件的方法。 将第一层序列应用于要接合的第一部分。 第一层序列包含银。 将第二层序列应用于待连接的第二部分。 第二层序列包含铟和铋。 第一层序列和第二层序列在其端面处被压在一起，分别远离待接合的第一部分和待连接的第二部分，通过在接合温度下施加接合压力达到至多120℃ 预定的接合时间。 第一层序列和第二层序列熔合在一起形成直接毗邻待接合的第一部分和待接合的第二部分的接合层，其熔融温度等于至少260℃。

公开(公告)号：US20120319261A1

公开(公告)日：2012-12-20

申请号：US13163935

申请日：2011-06-20

Applicant: Cody B. Moody

Inventor： Cody B. Moody

IPC: H01L23/02 ,  H01L21/50

CPC classification number: H01L24/83 ,  H01L21/563 ,  H01L23/10 ,  H01L24/03 ,  H01L24/09 ,  H01L24/29 ,  H01L24/32 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/04026 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05568 ,  H01L2224/26135 ,  H01L2224/29023 ,  H01L2224/29035 ,  H01L2224/29562 ,  H01L2224/2957 ,  H01L2224/29609 ,  H01L2224/29611 ,  H01L2224/29624 ,  H01L2224/29644 ,  H01L2224/29686 ,  H01L2224/32055 ,  H01L2224/32148 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/83054 ,  H01L2224/8309 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83805 ,  H01L2224/83815 ,  H01L2224/83825 ,  H01L2224/83948 ,  H01L2224/94 ,  H01L2924/01032 ,  H01L2924/01322 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: Hermetically sealed semiconductor wafer packages that include a first bond ring on a first wafer facing a complementary surface of a second bond ring on a second wafer. The package includes first and second standoffs of a first material, having a first thickness, formed on a surface of the first bond ring. The package also includes a eutectic alloy (does not have to be eutectic, typically it will be an alloy not specific to the eutectic ratio of the elements) formed from a second material and the first material to create a hermetic seal between the first and second wafer, the eutectic alloy formed by heating the first and second wafers to a temperature above a reflow temperature of the second material and below a reflow temperature of the first material, wherein the eutectic alloy fills a volume between the first and second standoffs and the first and second bond rings, and wherein the standoffs maintain a prespecified distance between the first bond ring and the second bond ring.

Abstract translation: 密封的半导体晶片封装，其包括在第一晶片上的第一结合环，其面向第二晶片上的第二结合环的互补表面。 该封装包括形成在第一结合环的表面上的第一材料的第一和第二间隔，第一和第二间隔具有第一厚度。 该封装还包括共晶合金（不一定是共晶的，通常它是一种不是特定于元素的共晶比的合金），由第二种材料形成，并且第一种材料在第一和第二种之间形成气密封 晶片，通过将第一和第二晶片加热到高于第二材料的回流温度并低于第一材料的回流温度的温度而形成的共晶合金，其中共晶合金填充第一和第二间隙之间的体积， 和第二结合环，并且其中所述支架在所述第一结合环和所述第二结合环之间保持预定的距离。

公开(公告)号：US20170282247A1

公开(公告)日：2017-10-05

申请号：US15475807

申请日：2017-03-31

Applicant: Board of Regents, The University of Texas System

Inventor： Michael A. Cullinan ,  Anil Yuksel ,  Nilabh Kumar Roy

IPC: B22F3/105 ,  B33Y50/02 ,  G06F17/50 ,  B33Y10/00

CPC classification number: B22F7/02 ,  B22F1/0044 ,  B22F3/1055 ,  B22F2003/1056 ,  B22F2003/1057 ,  B22F2003/1059 ,  B22F2999/00 ,  B23K1/0008 ,  B23K2101/36 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  B33Y70/00 ,  B33Y80/00 ,  G06F17/5018 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/563 ,  H01L21/565 ,  H01L21/67115 ,  H01L21/67144 ,  H01L21/6838 ,  H01L23/3135 ,  H01L23/4985 ,  H01L23/544 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2223/54426 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/75261 ,  H01L2224/75901 ,  H01L2224/81007 ,  H01L2224/81054 ,  H01L2224/81132 ,  H01L2224/81192 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/81908 ,  H01L2224/83007 ,  H01L2224/83054 ,  H01L2224/83132 ,  H01L2224/83224 ,  H01L2224/83908 ,  H01L2224/83939 ,  H01L2224/9211 ,  Y02P10/295 ,  B22F1/0018 ,  B22F1/0022

