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226 条记录 (耗时 0.056 秒)

    Multi-channel transistor with tunable hot carrier effect
    1.
    发明授权
    Multi-channel transistor with tunable hot carrier effect 有权
    具有可调热载流子效应的多通道晶体管

    公开(公告)号：US07224007B1

    公开(公告)日：2007-05-29

    申请号：US10873240

    申请日：2004-06-23

    申请人： James Pan ,  Andrew M. Waite

    发明人： James Pan ,  Andrew M. Waite

    IPC分类号： H01L29/768

    CPC分类号： H01L21/26586 ,  H01L21/2807 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/4983 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

    摘要： A multiple channel transistor provides a transistor with an improved drive current and speed by using tunable hot carrier effects. A thin gate oxide has a carrier confinement layer formed on top thereof. Holes produced by hot carrier effects are retained by the carrier confinement layer directly above the gate oxide layer. The holes switch on the bottom transistor of the multi-channel transistor, thereby increasing the drive current.

    摘要翻译： 多通道晶体管通过使用可调热载流子效应为晶体管提供了改进的驱动电流和速度。 薄栅氧化物在其顶部形成有载流子限制层。 由热载体效应产生的孔由栅极氧化物层正上方的载流子限制层保留。 空穴打开多通道晶体管的底部晶体管，从而增加驱动电流。

    Structure related to a thick bottom dielectric (TBD) for trench-gate devices
    3.
    发明授权
    Structure related to a thick bottom dielectric (TBD) for trench-gate devices 有权
    与沟槽栅极器件的厚底部电介质（TBD）有关的结构

    公开(公告)号：US08669623B2

    公开(公告)日：2014-03-11

    申请号：US12870600

    申请日：2010-08-27

    申请人： James Pan ,  Christopher Lawrence Rexer

    发明人： James Pan ,  Christopher Lawrence Rexer

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/7813 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/8725

    摘要： A semiconductor structure which includes a shielded gate FET is formed as follows. A plurality of trenches is formed in a semiconductor region using a mask. The mask includes (i) a first insulating layer over a surface of the semiconductor region, (ii) a first oxidation barrier layer over the first insulating layer, and (iii) a second insulating layer over the first oxidation barrier layer. A shield dielectric is formed extending along at least lower sidewalls of each trench. A thick bottom dielectric (TBD) is formed along the bottom of each trench. The first oxidation barrier layer prevents formation of a dielectric layer along the surface of the semiconductor region during formation of the TBD. A shield electrode is formed in a bottom portion of each trench. A gate electrode is formed over the shield electrode in each trench.

    摘要翻译： 包括屏蔽栅极的半导体结构如下形成。 使用掩模在半导体区域中形成多个沟槽。 掩模包括（i）半导体区域的表面上的第一绝缘层，（ii）第一绝缘层上的第一氧化阻挡层，以及（iii）第一氧化阻挡层上的第二绝缘层。 形成在每个沟槽的至少下侧壁延伸的屏蔽电介质。 沿每个沟槽的底部形成厚底部电介质（TBD）。 第一氧化阻挡层防止在形成TBD期间沿着半导体区域的表面形成电介质层。 屏蔽电极形成在每个沟槽的底部。 在每个沟槽中的屏蔽电极之上形成栅电极。

    Structure and method for semiconductor power devices
    4.
    发明授权
    Structure and method for semiconductor power devices 有权
    半导体功率器件的结构和方法

    公开(公告)号：US08541840B2

    公开(公告)日：2013-09-24

    申请号：US13028054

    申请日：2011-02-15

    申请人： James Pan

    发明人： James Pan

    IPC分类号： H01L27/12

    CPC分类号： H01L27/1203 ,  H01L21/743 ,  H01L21/8249 ,  H01L21/84 ,  H01L27/0623 ,  H01L27/0635 ,  H01L29/1087 ,  H01L29/4175 ,  H01L29/78624

    摘要： A semiconductor device includes a semiconductor-on-insulator region on a substrate. The semiconductor-on-insulator region includes a first semiconductor region overlying a dielectric region. The device includes an MOS transistor and a bipolar transistor. The MOS transistor has a drain region, a body region, and a source region in the first semiconductor region. The MOS transistor also includes a gate. The device also includes a second semiconductor region overlying the substrate and adjacent to the drain region, and a third semiconductor region overlying the substrate and adjacent to the second semiconductor region. The bipolar transistor includes has the drain region of the MOS transistor as an emitter, the second semiconductor region as a base, and the third semiconductor region as a collector. Accordingly, the drain of the MOS transistor also functions as the emitter of the bipolar transistor. Additionally, the gate and the base are coupled by a resistive element.

