公开(公告)号：US20220283354A1

公开(公告)日：2022-09-08

申请号：US17628397

申请日：2020-06-22

申请人： Institute for Laser Technology ,  Panasonic Corporation

发明人： Takanori AKETA ,  Kenichiro TANAKA ,  Noriaki MIYANAGA

IPC分类号： F21V8/00

摘要： A light-emitting device includes an optical fiber, a first light source unit, and a second light source unit. The optical fiber includes a wavelength converting portion. The wavelength converting portion is provided between a light incident portion and a light emerging portion. The wavelength converting portion contains a wavelength converting material. The wavelength converting material is excited by excitation light to produce a spontaneous emission of light having a longer wavelength than the excitation light and amplifies the spontaneous emission of light to produce an amplified spontaneous emission of light. The first light source unit makes the excitation light incident on the light incident portion. The second light source unit makes seed light, causing a stimulated emission of light to be produced from the wavelength converting material that has been excited by either the excitation light or the amplified spontaneous emission of light, incident on the light incident portion.

公开(公告)号：US20170373200A1

公开(公告)日：2017-12-28

申请号：US15698222

申请日：2017-09-07

申请人： PANASONIC CORPORATION

发明人： Daisuke SHIBATA ,  Kenichiro TANAKA

IPC分类号： H01L29/872 ,  H01L29/861 ,  H01L29/812 ,  H01L29/808 ,  H01L29/778 ,  H01L21/822 ,  H01L27/098 ,  H01L27/095 ,  H01L27/088 ,  H01L27/06 ,  H01L29/47 ,  H01L29/868 ,  H01L21/8234 ,  H01L29/20

CPC分类号： H01L29/872 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/823418 ,  H01L21/8252 ,  H01L27/04 ,  H01L27/06 ,  H01L27/0716 ,  H01L27/088 ,  H01L27/095 ,  H01L27/098 ,  H01L29/0619 ,  H01L29/0646 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/47 ,  H01L29/778 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/808 ,  H01L29/812 ,  H01L29/861 ,  H01L29/868

摘要： A nitride semiconductor device is provided that includes: a substrate; an n-type drift layer above the front surface of the substrate; a p-type base layer above the n-type drift layer; a gate opening in the base layer that reaches the drift layer; an n-type channel forming layer that covers the gate opening and has a channel region; a gate electrode above a section of the channel forming layer in the gate opening; an opening that is separated from the gate electrode and reaches the base layer; an opening formed in a bottom surface of said opening and reaching the drift layer; a source electrode covering the openings; and a drain electrode on the rear surface of the substrate.

公开(公告)号：US20130234622A1

公开(公告)日：2013-09-12

申请号：US13786862

申请日：2013-03-06

申请人： PANASONIC CORPORATION

发明人： Kenichiro TANAKA ,  Naoko TAKEI

IPC分类号： H05B33/08 ,  H05B33/12

CPC分类号： H05B33/0857 ,  H01L25/0753 ,  H01L33/504 ,  H01L2924/0002 ,  H05B33/12 ,  H01L2924/00

摘要： A light emitting device includes multiple types of solid state light emitting elements having different peak wavelengths from each other; and a wavelength converter including phosphors that convert a wavelength of light emitted from each of the solid state light emitting elements. The phosphors include two or more of a first phosphor, a second phosphor, and a third phosphor. The first phosphor is excited by light emitted from a solid state light emitting element having a relatively long peak wavelength, and the second phosphor is excited by light emitted from a solid state light emitting element having a relatively short peak wavelength. The third phosphor is excited by light emitted from any of the solid state light emitting elements.

摘要翻译： 发光器件包括彼此具有不同峰值波长的多种类型的固态发光元件; 以及波长转换器，包括转换从每个固态发光元件发射的光的波长的荧光体。 荧光体包括第一荧光体，第二荧光体和第三荧光体中的两个以上。 第一荧光体由具有较长峰值波长的固态发光元件发出的光激发，第二荧光体由具有相对短的峰值波长的固体发光元件发出的光激发。 第三荧光体被从任何固态发光元件发出的光激发。

公开(公告)号：US20130126943A1

公开(公告)日：2013-05-23

申请号：US13727354

申请日：2012-12-26

申请人： PANASONIC CORPORATION

发明人： Kenichiro TANAKA ,  Tetsuzo UEDA

IPC分类号： H01L29/778

CPC分类号： H01L29/7786 ,  H01L21/28575 ,  H01L29/0843 ,  H01L29/0891 ,  H01L29/2003 ,  H01L29/41766

摘要： An insulator is formed on the upper surface of a first semiconductor layer on at least a part of a portion above which a second semiconductor layer is not formed due to an opening. In the opening, a source electrode is formed to cover an insulator. The source electrode is formed to be in contact with an interface between the first semiconductor layer and the second semiconductor layer.

