公开(公告)号：US08615023B2

公开(公告)日：2013-12-24

申请号：US13283497

申请日：2011-10-27

申请人： Jong-Ee Oh ,  Sok-Kyu Lee ,  Min-Ho Cheong ,  Jee-Yon Choi ,  Jae-Woo Park ,  Hyun-Kyu Chung

发明人： Jong-Ee Oh ,  Sok-Kyu Lee ,  Min-Ho Cheong ,  Jee-Yon Choi ,  Jae-Woo Park ,  Hyun-Kyu Chung

IPC分类号： H04J3/24

CPC分类号： H04L1/0057 ,  H03M13/1102 ,  H03M13/23 ,  H03M13/6527 ,  H04L1/0068 ,  H04L1/0075 ,  H04L1/0083

摘要： Disclosed is an apparatus and method for transmitting/receiving data using a low-density parity check (LDPC) coding scheme in a communication system. The method includes generating a multi-user data packet containing data to be transmitted to a plurality of users, encoding the multi-user data packet as a BCC and an LDPC code, and transmitting the encoded multi-user data packet to the plurality of users. In the method, the encoding of the multi-user data packet encodes MPDU subframes corresponding to each of the plurality of users in the multi-user data packet as the LDPC code, and calculates information on a length in LDPC encoding, corresponding to the encoding of the multi-user data packet as the LDPC code.

摘要翻译： 公开了一种在通信系统中使用低密度奇偶校验（LDPC）编码方案发送/接收数据的装置和方法。 该方法包括生成包含要发送给多个用户的数据的多用户数据分组，将多用户数据分组编码为BCC和LDPC码，并将编码的多用户数据分组发送给多个用户 。 在该方法中，多用户数据分组的编码将与多用户数据分组中的多个用户中的每一个对应的MPDU子帧编码为LDPC码，并且计算与LDPC编码相对应的LDPC编码长度的信息 作为LDPC码的多用户数据分组。

公开(公告)号：US20080251221A1

公开(公告)日：2008-10-16

申请号：US12066415

申请日：2006-09-13

申请人： Jae-Woo Park

发明人： Jae-Woo Park

IPC分类号： A47C23/00 ,  A47C23/02

CPC分类号： A47H23/02 ,  A47H2023/003 ,  E06B9/264

摘要： The present invention relates to a blind type curtain, and more specifically to a blind type curtain, obtained by forming several blind unit pieces formed on rear surface of the textile curtain at regular interval, such that the functions such as light beam regulation, sight-blocking, soundproofing, anti-cold, and anti-rat can be performed, and the function such as interior can be simultaneously performed, by which these functions are further magnified, of which the manufacture and handling is easy, used as a combined use of indoor and outdoor, and which provides no concern about noise and breakage. That is, a membrane shaped blind unit piece 2 is prepared by forming several blind unit pieces protrusively formed in a row direction at regular interval, preparing a connecting yarn on rear side of the blind unit piece, weaving the upper and lower end of the connecting yarn with the upper and lower end of a space of rear side of the blind unit piece to maintain the protrusion of the unit piece, and folding the lower end of the blind unit piece 2 forcibly.

摘要翻译： 盲型帘幕技术领域本发明涉及一种盲型帘幕，更具体地涉及一种盲型帘幕，其通过以规则的间隔形成形成在纺织品窗帘的后表面上的若干个单元片而获得，使得诸如光束调节， 可以进行阻隔，隔音，防冷和抗大鼠，并且可以同时执行诸如内部的功能，通过这些功能进一步放大，其制造和处理容易，用作组合使用 室内和室外，不关心噪音和破损。 也就是说，通过以规则的间隔形成沿行方向突出形成的多个盲单元件来制备膜形盲单元件2，在盲单元件的后侧准备连接纱线，编织连接的上下端 纱线，其具有盲单元件的后侧的空间的上端和下端，以保持单元件的突起，并且强制地折叠盲单元件2的下端。

