Technique for reducing magnetic fields at an implant location
    2.
    发明授权
    Technique for reducing magnetic fields at an implant location 有权
    减少植入位置磁场的技术

    公开(公告)号:US07807983B2

    公开(公告)日:2010-10-05

    申请号:US11622619

    申请日:2007-01-12

    摘要: A technique for reducing magnetic fields at an implant location is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for reducing magnetic fields at an implant location. The apparatus and method may comprise a corrector-bar assembly comprising a set of magnetic core members, a plurality of coils distributed along the set of magnetic core members, and connecting elements to connect ends of the set of magnetic core members with each other to form a rectangular corrector-bar configuration. The corrector-bar assembly may be positioned at an exit region of a magnetic deflector to improve uniformity of a ribbon beam having a plurality of beamlets exiting from the magnetic deflector and the rectangular corrector-bar configuration may provide a desired magnetic field clamping action.

    摘要翻译: 公开了一种用于在植入位置减小磁场的技术。 在一个特定的示例性实施例中,该技术可以被实现为用于减少植入位置处的磁场的装置和方法。 该装置和方法可以包括校正棒组件,其包括一组磁芯构件,沿着该组磁芯构件分布的多个线圈,以及连接元件,用于将一组磁芯构件的端部彼此连接以形成 一个矩形校正器配置。 校正棒组件可以定位在磁偏转器的出口区域处,以改善具有从磁偏转器离开的多个子束的带状束的均匀性,并且矩形校正器配置可以提供期望的磁场夹紧动作。

    Technique for Reducing Magnetic Fields at an Implant Location
    3.
    发明申请
    Technique for Reducing Magnetic Fields at an Implant Location 有权
    在植入位置减少磁场的技术

    公开(公告)号:US20080169426A1

    公开(公告)日:2008-07-17

    申请号:US11622619

    申请日:2007-01-12

    IPC分类号: G21K1/093

    摘要: A technique for reducing magnetic fields at an implant location is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for reducing magnetic fields at an implant location. The apparatus and method may comprise a corrector-bar assembly comprising a set of magnetic core members, a plurality of coils distributed along the set of magnetic core members, and connecting elements to connect ends of the set of magnetic core members with each other to form a rectangular corrector-bar configuration. The corrector-bar assembly may be positioned at an exit region of a magnetic deflector to improve uniformity of a ribbon beam having a plurality of beamlets exiting from the magnetic deflector and the rectangular corrector-bar configuration may provide a desired magnetic field clamping action.

    摘要翻译: 公开了一种用于在植入位置减小磁场的技术。 在一个特定的示例性实施例中,该技术可以被实现为用于减少植入位置处的磁场的装置和方法。 该装置和方法可以包括校正棒组件,其包括一组磁芯构件,沿着该组磁芯构件分布的多个线圈,以及连接元件,以使该组磁芯构件的端部彼此连接以形成 一个矩形校正器配置。 校正棒组件可以定位在磁偏转器的出口区域处,以改善具有从磁偏转器离开的多个子束的带状束的均匀性,并且矩形校正器配置可以提供期望的磁场夹紧动作。

    End terminations for electrodes used in ion implantation systems
    5.
    发明授权
    End terminations for electrodes used in ion implantation systems 有权
    用于离子注入系统的电极的终端

    公开(公告)号:US08309935B2

    公开(公告)日:2012-11-13

    申请号:US12418053

    申请日:2009-04-03

    IPC分类号: H01J3/14

    摘要: An ion implantation system includes an electrostatic lens. The electrostatic lens includes a terminal electrode, a ground electrode and a suppression electrode disposed therebetween. An ion beam enters the electrostatic lens through the terminal electrode and exits through the ground electrode. The electrodes have associated electrostatic equipotentials. An end plate is disposed between a top and bottom portion of the suppression electrode and/or the top and bottom portion of the ground electrode. The respective end plate has a shape which corresponds to the electrostatic equipotential associated with the particular electrode in order to maintain uniformity of the beam as it passes through the electrostatic lens.

