公开(公告)号：US20060234408A1

公开(公告)日：2006-10-19

申请号：US11401329

申请日：2006-04-11

申请人： Jae Lee ,  Yong Kim ,  Hyung Back ,  Moon Kong ,  Dong Kim

发明人： Jae Lee ,  Yong Kim ,  Hyung Back ,  Moon Kong ,  Dong Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/20 ,  H01L33/405 ,  H01L2933/0083

摘要： The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.

摘要翻译： 本发明提供一种提高外部提取效率的垂直III族氮化物发光器件及其制造方法。 该方法包括在碱性衬底上形成未掺杂的GaN层和绝缘层。 然后，绝缘层被选择性地蚀刻以形成绝缘图案，并且n掺杂的Al x（1-xy） N层，有源层和p掺杂的Al N n N n层（1-mn）N层依次形成在绝缘层 模式。 导电衬底形成在p掺杂的Al（n-n）N层上。 去除基本衬底，未掺杂的GaN层和绝缘图案，并且在n掺杂的Al x Ga y y y的暴露表面的一部分上形成n电极， （1-xy）N层。

公开(公告)号：US20060192206A1

公开(公告)日：2006-08-31

申请号：US11150288

申请日：2005-06-13

申请人： Moon Kong ,  Yong Kim ,  Jae Lee ,  Hyung Back

发明人： Moon Kong ,  Yong Kim ,  Jae Lee ,  Hyung Back

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/08 ,  H01L33/20 ,  H01L33/405 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Disclosed herein is a flip-chip type nitride semiconductor light emitting diode. The light emitting diode comprises an n-type nitride semiconductor layer formed on a transparent substrate and having a substantially rectangular upper surface, an n-side electrode which comprises at least one bonding pad adjacent to at least one corner of the upper surface of the n-type nitride semiconductor layer, extended electrodes formed in a band from the bonding pad along four sides of the upper surface of the n-type nitride semiconductor layer and one or more fingers extended in a diagonal direction of the upper surface from the bonding pad and/or the extended electrodes, an active layer and a p-type nitride semiconductor layer sequentially stacked on a region of the n-type nitride semiconductor layer where the n-side electrode is not formed, and a highly reflective ohmic contact layer formed on the p-type nitride semiconductor layer.

摘要翻译： 本文公开了倒装芯片型氮化物半导体发光二极管。 发光二极管包括形成在透明基板上并具有基本上矩形的上表面的n型氮化物半导体层，n侧电极包括与n的上表面的至少一个角相邻的至少一个焊盘 型氮化物半导体层，从接合焊盘沿着n型氮化物半导体层的上表面的四边形成的带状的延伸电极和从接合焊盘沿上表面的对角线方向延伸的一个或多个指状物， 或者在n型氮化物半导体层的未形成n侧电极的区域上依次堆叠的延伸电极，有源层和p型氮化物半导体层以及形成在该n型氮化物半导体层上的高反射欧姆接触层 p型氮化物半导体层。

公开(公告)号：US20060225644A1

公开(公告)日：2006-10-12

申请号：US11398713

申请日：2006-04-06

申请人： Jae Lee ,  Yong Kim ,  Hyung Back ,  Moon Kong ,  Dong Kim

发明人： Jae Lee ,  Yong Kim ,  Hyung Back ,  Moon Kong ,  Dong Kim

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/32

摘要： A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.

摘要翻译： 提供了垂直III族氮化物发光器件及其制造方法。 发光器件包括：导电衬底; 层叠在导电性基板上的p型覆层; 堆叠在p型覆盖层上的有源层; 层叠在有源层上的n掺杂的Al x Ga y In 1 N x N y N n层; 堆叠在n掺杂层上的未掺杂的GaN层; 以及形成在未掺杂的GaN层上的n电极。 未掺杂的GaN层在其顶表面上形成粗糙图案。

公开(公告)号：US20060249736A1

公开(公告)日：2006-11-09

申请号：US11414371

申请日：2006-05-01

申请人： Jae Lee ,  Hyung Back ,  Moon Kong

发明人： Jae Lee ,  Hyung Back ,  Moon Kong

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/32 ,  H01L33/405

摘要： The present invention relates to a nitride semiconductor light emitting device. The nitride semiconductor light emitting device includes an n-type electrode; an n-type nitride semiconductor layer that is formed to come in contact with the n-type electrode; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the active layer; an undoped GaN layer that is formed on the p-type nitride semiconductor layer; an AlGaN layer that is formed on the undoped GaN layer so as to provide a two-dimensional electron gas layer to the interface with the undoped GaN layer; a reflecting layer that is formed on the AlGaN layer; a barrier that is formed so as to surround the reflecting layer; and a p-type electrode that is formed on the barrier.

