公开(公告)号：US20210257277A1

公开(公告)日：2021-08-19

申请号：US16794789

申请日：2020-02-19

Applicant: Intel Corporation

Inventor： Weston BERTRAND ,  Kyle ARRINGTON ,  Shankar DEVASENATHIPATHY ,  Aaron MCCANN ,  Nicholas NEAL ,  Zhimin WAN

IPC: H01L23/433 ,  H01L23/367 ,  H01L25/065

Abstract: Embodiments of the present disclosure may generally relate to systems, apparatuses, techniques, and/or processes directed to packages that include stacked dies that use thermal conductivity features including thermally conductive through silicon vias (TSVs) filled with thermally conductive material located in passive areas of a first die to route heat from a first die away from a second die that is coupled with the first die. In embodiments, the first die may be referred to as a base die. Embodiments may include thermal blocks in the form of dummy dies that include TSVs at least partially filled with thermal energy conducting material such as copper, solder, or other alloy.

公开(公告)号：US20210242107A1

公开(公告)日：2021-08-05

申请号：US16781563

申请日：2020-02-04

Applicant: Intel Corporation

Inventor： Wei LI ,  Edvin CETEGEN ,  Nicholas S. HAEHN ,  Mitul MODI ,  Nicholas NEAL

IPC: H01L23/373 ,  H01L23/00 ,  H01L23/367

Abstract: Embodiments herein relate to systems, apparatuses, or processes directed to a substrate that includes a first region to be coupled with a die, and a second region separate and distinct from the first region that has a lower thermal conductivity than the first region, where the second region is to thermally insulate the first region when the die is coupled to the first region. The thermal insulation of the second region may be used during a TCB process to increase the quality of each of the interconnects of the die by promoting a higher temperature at the connection points to facilitate full melting of solder.

公开(公告)号：US20240258183A1

公开(公告)日：2024-08-01

申请号：US18632047

申请日：2024-04-10

Applicant: Intel Corporation

Inventor： Edvin CETEGEN ,  Jacob VEHONSKY ,  Nicholas S. HAEHN ,  Thomas HEATON ,  Steve S. CHO ,  Rahul JAIN ,  Tarek IBRAHIM ,  Antariksh Rao Pratap SINGH ,  Nicholas NEAL ,  Sergio CHAN ARGUEDAS ,  Vipul MEHTA

IPC: H01L23/16 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L23/16 ,  H01L23/3185 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/16227 ,  H01L2924/18161

Abstract: Embodiments disclosed herein include electronic packages with underfill flow control features. In an embodiment, an electronic package comprises a package substrate and a plurality of interconnects on the package substrate. In an embodiment, a die is coupled to the package substrate by the plurality of interconnects and a flow control feature is adjacent on the package substrate. In an embodiment, the flow control feature is electrically isolated from circuitry of the electronic package. In an embodiment, the electronic package further comprises an underfill surrounding the plurality of interconnects and in contact with the flow control feature.

公开(公告)号：US20230128903A1

公开(公告)日：2023-04-27

申请号：US18088478

申请日：2022-12-23

Applicant: Intel Corporation

Inventor： Weston BERTRAND ,  Kyle ARRINGTON ,  Shankar DEVASENATHIPATHY ,  Aaron MCCANN ,  Nicholas NEAL ,  Zhimin WAN

IPC: H01L23/433 ,  H01L25/065 ,  H01L23/367

Abstract: Embodiments of the present disclosure may generally relate to systems, apparatuses, techniques, and/or processes directed to packages that include stacked dies that use thermal conductivity features including thermally conductive through silicon vias (TSVs) filled with thermally conductive material located in passive areas of a first die to route heat from a first die away from a second die that is coupled with the first die. In embodiments, the first die may be referred to as a base die. Embodiments may include thermal blocks in the form of dummy dies that include TSVs at least partially filled with thermal energy conducting material such as copper, solder, or other alloy.

公开(公告)号：US20210104490A1

公开(公告)日：2021-04-08

申请号：US16596367

申请日：2019-10-08

Applicant: Intel Corporation

Inventor： Wei LI ,  Edvin CETEGEN ,  Nicholas S. HAEHN ,  Ram S. VISWANATH ,  Nicholas NEAL ,  Mitul MODI

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L21/56 ,  H01L21/78 ,  H01L21/48

Abstract: Embodiments include semiconductor packages and a method to form such semiconductor packages. A semiconductor package includes a plurality of dies on a substrate, and an encapsulation layer over the substrate. The encapsulation layer surrounds the dies. The semiconductor package also includes a plurality of dummy silicon regions on the substrate. The dummy silicon regions surround the dies and encapsulation layer. The plurality of dummy silicon regions are positioned on two or more edges of the substrate. The dummy silicon regions have a top surface substantially coplanar to a top surface of the dies. The dummy silicon regions include materials that include silicon, metals, or highly-thermal conductive materials. The materials have a thermal conductivity of approximately 120 W/mK or greater, or is equal to or greater than the thermal conductivity of silicon. An underfill layer surrounds the substrate and the dies, where the encapsulation layer surrounds portions of the underfill layer.

公开(公告)号：US20240282667A1

公开(公告)日：2024-08-22

申请号：US18635894

申请日：2024-04-15

Applicant: Intel Corporation

Inventor： Weston BERTRAND ,  Kyle ARRINGTON ,  Shankar DEVASENATHIPATHY ,  Aaron MCCANN ,  Nicholas NEAL ,  Zhimin WAN

IPC: H01L23/433 ,  H01L23/367 ,  H01L25/065

CPC classification number: H01L23/433 ,  H01L23/3675 ,  H01L25/0657

Abstract: Embodiments of the present disclosure may generally relate to systems, apparatuses, techniques, and/or processes directed to packages that include stacked dies that use thermal conductivity features including thermally conductive through silicon vias (TSVs) filled with thermally conductive material located in passive areas of a first die to route heat from a first die away from a second die that is coupled with the first die. In embodiments, the first die may be referred to as a base die. Embodiments may include thermal blocks in the form of dummy dies that include TSVs at least partially filled with thermal energy conducting material such as copper, solder, or other alloy.

