公开(公告)号：US07675047B2

公开(公告)日：2010-03-09

申请号：US11536992

申请日：2006-09-29

申请人： Svetlana B. Radovanov ,  Peter L. Kellerman ,  Victor M. Benveniste ,  Robert C. Lindberg ,  Kenneth H. Purser ,  Tyler B. Rockwell ,  James S. Buff ,  Anthony Renau

发明人： Svetlana B. Radovanov ,  Peter L. Kellerman ,  Victor M. Benveniste ,  Robert C. Lindberg ,  Kenneth H. Purser ,  Tyler B. Rockwell ,  James S. Buff ,  Anthony Renau

IPC分类号： H01J37/10 ,  H01J37/317

CPC分类号： H01J37/12 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/083 ,  H01J2237/121

摘要： A technique for shaping a ribbon-shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon-shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon-shaped ion beam.

摘要翻译： 公开了一种用于成形带状离子束的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于成形带状离子束的装置。 该设备可以包括具有用于带状离子束通过的基本上矩形的孔的静电透镜，其中多个聚焦元件沿着孔的短边缘定位，并且其中每个聚焦元件被单独偏置并定向成形 带状离子束。

公开(公告)号：US07598495B2

公开(公告)日：2009-10-06

申请号：US11739934

申请日：2007-04-25

申请人： Peter L. Kellerman ,  Victor M. Benveniste ,  Alexander S. Perel ,  Brian S. Freer ,  Michael A. Graf

发明人： Peter L. Kellerman ,  Victor M. Benveniste ,  Alexander S. Perel ,  Brian S. Freer ,  Michael A. Graf

IPC分类号： H01J3/18

CPC分类号： H01J37/3171 ,  H01J37/12 ,  H01J2237/022 ,  H01J2237/049

摘要： A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second surface of the center electrode is facing away from the entrance electrode and is approximately flat, an exit electrode positioned a distance downstream from the center electrode comprising an exit aperture and biased to a second base voltage, and wherein the first surface of the exit electrode is facing toward the center electrode and is approximately flat, wherein the second surface of the exit electrode is facing away from the center electrode and is approximately flat, wherein a first electrostatic field is generated from the entrance electrode toward the center electrode and a second electrostatic field is generated from the exit electrode toward the center electrode; wherein the second base voltage is greater than the center voltage, and an end station that is downstream from the beam line assembly and receives the ion beam.

摘要翻译： 一种用于离子注入的聚焦粒子捕获系统，包括产生离子束的离子束源，接收来自离子束源的离子束的束线组件，该束束组件包括选择性地通过选定离子的质量分析器，接收 离子束并且从离子束中除去包含入口电极并且被偏置到第一基极电压的入口电极的颗粒，其中入口电极的第一表面背离中心电极并且近似平坦，其中第二表面 所述入口电极面向所述中心电极并且是凹形的，其中所述中心电极位于与所述入口电极的下游距离的位置，所述入口电极包括中心孔并被偏压到中心电压，其中所述中心电压小于所述第一基极电压， 其中所述中心电极的所述第一表面面向所述入口电极并且被连接 vex，其中所述中心电极的所述第二表面背离所述入口电极并且近似平坦，所述出口电极在所述中心电极的下游距离包括出口孔并且被偏压到第二基极电压，并且其中所述第一表面 所述出射电极的面向所述中心电极并且近似平坦，其中所述出射电极的所述第二表面背离所述中心电极并且近似平坦，其中从所述入射电极朝向所述中心电极产生第一静电场 并且从出射电极向中心电极产生第二静电场; 其中所述第二基极电压大于所述中心电压，以及在所述束线组件的下游并接收所述离子束的端站。

公开(公告)号：US20090121149A1

公开(公告)日：2009-05-14

申请号：US11937849

申请日：2007-11-09

申请人： Svetlana Radovanov ,  Frank Sinclair ,  Peter L. Kellerman ,  Victor M. Benveniste ,  Robert Lindberg

发明人： Svetlana Radovanov ,  Frank Sinclair ,  Peter L. Kellerman ,  Victor M. Benveniste ,  Robert Lindberg

IPC分类号： H01J3/18

CPC分类号： H01J37/1477 ,  H01J37/12 ,  H01J37/1475 ,  H01J37/3171 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/24542 ,  H01J2237/31701

摘要： Techniques for shaping an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for shaping an ion beam. The apparatus may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the entrance electrode, an exit electrode biased at a second voltage potential, wherein the ion beam exits the exit electrode, and a first suppression electrode and a second suppression electrode positioned between the entrance electrode and the exit electrode, wherein the first suppression electrode and the second suppression electrode are independently biased to variably focus the ion beam.