摘要翻译： 本发明涉及一种氮化物半导体发光器件。 氮化物半导体发光器件包括n型电极; 形成为与n型电极接触的n型氮化物半导体层; 形成在n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 在p型氮化物半导体层上形成的未掺杂的GaN层; AlGaN层，形成在未掺杂的GaN层上，以便在与未掺杂的GaN层的界面上提供二维电子气层; 形成在AlGaN层上的反射层; 形成为围绕反射层的障碍物; 以及形成在屏障上的p型电极。

公开(公告)号：US20060033113A1

公开(公告)日：2006-02-16

申请号：US11064968

申请日：2005-02-25

申请人： Jae Lee ,  In Kim ,  Yong Kim ,  Hyun Kim ,  Moon Kong

发明人： Jae Lee ,  In Kim ,  Yong Kim ,  Hyun Kim ,  Moon Kong

IPC分类号： H01L33/00

CPC分类号： H01L33/387 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46

摘要： The present invention provides a flip chip-type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises a light transmittance substrate, an n-type nitride semiconductor layer, an active layer, a p-type nitride semiconductor layer and a mesh-type DBR reflecting layer. The mesh-type DBR reflecting layer has a plurality of open regions. The mesh-type DBR reflecting layer is composed of first and second nitride layers having different Al content. The first and second nitride layers are alternately stacked several times to form the mesh-type DBR reflecting layer. An ohmic contact layer is formed on the mesh-type DBR reflecting layer and on the p-type nitride semiconductor layer.

摘要翻译： 本发明提供一种倒装芯片型氮化物半导体发光二极管。 氮化物半导体发光二极管包括透光性基板，n型氮化物半导体层，有源层，p型氮化物半导体层和网状DBR反射层。 网状DBR反射层具有多个开放区域。 网状DBR反射层由具有不同Al含量的第一和第二氮化物层组成。 第一和第二氮化物层交替堆叠几次以形成网状DBR反射层。 在网状DBR反射层和p型氮化物半导体层上形成欧姆接触层。

公开(公告)号：US20060070395A1

公开(公告)日：2006-04-06

申请号：US11143458

申请日：2005-06-03

申请人： Jae Lee ,  Jae Lee ,  June Min

发明人： Jae Lee ,  Jae Lee ,  June Min

IPC分类号： F25D17/04 ,  F25D17/06

CPC分类号： F25D17/045 ,  F25D17/062 ,  F25D2317/0665 ,  F25D2317/067 ,  F25D2500/02

摘要： A refrigerator capable of adjusting a discharge position and a quantity of cold air discharged into the refrigerator. The refrigerator includes an inner panel installed at a rear surface of a storage chamber and having cold air outlets for forming a cooling channel. The refrigerator also includes a variable duct installed at one of the cold air outlets such that the variable duct can move back and forth to vary a length of the cooling channel, and a plurality of cold air distribution holes formed in the variable duct.

摘要翻译： 一种能够调节排出位置的冰箱以及排入冰箱的冷气的量。 冰箱包括安装在存储室的后表面的内板，并具有用于形成冷却通道的冷气出口。 冰箱还包括安装在一个冷气出口处的可变管道，使得可变管道可前后移动以改变冷却通道的长度，以及形成在可变管道中的多个冷气分配孔。

公开(公告)号：US20080036055A1

公开(公告)日：2008-02-14

申请号：US11365246

申请日：2006-03-01

申请人： Jae Yee ,  Young Chung ,  Jae Lee ,  Terry Davis ,  Chung Han ,  Jae Ku ,  Jae Kwak ,  Sang Ryu

发明人： Jae Yee ,  Young Chung ,  Jae Lee ,  Terry Davis ,  Chung Han ,  Jae Ku ,  Jae Kwak ,  Sang Ryu

IPC分类号： H01L23/495 ,  H01L21/98

CPC分类号： H01L23/3107 ,  H01L23/4951 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49551 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/05599 ,  H01L2224/29007 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A lead frame for making a semiconductor package is disclosed. The leadframe's leads include a lead lock provided at a free end of each inner lead that is adapted to increase a bonding force of the inner lead to a resin encapsulate, thereby effectively preventing a separation of the inner lead from occurring in a singulation process involved in the fabrication of the semiconductor package. A semiconductor package fabricated using the lead frame and a fabrication method for the semiconductor package are also disclosed. The lead frame includes a paddle, a plurality of tie bars for supporting the corners of the paddle, a plurality of leads arranged at each of four sides or two facing sides of the paddle in such a fashion that they are spaced apart from an adjacent side of the paddle while extending perpendicularly to the associated side of the paddle, each of the leads having lead separation preventing means adapted to increase a bonding force of the lead to a resin encapsulate subsequently molded to encapsulate the lead frame for fabrication of the semiconductor package, and dam bars for supporting the leads and the tie bars. Additional package embodiments include exposed protrusions extending downward from the leads. The exposed protrusions are irradiated with a laser to remove set resin prior to a solder ball attachment step.

