公开(公告)号：US07067856B2

公开(公告)日：2006-06-27

申请号：US10768108

申请日：2004-02-02

申请人： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt ,  Kurt Williamson Eisenbeiser

发明人： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt ,  Kurt Williamson Eisenbeiser

IPC分类号： H01L31/072

CPC分类号： H01S5/0261 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30 ,  H01L2924/0002 ,  H01S5/021 ,  H01L2924/00

摘要： High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

公开(公告)号：US06392257B1

公开(公告)日：2002-05-21

申请号：US09502023

申请日：2000-02-10

申请人： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt ,  Kurt William Eisenbeiser

发明人： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt ,  Kurt William Eisenbeiser

IPC分类号： H01L2904

CPC分类号： H01S5/0261 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30 ,  H01L2924/0002 ,  H01S5/021 ,  H01L2924/00

摘要： High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

摘要翻译： 通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶化合物半导体层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。

公开(公告)号：US06472276B1

公开(公告)日：2002-10-29

申请号：US09908902

申请日：2001-07-20

申请人： Lyndee L. Hilt ,  Ravindranath Droopad

发明人： Lyndee L. Hilt ,  Ravindranath Droopad

IPC分类号： H01L21336

CPC分类号： H01S5/0206 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02694 ,  H01L21/31691 ,  H01L33/005 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/0212 ,  H01S5/0261 ,  H01S5/183

摘要： A composite semiconductor including silicon and compound semiconductor, and having a silicate layer for promoting layer-by-layer monocrystalline growth. Silicon may be introduced to react with the monocrystalline oxide layer to form the silicate layer. During the fabrication process, the thickness of the amorphous oxide layer may be increased by suitable methods, such as annealing or oxygen diffusion.

摘要翻译： 包括硅和化合物半导体的复合半导体，并且具有用于促进逐层单晶生长的硅酸盐层。 可以引入硅以与单晶氧化物层反应以形成硅酸盐层。 在制造过程中，非晶氧化物层的厚度可以通过合适的方法如退火或氧气扩散来增加。

公开(公告)号：US06583034B2

公开(公告)日：2003-06-24

申请号：US09740219

申请日：2000-12-18

申请人： Jamal Ramdani ,  Lyndee L. Hilt

发明人： Jamal Ramdani ,  Lyndee L. Hilt

IPC分类号： H01L2120

CPC分类号： H01L21/02381 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02546 ,  Y10T29/41

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. A monocrystalline graded layer, in which the lattice constant varies with the thickness of the layer, is then formed over the accommodating buffer layer, such that a lattice constant of the top of the graded layer substantially matches the lattice constant of a subsequently grown monocrystalline film.

公开(公告)号：US07211852B2

公开(公告)日：2007-05-01

申请号：US11117349

申请日：2005-04-29

申请人： Jamal Ramdani ,  Lyndee L. Hilt

发明人： Jamal Ramdani ,  Lyndee L. Hilt

IPC分类号： H01L29/76

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/31691 ,  H01L21/3185

摘要： High quality epitaxial layers of GaN can be grown overlying large silicon wafers (200) by forming an amorphous layer (210) on the substrate. The amorphous layer dissipates strain and permits the growth of a high quality GaN layer (208). Any lattice mismatch between the GaN layer and the underlying substrate is taken care of by the amorphous layer.

摘要翻译： 通过在衬底上形成非晶层（210），可以将高质量的GaN外延层生长在大的硅晶片（200）上。 非晶层消散应变并允许生长高质量的GaN层（208）。 通过非晶层处理GaN层和下层衬底之间的任何晶格失配。