利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

124 条记录 (耗时 0.018 秒)

    Semiconductor device
    1.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07361933B2

    公开(公告)日：2008-04-22

    申请号：US11616707

    申请日：2006-12-27

    申请人： Itaru Kawabata ,  Hirofumi Inoue

    发明人： Itaru Kawabata ,  Hirofumi Inoue

    IPC分类号： H01L27/108 ,  H01L29/04 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112

    CPC分类号： H01L27/1087 ,  H01L27/10867

    摘要： A semiconductor device includes a first trench capacitor formed in a first trench, a second trench capacitor formed in a second trench, a first gate electrode disposed above a first active area, a second gate electrode disposed above a second active area, a first impurity doped region formed in an outer periphery of the second trench including a boundary adjacent to the second trench and doped with an impurity of a first conduction type, and a second impurity doped region formed in the first impurity doped region so as to include the first active area located below the first gate electrode, the second impurity doped region being doped with an impurity of a second conduction type opposite to the first conduction type impurity.

    摘要翻译： 半导体器件包括形成在第一沟槽中的第一沟槽电容器，形成在第二沟槽中的第二沟槽电容器，设置在第一有源区上方的第一栅电极，设置在第二有源区上方的第二栅电极，第一杂质掺杂 形成在所述第二沟槽的外周中的包括与所述第二沟槽相邻并且掺杂有第一导电类型的杂质的边界的第二杂质掺杂区域和形成在所述第一杂质掺杂区域中的第二杂质掺杂区域，以包括所述第一有源区域 位于第一栅极电极下方，第二杂质掺杂区掺杂有与第一导电类型杂质相反的第二导电类型的杂质。

    Method of fabricating semiconductor device
    2.
    发明授权
    Method of fabricating semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07176080B2

    公开(公告)日：2007-02-13

    申请号：US11092900

    申请日：2005-03-30

    申请人： Itaru Kawabata ,  Hirofumi Inoue

    发明人： Itaru Kawabata ,  Hirofumi Inoue

    IPC分类号： H01L21/8234 ,  H01L21/8244

    CPC分类号： H01L27/1087 ,  H01L27/10867

    摘要： A method of fabricating a semiconductor device includes forming trenches in active areas respectively, the trenches having sidewalls and upper openings respectively, forming first conductive regions in the trenches so that the first conductive regions serve as electrodes of the trench capacitors, respectively, each first conductive region including first impurity of a predetermined conductive type, forming sidewall insulating films on the sidewalls located over the first conductive regions respectively, forming second conductive regions inside the sidewall insulating films respectively, removing the sidewall insulating film located above the second conductive regions respectively, doping regions of the substrate located under the gate electrodes with second impurity of a reverse conduction type relative to the first impurity in the second direction from the upper openings through portions of the trenches from which the sidewall insulating films have been removed respectively, and forming third conductive regions in the portions of the trenches.

    摘要翻译： 制造半导体器件的方法包括分别在有源区中形成沟槽，沟槽分别具有侧壁和上部开口，在沟槽中形成第一导电区域，使得第一导电区域分别用作沟槽电容器的电极，每个第一导电 区域，包括预定导电类型的第一杂质，分别在位于第一导电区域上方的侧壁上形成侧壁绝缘膜，分别在侧壁绝缘膜内部形成第二导电区域，分别去除位于第二导电区域上方的侧壁绝缘膜，掺杂 位于栅电极下方的基板的第二杂质的第二杂质相对于第二杂质的第二杂质的第二杂质，分别从侧壁绝缘膜的沟槽的上部开始经过上部开口， 在沟槽的部分中形成第三导电区域。

    Semiconductor device and method of manufacturing the same
    3.
    发明申请
    Semiconductor device and method of manufacturing the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20060231956A1

    公开(公告)日：2006-10-19

    申请号：US11402919

    申请日：2006-04-13

    申请人： Itaru Kawabata ,  Hirofumi Inoue

    发明人： Itaru Kawabata ,  Hirofumi Inoue

    IPC分类号： H01L23/52

    CPC分类号： H01L23/53295 ,  H01L21/76802 ,  H01L21/76829 ,  H01L23/5226 ,  H01L27/10882 ,  H01L27/10885 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes a first insulating film having a plurality of wiring trenches formed at predetermined intervals in an upper part, the first insulating film having an upper surface, a second insulating film formed on the upper surface of the first insulating film so as to be located between the wiring trenches, the second insulating film having an upper surface, a wiring layer buried in the wiring trenches and formed so that an upper surface thereof is located lower than an upper surface of the second insulating film, and a via plug formed so as to be connected to the upper surface of the wiring layer.

