公开(公告)号：US07067856B2

公开(公告)日：2006-06-27

申请号：US10768108

申请日：2004-02-02

申请人： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt ,  Kurt Williamson Eisenbeiser

发明人： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt ,  Kurt Williamson Eisenbeiser

IPC分类号： H01L31/072

CPC分类号： H01S5/0261 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30 ,  H01L2924/0002 ,  H01S5/021 ,  H01L2924/00

摘要： High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

公开(公告)号：US06392257B1

公开(公告)日：2002-05-21

申请号：US09502023

申请日：2000-02-10

申请人： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt ,  Kurt William Eisenbeiser

发明人： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt ,  Kurt William Eisenbeiser

IPC分类号： H01L2904

CPC分类号： H01S5/0261 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30 ,  H01L2924/0002 ,  H01S5/021 ,  H01L2924/00

摘要： High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

摘要翻译： 通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶化合物半导体层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。

公开(公告)号：US06583034B2

公开(公告)日：2003-06-24

申请号：US09740219

申请日：2000-12-18

申请人： Jamal Ramdani ,  Lyndee L. Hilt

发明人： Jamal Ramdani ,  Lyndee L. Hilt

IPC分类号： H01L2120

CPC分类号： H01L21/02381 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02546 ,  Y10T29/41

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. A monocrystalline graded layer, in which the lattice constant varies with the thickness of the layer, is then formed over the accommodating buffer layer, such that a lattice constant of the top of the graded layer substantially matches the lattice constant of a subsequently grown monocrystalline film.

公开(公告)号：US07211852B2

公开(公告)日：2007-05-01

申请号：US11117349

申请日：2005-04-29

申请人： Jamal Ramdani ,  Lyndee L. Hilt

发明人： Jamal Ramdani ,  Lyndee L. Hilt

IPC分类号： H01L29/76

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/31691 ,  H01L21/3185

摘要： High quality epitaxial layers of GaN can be grown overlying large silicon wafers (200) by forming an amorphous layer (210) on the substrate. The amorphous layer dissipates strain and permits the growth of a high quality GaN layer (208). Any lattice mismatch between the GaN layer and the underlying substrate is taken care of by the amorphous layer.

摘要翻译： 通过在衬底上形成非晶层（210），可以将高质量的GaN外延层生长在大的硅晶片（200）上。 非晶层消散应变并允许生长高质量的GaN层（208）。 通过非晶层处理GaN层和下层衬底之间的任何晶格失配。

公开(公告)号：US06709989B2

公开(公告)日：2004-03-23

申请号：US09885409

申请日：2001-06-21

申请人： Jamal Ramdani ,  Ravindranath Droopad ,  Zhiyi Yu

发明人： Jamal Ramdani ,  Ravindranath Droopad ,  Zhiyi Yu

IPC分类号： H01L2100

CPC分类号： H01L21/3141 ,  H01L21/02172 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/316 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31645 ,  H01L21/31691

摘要： A method of fabricating a semiconductor structure including the steps of: providing a silicon substrate having a surface; forming by atomic layer deposition a monocrystalline seed layer on the surface of the silicon substrate; and forming by atomic layer deposition one or more layers of a monocrystalline high dielectric constant oxide on the seed layer, where providing a substrate includes providing a substrate having formed thereon a silicon oxide, and wherein forming by atomic layer deposition a seed layer further includes depositing a layer of a metal oxide onto a surface of the silicon oxide, flushing the layer of metal oxide with an inert gas, and reacting the metal oxide and the silicon oxide to form a monocrystalline silicate.

摘要翻译： 一种制造半导体结构的方法，包括以下步骤：提供具有表面的硅衬底;通过原子层沉积在硅衬底的表面上形成单晶种子层; 并且通过原子层沉积形成在种子层上的单晶高介电常数氧化物的一层或多层，其中提供衬底包括提供其上形成有氧化硅的衬底，并且其中通过原子层沉积形成晶种层还包括沉积 在氧化硅表面上的金属氧化物层，用惰性气体冲洗金属氧化物层，并使金属氧化物和氧化硅反应形成单晶硅酸盐。