Abstract: Exemplified microscale selective laser sintering (μ-SLS or micro-SLS) systems and methods facilitate modeling of the nanoparticle powder bed by simulating the interactions between particles during the powder spreading operation. In particular, the exemplified methods and system use multiscale modeling techniques to accurately predict the formation and mechanical/electrical properties of parts produced by selective laser sintering of powder beds. Discrete element modeling is used for nanoscale particle interactions by implementing the different forces dominant at nanoscale. A heat transfer analysis is used to predict the sintering of individual particles in the powder beds in order to build up a complete structural model of the parts that are being produced by the SLS process.

公开(公告)号：US20140013595A1

公开(公告)日：2014-01-16

申请号：US13939635

申请日：2013-07-11

Applicant: Infineon Technologies AG

Inventor： Tao Hong

IPC: H01L23/00

CPC classification number: H01L24/89 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/04026 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/27418 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/7511 ,  H01L2224/75251 ,  H01L2224/75315 ,  H01L2224/7532 ,  H01L2224/81005 ,  H01L2224/81209 ,  H01L2224/83054 ,  H01L2224/83055 ,  H01L2224/83093 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83222 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/8381 ,  H01L2224/8384 ,  H01L2224/83851 ,  H01L2924/1203 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15787 ,  Y10T29/49117 ,  Y10T156/10 ,  H01L2924/00

Abstract: A pressure chamber has first and second housing elements and first and second chamber regions. The pressure chamber is loaded with a first part, a second part, a connecting means and a sealing means. The connecting means is arranged in the first chamber region. The loaded pressure chamber is placed into a receiving region. The first housing element is pressed against the second housing element so that the pressure chamber is clamped with the aid of a working cylinder between the working cylinder and a holding frame. In the clamped state, a second gas pressure, which is higher than a first gas pressure in the first chamber region, is generated in the second chamber region. In this way, the first part, the second part and the connecting means are pressed against one another within the pressure chamber.

Abstract translation: 压力室具有第一和第二壳体元件以及第一和第二腔室区域。 压力室装有第一部分，第二部分，连接装置和密封装置。 连接装置设置在第一室区域中。 负载的压力室被放置在接收区域中。 第一壳体元件被压靠在第二壳体元件上，使得压力室借助于在工作缸和保持框架之间的工作缸被夹紧。 在夹紧状态下，在第二室区域中产生高于第一室区域中的第一气体压力的第二气体压力。 以这种方式，第一部分，第二部分和连接装置在压力室内彼此压靠。

公开(公告)号：US20170229415A1

公开(公告)日：2017-08-10

申请号：US15427466

申请日：2017-02-08

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yuchen HSU ,  Daisuke HIRATSUKA

IPC: H01L23/00

CPC classification number: H01L24/29 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/26165 ,  H01L2224/2732 ,  H01L2224/29076 ,  H01L2224/29239 ,  H01L2224/29247 ,  H01L2224/29255 ,  H01L2224/2929 ,  H01L2224/29305 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29499 ,  H01L2224/3201 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/83054 ,  H01L2224/8309 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/83905 ,  H01L2224/92247 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/01049 ,  H01L2924/01031 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: In a method of manufacturing a semiconductor device of one embodiment, support members and a film which is formed of a paste containing metal particles and surrounds the support members are provided above a surface of a base. Then a semiconductor element is provided above the support members and the film. Subsequently, the film is sintered to join the base and the semiconductor element. The support members are formed of a metal which melts at a temperature equal to or below a sintering temperature of the metal particles contained in the paste. The support members support the semiconductor element after the semiconductor element is provided above the support members and the film.

