公开(公告)号：US20050277294A1

公开(公告)日：2005-12-15

申请号：US10865268

申请日：2004-06-10

申请人： James Schaeffer ,  Darrell Roan ,  Dina Triyoso ,  Olubunmi Adetutu

发明人： James Schaeffer ,  Darrell Roan ,  Dina Triyoso ,  Olubunmi Adetutu

IPC分类号： C23C16/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/44

CPC分类号： H01L21/02181 ,  C23C16/0272 ,  H01L21/3141 ,  H01L21/31645

摘要： A method for treating a semiconductor surface to form a metal-containing layer includes providing a semiconductor substrate having an exposed surface. The exposed surface of the semiconductor substrate is treated by forming one or more metals overlying the semiconductor substrate but not completely covering the exposed surface of the semiconductor substrate. The one or more metals enhance nucleation for subsequent material growth. A metal-containing layer is formed on the exposed surface of the semiconductor substrate that has been treated. The treatment of the exposed surface of the semiconductor substrate assists the metal-containing layer to coalesce. In one embodiment, treatment of the exposed surface to enhance nucleation may be performed by spin-coating, atomic layer deposition (ALD), physical layer deposition (PVD), electroplating, or electroless plating. The one or more metals used to treat the exposed surface may include any rare earth or transition metal, such as, for example, hafnium, lanthanum, etc.

摘要翻译： 一种用于处理半导体表面以形成含金属层的方法包括提供具有暴露表面的半导体衬底。 半导体衬底的暴露表面通过形成覆盖半导体衬底但不完全覆盖半导体衬底的暴露表面的一种或多种金属来处理。 一种或多种金属增强成核以用于随后的材料生长。 在已经处理的半导体衬底的暴露表面上形成含金属层。 半导体衬底的暴露表面的处理有助于含金属层的聚结。 在一个实施方案中，可以通过旋涂，原子层沉积（ALD），物理层沉积（PVD），电镀或无电镀来进行暴露表面的处理以增强成核。 用于处理暴露表面的一种或多种金属可以包括任何稀土或过渡金属，例如铪，镧等。

公开(公告)号：US20070166970A1

公开(公告)日：2007-07-19

申请号：US11331763

申请日：2006-01-13

申请人： Dina Triyoso ,  Olubunmi Adetutu ,  James Schaeffer

发明人： Dina Triyoso ,  Olubunmi Adetutu ,  James Schaeffer

IPC分类号： H01L21/3205

CPC分类号： H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659

摘要： A semiconductor process and apparatus fabricate a metal gate electrode by forming a first conductive layer (22) over a gate dielectric layer (11), forming a transition layer (32) over the first conductive layer using an atomic layer deposition process in which an amorphizing material is increasingly added as the transition layer is formed, forming a capping conductive layer (44) over the transition layer, and then selectively etching the capping conductive layer, transition layer, and first conductive layer, resulting in the formation of an etched gate stack (52). By forming the transition layer (32) with an atomic layer deposition process in which the amorphizing material (such as silicon, carbon, or nitrogen) is increasingly added, the transition layer (32) is constructed having a lower region (e.g., 31, 33) with a polycrystalline structure and an upper region (e.g., 37, 39) with an amorphous structure that blocks silicon diffusion.

公开(公告)号：US20050277296A1

公开(公告)日：2005-12-15

申请号：US10865452

申请日：2004-06-10

申请人： Olubunmi Adetutu ,  James Schaeffer ,  Dina Triyoso

发明人： Olubunmi Adetutu ,  James Schaeffer ,  Dina Triyoso

IPC分类号： C23C14/00 ,  C23C16/44 ,  C23C16/56 ,  H01L21/314 ,  H01L21/316 ,  H01L21/44

CPC分类号： C23C14/0005 ,  C23C16/4401 ,  C23C16/56 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31645

摘要： A metal-containing semiconductor layer having a high dielectric constant is formed with a method that avoids inclusion of contaminant elements that reduce dielectric constant of metals. The metal-containing semiconductor layer is formed overlying a substrate in a chamber. A precursor is introduced to deposit at least a portion of the metal-containing semiconductor layer. The precursor contains one or more elements that, if allowed to deposit in the metal-containing layer, would become impurity elements. A reactant gas is used to purify the metal-containing layer by removing impurity elements from the metal-containing layer which were introduced into the chamber by the precursor.