    摘要翻译： 半导体器件包括：第一绝缘膜，具有在上部形成有规定间隔的多个布线沟槽，第一绝缘膜具有上表面，第二绝缘膜形成在第一绝缘膜的上表面上， 位于布线沟槽之间，第二绝缘膜具有上表面，布线层埋设在布线沟槽中并且形成为使得其上表面位于比第二绝缘膜的上表面更低的通孔塞 以连接到布线层的上表面。

    Semiconductor device and method of fabricating the same
    4.
    发明申请
    Semiconductor device and method of fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号：US20050218441A1

    公开(公告)日：2005-10-06

    申请号：US11092900

    申请日：2005-03-30

    申请人： Itaru Kawabata ,  Hirofumi Inoue

    发明人： Itaru Kawabata ,  Hirofumi Inoue

    IPC分类号： H01L27/108 ,  H01L21/8242 ,  H01L31/119

    CPC分类号： H01L27/1087 ,  H01L27/10867

    摘要： A semiconductor device includes a semiconductor substrate formed with a plurality of trenches, a plurality of trench capacitor type DRAM unit cells including capacitors formed in the trenches and cell transistors formed to be adjacent to the trenches respectively, a plurality of impurity doped regions including boundaries connecting the trenches and the cell transistors and formed in outer peripheries of the trenches, respectively, and a plurality of reverse conduction type impurity regions formed by doping regions of the substrate under the cell transistors with impurity of a reverse conduction type relative to the impurity doped regions, respectively.

    摘要翻译： 半导体器件包括形成有多个沟槽的半导体衬底，包括形成在沟槽中的电容器和形成为与沟槽相邻的单元晶体管的多个沟槽电容器型DRAM单位单元，多个杂质掺杂区域，包括边界连接 沟槽和单元晶体管分别形成在沟槽的外周边，以及多个反向导电型杂质区域，该多个反向导电型杂质区域通过在单元晶体管的下方掺杂具有相对于杂质掺杂区域的反向导电类型的杂质的区域而形成 ， 分别。

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    5.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 失效
    半导体器件及其制造方法

    公开(公告)号：US20070108474A1

    公开(公告)日：2007-05-17

    申请号：US11616707

    申请日：2006-12-27

    申请人： Itaru Kawabata ,  Hirofumi Inoue

    发明人： Itaru Kawabata ,  Hirofumi Inoue

    IPC分类号： H01L29/76

    CPC分类号： H01L27/1087 ,  H01L27/10867

    摘要： A semiconductor device includes a semiconductor substrate formed with a plurality of trenches, a plurality of trench capacitor type DRAM unit cells including capacitors formed in the trenches and cell transistors formed to be adjacent to the trenches respectively, a plurality of impurity doped regions including boundaries connecting the trenches and the cell transistors and formed in outer peripheries of the trenches, respectively, and a plurality of reverse conduction type impurity regions formed by doping regions of the substrate under the cell transistors with impurity of a reverse conduction type relative to the impurity doped regions, respectively.

    摘要翻译： 半导体器件包括形成有多个沟槽的半导体衬底，包括形成在沟槽中的电容器和形成为与沟槽相邻的单元晶体管的多个沟槽电容器型DRAM单位单元，多个杂质掺杂区域，包括边界连接 沟槽和单元晶体管分别形成在沟槽的外周边，以及多个反向导电型杂质区域，该多个反向导电型杂质区域通过在单元晶体管的下方掺杂具有相对于杂质掺杂区域的反向导电类型的杂质的区域而形成 ， 分别。

    Electrostatic discharge protector
    6.
    发明授权
    Electrostatic discharge protector 失效
    静电放电保护器

    公开(公告)号：US08625248B2

    公开(公告)日：2014-01-07

    申请号：US13123262

    申请日：2009-10-06

    申请人： Mina Onishi ,  Yoshimitsu Ishihara ,  Hirofumi Inoue ,  Yukihiko Azuma

    发明人： Mina Onishi ,  Yoshimitsu Ishihara ,  Hirofumi Inoue ,  Yukihiko Azuma

    IPC分类号： H02H1/04 ,  H02H3/22

    CPC分类号： H01C7/12 ,  H01T4/10 ,  H05K1/0259 ,  H05K2201/09672 ,  H05K2201/09881

    摘要： The present invention provides an electrostatic discharge protector capable of protecting electronic circuit boards having various designs from electrostatic discharge freely, simply and easily. The electrostatic discharge protector of the present invention comprises at least three conductive members containing one pair of electrodes and the conductive members other than the electrodes, the conductive members are each disposed in such a way that the gap between one conductive member and the other conductive member has a width of 0.1 to 10 μm, an insulating member is disposed and embedded in at least one of gaps having a width of 0.1 to 10 μm which are adjacent to each conductive member and one electrode is connected to the other electrode paired with the one electrode through the insulating member and the conductive members other than electrodes.