公开(公告)号：US20080237595A1

公开(公告)日：2008-10-02

申请号：US12058399

申请日：2008-03-28

申请人： Jae-Woo Park ,  Seunghyup Yoo

发明人： Jae-Woo Park ,  Seunghyup Yoo

IPC分类号： H01L29/04 ,  H01L21/02

CPC分类号： H01L29/7869

摘要： Disclosed herein is a method of manufacturing a thin film transistor including titanium oxides as an active layer and the structure of the thin film transistor film manufactured using the method. The thin film transistor includes: a substrate; an active layer formed on the substrate using polycrystalline or amorphous titanium oxides; and an insulating layer formed on the active layer. Further, the method of manufacturing the thin film transistor includes: forming a substrate; forming an active layer on the substrate using polycrystalline or amorphous titanium oxides; and forming an insulating layer on the active layer. The present invention is advantageous in that the performance of the thin film transistor can be improved, the thin film transistor can be manufactured at low cost, harmful environmental problems can be solved, and the thin film transistor can be widely applied to various electronic apparatuses including, but not limited to, integrated drivers in active-matrix displays and transparent electronic devices.

摘要翻译： 本发明公开了一种制造薄膜晶体管的方法，该薄膜晶体管包括钛氧化物作为有源层，以及使用该方法制造的薄膜晶体管膜的结构。 薄膜晶体管包括：基板; 使用多晶或无定形钛氧化物在所述衬底上形成的有源层; 以及形成在有源层上的绝缘层。 此外，制造薄膜晶体管的方法包括：形成衬底; 使用多晶或无定形钛氧化物在衬底上形成有源层; 以及在所述有源层上形成绝缘层。 本发明的优点在于，可以提高薄膜晶体管的性能，可以以低成本制造薄膜晶体管，可以解决有害的环境问题，并且薄膜晶体管可以广泛地应用于各种电子设备，包括 但不限于有源矩阵显示器和透明电子设备中的集成驱动器。

公开(公告)号：US09245966B2

公开(公告)日：2016-01-26

申请号：US13242257

申请日：2011-09-23

申请人： Jae-Woo Park ,  Sung-Haeng Cho ,  Kyong-Sub Kim ,  Dong-Yeon Cho

发明人： Jae-Woo Park ,  Sung-Haeng Cho ,  Kyong-Sub Kim ,  Dong-Yeon Cho

IPC分类号： H01L29/49 ,  H01L29/45 ,  H01L29/786

CPC分类号： H01L29/45 ,  H01L29/458 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869

摘要： A thin film transistor includes a gate electrode, a gate insulating layer on the gate electrode, a semiconductor on the gate insulating layer, and a drain electrode and a source electrode on the semiconductor and spaced apart from each other. Each of the drain electrode and the source electrode includes a first metal diffusion preventing layer which prevents diffusion of metal atoms, and a second metal diffusion preventing layer on the first metal diffusion preventing layer. At least one of the first and second metal diffusion preventing layers includes grains in a columnar structure, which are in a direction substantially perpendicular to a lower layer. First grain boundaries of the first metal diffusion preventing layer and second grain boundaries of the second metal diffusion preventing layer are substantially discontinuous in a direction perpendicular to the semiconductor.

摘要翻译： 薄膜晶体管包括栅电极，栅电极上的栅极绝缘层，栅极绝缘层上的半导体，以及半导体上的间隔开的漏电极和源电极。 漏电极和源电极中的每一个包括防止金属原子扩散的第一金属扩散防止层和第一金属扩散防止层上的第二金属扩散防止层。 第一和第二金属扩散防止层中的至少一个包括柱状结构中的大致垂直于下层的方向的晶粒。 第一金属扩散防止层的第一晶界和第二金属扩散防止层的第二晶界在垂直于半导体的方向上基本上不连续。

公开(公告)号：US20150163656A1

公开(公告)日：2015-06-11

申请号：US14009227

申请日：2011-10-19

申请人： Hee-Jong Son ,  Han-Koon Nam ,  Sung-Man Park ,  Jae-Woo Park ,  Hyuk-Soo Jin