公开(公告)号：US06291319B1

公开(公告)日：2001-09-18

申请号：US09465622

申请日：1999-12-17

申请人： Zhiyi Yu ,  Jun Wang ,  Ravindranath Droopad ,  Jamal Ramdani

发明人： Zhiyi Yu ,  Jun Wang ,  Ravindranath Droopad ,  Jamal Ramdani

IPC分类号： H01L2120

CPC分类号： H01L21/318 ,  C30B23/02 ,  C30B29/16 ,  C30B29/32 ,  H01L21/3144 ,  H01L21/31691 ,  H01L28/56

摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, nitrogen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSi[N1−Ox]2, where M is a metal and X is 0≦X

摘要翻译： 一种制造半导体结构的方法包括以下步骤：提供具有表面（12）的硅衬底（10）; 在所述硅衬底的表面上形成包含硅，氮和金属的单原子层的界面（14）; 以及在界面上形成一层或多层单晶氧化物（26）。 该界面包括硅，氮和MSiN 2形式的金属的原子层，其中M是金属。 在第二个实施方案中，界面包括形式为MSi [N1-Ox] 2的硅，金属以及氮和氧的混合物的原子层，其中M是金属，X是0 <= X <1。

公开(公告)号：US06270568B1

公开(公告)日：2001-08-07

申请号：US09354173

申请日：1999-07-15

申请人： Ravindranath Droopad ,  Zhiyi Yu ,  Jamal Ramdani

发明人： Ravindranath Droopad ,  Zhiyi Yu ,  Jamal Ramdani

IPC分类号： C30B100

CPC分类号： H01L28/56 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/31691

摘要： A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming an interface including a seed layer (18) adjacent to the surface (12) of the silicon substrate (10), forming a buffer layer (20) utilizing molecular oxygen; and forming one or more layers of a high dielectric constant oxide (22) on the buffer layer (20) utilizing activated oxygen.

摘要翻译： 一种制造半导体结构的方法，包括以下步骤：提供具有表面（12）的硅衬底（10）; 形成包括与所述硅衬底（10）的所述表面（12）相邻的晶种层（18）的界面，使用分子氧形成缓冲层（20）; 以及使用活性氧在缓冲层（20）上形成一层或多层高介电常数氧化物（22）。

公开(公告)号：US06241821B1

公开(公告)日：2001-06-05

申请号：US09273929

申请日：1999-03-22

申请人： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Daniel Overgaard ,  Jamal Ramdani ,  Jay A. Curless ,  Jerald A. Hallmark ,  William J. Ooms ,  Jun Wang

发明人： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Daniel Overgaard ,  Jamal Ramdani ,  Jay A. Curless ,  Jerald A. Hallmark ,  William J. Ooms ,  Jun Wang

IPC分类号： C30B2514

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B29/30

摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.

公开(公告)号：US06319730B1

公开(公告)日：2001-11-20

申请号：US09354522

申请日：1999-07-15

申请人： Jamal Ramdani ,  Ravindranath Droopad ,  Zhiyi Yu

发明人： Jamal Ramdani ,  Ravindranath Droopad ,  Zhiyi Yu

IPC分类号： H01L2100

CPC分类号： H01L21/31691

摘要： A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming amorphous silicon dioxide (14) on the surface (12) of the silicon substrate (10); providing a metal oxide (18) on the amorphous silicon dioxide (14); heating the semiconductor structure to form an interface comprising a seed layer (20) adjacent the surface (12) of the silicon substrate (10); and forming one or more layers of a high dielectric constant oxide (22) on the seed layer (20).

摘要翻译： 一种制造半导体结构的方法，包括以下步骤：提供具有表面（12）的硅衬底（10）; 在所述硅衬底（10）的表面（12）上形成无定形二氧化硅（14）; 在所述无定形二氧化硅（14）上提供金属氧化物（18）; 加热半导体结构以形成包括邻近硅衬底（10）的表面（12）的晶种层（20）的界面; 以及在种子层（20）上形成一层或多层高介电常数氧化物（22）。

公开(公告)号：US07105866B2

公开(公告)日：2006-09-12

申请号：US10911624

申请日：2004-08-05

申请人： Nada El-Zein ,  Jamal Ramdani ,  Kurt Eisenbeiser ,  Ravindranath Droopad

发明人： Nada El-Zein ,  Jamal Ramdani ,  Kurt Eisenbeiser ,  Ravindranath Droopad

IPC分类号： H01L29/861

CPC分类号： H01L29/882 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605

摘要： High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

摘要翻译： 通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。