摘要翻译： 通过避免包含降低金属介电常数的污染元素的方法，形成具有高介电常数的含金属的半导体层。 含金属的半导体层形成在室内的基板上。 引入前体以沉积至少一部分含金属的半导体层。 前体含有一种或多种元素，如果允许沉积在含金属的层中，则会成为杂质元素。 反应气体用于通过从由前体引入室中的含金属层去除杂质元素来净化含金属层。

公开(公告)号：US20060166424A1

公开(公告)日：2006-07-27

申请号：US11043337

申请日：2005-01-26

申请人： James Schaeffer ,  Olubunmi Adetutu

发明人： James Schaeffer ,  Olubunmi Adetutu

IPC分类号： H01L21/8238

CPC分类号： H01L21/823864 ,  H01L21/823835 ,  H01L21/823842

摘要： A method for forming a semiconductor device (100) includes a semiconductor substrate (102) having a first region (104), forming a gate dielectric (108) over the first region, forming a conductive metal oxide (110) over the gate dielectric, forming an oxidation resistant barrier layer (111) over the conductive metal oxide, and forming a capping layer over the oxidation resistant barrier layer. In one embodiment, the conductive metal oxide is IrO2, MoO2, and RuO2, and the oxidation resistant barrier layer includes TiN.

摘要翻译： 一种用于形成半导体器件（100）的方法包括具有第一区域（104）的半导体衬底（102），在第一区域上形成栅极电介质（108），在栅极电介质上形成导电金属氧化物（110） 在所述导电金属氧化物上形成抗氧化阻挡层（111），并在所述抗氧化阻挡层上形成覆盖层。 在一个实施方案中，导电金属氧化物是IrO 2，MoO 2和RuO 2，并且抗氧化阻挡层包括TiN。

公开(公告)号：US20070096226A1

公开(公告)日：2007-05-03

申请号：US11264069

申请日：2005-10-31

申请人： Chun-Li Liu ,  Tushar Merchant ,  Marius Orlowski ,  James Schaeffer ,  Matthew Stoker

发明人： Chun-Li Liu ,  Tushar Merchant ,  Marius Orlowski ,  James Schaeffer ,  Matthew Stoker

IPC分类号： H01L29/94 ,  H01L29/76 ,  H01L31/00

CPC分类号： H01L29/513 ,  H01L21/28194 ,  H01L21/28211 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66575

摘要： A semiconductor device includes a substrate, a multilayered assembly of high k dielectric materials formed on the substrate, and a first conducting material formed on the upper layer of the assembly of high k dielectric materials. The multilayered high k dielectric assembly includes a lower layer, an upper layer, and a diffusion barrier layer formed between the lower and upper dielectric layers. The diffusion barrier layer has a greater affinity for oxygen than the upper and lower layers. The first conducting layer includes a conducting compound of at least a metal element and oxygen.

摘要翻译： 半导体器件包括衬底，形成在衬底上的高k电介质材料的多层组件和形成在高k电介质材料的组件的上层上的第一导电材料。 多层高k电介质组件包括下层，上层和形成在下介电层和上电介质层之间的扩散阻挡层。 扩散阻挡层与上层和下层具有比氧更大的亲和性。 第一导电层包括至少金属元素和氧的导电化合物。

公开(公告)号：US20060210771A1

公开(公告)日：2006-09-21

申请号：US11439573

申请日：2006-05-23

申请人： James Schaeffer

发明人： James Schaeffer

IPC分类号： B32B3/00

CPC分类号： C11D17/049 ,  B08B1/00 ,  C11D17/041 ,  Y10T428/24479 ,  Y10T442/60

摘要： The present invention is directed to a nonwoven fabric, and specifically to an engineered nonwoven fabric imparted with a discontinuous, irregular, three-dimensional pattern, which results in a sufficiently resilient material that exhibits a uniform multi-directional cleaning performance imminently suitable for numerous applications including the treatment, cleaning and/or cleansing of surfaces.