    摘要翻译: 离子注入系统包括静电透镜。 静电透镜包括端子电极,接地电极和设置在它们之间的抑制电极。 离子束通过端子电极进入静电透镜并通过接地电极离开。 电极具有相关的静电等电位。 端板设置在抑制电极的顶部和底部之间和/或接地电极的顶部和底部之间。 相应的端板具有对应于与特定电极相关联的静电等电位的形状,以便在光束通过静电透镜时保持光束的均匀性。

    END TERMINATIONS FOR ELECTRODES USED IN ION IMPLANTATION SYSTEMS
    6.
    发明申请
    END TERMINATIONS FOR ELECTRODES USED IN ION IMPLANTATION SYSTEMS 有权
    在离子植入系统中使用的电极的终止终止

    公开(公告)号:US20100252746A1

    公开(公告)日:2010-10-07

    申请号:US12418053

    申请日:2009-04-03

    IPC分类号: H01J3/14

    摘要: An ion implantation system includes an electrostatic lens. The electrostatic lens includes a terminal electrode, a ground electrode and a suppression electrode disposed therebetween. An ion beam enters the electrostatic lens through the terminal electrode and exits through the ground electrode. The electrodes have associated electrostatic equipotentials. An end plate is disposed between a top and bottom portion of the suppression electrode and/or the top and bottom portion of the ground electrode. The respective end plate has a shape which corresponds to the electrostatic equipotential associated with the particular electrode in order to maintain uniformity of the beam as it passes through the electrostatic lens.

    摘要翻译: 离子注入系统包括静电透镜。 静电透镜包括端子电极,接地电极和设置在它们之间的抑制电极。 离子束通过端子电极进入静电透镜并通过接地电极离开。 电极具有相关的静电等电位。 端板设置在抑制电极的顶部和底部之间和/或接地电极的顶部和底部之间。 相应的端板具有对应于与特定电极相关联的静电等电位的形状,以便在光束通过静电透镜时保持光束的均匀性。

    Beam neutralization in low-energy high-current ribbon-beam implanters
    7.
    发明授权
    Beam neutralization in low-energy high-current ribbon-beam implanters 有权
    在低能量大电流带状束注入机中的束中和

    公开(公告)号:US07439526B2

    公开(公告)日:2008-10-21

    申请号:US11312055

    申请日:2005-12-20

    IPC分类号: H01J37/317

    摘要: The fabrication of modern semiconducting integrated circuits often requires implantation steps that involve high currents of low-energy charged dopant atoms. When employing such beams, the addition of electrons or negative ions for neutralizing the effects of space charge is often crucial for achieving success. Without this supplement, ion beams can ‘blow-up’ causing loss of intensity and disruption of beam focusing. In the present disclosure, methods are presented for introducing and constraining neutralizing low-energy electrons and negative ions within the boundaries of ribbon beams within regions of magnetic field deflection. Apparatus is described for maintaining neutralization based upon a reduction of electron losses, plasma bridge connections and secondary electron production. As part of plasma introduction to the deflection region a novel cryogenic pumping apparatus selectively removes neutral atoms from a plasma stream.

    摘要翻译: 现代半导体集成电路的制造通常需要涉及高电流的低能带电掺杂原子的注入步骤。 当使用这种光束时,添加电子或负离子来中和空间电荷的作用对于获得成功往往是至关重要的。 没有这个补充,离子束可以“爆炸”,导致强度的损失和光束聚焦的破坏。 在本公开中,提出了用于在磁场偏转区域内的带状束的边界内引入和约束中和低能电子和负离子的方法。 描述了用于基于电子损耗,等离子体桥连接和二次电子产生的减少来维持中和的装置。 作为等离子体引入偏转区域的一部分,新型的低温泵送装置选择性地从等离子体流中除去中性原子。

    Resonance method for production of intense low-impurity ion beams of atoms and molecules
    8.
    发明授权
    Resonance method for production of intense low-impurity ion beams of atoms and molecules 有权
    用于生成原子和分子强度低杂质离子束的共振方法