公开(公告)号：US20170025307A1

公开(公告)日：2017-01-26

申请号：US15119304

申请日：2015-01-09

Applicant: SUNEDISON SEMICONDUCTOR LIMITED

Inventor： Michael J. Ries ,  Jeffrey Louis Libbert ,  Charles R. Lottes

IPC: H01L21/762 ,  H01L23/00

CPC classification number: H01L21/76254 ,  H01L21/0455 ,  H01L21/2253 ,  H01L21/2258 ,  H01L21/265 ,  H01L24/83 ,  H01L2224/83054 ,  H01L2224/83085 ,  H01L2224/83236 ,  H01L2224/83893

Abstract: Methods for preparing layered semiconductor structures are disclosed. The methods may involve pretreating an ion-implanted donor wafer by annealing the ion-implanted donor wafer to cause a portion of the ions to out-diffuse prior to wafer bonding. The donor structure may be bonded to a handle structure and cleaved without re-implanting ions into the donor structure.

Abstract translation: 公开了制备层状半导体结构的方法。 所述方法可以包括通过退火离子注入的施主晶片来预处理离子注入的施主晶片，以使得一部分离子在晶片接合之前扩散。 供体结构可以结合到手柄结构并且在不将离子重新注入到供体结构内的情况下被切割。

公开(公告)号：US20150262967A1

公开(公告)日：2015-09-17

申请号：US14640219

申请日：2015-03-06

Applicant: RAYTHEON COMPANY

Inventor： Cody B. Moody

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L24/83 ,  H01L21/563 ,  H01L23/10 ,  H01L24/03 ,  H01L24/09 ,  H01L24/29 ,  H01L24/32 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/04026 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05568 ,  H01L2224/26135 ,  H01L2224/29023 ,  H01L2224/29035 ,  H01L2224/29562 ,  H01L2224/2957 ,  H01L2224/29609 ,  H01L2224/29611 ,  H01L2224/29624 ,  H01L2224/29644 ,  H01L2224/29686 ,  H01L2224/32055 ,  H01L2224/32148 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/83054 ,  H01L2224/8309 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83805 ,  H01L2224/83815 ,  H01L2224/83825 ,  H01L2224/83948 ,  H01L2224/94 ,  H01L2924/01032 ,  H01L2924/01322 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: Hermetically sealed semiconductor wafer packages that include a first bond ring on a first wafer facing a complementary surface of a second bond ring on a second wafer. The package includes first and second standoffs of a first material, having a first thickness, formed on a surface of the first bond ring. The package also includes a eutectic alloy (does not have to be eutectic, typically it will be an alloy not specific to the eutectic ratio of the elements) formed from a second material and the first material to create a hermetic seal between the first and second wafer, the eutectic alloy formed by heating the first and second wafers to a temperature above a reflow temperature of the second material and below a reflow temperature of the first material, wherein the eutectic alloy fills a volume between the first and second standoffs and the first and second bond rings, and wherein the standoffs maintain a prespecified distance between the first bond ring and the second bond ring.

Abstract translation: 密封的半导体晶片封装，其包括在第一晶片上的第一结合环，其面向第二晶片上的第二结合环的互补表面。 该封装包括形成在第一结合环的表面上的第一材料的第一和第二间隔，第一和第二间隔具有第一厚度。 该封装还包括共晶合金（不一定是共晶的，通常它是一种不是特定于元素的共晶比的合金），由第二种材料形成，并且第一种材料在第一和第二种之间形成气密封 晶片，通过将第一和第二晶片加热到高于第二材料的回流温度并低于第一材料的回流温度的温度而形成的共晶合金，其中共晶合金填充第一和第二间隙之间的体积， 和第二结合环，并且其中所述支架在所述第一结合环和所述第二结合环之间保持预定的距离。

公开(公告)号：US20170330855A1

公开(公告)日：2017-11-16

申请号：US15154338

申请日：2016-05-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Hang Tung ,  Su-Chun Yang ,  Tung-Liang Shao ,  Chen-Hua Yu

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L24/83 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/94 ,  H01L24/95 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/13101 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13609 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/16145 ,  H01L2224/29078 ,  H01L2224/29186 ,  H01L2224/32145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80986 ,  H01L2224/81193 ,  H01L2224/83054 ,  H01L2224/83085 ,  H01L2224/83203 ,  H01L2224/83359 ,  H01L2224/83894 ,  H01L2224/94 ,  H01L2224/95085 ,  H01L2225/06513 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10254 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/01046 ,  H01L2924/01079

Abstract: A representative system and method for manufacturing stacked semiconductor devices includes disposing an aqueous alkaline solution between a first semiconductor device and a second semiconductor device prior to bonding. In a representative implementation, first and second semiconductor devices may be hybrid bonded to one another, where dielectric features of the first semiconductor device are bonded to dielectric features of the second semiconductor device, and metal features of the first semiconductor device are bonded to metal features of the second semiconductor device. Immersion bonds so formed demonstrate a substantially lower incidence of delamination associated with bond defects.