摘要翻译： 公开了一种用于制造半导体封装的引线框架。 引线框架的引线包括提供在每个内引线的自由端处的引线锁，其适于增加内引线与树脂封装件的结合力，从而有效地防止内引线的分离在所涉及的单个加工过程中发生 制造半导体封装。 还公开了使用引线框制造的半导体封装和用于半导体封装的制造方法。 引线框架包括桨，用于支撑桨的角的多个连杆，多个引线，其布置在桨的四个侧面或两个相对的侧面中，使得它们与相邻侧面间隔开 的叶片，同时垂直于桨叶的相关侧延伸，每个引线具有引线分离防止装置，其适于增加引线与随后模制的树脂封装件的结合力，以封装引线框架以制造半导体封装， 和用于支撑引线和连接条的阻挡条。 另外的封装实施例包括从引线向下延伸的暴露突起。 在焊球附着步骤之前，用激光照射暴露的突起以去除固化树脂。

公开(公告)号：US20080014462A1

公开(公告)日：2008-01-17

申请号：US11861595

申请日：2007-09-26

申请人： Myung KIM ,  Hyung Oh ,  Jae Kyung ,  Sung Kim ,  Jae Lee ,  Young Han ,  Chun Park ,  Jong Yoon ,  Sae Park

发明人： Myung KIM ,  Hyung Oh ,  Jae Kyung ,  Sung Kim ,  Jae Lee ,  Young Han ,  Chun Park ,  Jong Yoon ,  Sae Park

IPC分类号： B32B9/00

CPC分类号： H01L51/5088 ,  H01L51/0052 ,  H01L51/0059 ,  H01L2251/5346 ,  Y10S428/917

摘要： An organic EL device is disclosed, which has an organic multilayer between a first electrode and a second electrode, the organic multilayer comprising a hole injection layer formed on the first electrode, and formed of a mixture of at least one selected from organic materials and at least one selected from inorganic materials; a hole transport layer having at least one layer on the hole injection layer; and an emitting layer formed on the hole transport layer.

摘要翻译： 公开了一种有机EL器件，其在第一电极和第二电极之间具有有机多层，所述有机层包含在第一电极上形成的空穴注入层，并且由选自有机材料中的至少一种和 至少一种选自无机材料; 在空穴注入层上具有至少一层的空穴传输层; 以及形成在空穴传输层上的发光层。

公开(公告)号：US20080006048A1

公开(公告)日：2008-01-10

申请号：US11770526

申请日：2007-06-28

申请人： Jong YOON ,  Byeong Kang ,  Young Woo Kim ,  Sang Park ,  Jae Lee

发明人： Jong YOON ,  Byeong Kang ,  Young Woo Kim ,  Sang Park ,  Jae Lee

IPC分类号： F25C1/22

CPC分类号： F25D23/04 ,  F25C1/24 ,  F25C2305/022 ,  F25C2400/06 ,  F25C2400/12 ,  F25C2400/14 ,  F25C2500/06 ,  F25D2323/122

摘要： An ice tray assembly and a refrigerator having the same are disclosed. The ice tray assembly includes an outer case on which a water container is mounted, and an inner case detachably mounted in the outer case to include ice trays which are supplied with water from the water container. The ice tray assembly includes the inner case which is detachable therefrom, thereby facilitating washing. Further, the ice trays can be supplied with water at once without water leakage and ice cubes made in the ice trays can be separated from the ice trays at once.

摘要翻译： 公开了一种冰盘组件及其制造商。 冰盘组件包括安装有水容器的外壳和可拆卸地安装在外壳中的内壳，以包括从水容器供应水的冰盘。 冰盘组件包括可拆卸的内壳，从而便于洗涤。 此外，冰盘可以一次供水，没有漏水，冰盘中制成的冰块可以与冰盘一次分离。

公开(公告)号：US20080001556A1

公开(公告)日：2008-01-03

申请号：US11898312

申请日：2007-09-11

申请人： Hyun-Il Shin ,  Jae Lee ,  Chang-Ho Lee

发明人： Hyun-Il Shin ,  Jae Lee ,  Chang-Ho Lee

IPC分类号： H05B41/36

CPC分类号： H05B41/2855 ,  H05B37/03

摘要： A circuit for sensing an open-circuit lamp is provided. The circuit includes a reference voltage output unit, a voltage sensor, and a comparator. The reference voltage output unit provides a reference voltage. The voltage sensor detects a sensed voltage corresponding to a status of a lamp. The status of the lamp includes an open-circuit status and a closed-circuit status. The comparator compares the sensed voltage with the reference voltage and outputs a result indicating the status of the lamp.

摘要翻译： 提供了用于感测开路灯的电路。 电路包括参考电压输出单元，电压传感器和比较器。 参考电压输出单元提供参考电压。 电压传感器检测对应于灯状态的感测电压。 灯的状态包括开路状态和闭路状态。 比较器将检测到的电压与参考电压进行比较，并输出指示灯状态的结果。