摘要翻译： 在第一半导体层的上表面上形成绝缘体的至少一部分上方，由于开口而不形成第二半导体层。 在开口中，形成源电极以覆盖绝缘体。 源电极形成为与第一半导体层和第二半导体层之间的界面接触。

公开(公告)号：US20130113018A1

公开(公告)日：2013-05-09

申请号：US13728773

申请日：2012-12-27

申请人： Panasonic Corporation

发明人： Naohide WAKITA ,  Kenichiro TANAKA ,  Masahiro ISHIDA ,  Satoshi TAMURA ,  Daisuke SHIBATA

IPC分类号： H01L29/205

CPC分类号： H01L29/205 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7786

摘要： A first group III nitride semiconductor layer has a low carbon concentration region having a carbon concentration of less than 1×1017 cm−3, and located in a region under an edge of a gate electrode closer to a drain electrode, a thickness d2 of the low carbon concentration region satisfies Vm/(110·d1)≦d2

摘要翻译： 第一III族氮化物半导体层具有碳浓度小于1×1017cm-3的低碳浓度区域，并且位于靠近漏电极的栅电极的边缘下方的区域中，厚度d2 低碳浓度区域满足Vm /（110·d1）@ d2

公开(公告)号：US20170365698A1

公开(公告)日：2017-12-21

申请号：US15695904

申请日：2017-09-05

申请人： PANASONIC CORPORATION

发明人： Ryo KAJITANI ,  Daisuke SHIBATA ,  Kenichiro TANAKA ,  Masahiro ISHIDA ,  Tetsuzo UEDA

IPC分类号： H01L29/778 ,  H01L29/812 ,  H01L29/808

CPC分类号： H01L29/778 ,  H01L29/08 ,  H01L29/10 ,  H01L29/2003 ,  H01L29/72 ,  H01L29/808 ,  H01L29/812

摘要： A nitride semiconductor device includes: a substrate of a first conductivity type having a first surface and a second surface on a side of the substrate opposite the first surface; a first nitride semiconductor layer of the first conductivity type which is disposed on the first surface of the substrate and includes an acceptor impurity; a second nitride semiconductor layer of a second conductivity type disposed on the first nitride semiconductor layer, the second conductivity type being opposite to the first conductivity type; a first electrode disposed on the second surface of the substrate; a second electrode disposed on the first nitride semiconductor layer; and a gate electrode disposed on the second nitride semiconductor layer.

公开(公告)号：US20130235555A1

公开(公告)日：2013-09-12

申请号：US13792594

申请日：2013-03-11

申请人： PANASONIC CORPORATION

发明人： Kenichiro TANAKA

IPC分类号： F21V9/16

CPC分类号： F21V9/16 ,  F21K9/27 ,  F21K9/64 ,  F21V3/08 ,  F21V3/12 ,  F21V9/30 ,  F21Y2113/17 ,  F21Y2115/10 ,  H01L24/45 ,  H01L33/504 ,  H01L33/507 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device including multiple kinds of light emission units with different emission colors; a driver which drives the light emission units; and a cover member which is commonly provided for the multiple kinds of light emission units. The multiple kinds of light emission units include solid state light emitting elements of the same kind, and wavelength converters which cover the solid state light emitting elements, respectively, and convert wavelengths of lights emitted from the solid state light emitting elements into different wavelengths from each other. Further, the cover member contains a correction phosphor for correcting a chromaticity of light obtained by mixing lights emitted from the light emission units, to a predetermined chromaticity.

摘要翻译： 一种发光器件，包括具有不同发光颜色的多种发光单元; 驱动发光单元的驱动器; 以及通常设置用于多种发光单元的盖构件。 多种发光单元包括相同类型的固态发光元件和分别覆盖固态发光元件的波长转换器，并且将从固态发光元件发射的光的波长从每个发射元件转换成不同的波长 其他。 此外，盖构件包含用于校正通过将从发光单元发射的光混合而获得的光的色度达到预定色度的校正荧光体。

公开(公告)号：US20140138704A1

公开(公告)日：2014-05-22

申请号：US14165405

申请日：2014-01-27

申请人： Panasonic Corporation

发明人： Kenichiro TANAKA ,  Tetsuzo UEDA

IPC分类号： H01L29/778

CPC分类号： H01L29/778 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/66462 ,  H01L29/7787

摘要： A semiconductor device includes a field effect transistor that has a first nitride semiconductor layer and a second nitride semiconductor layer larger in bandgap than the first nitride semiconductor layer formed on a substrate in this order and a gate electrode, a source electrode, and a drain electrode, and uses two-dimensional electron gas formed at the interface between the first and second nitride semiconductor layers as the channel. The field effect transistor further has a p-type nitride semiconductor layer formed between the gate electrode and the drain electrode and electrically connected to the drain electrode.

摘要翻译： 半导体器件包括场效应晶体管，该场效应晶体管具有第一氮化物半导体层和具有比基板上形成的第一氮化物半导体层大的带隙的第二氮化物半导体层，栅电极，源电极和漏电极 并且使用形成在第一和第二氮化物半导体层之间的界面处的二维电子气体作为沟道。 场效应晶体管还具有形成在栅电极和漏电极之间并与漏电极电连接的p型氮化物半导体层。

公开(公告)号：US20130265757A1

公开(公告)日：2013-10-10

申请号：US13853347

申请日：2013-03-29

申请人： PANASONIC CORPORATION

发明人： Kenichiro TANAKA ,  Tomoyuki NAKANO ,  Yoshiyuki NAKANO

IPC分类号： F21K99/00 ,  B60Q1/04 ,  F21V13/04

CPC分类号： F21K99/00 ,  B60Q1/04 ,  F21S41/12 ,  F21S41/147 ,  F21V13/04 ,  H01L25/0753 ,  H01L33/504 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting unit includes a mounting substrate, and a first light-emitting portion disposed on the mounting substrate and emits light of a first color temperature to irradiate a first irradiation area, and second light-emitting portions each disposed on the mounting substrate and emits light of a second color temperature to irradiate a second irradiation area. The second irradiation area overlaps part of the first irradiation area and includes a region surrounding the first irradiation area.

摘要翻译： 发光单元包括安装基板和设置在安装基板上并发射第一色温的光以照射第一照射区域的第一发光部分和分别设置在安装基板上的第二发光部分和 发射第二色温的光以照射第二照射区域。 第二照射区域与第一照射区域的一部分重叠，并且包括围绕第一照射区域的区域。