公开(公告)号：US6011443A

公开(公告)日：2000-01-04

申请号：US116646

申请日：1998-07-16

Applicant: Jason Chen ,  Ping Xu

Inventor： Jason Chen ,  Ping Xu

IPC: H03B5/20 ,  H03K3/03 ,  H03K3/354 ,  H03B5/24

CPC classification number: H03K3/03 ,  H03K3/354

Abstract: A CMOS voltage controlled oscillator (VCO) having an improved voltage-to-current converter and an active MOS load operating in the triode region to provide improved performance characteristics including a small differential logic swing and a high frequency output. The voltage-to-current converter of the CMOS VCO comprises a pair of MOS transistors, one of which has an aspect ratio (W.sub.P /L.sub.P) and the other of which has an aspect ratio (W.sub.P /L.sub.P)/n, wherein 1

Abstract translation: 具有改进的电压 - 电流转换器和在三极管区域中工作的有源MOS负载的CMOS压控振荡器（VCO），以提供改进的性能特性，包括小的差分逻辑摆幅和高频输出。 CMOS VCO的电压 - 电流转换器包括一对MOS晶体管，其中一个具有纵横比（WP / LP），另一个具有纵横比（WP / LP）/ n，其中1 < n <4。 该配置使得电压 - 电流转换器中的第三MOS晶体管仅在三极管区域中工作。 CMOS VCO还包括具有以环形配置连接的多个延迟级的ICO部分。 每个延迟级包括一对输入MOS晶体管和一对负载MOS晶体管。 根据本发明，电压 - 电流转换器使每个负载MOS晶体管在三极管区域中工作。

公开(公告)号：US09322049B2

公开(公告)日：2016-04-26

申请号：US13516198

申请日：2010-12-14

Applicant: Anthony Sauve ,  Ping Xu

Inventor： Anthony Sauve ,  Ping Xu

IPC: A61K31/70 ,  A61K31/185 ,  C12Q1/48

CPC classification number: C12Q1/48 ,  G01N2333/91142 ,  G01N2500/04

Abstract: The invention provides a method of increasing a deacetylated activity of SIRT6 by contacting SIRT6 with an agent that binds SIRT6 and reduces the Km of SIRT6 for a substrate, thereby increasing the deacetylase activity of SIRT6. The invention also provides compounds of the formulas (II) and (III).

Abstract translation: 本发明提供了通过使SIRT6与结合SIRT6的试剂接触并降低底物的SIRT6的Km，从而增加SIRT6的脱乙酰酶活性而提高SIRT6脱乙酰化活性的方法。 本发明还提供式（II）和（III）的化合物。

公开(公告)号：US08658707B2

公开(公告)日：2014-02-25

申请号：US12886817

申请日：2010-09-21

Applicant: Ping Xu ,  Jack J. Hegenbarth ,  Rachel Radspinner ,  Paul D. Drumheller ,  William B. Johnson ,  Wen K. Liu ,  Xin Kang Chen

Inventor： Ping Xu ,  Jack J. Hegenbarth ,  Rachel Radspinner ,  Paul D. Drumheller ,  William B. Johnson ,  Wen K. Liu ,  Xin Kang Chen

IPC: C08J9/16 ,  C08F214/26 ,  C08F228/02 ,  C08F220/50 ,  C08F220/28

CPC classification number: A61L31/041 ,  A61L31/048 ,  A61L31/16 ,  B01D67/0093 ,  B01D71/32 ,  B01J39/18 ,  B29C55/005 ,  B29K2027/18 ,  B29K2105/04 ,  B29K2995/0092 ,  C08F14/26 ,  C08F214/26 ,  C08F214/262 ,  C08F214/265 ,  C08F220/28 ,  C08F220/50 ,  C08F228/02 ,  C08J5/2237 ,  C08J9/28 ,  C08J9/35 ,  C08J2201/0502 ,  C08J2327/18 ,  C08L27/18 ,  C08L2205/02 ,  Y10T428/31544 ,  C08L2666/04 ,  C08F2/22

Abstract: A functional TFE copolymer fine powder is described, wherein the TFE copolymer is a polymer of TFE and at least one functional comonomer, and wherein the TFE copolymer has functional groups that are pendant to the polymer chain. The functional TFE copolymer fine powder resin is paste extrudable and expandable. Methods for making the functional TFE copolymer are also described. The expanded functional TFE copolymer material may be post-reacted after expansion.

