公开(公告)号：US20240321962A1

公开(公告)日：2024-09-26

申请号：US18187965

申请日：2023-03-22

Applicant: Intel Corporation

Inventor： Tao Chu ,  Robin Chao ,  Guowei Xu ,  Feng Zhang ,  Minwoo Jang

IPC: H01L29/06 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/775

CPC classification number: H01L29/068 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/775 ,  H01L29/165 ,  H01L29/42392

Abstract: Described herein are nanoribbon-based transistor devices in which the nanoribbons have rounded cross-sections. The nanoribbons may include caps or outer layers of semiconductor channel material grown over an inner layer of semiconductor channel material. Different materials may be used for the outer layers of NMOS and PMOS transistors. In one example, an integrated circuit device includes NMOS transistors formed from or more nanoribbons with rounded cross-sections and an outer layer of silicon, and a PMOS transistors formed from or more nanoribbons with rounded cross-sections and an outer layer of silicon germanium.

公开(公告)号：US20240321987A1

公开(公告)日：2024-09-26

申请号：US18187990

申请日：2023-03-22

Applicant: Intel Corporation

Inventor： Tao Chu ,  Guowei Xu ,  Robin Chao ,  Chiao-Ti Huang ,  Feng Zhang ,  Minwoo Jang ,  Chia-Ching Lin ,  Biswajeet Guha ,  Yue Zhong ,  Anand S. Murthy

IPC: H01L29/423 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L27/0886 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78696

Abstract: Described herein are integrated circuit devices that include both nanoribbon-based transistors and fin-shaped transistors. The nanoribbon transistors may have shorter channel lengths than the fin transistors. In addition, the nanoribbon transistors may have thinner gate dielectrics than the fin transistors.

公开(公告)号：US20240113118A1

公开(公告)日：2024-04-04

申请号：US17956188

申请日：2022-09-29

Applicant: Intel Corporation

Inventor： Tao Chu ,  Minwoo Jang ,  Yanbin Luo ,  Paul A. Packan

IPC: H01L27/092

CPC classification number: H01L27/0922 ,  H01L27/0924

Abstract: Integrated circuit dies, apparatuses, systems, and techniques, are described herein related to low and ultra-low threshold voltage transistor cells. A first transistor cell includes separate semiconductor bodies contacted by separate gate electrodes having a dielectric material therebetween. A second transistor cell includes separate semiconductor bodies contacted by a shared gate electrode that couples to both semiconductor bodies. Transistors of the second transistor cell may be operated at a lower threshold voltage than those of the first transistor cell due to increased strain on the semiconductor bodies from the shared gate electrode.

公开(公告)号：US20250140649A1

公开(公告)日：2025-05-01

申请号：US18498340

申请日：2023-10-31

Applicant: Intel corporation

Inventor： Feng Zhang ,  Tao Chu ,  Minwoo Jang ,  Yanbin Luo ,  Guowei Xu ,  Ting-Hsiang Hung ,  Chiao-Ti Huang ,  Robin Chao ,  Chia-Ching Lin ,  Yang Zhang ,  Kan Zhang

IPC: H01L23/48 ,  H01L27/092 ,  H01L29/06 ,  H01L29/778 ,  H01L29/786

Abstract: An IC device may include a semiconductor structure and a backside semiconductor structure over the semiconductor structure. The semiconductor structure and backside semiconductor structure may constitute the source or drain region of a transistor. The backside semiconductor structure may be closer to the backside of a substrate of the IC device than the semiconductor structure. The backside semiconductor structure may be formed at a lower temperature than the semiconductor structure. The backside semiconductor structure may have one or more different materials from the semiconductor structure. For instance, a semiconductor material in the backside semiconductor structure may have a different crystal direction from a semiconductor material in the semiconductor structure. As another example, the backside semiconductor structure may have one or more different chemical compounds from the semiconductor structure. The backside semiconductor structure may be over a backside via that can couple the backside semiconductor structure to a backside metal layer.

公开(公告)号：US20250098249A1

公开(公告)日：2025-03-20

申请号：US18467859

申请日：2023-09-15

Applicant: Intel Corporation

Inventor： Avijit Barik ,  Tao Chu ,  Minwoo Jang ,  Tofizur RAHMAN ,  Conor P. Puls ,  Ariana E. Bondoc ,  Diane Lancaster ,  Chi-Hing Choi ,  Derek Keefer

IPC: H01L29/45 ,  H01L21/285 ,  H01L23/522 ,  H01L23/532 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: Disclosed herein are IC structures and devices that aim to mitigate proximity effects of deep trench vias. An example IC structure may include a device region having a first face and a second face, the second face being opposite the first face, and further include a conductive via extending between the first face and the second face, wherein the conductive via includes an electrically conductive material, and wherein a concentration of titanium at sidewalls of the conductive via is below about 1015 atoms per cubic centimeter.