    摘要翻译： 半导体器件包括在衬底上的绝缘体上半导体区域。 绝缘体上半导体区域包括覆盖电介质区域的第一半导体区域。 该器件包括MOS晶体管和双极晶体管。 MOS晶体管在第一半导体区域中具有漏极区域，体区域和源极区域。 MOS晶体管还包括一个栅极。 该器件还包括覆盖衬底并且与漏极区相邻的第二半导体区域，以及覆盖衬底并与第二半导体区域相邻的第三半导体区域。 双极晶体管包括MOS晶体管的漏极区域作为发射极，第二半导体区域作为基极，第三半导体区域作为集电极。 因此，MOS晶体管的漏极也用作双极晶体管的发射极。 此外，栅极和基极通过电阻元件耦合。

    Novel Very Fast Optic Nonvolatile Memory with Alternative Carrier Lifetimes and Bandgap Energies, Optic Random Access, and Mirrored
    6.
    发明申请
    Novel Very Fast Optic Nonvolatile Memory with Alternative Carrier Lifetimes and Bandgap Energies, Optic Random Access, and Mirrored "Fly-back" Configurations 审中-公开
    具有替代载波寿命和带隙能量的新型非常快速的非易失性存储器，光学随机存取和镜像“反馈”配置

    公开(公告)号：US20120292676A1

    公开(公告)日：2012-11-22

    申请号：US13113048

    申请日：2011-05-21

    申请人： James Pan

    发明人： James Pan

    IPC分类号： H01L31/113

    CPC分类号： G11C13/047

    摘要： The present invention is for a fast optic nonvolatile memory cell (FONM) that operates with a speed >1000000 times faster than the commercially available FLASH memory. The information (or charges) can be entered into the FONM cell by switching on a built-in laser or LED (Light Emitting Diode). Excited by the lights, and driven by electric fields, the regions of low carrier lifetimes thermally generate excess electrons or positive charges to fill the storage gaps or interfaces. To detect the stored information, two BJTs (Bipolar Junction Transistors) are arranged in a mirrored configuration—with alternative regions of high or low carrier lifetimes and bandgap energies. By comparing the BJT “fly-back” characteristics a voltage difference can be detected as a signal of whether the information is stored or not stored.

    摘要翻译： 本发明用于快速光学非易失性存储单元（FONM），其以比市售的闪速存储器快1000000倍的速度运行。 通过打开内置激光或LED（发光二极管）可以将信息（或电荷）输入到FONM单元。 由光激发，由电场驱动，低载流子寿命的区域会产生过量的电子或正电荷，以填充储存间隙或界面。 为了检测存储的信息，两个BJT（双极结晶体管）被布置成镜像配置 - 具有高或低载波寿命和带隙能量的替代区域。 通过比较BJT回扫特性，可以检测电压差是否存储信息或不存储信息。

    UCP4
    9.
    发明授权
    UCP4 有权

    公开(公告)号：US08067229B2

    公开(公告)日：2011-11-29

    申请号：US11265966

    申请日：2005-11-03

    申请人： Sean Adams ,  James Pan ,  Alan Zhong

    发明人： Sean Adams ,  James Pan ,  Alan Zhong

    IPC分类号： C12N15/12 ,  C12N15/63 ,  C12N5/10 ,  C12N5/16

    CPC分类号： C07K14/4702 ,  A61K38/00 ,  A61K48/00 ,  C07K14/47 ,  C07K2319/00

    摘要： The present invention is directed to novel polypeptides having homology to certain human uncoupling proteins (“UCPs”) and to nucleic acid molecules encoding those polypeptides. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention, and methods for producing the polypeptides of the present invention.

    摘要翻译： 本发明涉及与某些人解偶联蛋白（“UCP”）和编码那些多肽的核酸分子具有同源性的新型多肽。 本文还提供了包含那些核酸序列的载体和宿主细胞，包含与异源多肽序列融合的本发明多肽的嵌合多肽分子，与本发明的多肽结合的抗体，以及本发明多肽的制备方法 发明。