摘要翻译： 本发明涉及一种非织造织物，特别涉及赋予不连续的，不规则的三维图案的工程非织造织物，其导致足够弹性的材料，其呈现出立即适合于许多应用的均匀的多方向清洁性能 包括表面的处理，清洁和/或清洁。

公开(公告)号：US20050095763A1

公开(公告)日：2005-05-05

申请号：US10696346

申请日：2003-10-29

申请人： Srikanth Samavedam ,  James Schaeffer ,  Philip Tobin ,  Bikas Maiti ,  Joseph Mogab

发明人： Srikanth Samavedam ,  James Schaeffer ,  Philip Tobin ,  Bikas Maiti ,  Joseph Mogab

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/4763 ,  H01L21/8234

CPC分类号： H01L29/495 ,  H01L21/28079 ,  H01L21/823842 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

摘要： In one embodiment, metal boride (MBx), metal carbide (MCx), metal carbo-nitrides (MCxNy), metal boro-carbide (MBxCy), metal boro-nitride (MBxNy) or metal boro-carbo-nitride (MBxCyNz), wherein the metal is a transition metal (Group III-XII of the periodic chart) may be suitable as NMOS gate electrode materials. Such materials, such as TaC and LaB6, can be formed to have work functions that are within approximately 4-4.3 eV, which is desirable for NMOS transistors. In addition, the amount of carbon or nitrogen can be adjusting the amount of carbon or nitrogen in the precursor to achieve a predetermined metal work function.

摘要翻译： 在一个实施方案中，金属硼化物（MB xS x），金属碳化物（MC xS），金属碳氮化物（MC x N x N） 金属硼化物（MB x x C y），金属硼氮化物（MB x N x N） 或金属硼 - 碳氮化物（金属氧化物），其中金属是过渡金属 （周期图的III-XII族）可以适合作为NMOS栅电极材料。 这种材料，例如TaC和LaB 6，可以形成为具有大约4-4.3eV的功函数，这对NMOS晶体管是期望的。 此外，碳或氮的量可以调节前体中的碳或氮的量以实现预定的金属功能。

公开(公告)号：US20050003035A1

公开(公告)日：2005-01-06

申请号：US10819698

申请日：2004-04-07

申请人： Jerry Zucker ,  James Schaeffer ,  Richard Ferencz ,  James Snyder ,  Tim Krause ,  Nick Carter

发明人： Jerry Zucker ,  James Schaeffer ,  Richard Ferencz ,  James Snyder ,  Tim Krause ,  Nick Carter

IPC分类号： B29C47/04 ,  B29C47/06 ,  B29C47/10 ,  B29C47/12 ,  B29C47/16 ,  B29C47/30 ,  D01D4/02 ,  D01D13/00

CPC分类号： D01D4/02 ,  B29C48/05 ,  B29C48/08 ,  B29C48/16 ,  B29C48/18 ,  B29C48/285 ,  B29C48/30 ,  B29C48/304 ,  B29C48/31 ,  B29C48/345 ,  B29K2067/00 ,  B29K2077/00 ,  B29K2105/12 ,  B29K2311/10

摘要： The present invention is directed to a modular die unit comprising a plurality of individually shaped plates wherein the shaped plates are stacked in face to face juxtaposition, and when placed into such a juxtaposition exhibit useful polymer forming attributes heretofore unattainable by prior art practices. Single die plates are formed such that the plates exhibit a finite geometric relationship, which in turn provides resistance to flexural deformation of the individually shaped die plates and conversely, improved resistance to variability of the modular die unit and enhanced and predictable formation characteristics of the polymer material formed therewith. Each of said single die plates within the stack forming the modular die unit exhibit an x-direction, a y-direction, and a z-direction, wherein any one of said single die plates exhibit in said x-direction and y-direction to have at least a 50% planar continuity of the total planar continuity.