发明人： Hee-Jong Son ,  Han-Koon Nam ,  Sung-Man Park ,  Jae-Woo Park ,  Hyuk-Soo Jin

IPC分类号： H04W8/02

CPC分类号： H04L61/2521 ,  H04L61/2015 ,  H04L61/6022 ,  H04W8/26 ,  H04W84/12

摘要： A wireless local area network (WLAN) system is disclosed. The WLAN system includes a first access point (AP), and a second AP which has a same service set identifier (SSID) as that of the first AP, wherein the first AP and the second AP are configured to respectively perform a network address translation (NAT) and have a same virtual media access control (MAC) address. The WLAN system according to the present disclosure supports successful roaming between APs which belong to different networks regardless of the type of the wireless terminal.

摘要翻译： 公开了一种无线局域网（WLAN）系统。 WLAN系统包括第一接入点（AP）和具有与第一AP相同的服务集标识符（SSID）的第二AP，其中，第一AP和第二AP被配置为分别执行网络地址转换 （NAT）并具有相同的虚拟媒体访问控制（MAC）地址。 根据本公开的WLAN系统支持属于不同网络的AP之间的成功漫游，而不管无线终端的类型如何。

公开(公告)号：US08934305B2

公开(公告)日：2015-01-13

申请号：US13479467

申请日：2012-05-24

申请人： Jae-Woo Park ,  Jung-No Im

发明人： Jae-Woo Park ,  Jung-No Im

IPC分类号： G11C16/34 ,  G11C16/06 ,  G11C16/10 ,  G11C11/56 ,  G11C16/04

CPC分类号： G11C16/3459 ,  G11C11/5628 ,  G11C16/0483

摘要： A nonvolatile memory device and a method of operating the same are provided. The method includes performing a plurality of program operations on a plurality of memory cells each to be programmed to one of a plurality of program states, performing a program-verify operation on programmed memory cells associated with each of the plurality of program states, the program-verify operation comprises, selecting one of the plurality of offsets based on a noise level of a common source line associated with a programmed memory cell, using the selected offset to select one of a first verify voltage and a second verify voltage higher than the first verify voltage, and verifying a program state of the programmed memory cell using the first verify voltage and the second verify voltage.

摘要翻译： 提供一种非易失性存储器件及其操作方法。 该方法包括对多个存储器单元执行多个编程操作，每个存储器单元被编程为多个程序状态中的一个，对与多个程序状态中的每一个相关联的程序存储单元执行程序验证操作，该程序 - 验证操作包括：使用所选择的偏移量，基于与编程的存储器单元相关联的公共源极线的噪声电平来选择所述多个偏移中的一个，以选择第一验证电压和高于所述第一验证电压的第二验证电压 验证电压，以及使用第一验证电压和第二验证电压来验证编程的存储器单元的编程状态。

公开(公告)号：US08559235B2

公开(公告)日：2013-10-15

申请号：US13045661

申请日：2011-03-11

申请人： Chi Weon Yoon ,  Donghyuk Chae ,  Jae-Woo Park ,  Sang-Wan Nam

发明人： Chi Weon Yoon ,  Donghyuk Chae ,  Jae-Woo Park ,  Sang-Wan Nam

IPC分类号： G11C11/34

CPC分类号： G11C16/3445 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/16 ,  H01L29/792

摘要： A method of operating a non-volatile memory device includes performing an erasing operation to memory cells associated with a plurality of string selection lines (SSLs), the memory cells associated with the plurality of SSLs constituting a memory block, and verifying the erasing operation to second memory cells associated with a second SSL after verifying the erasing operation to first memory cells associated with a first SSL.

