摘要:
A single chip display processor comprised of a dynamic random access memory (DRAM) for storing at least one of graphics and video pixel data, a pixel data unit (PDU) for processing the pixel data, integrated in the same integrated circuit (IC) chip as the DRAM, the IC chip further comprising a massively parallel bus for transferring blocks of pixel data at the same time from the DRAM to the PDU, whereby the PDU can process the blocks of pixel data for subsequent display of processed pixel data.
摘要:
A single chip display processor comprised of a dynamic random access memory (DRAM) for storing at least one of graphics and video pixel data, a pixel data unit (PDU) for processing the pixel data, integrated in the same integrated circuit (IC) chip as the DRAM, the IC chip further comprising a massively parallel bus for transferring blocks of pixel data at the same time from the DRAM to the PDU, whereby the PDU can process the blocks of pixel data for subsequent display of processed pixel data.
摘要:
A single chip display processor comprised of a dynamic random access memory (DRAM) for storing at least one of graphics and video pixel data, a pixel data unit (PDU) for processing the pixel data, integrated in the same integrated circuit (IC) chip as the DRAM, the IC chip further comprising a massively parallel bus for transferring blocks of pixel data at the same time from the DRAM to the PDU, whereby the PDU can process the blocks of pixel data for subsequent display of processed pixel data.
摘要:
A single chip display processor comprised of a dynamic random access memory (DRAM) for storing at least one of graphics and video pixel data, a pixel data unit (PDU) for processing the pixel data, integrated in the same integrated circuit (IC) chip as the DRAM, the IC chip further comprising a massively parallel bus for transferring blocks of pixel data at the same time from the DRAM to the PDU, whereby the PDU can process the blocks of pixel data for subsequent display of processed pixel data.
摘要:
A memory device with a dynamic random access memory (DRAM) having an array of a plurality of rows and columns of memory elements; a cache memory formed integrally with the DRAM and includinmg at least one register with a plurality of memory elements and connected in pitch-matched relation to the DRAM array, the number of memory elements in a row of the DRAM being n times the number of memory elements in the at least one register, n being an integer greater than or equal to 2; and a connector for connecting the at least one register to the DRAM, the connector for the at least one register being a bus having a width corresponding to the number of memory elements therein.
摘要:
A memory circuit with glitch-less transfer of timing information. In one embodiment, the invention is a memory circuit including a controller, multiple loads, a command link communicatively coupling the controller and the loads and a data link. The data link includes multiple data clocks and communicatively couples the controller and the multiple loads. In another embodiment, the invention transfers data between a memory controller and a RAM by coupling the controller and the RAM using a data bus and multiple clock lines. The invention transfers a read/write command from the controller to the RAM and then transfers data associated with the read/write command, clocking the data using one of the clock lines.
摘要:
A SLDRAM System is provided with a plurality of in-circuit, calibratable memory modules and a memory controller for issuing unicast and multicast command packets to the memory modules. Command packets are transmitted over a unidirectional command link that includes a complementary pair of command clock lines, a command FLAG line and a plurality of noncomplemented command bit lines. Each of the command clock lines, command bit lines and the FLAG line is a SLIO transmission line. Data transfer operations are carried out in response to the command packets over one or more bidirectional data links that each includes two complementary pairs of data clock lines, and a plurality of noncomplemented data bit lines. Each of the data clock lines and the data bit lines is a SLIO transmission line. Each SLIO transmission line is single-end terminated and preferably tapped into by way of stub resistors.
摘要:
An integrated matrix memory includes standard sub-blocks and a redundant block. Each of the standard sub-blocks has a fixed number of standard sub-blocks, and the redundant block has one or more redundant sub-blocks. For addressing there is provided a detector for the address of a faulty standard sub-block. In that case a redundant sub-block is selected. Selection is realized by way of a sub-bus which forms part of the data path. Thus, a redundant system is achieved in which delay is minimized.
摘要:
Using a NAND and a NOR gate as input gates provides a simple and efficient input buffer. In the input buffer circuit, a chip select signal is applied in inverted form to the NOR gate and in non-invented form to the NAND gate. The resulting input buffer is both simpler and faster than earlier circuits.
摘要:
A static RAM memory is optimized for speed. The memory is divided into major memory matrices and each major memory matrix is divided into memory blocks. The memory blocks are divided in groups that per group have address bits in common, which however are per group coupled to separate pads or sets of pads. These pads are interconnected on the package to common package pins.