摘要翻译： 本发明涉及一种模块化模具单元，其包括多个单独成形的板，其中成形板以并列方式堆叠，并且当放置成这样并列时，显示出迄今为止由现有技术实践不可达到的有用的聚合物形成属性。 形成单模板，使得板呈现有限的几何关系，其又提供抵抗单独成型的模板的弯曲变形的阻力，反之，提高了模块化模具单元的变异性，并且增强了且可预测的聚合物的形成特性 形成的材料。 形成模块化单元的堆叠内的每个所述单模板呈现x方向，y方向和z方向，其中所述单模板中的任何一个在所述x方向和y方向上表现为 具有总平面连续性的至少50％的平面连续性。

公开(公告)号：US20080274147A1

公开(公告)日：2008-11-06

申请号：US11911922

申请日：2006-04-20

申请人： James Schaeffer ,  Cliff Bridges

发明人： James Schaeffer ,  Cliff Bridges

IPC分类号： A61K8/02 ,  A61Q19/00

CPC分类号： C11D17/049 ,  A47K7/03 ,  A47L13/17 ,  A61K8/0208 ,  A61L2/16 ,  A61Q19/10

摘要： The present invention is directed to a dry cleansing cloth that comprises at least one personal care composition imparted to the cloth, wherein the composition acts as a visual indicator of the compositions depletion with each use, eventually signaling the consumer for the need of a replacement cloth. Accordingly, the cloth of the present invention may be any suitable limited use substrate, including wovens, nonwovens, films, and combinations thereof. Preferably, the limited use cloth comprises a nonwoven substrate, wherein the nonwoven substrates may include, but are not limited to airlaid fabrics, wetlaid fabrics, spunlace fabrics, spunbond fabrics, meltblown fabrics, coform fabrics, entangled spunbond fabrics, and combinations thereof.

摘要翻译： 本发明涉及一种干洗清洁布，其包含赋予布的至少一种个人护理组合物，其中所述组合物用作各种用途的组合物消耗的视觉指示剂，最终发信号通知消费者需要替换布 。 因此，本发明的布可以是任何合适的有限使用的基底，包括织物，无纺布，薄膜及其组合。 优选地，有限使用的布包括非织造基底，其中非织造基底可以包括但不限于气流成网织物，湿法成网织物，水刺织物，纺粘织物，熔喷织物，共面织物，缠结纺粘织物及其组合。

公开(公告)号：US07142779B2

公开(公告)日：2006-11-28

申请号：US10792203

申请日：2004-03-03

申请人： Bernarr C. Schaeffer ,  James Schaeffer ,  Wayne Schaeffer

发明人： Bernarr C. Schaeffer ,  James Schaeffer ,  Wayne Schaeffer

IPC分类号： A21B2/00

CPC分类号： A61N5/06 ,  A61H33/06 ,  A61H2033/068 ,  A61H2035/004 ,  A61H2201/0161 ,  A61H2201/10

摘要： A portable compact sauna wherein a user's body is warmed to sweating primarily by direct absorption of infrared radiation. Broad infrared radiation emitters or sources are placed around the inside of a narrow cabinet so as to be in close proximity to various parts of a seated user. Fins spaced apart less than finger-width on the emitters protect the user from contact with elevated temperatures in the emitters. The emitters, which lend themselves to easy cleaning, are heated by electric infrared heaters having a unique design which eliminates extremely-low-frequency (ELF) electromagnetic field (EMF) normally generated by AC energized electrical heater elements, to provide low extremely-low frequency EMF saunas able to utilize conventional-commercial electrical-energy sources. The emitters protect the heaters. Power wires for the heaters are arranged for low ELF EMF emission, too.

摘要翻译： 一种便携式小型桑拿浴，其中主要通过直接吸收红外辐射使使用者的身体变暖出汗。 广泛的红外辐射发射器或源放置在窄柜体的内部，以便靠近就座用户的各个部分。 在发射器上间隔小于手指宽度的金属丝保护使用者免受发射器中升高的温度接触。 借助于具有独特设计的电动红外线加热器，能够消除通常由交流供电电加热器元件产生的极低频（ELF）电磁场（EMF），从而提供低极低 频率EMF桑拿浴能够利用传统的商业电能源。 发射器保护加热器。 用于加热器的电源线也用于低ELF EMF发射。