摘要翻译： 公开了用于成形离子束的技术。 在一个特定的示例性实施例中，可以将技术实现为用于成形离子束的装置。 该装置可以包括偏置在第一电压电位的入口电极，其中离子束进入入口电极，偏置在第二电压电位的出射电极，其中离子束离开出射电极，并且第一抑制电极和第二抑制电极 位于所述入射电极和所述出射电极之间的抑制电极，其中所述第一抑制电极和所述第二抑制电极被独立地偏置以可变地聚焦所述离子束。

公开(公告)号：US5780863A

公开(公告)日：1998-07-14

申请号：US841725

申请日：1997-04-29

申请人： Victor M. Benveniste ,  Peter L. Kellerman

发明人： Victor M. Benveniste ,  Peter L. Kellerman

IPC分类号： C23C14/48 ,  H01J37/12 ,  H01J37/30 ,  H01J37/317 ,  H01L21/265 ,  H01J37/10

CPC分类号： H01J37/3171 ,  H01J37/3007 ,  H01J2237/047 ,  H01J2237/1207

摘要： An electrostatic triode lens (36) is provided for use in an ion implantation system (10). The lens includes a terminal electrode (37) and an adjustable lens subassembly (40) comprising a suppression electrode (38) and a resolving electrode (39), each having matched curved surfaces (108, 110). The lens subassembly is positioned near the terminal electrode where the beam has a minimal waist in a first (dispersive) plane. Such positioning minimizes the required gaps between electrodes, and thus, helps minimize beam blow-up and the electron depletion region in the deceleration mode of operation. The suppression and resolving electrodes each have first and second portions (38A and 38B, 39A and 39B) separated by a gap (d38, d39). A movement mechanism (60, 62) simultaneously moves the first portions of the suppression and resolving electrodes (38A, 39A) toward and away from the second portions of the suppression and resolving electrodes (38B, 39B), respectively, to adjust the gaps (d38, d39) therebetween. The adjustable lens subassembly (40) conditions the beam output by the terminal electrode (37) by (i) variably focusing the beam in mutually orthogonal (dispersive and non-dispersive) planes in a deceleration mode of operation (where mass resolution is less critical), while (ii) permitting variable mass resolution in the dispersive plane in an acceleration mode of operation (where focusing is less critical). Generally, the gap (d39) between the resolving electrode pair (39) is adjusted to permit adjustable mass resolution in the dispersive plane in the acceleration mode of operation. In the deceleration mode of operation, adjustment of the gap (d39) provides adjustable dispersive plane focusing, while the voltage on suppression electrode (38) is adjusted to permit adjustable non-dispersive plane beam focusing.

公开(公告)号：US5198676A

公开(公告)日：1993-03-30

申请号：US767027

申请日：1991-09-27

申请人： Victor M. Benveniste ,  Peter L. Kellerman ,  John J. Schussler

发明人： Victor M. Benveniste ,  Peter L. Kellerman ,  John J. Schussler

IPC分类号： G01T1/29 ,  C23C14/48 ,  H01J37/04 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/3171 ,  H01J2237/24465 ,  H01J2237/31703

摘要： An ion beam intensity and emittance measuring system. A substrate supports conductive zones or regions that are impacted by an ion beam. Periodically the conductive regions are discharged through an integrator circuit which produces an output corresponding to the charge buildup on the conductive region. By determining the charge for multiple such regions impacted by an ion beam, a two-dimensional mapping of ion beam intensity vs. position is obtained on essentially a real-time basis. An emittance mask is also placed over the substrate and a measure of the emittance or spread of the ion beam is obtained.