    摘要翻译： 本发明提供一种静电放电保护器，其能够简单且容易地保护具有各种设计的电子电路板免受静电放电。 本发明的静电放电保护器包括至少三个包含一对电极的导电构件和除电极之外的导电构件，导电构件各自设置成使得一个导电构件和另一个导电构件之间的间隙 具有0.1至10微米的宽度，绝缘构件设置并嵌入在与每个导电构件相邻的宽度为0.1至10μm的间隙中的至少一个中，并且一个电极连接到与该一个配对的另一个电极 电极通过绝缘构件和除电极之外的导电构件。

    Suspension system for vehicle
    7.
    发明授权
    Suspension system for vehicle 有权
    车辆悬挂系统

    公开(公告)号：US08398091B2

    公开(公告)日：2013-03-19

    申请号：US12935703

    申请日：2009-05-08

    申请人： Hirofumi Inoue ,  Takuhiro Kondo

    发明人： Hirofumi Inoue ,  Takuhiro Kondo

    IPC分类号： B60G17/0165

    CPC分类号： B60G17/0157 ,  B60G17/06 ,  B60G2202/42 ,  B60G2400/102 ,  B60G2400/206 ,  B60G2400/252

    摘要： A suspension system for a vehicle, including: an electromagnetic actuator configured to generate an actuator force and including a sprung-side unit supported by a sprung portion, an unsprung-side unit supported by an unsprung portion, a screw mechanism, and an electromagnetic motor; a connecting mechanism including a support spring for permitting one of the sprung-side and unsprung-side units to be floatingly supported as a floating unit by a unit-floatingly support portion that is one of the sprung and unsprung portions by which the floating unit is supported; and a controller including a sprung-vibration-damping control portion and a relative-vibration-damping control portion that is configured to execute a relative-vibration damping control for damping a vibration of the floating unit caused by the structure in which the floating unit is floatingly supported by the support spring.

    摘要翻译： 一种用于车辆的悬架系统，包括：电磁致动器，其被配置为产生致动器力，并且包括由簧上部支撑的簧上侧单元，由簧下部支撑的簧下侧单元，螺旋机构和电磁马达 ; 一种连接机构，包括：支撑弹簧，用于通过单元浮动支撑部分将所述簧上侧和簧下侧单元中的一个作为浮动单元浮动地支撑，所述单元浮动支撑部分是所述浮动单元和簧下侧单元之一 支持的; 以及控制器，其包括弹簧减振控制部分和相对减振控制部分，所述相关减振控制部分被配置为执行相对振动衰减控制，以减缓由所述浮动单元是 由支撑弹簧浮动支撑。

    Electromagnetic shock absorber for vehicle
    10.
    发明授权
    Electromagnetic shock absorber for vehicle 有权
    车用电磁减震器

    公开(公告)号：US08127900B2

    公开(公告)日：2012-03-06

    申请号：US12089441

    申请日：2006-09-21

    申请人： Hirofumi Inoue

    发明人： Hirofumi Inoue

    IPC分类号： F16F15/03

    CPC分类号： F16F15/03 ,  B60G13/16 ,  B60G15/067 ,  B60G17/0157 ,  B60G17/06 ,  B60G2202/12 ,  B60G2202/20 ,  B60G2202/25 ,  B60G2202/312 ,  B60G2202/42 ,  B60G2202/441 ,  B60G2204/418 ,  B60G2204/4232 ,  B60G2204/4502 ,  B60G2206/41 ,  B60G2400/102 ,  B60G2400/252 ,  B60G2401/14 ,  B60G2500/10 ,  B60G2600/184 ,  B60G2600/26 ,  F16F2232/06

    摘要： An electromagnetic shock absorber including: (a) a wheel-side member; (b) a body-side member movable relative to the wheel-side member; and (c) a damping force generator with an electromagnetic motor including stationary and movable elements movable relative to each other. The damping force generator can generate, based on a force generated by the motor, a damping force acting against a relative movement of the wheel-side member and the body-side member. The motor has an axis extending in a both-members-relative-movement direction as a direction of the above-described relative movement. The stationary element is supported by the wheel-side member via an elastic body, to be movable relative to the wheel-side member in the both-members-relative-movement direction. The electromagnetic motor allows relative movement of the stationary element and the movable element upon movement of the stationary element relative to the wheel-side member.

    摘要翻译： 一种电磁减震器，包括：（a）轮侧构件; （b）相对于轮侧构件可移动的主体侧构件; 和（c）具有电磁马达的阻尼力发生器，其包括可相对于彼此移动的固定和可移动元件。 阻尼力发生器可以基于由电动机产生的力产生抵抗轮侧构件和车体侧构件的相对运动的阻尼力。 马达具有作为上述相对运动的方向以两个构件相对移动方向延伸的轴线。 固定件通过弹性体由轮侧构件支撑，能够相对于车轮侧构件在两构件相对移动方向上移动。 当静止元件相对于轮侧构件移动时，电磁马达允许静止元件和可动元件相对运动。