    公开(公告)号:US07365340B2

    公开(公告)日:2008-04-29

    申请号:US11185141

    申请日:2005-07-20

    IPC分类号: H01J7/24

    摘要: The present invention comprehends a compact and economical apparatus for producing high intensities of a wide variety of wanted positive and negative molecular and atomic ion beams that have been previously impossible to previously produce at useful intensities. In addition, the invention provides a substantial rejection of companion background ions that are frequently simultaneously emitted with the wanted ions. The principle underlying the present invention is resonance ionization-transfer where energy differences between resonant and non-resonant processes are exploited to enhance or attenuate particular charge-changing processes. This new source technique is relevant to the fields of Accelerator Mass Spectroscopy; Molecular Ion Implantation; Generation of Directed Neutral Beams; and Production of Electrons required for Ion Beam Neutralization within magnetic fields. An example having commercial importance is ionization of the decaborane molecule, B10H14 where an almost perfect ionization resonance match occurs between decaborane molecules and arsenic atoms.

    摘要翻译: 本发明包括一种紧凑且经济的装置,用于产生以前不可能以有用强度预先产生的各种各样的所需正,负分子和原子离子束的强度。 此外,本发明提供了与所需离子频繁同时发射的伴随背景离子的显着排除。 本发明的基本原理是谐振电离转移,其中利用共振和非共振过程之间的能量差异来增强或减弱特定的电荷变化过程。 这种新的源技术与加速器质谱技术相关; 分子离子注入 定向中性梁的生成 和磁场中离子束中和所需的电子的生产。 具有商业重要性的实例是十硼烷分子的电离,其中在十硼烷分子和砷原子之间发生几乎完美的电离谐振匹配的B 10 H 14 N 14。

    Controlling the characteristics of implanter ion-beams
    9.
    发明授权
    Controlling the characteristics of implanter ion-beams 有权
    控制注入离子束的特性

    公开(公告)号:US07301156B2

    公开(公告)日:2007-11-27

    申请号:US11154085

    申请日:2005-06-16

    IPC分类号: H01L21/425

    摘要: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

    摘要翻译: 一种满足日益增长的要求的方法和装置,用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。 光学元件的设计成为可能:(1)宽幅调节工件上的带状光束的宽度; (2)纠正带状横梁宽度的强度分布不准确; (3)关于X轴和Y轴的独立转向; (4)工件入射角校正; 和(5)空间费用引起的光束膨胀效应的近似补偿。 在实际情况下,这些元件的组合允许源和工件之间的带状光束膨胀到350毫米,具有良好的均匀性和角度精度。 此外,该方法和装置可用于沿着光束线引入四极场。

    Technique for Improving Uniformity of a Ribbon Beam
    10.
    发明申请
    Technique for Improving Uniformity of a Ribbon Beam 有权
    提高丝带梁均匀性的技术

    公开(公告)号:US20070170369A1

    公开(公告)日:2007-07-26

    申请号:US11537011

    申请日:2006-09-29

    IPC分类号: H01J37/153

    摘要: A technique for improving uniformity of a ribbon beam is disclosed. In one particular exemplary embodiment, an apparatus may comprise a first corrector-bar assembly and a second corrector-bar assembly, wherein the second corrector-bar assembly is located at a predetermined distance from the first corrector-bar assembly. Each of a first plurality of coils in the first corrector-bar assembly may be individually excited to deflect at least one beamlet in the ribbon beam, thereby causing the beamlets to arrive at the second corrector-bar assembly in a desired spatial spread. Each of a second plurality of coils in the second corrector-bar assembly may be individually excited to further deflect one or more beamlets in the ribbon beam, thereby causing the beamlets to exit the second corrector-bar assembly at desired angles.

    摘要翻译: 公开了一种用于提高带状束的均匀性的技术。 在一个特定示例性实施例中,装置可以包括第一校正杆组件和第二校正杆组件,其中第二校正杆组件位于距离第一校正杆组件预定距离处。 第一校正棒组件中的第一组多个线圈中的每一个可以被单独地激发以偏转带束束中的至少一个子束,从而使子束以期望的空间扩展到达第二校正器组件。 可以单独地激励第二校正棒组件中的第二组多个线圈中的每一个以进一步偏转带状束中的一个或多个子束,从而使子束以期望的角度离开第二校正棒组件。