公开(公告)号：US07748344B2

公开(公告)日：2010-07-06

申请号：US10702368

申请日：2003-11-06

申请人： William F. DiVergilio ,  Victor M. Benveniste ,  Peter L. Kellerman

发明人： William F. DiVergilio ,  Victor M. Benveniste ,  Peter L. Kellerman

IPC分类号： C23C16/452 ,  C23C16/507 ,  C23C16/509 ,  C23C16/517 ,  C23C16/505 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/321

摘要： An ion shower system is disclosed and comprises a plasma source operable to generate source gas ions within a chamber. The plasma source further comprises a plurality of conductor segments and a plurality of capacitors, wherein the conductor segments are serially connected through the plurality of capacitors. The plasma source further comprises an antenna drive circuit coupled to the plurality of conductor segments that provides power to the conductor segments and capacitors at a predetermined frequency. The ion shower system also comprises a source gas inlet that provides a source gas to the chamber. The conductor segments, capacitors and antenna drive circuit cooperatively provide energy to charged particles in the chamber, thereby energizing the charged particles and generating a plasma comprising source gas ions and electrons within the chamber due to ionizing collisions between the energized charged particles and the source gas.

摘要翻译： 公开了一种离子淋浴系统，其包括可操作以在室内产生源气体离子的等离子体源。 等离子体源还包括多个导体段和多个电容器，其中导体段通过多个电容器串联连接。 等离子体源还包括耦合到多个导体段的天线驱动电路，其以预定频率向导体段和电容器提供功率。 离子淋浴系统还包括向腔室提供源气体的源气体入口。 导体段，电容器和天线驱动电路协同地向腔室中的带电粒子提供能量，从而由于通电的带电粒子和源气体之间的电离碰撞，激发带电粒子并产生包含源室气体离子和电子的等离子体 。

公开(公告)号：US20090121122A1

公开(公告)日：2009-05-14

申请号：US11939173

申请日：2007-11-13

申请人： Peter L. Kellerman ,  Kenneth Purser ,  Svetlana Radovanov ,  Victor M. Benveniste ,  Frank Sinclair ,  John Slocum

发明人： Peter L. Kellerman ,  Kenneth Purser ,  Svetlana Radovanov ,  Victor M. Benveniste ,  Frank Sinclair ,  John Slocum

IPC分类号： H01J37/08 ,  G01D18/00

CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/30472 ,  H01J2237/31703

摘要： Techniques for measuring and controlling ion beam angle and density uniformity are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for measuring and controlling ion beam angle and density uniformity. The apparatus may include a measuring assembly having an opening, a cup, and at least one collector at the rear of the cup. The apparatus may further include an actuator to move the measuring assembly along an actuation path to scan an ion beam to measure and control ion beam uniformity.

摘要翻译： 公开了用于测量和控制离子束角度和密度均匀性的技术。 在一个特定的示例性实施例中，技术可以被实现为用于测量和控制离子束角度和密度均匀性的装置。 该装置可以包括具有开口，杯子和在杯后部的至少一个收集器的测量组件。 该装置还可以包括致动器，以沿着致动路径移动测量组件以扫描离子束以测量和控制离子束均匀性。

公开(公告)号：US07267520B2

公开(公告)日：2007-09-11

申请号：US11099022

申请日：2005-04-05

申请人： Peter L. Kellerman ,  Victor M. Benveniste ,  Kourosh Saadatmand ,  Mehran Asdigha ,  Douglas A. Brown

发明人： Peter L. Kellerman ,  Victor M. Benveniste ,  Kourosh Saadatmand ,  Mehran Asdigha ,  Douglas A. Brown

IPC分类号： B66F9/00

CPC分类号： H01L21/67069 ,  H01J2237/20228 ,  H01J2237/31701

摘要： The present invention is directed to a scanning apparatus and method for processing a workpiece, wherein the scanning apparatus comprises a wafer arm and moving arm fixedly coupled to one another, wherein the wafer arm and moving arm are operable to rotate about a first axis. An end effector, whereon the workpiece resides, is coupled to the wafer arm. A rotational shaft couples the wafer arm and moving arm to a first actuator, wherein the first actuator provides a rotational force to the shaft. A momentum balance mechanism is coupled to the shaft and is operable to generally reverse the rotational direction of the shaft. The momentum balance mechanism comprises one or more fixed spring elements operable to provide a force to a moving spring element coupled to the moving arm. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.