公开(公告)号：US20240088217A1

公开(公告)日：2024-03-14

申请号：US17940195

申请日：2022-09-08

Applicant: Intel Corporation

Inventor： Tao Chu ,  Minwoo Jang ,  Chia-Ching Lin ,  Yanbin Luo ,  Ting-Hsiang Hung ,  Feng Zhang ,  Guowei Xu

IPC: H01L29/06 ,  H01L21/762 ,  H01L29/78

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L29/7856

Abstract: Techniques are provided herein to form semiconductor devices that include a layer across an upper surface of a dielectric fill between devices and configured to prevent or otherwise reduce recessing of the dielectric fill. In this manner, the layer may be referred to as a barrier layer or recess-inhibiting layer. The semiconductor regions of the devices extend above a subfin region that may be native to the substrate. These subfin regions are separated from one another using a dielectric fill that acts as a shallow trench isolation (STI) structure to electrically isolate devices from one another. A barrier layer is formed over the dielectric fill early in the fabrication process to prevent or otherwise reduce the dielectric fill from recessing during subsequent processing. The layer may include oxygen and a metal, such as aluminum.

公开(公告)号：US20250006734A1

公开(公告)日：2025-01-02

申请号：US18216493

申请日：2023-06-29

Applicant: Intel Corporation

Inventor： Tao Chu ,  Minwoo Jang ,  Yanbin Luo ,  Paul Packan ,  Guowei Xu ,  Chiao-Ti Huang ,  Robin Chao ,  Feng Zhang ,  Ting-Hsiang Hung ,  Chia-Ching Lin ,  Yang Zhang ,  Chung-Hsun Lin

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/775 ,  H01L29/78

Abstract: An integrated circuit (IC) device includes a stripe of material perpendicular to, and spanning between, semiconductor structures with multiple widths, and the stripe is between transistors with channel regions of differing widths in the semiconductor structures. The material stripes cover transition portions between different widths of the semiconductor structures. The semiconductor structures may be channel structures of different types, including groups of fins or nanoribbons. Channel regions of differing widths may include more or fewer fins or narrower or wider nanoribbons. The channel regions may have alternating conductivity types, n- and p-type.

公开(公告)号：US20250006579A1

公开(公告)日：2025-01-02

申请号：US18216476

申请日：2023-06-29

Applicant: Intel Corporation

Inventor： Avijit Barik ,  Tao Chu ,  Minwoo Jang ,  Aurelia Wang ,  Conor P. Puls

IPC: H01L23/31 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417

Abstract: Devices, transistor structures, systems, and techniques are described herein related to providing a backside passivation layer on a transistor semiconductor material. The semiconductor material is between source and drain structures, and a gate structure is adjacent a channel region of the semiconductor material. The passivation layer is formed as a conformal insulative layer on a backside of the semiconductor material and is then treated using an ozone/UV cure to remove trap charges from the semiconductor material.

公开(公告)号：US20230307449A1

公开(公告)日：2023-09-28

申请号：US17656490

申请日：2022-03-25

Applicant: Intel Corporation

Inventor： Tao Chu ,  Minwoo Jang ,  Aurelia Chi Wang ,  Conor Puls ,  Brian Greene ,  Tofizur Rahman ,  Lin Hu ,  Jaladhi Mehta ,  Chung-Hsun Lin ,  Walid Hafez

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L27/088 ,  H01L29/0665 ,  H01L29/42392

Abstract: An integrated circuit includes a first source region, a first drain region, a first fin having (i) a first upper region laterally between the first source region and the first drain region and (ii) a first lower region below the first upper region, and a first gate structure on at least top and side surfaces of the first upper region. The integrated circuit further includes a second source region, a second drain region, a second fin having (i) a second upper region laterally between the second source region and the second drain region and (ii) a second lower region below the second upper region, and a second gate structure on at least top and side surfaces of the second upper region. In an example, a first vertical height of the first lower region is different from a second vertical height of the second lower region by at least 2 nanometers (nm).

公开(公告)号：US20250169130A1

公开(公告)日：2025-05-22

申请号：US18515626

申请日：2023-11-21

Applicant: Intel Corporation

Inventor： Tao Chu ,  Minwoo Jang ,  Yanbin Luo ,  Paul Packan ,  Guowei Xu ,  Chiao-Ti Huang ,  Robin Chao ,  Feng Zhang ,  Ting-Hsiang Hung ,  Chia-Ching Lin ,  Yang Zhang ,  Kan Zhang ,  Chung-Hsun Lin ,  Anand S. Murthy

IPC: H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/423 ,  H01L29/66

Abstract: Fabrication methods for integrated circuit (IC) structures and devices with different nanoribbon thicknesses are disclosed. In one example, an IC structure includes a stack of nanoribbons stacked above one another over the support, including a first nanoribbon with a first channel region and a second nanoribbon with a second channel region, where the first channel region has a first thickness and the second channel region has a second thickness, and where the first thickness of the first channel region is different (e.g., greater) than the second thickness of the second channel region.