公开(公告)号：US20230343723A1

公开(公告)日：2023-10-26

申请号：US18216005

申请日：2023-06-29

Applicant: Intel Corporation

Inventor： Nicholas NEAL ,  Nicholas S. HAEHN ,  Sergio CHAN ARGUEDAS ,  Edvin CETEGEN ,  Jacob VEHONSKY ,  Steve S. CHO ,  Rahul JAIN ,  Antariksh Rao Pratap SINGH ,  Tarek A. IBRAHIM ,  Thomas HEATON

IPC: H01L23/00 ,  H01L23/538 ,  H01L23/367

CPC classification number: H01L23/562 ,  H01L23/5381 ,  H01L23/3675

Abstract: Embodiments disclosed herein include electronic packages with thermal solutions. In an embodiment, an electronic package comprises a package substrate, a first die electrically coupled to the package substrate, and an integrated heat spreader (IHS) that is thermally coupled to a surface of the first die. In an embodiment, the IHS comprises a main body having an outer perimeter, and one or more legs attached to the outer perimeter of the main body, wherein the one or more legs are supported by the package substrate. In an embodiment, the electronic package further comprises a thermal block between the package substrate and the main body of the IHS, wherein the thermal block is within the outer perimeter of the main body.

公开(公告)号：US20230238355A1

公开(公告)日：2023-07-27

申请号：US18127539

申请日：2023-03-28

Applicant: Intel Corporation

Inventor： Wei LI ,  Edvin CETEGEN ,  Nicholas S. HAEHN ,  Ram S. VISWANATH ,  Nicholas NEAL ,  Mitul MODI

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/498 ,  H01L21/56 ,  H01L21/78 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L25/0652 ,  H01L21/78 ,  H01L21/486 ,  H01L21/561 ,  H01L23/3128 ,  H01L23/49827 ,  H01L24/16 ,  H01L2224/16225

Abstract: Embodiments include semiconductor packages and a method to form such semiconductor packages. A semiconductor package includes a plurality of dies on a substrate, and an encapsulation layer over the substrate. The encapsulation layer surrounds the dies. The semiconductor package also includes a plurality of dummy silicon regions on the substrate. The dummy silicon regions surround the dies and encapsulation layer. The plurality of dummy silicon regions are positioned on two or more edges of the substrate. The dummy silicon regions have a top surface substantially coplanar to a top surface of the dies. The dummy silicon regions include materials that include silicon, metals, or highly-thermal conductive materials. The materials have a thermal conductivity of approximately 120 W/mK or greater, or is equal to or greater than the thermal conductivity of silicon. An underfill layer surrounds the substrate and the dies, where the encapsulation layer surrounds portions of the underfill layer.

公开(公告)号：US20210035921A1

公开(公告)日：2021-02-04

申请号：US16526087

申请日：2019-07-30

Applicant: Intel Corporation

Inventor： Nicholas NEAL ,  Nicholas S. HAEHN ,  Sergio CHAN ARGUEDAS ,  Edvin CETEGEN ,  Jacob VEHONSKY ,  Steve S. CHO ,  Rahul JAIN ,  Antariksh Rao Pratap SINGH ,  Tarek A. IBRAHIM ,  Thomas HEATON

IPC: H01L23/00 ,  H01L23/367 ,  H01L23/538

Abstract: Embodiments disclosed herein include electronic packages with thermal solutions. In an embodiment, an electronic package comprises a package substrate, a first die electrically coupled to the package substrate, and an integrated heat spreader (IHS) that is thermally coupled to a surface of the first die. In an embodiment, the IHS comprises a main body having an outer perimeter, and one or more legs attached to the outer perimeter of the main body, wherein the one or more legs are supported by the package substrate. In an embodiment, the electronic package further comprises a thermal block between the package substrate and the main body of the IHS, wherein the thermal block is within the outer perimeter of the main body.

公开(公告)号：US20240136326A1

公开(公告)日：2024-04-25

申请号：US18399189

申请日：2023-12-28

Applicant: Intel Corporation

Inventor： Wei LI ,  Edvin CETEGEN ,  Nicholas S. HAEHN ,  Ram S. VISWANATH ,  Nicholas NEAL ,  Mitul MODI

IPC: H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L25/0652 ,  H01L21/486 ,  H01L21/561 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/49827 ,  H01L24/16 ,  H01L2224/16225

Abstract: Embodiments include semiconductor packages and a method to form such semiconductor packages. A semiconductor package includes a plurality of dies on a substrate, and an encapsulation layer over the substrate. The encapsulation layer surrounds the dies. The semiconductor package also includes a plurality of dummy silicon regions on the substrate. The dummy silicon regions surround the dies and encapsulation layer. The plurality of dummy silicon regions are positioned on two or more edges of the substrate. The dummy silicon regions have a top surface substantially coplanar to a top surface of the dies. The dummy silicon regions include materials that include silicon, metals, or highly-thermal conductive materials. The materials have a thermal conductivity of approximately 120 W/mK or greater, or is equal to or greater than the thermal conductivity of silicon. An underfill layer surrounds the substrate and the dies, where the encapsulation layer surrounds portions of the underfill layer.