摘要翻译： 本发明涉及一种用于处理工件的扫描装置和方法，其中扫描装置包括彼此固定地连接的晶片臂和移动臂，其中晶片臂和移动臂可操作以围绕第一轴线旋转。 工件所在的端部执行器与晶片臂连接。 旋转轴将晶片臂和移动臂联接到第一致动器，其中第一致动器向轴提供旋转力。 动量平衡机构联接到轴上并且可操作地大体上使轴的旋转方向反转。 动量平衡机构包括一个或多个固定弹簧元件，其可操作以向耦合到移动臂的移动弹簧元件提供力。 控制器还可操作以将末端执行器的大致恒定的平移速度保持在预定扫描范围内。

公开(公告)号：US07078707B1

公开(公告)日：2006-07-18

申请号：US11029052

申请日：2005-01-04

申请人： Victor M. Benveniste ,  Peter L. Kellerman ,  William F. DiVergilio

发明人： Victor M. Benveniste ,  Peter L. Kellerman ,  William F. DiVergilio

IPC分类号： G21K5/10 ,  H01J37/08

CPC分类号： H01J37/3171 ,  H01J2237/31703

摘要： Methods are provided for calibrating an ion beam scanner in an ion implantation system, comprising measuring a plurality of initial current density values at a plurality of locations along a scan direction, where the values individually correspond to one of a plurality of initial voltage scan intervals and one of a corresponding plurality of initial scan time values, creating a system of linear equations based on the measured initial current density values and the initial voltage scan intervals, and determining a set of scan time values that correspond to a solution to the system of linear equations that reduces current density profile deviations. A calibration system is provided for calibrating an ion beam scanner in an ion implantation system, comprising a dosimetry system and a control system.

摘要翻译： 提供了用于在离子注入系统中校准离子束扫描器的方法，包括在沿着扫描方向的多个位置处测量多个初始电流密度值，其中所述值分别对应于多个初始电压扫描间隔中的一个，以及 相应的多个初始扫描时间值中的一个，基于测量的初始电流密度值和初始电压扫描间隔创建线性方程组，并且确定与线性系统的解的对应的一组扫描时间值 减小电流密度分布偏差的方程式。 提供校准系统用于在离子注入系统中校准离子束扫描器，包括剂量测定系统和控制系统。

公开(公告)号：US07033443B2

公开(公告)日：2006-04-25

申请号：US10402809

申请日：2003-03-28

申请人： Peter L. Kellerman ,  Victor M. Benveniste ,  Frederick M. Carlson

发明人： Peter L. Kellerman ,  Victor M. Benveniste ,  Frederick M. Carlson

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/68721 ,  C23C16/4586 ,  C23C16/463 ,  H01L21/67109 ,  H01L21/6875 ,  Y10T279/23

摘要： The present invention is directed to a semiconductor thermal processing apparatus and a method for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a gas-cooled clamp and associated method is disclosed which provides cooling of a substrate by thermal conduction generally in the free molecular regime. The gas-cooled clamp comprises a clamping plate having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps are associated with a mean free path of the cooling gas therein. The gas-cooled clamp further comprises a pressure control system operable to control a backside pressure of the cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas, wherein the heat transfer coefficient of the cooling gas is primarily a function of the pressure and substantially independent of the gap distance.

摘要翻译： 本发明涉及半导体热处理装置和半导体基板的热冷却方法。 根据本发明的一个方面，公开了一种气冷夹和相关方法，其通常通过自由分子状态的热传导来提供衬底的冷却。 气冷夹具包括夹板，该夹板具有限定其间的间隙的多个突起，其中间隙的距离或深度与其中的冷却气体的平均自由路径相关联。 气冷夹具还包括压力控制系统，其可操作以控制多个间隙内的冷却气体的背侧压力，从而控制冷却气体的传热系数，其中冷却气体的传热系数主要为 压力的函数和基本上与间隙距离无关。