公开(公告)号：US08514621B2

公开(公告)日：2013-08-20

申请号：US13089639

申请日：2011-04-19

申请人： Ki Hwan Choi ,  Sung Soo Lee ,  Jae-Woo Park ,  Sang-Hyun Joo

发明人： Ki Hwan Choi ,  Sung Soo Lee ,  Jae-Woo Park ,  Sang-Hyun Joo

IPC分类号： G11C11/34 ,  G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/3436

摘要： A programming method for a nonvolatile memory device includes performing a LSB programming operation programming all LSB logical pages, and thereafter performing a MSB programming operation programming all MSB logical pages, wherein during the LSB programming operation a selected MLC is programmed to a negative intermediate program state. A program sequence for the LSB and MSB programming operations may be sequential or non-sequential in relation to an order arranged of word lines.

摘要翻译： 用于非易失性存储器件的编程方法包括执行编程所有LSB逻辑页的LSB编程操作，并且此后执行MSB编程操作编程所有MSB逻辑页，其中在LSB编程操作期间，所选择的MLC被编程为负的中间程序状态 。 用于LSB和MSB编程操作的程序序列可以是与字线布置的顺序相关或非顺序的。

公开(公告)号：US07826276B2

公开(公告)日：2010-11-02

申请号：US12003381

申请日：2007-12-21

申请人： Jae-Woo Park ,  Bong-soon Lim

发明人： Jae-Woo Park ,  Bong-soon Lim

IPC分类号： G11C7/10

CPC分类号： G11C16/10 ,  G11C16/3454 ,  G11C2216/14

摘要： Provided are a non-volatile memory device in which time required for programming may be saved, and a method of driving the same. The non-volatile memory device may include a memory cell array with a plurality of memory cells; an input/output buffer having a storage unit that stores data and indicator bits representing information regarding the data; a data scanning unit that receives the stored data from the input/output buffer in units of scanning, and that scans the received data, the received data being selectively programmed in the memory cells according to a result of scanning the data; and/or a control logic unit that controls the data stored in the input/output buffer in units of scanning to be selectively supplied to the data scanning unit based on the states of the indicator bits.

摘要翻译： 提供了可以节省编程所需的时间的非易失性存储器件及其驱动方法。 非易失性存储器件可以包括具有多个存储单元的存储单元阵列; 具有存储单元的输入/输出缓冲器，该存储单元存储表示关于数据的信息的数据和指示符位; 数据扫描单元，其以扫描为单位从输入/输出缓冲器接收存储的数据，并且根据扫描数据的结果扫描接收到的数据，该接收数据被选择性地编程在存储器单元中; 和/或控制逻辑单元，其基于指示符位的状态，以扫描为单位控制存储在输入/输出缓冲器中的数据以选择性地提供给数据扫描单元。

公开(公告)号：US07704646B2

公开(公告)日：2010-04-27

申请号：US11268032

申请日：2005-11-07

申请人： Sang-Uk Park ,  Kap-Seok Kang ,  Keun-Sik Lee ,  Jae-Woo Park ,  Yu-Kyung Sim

发明人： Sang-Uk Park ,  Kap-Seok Kang ,  Keun-Sik Lee ,  Jae-Woo Park ,  Yu-Kyung Sim

IPC分类号： G03F1/08 ,  G03F1/14

CPC分类号： G03F1/54 ,  G03F1/50

摘要： A half tone mask having a transparent substrate, a light semitransmission layer, and a light shield layer; and a method for fabricating the same. The halftone mask is applied to multiple cycles of a photolithography process, thus shortening a time taken to fabricate the mask and reducing the production costs of the mask. Since a desired pattern is uniformly formed through a light semitransmission layer of the half tone mask of the present invention according to the uniformity of a chrome oxide (CrxOy) film, i.e., the uniformity in sputtering, the halftone mask is not limited in size.

摘要翻译： 具有透明基板，光半透明层和遮光层的半色调掩模; 及其制造方法。 将半色调掩模应用于光刻工艺的多个循环，从而缩短制造掩模所需的时间并降低掩模的生产成本。 由于根据铬氧化物（CrxOy）膜的均匀性即溅射的均匀性，通过本发明的半色调掩模的半透射层均匀地形成期望的图案，所以半色调掩模的尺寸没有限制。