公开(公告)号：US07102235B2

公开(公告)日：2006-09-05

申请号：US10737315

申请日：2003-12-15

申请人： Ivo Raaijmakers ,  Suvi P. Haukka ,  Yille A. Saanila ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H. A. Granneman

发明人： Ivo Raaijmakers ,  Suvi P. Haukka ,  Yille A. Saanila ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H. A. Granneman

IPC分类号： H01L23/52

CPC分类号： C23C16/45525 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/08 ,  C23C16/14 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/45534 ,  C23C16/45536 ,  C30B25/02 ,  C30B29/02 ,  C30B29/36 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.

摘要翻译： 提供了集成电路中双镶嵌结构的保形衬里的方法和结构。 沟槽和接触通孔形成在绝缘层中。 沟槽和通孔暴露于交替的化学物质以形成所需衬里材料的单层。 示例性工艺流程包括交替脉冲的金属卤化物和注入恒定载流子的氨气。 自身端接的金属层因此与氮气反应。 接近完美的台阶覆盖允许扩散阻挡功能的最小厚度，从而使任何给定沟槽和通孔尺寸的后续填充金属的体积最大化。

公开(公告)号：US06727169B1

公开(公告)日：2004-04-27

申请号：US09644416

申请日：2000-08-23

申请人： Ivo Raaijmakers ,  Suvi P. Haukka ,  Ville A. Saanila ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H. A. Granneman

发明人： Ivo Raaijmakers ,  Suvi P. Haukka ,  Ville A. Saanila ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H. A. Granneman

IPC分类号： H01L214763

CPC分类号： C23C16/45525 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/08 ,  C23C16/14 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/45534 ,  C23C16/45536 ,  C30B25/02 ,  C30B29/02 ,  C30B29/36 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.

摘要翻译： 提供了集成电路中双镶嵌结构的保形衬里的方法和结构。 沟槽和接触通孔形成在绝缘层中。 沟槽和通孔暴露于交替的化学物质以形成所需衬里材料的单层。 示例性工艺流程包括交替脉冲的金属卤化物和注入恒定载流子的氨气。 自身端接的金属层因此与氮气反应。 接近完美的台阶覆盖允许扩散阻挡功能的最小厚度，从而使任何给定沟槽和通孔尺寸的后续填充金属的体积最大化。

公开(公告)号：US07670944B2

公开(公告)日：2010-03-02

申请号：US11511877

申请日：2006-08-28

申请人： Ivo Raaijmakers ,  Suvi P. Haukka ,  Ville A. Saanila ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H.A. Granneman

发明人： Ivo Raaijmakers ,  Suvi P. Haukka ,  Ville A. Saanila ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H.A. Granneman

IPC分类号： H01L21/4763

CPC分类号： C23C16/45525 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/08 ,  C23C16/14 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/45534 ,  C23C16/45536 ,  C30B25/02 ,  C30B29/02 ,  C30B29/36 ,  H01L21/28562 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.

摘要翻译： 提供了集成电路中双镶嵌结构的保形衬里的方法和结构。 沟槽和接触通孔形成在绝缘层中。 沟槽和通孔暴露于交替的化学物质以形成所需衬里材料的单层。 示例性工艺流程包括交替脉冲的金属卤化物和注入恒定载流子的氨气。 自身端接的金属层因此与氮气反应。 接近完美的台阶覆盖允许扩散阻挡功能的最小厚度，从而使任何给定沟槽和通孔尺寸的后续填充金属的体积最大化。

公开(公告)号：US06679951B2

公开(公告)日：2004-01-20

申请号：US09991332

申请日：2001-11-13

申请人： Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H. A. Granneman

发明人： Pekka J. Soininen ,  Kai-Erik Elers ,  Ernst H. A. Granneman

IPC分类号： C23C2200

CPC分类号： H01L21/321 ,  H01L21/76877 ,  H01L21/76883

摘要： The invention relates generally to the prevention of copper oxidation during copper anneal processes. In one aspect of the invention, copper oxidation is prevented by carrying out the anneal in the presence of one or more organic reducing agents.