公开(公告)号：US09502376B2

公开(公告)日：2016-11-22

申请号：US14773970

申请日：2014-03-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Andreas Plöβl

IPC: H01L21/288 ,  H01L21/285 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L24/83 ,  H01L21/2855 ,  H01L21/2885 ,  H01L21/76874 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/27444 ,  H01L2224/2745 ,  H01L2224/27462 ,  H01L2224/27464 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29109 ,  H01L2224/29113 ,  H01L2224/29139 ,  H01L2224/29166 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32505 ,  H01L2224/83054 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83359 ,  H01L2224/83539 ,  H01L2224/83825 ,  H01L2224/83902 ,  H01L2224/83948 ,  H01L2924/12041 ,  H01L2924/01083 ,  H01L2924/00012 ,  H01L2924/01322 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method is provided for connecting parts to be joined. A first layer sequence is applied to a first part to be joined. The first layer sequence contains silver. A second layer sequence is applied to a second part to be joined. The second layer sequence contains indium and bismuth. The first layer sequence and the second layer sequence are pressed together at their end faces respectively remote from the first part to be joined and the second part to be joined through application of a joining pressure at a joining temperature which amounts to at most 120° C. for a predetermined joining time. The first layer sequence and the second layer sequence fuse together to form a bonding layer which directly adjoins the first part to be joined and the second part to be joined and the melting temperature of which amounts to at least 260° C.

Abstract translation: 提供了用于连接要连接的部件的方法。 将第一层序列应用于要接合的第一部分。 第一层序列包含银。 将第二层序列应用于待连接的第二部分。 第二层序列包含铟和铋。 第一层序列和第二层序列在其端面处被压在一起，分别远离待接合的第一部分和待连接的第二部分，通过在接合温度下施加接合压力达到至多120℃ 预定的接合时间。 第一层序列和第二层序列熔合在一起形成直接毗邻待接合的第一部分和待接合的第二部分的接合层，其熔融温度等于至少260℃。

公开(公告)号：US09287237B2

公开(公告)日：2016-03-15

申请号：US14640219

申请日：2015-03-06

Applicant: RAYTHEON COMPANY

Inventor： Cody B. Moody

IPC: H01L21/30 ,  H01L21/46 ,  H01L21/00 ,  H01L23/00 ,  H01L21/56 ,  H01L23/10 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L24/83 ,  H01L21/563 ,  H01L23/10 ,  H01L24/03 ,  H01L24/09 ,  H01L24/29 ,  H01L24/32 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/04026 ,  H01L2224/05551 ,  H01L2224/05555 ,  H01L2224/05568 ,  H01L2224/26135 ,  H01L2224/29023 ,  H01L2224/29035 ,  H01L2224/29562 ,  H01L2224/2957 ,  H01L2224/29609 ,  H01L2224/29611 ,  H01L2224/29624 ,  H01L2224/29644 ,  H01L2224/29686 ,  H01L2224/32055 ,  H01L2224/32148 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/83054 ,  H01L2224/8309 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83805 ,  H01L2224/83815 ,  H01L2224/83825 ,  H01L2224/83948 ,  H01L2224/94 ,  H01L2924/01032 ,  H01L2924/01322 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: Hermetically sealed semiconductor wafer packages that include a first bond ring on a first wafer facing a complementary surface of a second bond ring on a second wafer. The package includes first and second standoffs of a first material, having a first thickness, formed on a surface of the first bond ring. The package also includes a eutectic alloy (does not have to be eutectic, typically it will be an alloy not specific to the eutectic ratio of the elements) formed from a second material and the first material to create a hermetic seal between the first and second wafer, the eutectic alloy formed by heating the first and second wafers to a temperature above a reflow temperature of the second material and below a reflow temperature of the first material, wherein the eutectic alloy fills a volume between the first and second standoffs and the first and second bond rings, and wherein the standoffs maintain a prespecified distance between the first bond ring and the second bond ring.