公开(公告)号：US20240282889A1

公开(公告)日：2024-08-22

申请号：US18647501

申请日：2024-04-26

Applicant: Japan Display Inc. ,  TOSOH CORPORATION

Inventor： Masumi NISHIMURA ,  Masashi TSUBUKU ,  Yoshihiro UEOKA ,  Yuya SUEMOTO ,  Masami MESUDA

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/12 ,  H01L33/16

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16

Abstract: A stacked structure includes an amorphous substrate, a buffer layer on the amorphous substrate, and a gallium nitride-based semiconductor layer on the buffer layer. The gallium nitride-based semiconductor layer includes at least one gallium nitride layer, and an oxygen concentration of the gallium nitride layer is less than 1×1021/cm3.

公开(公告)号：US20240158954A1

公开(公告)日：2024-05-16

申请号：US17772972

申请日：2020-10-27

Applicant: TOSOH CORPORATION ,  National Institute for Materials Science

Inventor： Yuya TSUCHIDA ,  Yuya SUEMOTO ,  Yoshihiro UEOKA ,  Masami MESUDA ,  Hideto KURAMOCHI ,  Takahiro NAGATA ,  Liwen SANG ,  Toyohiro CHIKYOW

IPC: C30B29/68 ,  C23C14/00 ,  C23C14/02 ,  C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  C30B23/02 ,  C30B25/06 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L33/32 ,  H01S5/02

CPC classification number: C30B29/68 ,  C23C14/0036 ,  C23C14/021 ,  C23C14/0617 ,  C23C14/3407 ,  C23C14/35 ,  C30B23/025 ,  C30B25/06 ,  C30B25/186 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/32 ,  H01S5/021

Abstract: The present invention provides: a multilayer film structure which has high crystallinity and planarity; and a method for producing this multilayer film structure. This multilayer film structure is provided with: an Si (111) substrate; a first thin film that is arranged on the Si (111) substrate, while being formed of a nitride material and/or aluminum; and a second thin film that is arranged on the first thin film, while being formed of a nitride material. An amorphous layer having a thickness of 0 nm or more but less than 1.0 nm are present on the Si (111) substrate; and the full width at half maximum (FWHM) of a rocking curve of the (0002) plane at the surface of this multilayer film structure is 1.50° or less.

公开(公告)号：US20230143194A1

公开(公告)日：2023-05-11

申请号：US17907674

申请日：2021-03-29

Applicant: TOSOH CORPORATION

Inventor： Yuya SUEMOTO ,  Yoshihiro UEOKA ,  Masami MESUDA

IPC: H01L21/02 ,  C23C14/54 ,  C23C14/06 ,  C23C14/34

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02378 ,  H01L21/02631 ,  H01L21/02458 ,  C23C14/54 ,  C23C14/0617 ,  C23C14/3407

Abstract: Provided are a crack-free laminated film and a structure including this laminated film. This laminated film includes: a buffer layer; and at least one layer of gallium nitride base film disposed on the buffer layer. Moreover, the compression stress of the entire laminated film is −2.0 to 5.0 GPa.

公开(公告)号：US20240401184A1

公开(公告)日：2024-12-05

申请号：US18698360

申请日：2022-10-06

Applicant: TOSOH CORPORATION ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yuya SUEMOTO ,  Yoshihiro UEOKA ,  Masami MESUDA ,  Takahiro NAGATA ,  Liwen SANG ,  Toyohiro CHIKYOW

IPC: C23C14/06 ,  C23C14/34 ,  C23C14/58 ,  H01L21/02 ,  H01L29/20 ,  H01L29/207

Abstract: A laminate includes a structure in which a Si (111) substrate, an oxygen-containing aluminum nitride film, and a gallium nitride film are laminated. The laminate is obtained by a production method for a laminate that is characterized by having a structure in which a Si (111) substrate, an oxygen-containing aluminum nitride film, and a gallium nitride film are laminated, the production method having: an AlN film-formation step in which an aluminum nitride film is formed on the Si (111) substrate and an Si substrate including an aluminum nitride film is obtained; an oxidation step in which the Si substrate including the aluminum nitride film is treated in an oxidizing atmosphere and a Si substrate including an oxygen-containing aluminum nitride film is obtained; and a GaN film-formation step in which a gallium nitride film is formed on the Si substrate including the oxygen-containing aluminum nitride film.

公开(公告)号：US20240194829A1

公开(公告)日：2024-06-13

申请号：US18553843

申请日：2022-04-01

Applicant: TOSOH CORPORATION

Inventor： Yoshihiro UEOKA ,  Yuya SUEMOTO ,  Masami MESUDA

IPC: H01L33/32 ,  H01L33/00 ,  H01L33/16

CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/16

Abstract: A multilayer film structure includes a SiC substrate and a film disposed on the SiC substrate and containing a nitride-based material at least containing Ga, wherein the multilayer film structure has an off-angle of 0.03° or more and 8° or less with respect to a Silicon face of a (0001) plane of a SiC single crystal forming the SiC substrate and the film containing the nitride-based material has a C content of 2×1019 atoms/cm3 or less and a Cl content of 2×1018 atoms/cm3 or less.