摘要翻译： 本发明一般涉及铜退火工艺中铜氧化的防止。 在本发明的一个方面，通过在一种或多种有机还原剂的存在下进行退火来防止铜氧化。

公开(公告)号：US07465658B2

公开(公告)日：2008-12-16

申请号：US11411430

申请日：2006-04-25

申请人： Ivo Raaijmakers ,  Pekka J. Soininen ,  Kai-Erik Elers

发明人： Ivo Raaijmakers ,  Pekka J. Soininen ,  Kai-Erik Elers

IPC分类号： H01L21/4763

CPC分类号： H01L21/76846 ,  C23C16/0272 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76856 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is proposed for improving the adhesion between a diffusion barrier film and a metal film. Both the diffusion barrier film and the metal film can be deposited in either sequence onto a semiconductor substrate. A substrate comprising a first film, which is one of a diffusion barrier film or a metal film, with the first film being exposed at least at part of the surface area of the substrate, is exposed to an oxygen-containing reactant to create a surface termination of about one monolayer of oxygen-containing groups or oxygen atoms on the exposed parts of the first film. Then the second film, which is the other one of a diffusion barrier film and a metal film, is deposited onto the substrate. Furthermore, an oxygen bridge structure is proposed, the structure comprising a diffusion barrier film and a metal film having an interface with the diffusion barrier film, wherein the interface comprises a monolayer of oxygen atoms.

摘要翻译： 提出了改善扩散阻挡膜和金属膜之间的粘合性的方法。 扩散阻挡膜和金属膜都可以以任一顺序沉积到半导体衬底上。 包含第一膜，其是扩散阻挡膜或金属膜之一，其中第一膜至少部分地暴露于基底的表面区域，以暴露于含氧反应物以形成表面 在第一膜的暴露部分上终止约一个单层的含氧基团或氧原子。 然后将作为扩散阻挡膜和金属膜中的另一个的第二膜沉积在基板上。 此外，提出了氧桥结构，其结构包括扩散阻挡膜和与扩散阻挡膜具有界面的金属膜，其中界面包括单层氧原子。

公开(公告)号：US07034397B2

公开(公告)日：2006-04-25

申请号：US10696244

申请日：2003-10-28

申请人： Ivo Raaijmakers ,  Pekka J. Soininen ,  Kai-Erik Elers

发明人： Ivo Raaijmakers ,  Pekka J. Soininen ,  Kai-Erik Elers

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/76846 ,  C23C16/0272 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76856 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is proposed for improving the adhesion between a diffusion barrier film and a metal film. Both the diffusion barrier film and the metal film can be deposited in either sequence onto a semiconductor substrate. A substrate comprising a first film, which is one of a diffusion barrier film or a metal film, with the first film being exposed at least at part of the surface area of the substrate, is exposed to an oxygen-containing reactant to create a surface termination of about one monolayer of oxygen-containing groups or oxygen atoms on the exposed parts of the first film. Then the second film, which is the other one of a diffusion barrier film and a metal film, is deposited onto the substrate. Furthermore, an oxygen bridge structure is proposed, the structure comprising a diffusion barrier film and a metal film having an interface with the diffusion barrier film, wherein the interface comprises a monolayer of oxygen atoms.

摘要翻译： 提出了改善扩散阻挡膜和金属膜之间的粘合性的方法。 扩散阻挡膜和金属膜都可以以任一顺序沉积到半导体衬底上。 包含第一膜，其是扩散阻挡膜或金属膜之一，其中第一膜至少部分地暴露于基底的表面区域，以暴露于含氧反应物以形成表面 在第一膜的暴露部分上终止约一个单层的含氧基团或氧原子。 然后将作为扩散阻挡膜和金属膜中的另一个的第二膜沉积在基板上。 此外，提出了氧桥结构，其结构包括扩散阻挡膜和与扩散阻挡膜具有界面的金属膜，其中界面包括单层氧原子。

公开(公告)号：US06887795B2

公开(公告)日：2005-05-03

申请号：US10300169

申请日：2002-11-19

申请人： Pekka J. Soininen ,  Kai-Erik Elers ,  Suvi Haukka

发明人： Pekka J. Soininen ,  Kai-Erik Elers ,  Suvi Haukka

IPC分类号： H01L21/285 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76843 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76823 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76883 ,  H01L21/76886 ,  H01L2224/32245 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2924/00011 ,  H01L2924/12044 ,  H01L2924/00 ,  H01L2924/01005

摘要： This invention relates to manufacturing of integrated circuits (ICs) and especially conductive layers suitable for use in an IC. According to the preferred method a metal oxide thin film is deposited on a substrate surface and reduced thereafter essentially into a metallic form with an organic reducing agent. The metal oxide is preferably deposited according to the principles of atomic layer deposition (ALD) using a metal source chemical and an oxygen source chemical. The reduction step is preferably carried out in an ALD reactor using one or more vaporized organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO and —COOH.

摘要翻译： 本发明涉及集成电路（IC）的制造，特别是适用于IC中的导电层。 根据优选的方法，将金属氧化物薄膜沉积在基材表面上，然后用有机还原剂基本上还原成金属形式。 金属氧化物优选根据原子层沉积（ALD）的原理使用金属源化学品和氧源化学品沉积。 还原步骤优选在ALD反应器中使用一种或多种含有至少一种选自-OH，-CHO和-COOH的官能团的汽化有机化合物进行。

公开(公告)号：US06878628B2

公开(公告)日：2005-04-12

申请号：US09975466

申请日：2001-10-09

申请人： Auguste J. L. Sophie ,  Hessel Sprey ,  Pekka J. Soininen ,  Kai-Erik Elers

发明人： Auguste J. L. Sophie ,  Hessel Sprey ,  Pekka J. Soininen ,  Kai-Erik Elers

IPC分类号： H01L21/285 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/44 ,  B05D5/12

CPC分类号： H01L21/76829 ,  H01L21/02074 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02301 ,  H01L21/7681 ,  H01L21/76883

摘要： The invention relates generally to improved silicon carbide deposition during dual damascene processing. In one aspect of the invention, copper oxide present on a substrate is reduced at least partially to copper prior to deposition of a silicon carbide or silicon oxycarbide layer thereon. In the preferred embodiment the reduction is accomplished by contacting the substrate with one or more organic reducing agents. The reduction process may be carried out in situ, in the same reaction chamber as subsequent processing steps. Alternatively, it may be carried out in a module of a cluster tool.

摘要翻译： 本发明一般涉及在双镶嵌加工过程中改进的碳化硅沉积。 在本发明的一个方面，在其上沉积碳化硅或碳氧化硅层之前，存在于基底上的氧化铜至少部分地被还原成铜。 在优选的实施方案中，通过使底物与一种或多种有机还原剂接触来实现还原。 还原过程可以在与后续处理步骤相同的反应室中原位进行。 或者，它可以在集群工具的模块中执行。

公开(公告)号：US07955979B2

公开(公告)日：2011-06-07

申请号：US12039689

申请日：2008-02-28

申请人： Juhana Kostamo ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Suvi Haukka

发明人： Juhana Kostamo ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Suvi Haukka

IPC分类号： H01L21/31 ,  H01L21/44 ,  H01L21/8238

CPC分类号： H01L21/76843 ,  C23C16/40 ,  C23C16/406 ,  C23C16/408 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76886

摘要： A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.

摘要翻译： 形成导电薄膜的方法包括通过原子层沉积（ALD）工艺在基底上沉积金属氧化物薄膜。 该方法还包括通过将金属氧化物薄膜暴露于还原剂中至少部分还原金属氧化物薄膜，从而形成种子层。 在一种布置中，还原剂包含一种或多种含有至少一个选自-OH，-CHO和-COOH的官能团的有机化合物。 在另一种布置中，还原剂包括电流。

公开(公告)号：US07494927B2

公开(公告)日：2009-02-24

申请号：US10394430

申请日：2003-03-20

申请人： Juhana Kostamo ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Suvi Haukka

发明人： Juhana Kostamo ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Suvi Haukka

IPC分类号： H01L21/31 ,  H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/40 ,  C23C16/406 ,  C23C16/408 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76886

摘要： A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.

摘要翻译： 形成导电薄膜的方法包括通过原子层沉积（ALD）工艺在基底上沉积金属氧化物薄膜。 该方法还包括通过将金属氧化物薄膜暴露于还原剂中至少部分还原金属氧化物薄膜，从而形成种子层。 在一种布置中，还原剂包含一种或多种含有至少一个选自-OH，-CHO和-COOH的官能团的有机化合物。 在另一种布置中，还原剂包括电流。