Abstract translation: 描述了一种功能性TFE共聚物细粉末，其中TFE共聚物是TFE和至少一种官能共聚单体的聚合物，并且其中TFE共聚物具有垂直于聚合物链的官能团。 功能性TFE共聚物细粉末树脂是可挤出和可膨胀的糊状物。 还描述了制备功能性TFE共聚物的方法。 膨胀的功能性TFE共聚物材料可以在膨胀后进行后反应。

公开(公告)号：US08623963B2

公开(公告)日：2014-01-07

申请号：US12353514

申请日：2009-01-14

Applicant: Ping Xu ,  Jack Hegenbarth

Inventor： Ping Xu ,  Jack Hegenbarth

IPC: C08F8/00 ,  C08J3/05

CPC classification number: C08L29/10 ,  C08K3/36 ,  C08L27/12 ,  C08L27/18 ,  C08L33/22 ,  C08L2205/02 ,  C08L2666/04

Abstract: High purity perfluoroelastomer composites and processes for producing the same are provided. High purity composites may be formed from compositions comprising a crosslinkable fluoroelastomer terpolymer of TFE, PAVE, and CNVE, and functionalized PTFE, which may be crosslinked to form crosslinked composites having low metal content and low compression set. Emulsion mixtures for forming the high purity composites are also provided.

Abstract translation: 提供了高纯度全氟弹性体复合材料及其制备方法。 高纯度复合材料可以由包含TFE，PAVE和CNVE的交联性含氟弹性体三元共聚物和官能化PTFE的组合物形成，其可以交联以形成具有低金属含量和低压缩永久变形的交联复合材料。 还提供了用于形成高纯度复合材料的乳液混合物。

公开(公告)号：USD662469S1

公开(公告)日：2012-06-26

申请号：US29404385

申请日：2011-10-20

Applicant: Mitch Mulder ,  Ping Xu

Designer： Mitch Mulder ,  Ping Xu

公开(公告)号：US20080070421A1

公开(公告)日：2008-03-20

申请号：US11533505

申请日：2006-09-20

Applicant: Ping Xu ,  Christopher Dennis Bencher

Inventor： Ping Xu ,  Christopher Dennis Bencher

IPC: H01L21/469

CPC classification number: H01L21/76829 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76835

Abstract: A method is provided for processing a substrate surface by delivering a first gas mixture comprising a first organosilicon compound, a first oxidizing gas, and one or more hydrocarbon compounds into a chamber at deposition conditions sufficient to deposit a first low dielectric constant film on the substrate surface. A second gas mixture having a second organosilicon compound and a second oxidizing gas is delivered into the chamber at deposition conditions sufficient to deposit a second low dielectric constant film on the first low dielectric constant film. The flow rate of the second oxidizing gas into the chamber is increased, and the flow rate of the second organosilicon compound into the chamber is decreased to deposit an oxide rich cap on the second low dielectric constant film.

Abstract translation: 提供了一种通过将包含第一有机硅化合物，第一氧化气体和一种或多种烃化合物的第一气体混合物输送到室中的方法来处理衬底表面，该沉积条件足以在衬底上沉积第一低介电常数膜 表面。 具有第二有机硅化合物和第二氧化气体的第二气体混合物在足以在第一低介电常数膜上沉积第二低介电常数膜的沉积条件下被输送到室中。 进入室内的第二氧化气体的流量增加，第二有机硅化合物进入室的流量减少，从而在第二低介电常数膜上沉积氧化物富集盖。

公开(公告)号：US20070042610A1

公开(公告)日：2007-02-22

申请号：US11537928

申请日：2006-10-02

Applicant: Li-Qun Xia ,  Ping Xu ,  Louis Yang

Inventor： Li-Qun Xia ,  Ping Xu ,  Louis Yang

IPC: H01L21/31

CPC classification number: H01L21/76835 ,  C23C16/325 ,  H01L21/0206 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Abstract translation: 提供了一种处理基材的方法，包括提供包含含有苯基的有机硅化合物的处理气体至处理室，并使处理气体反应沉积在大马士革或双镶嵌中可用作阻挡层的低k碳化硅阻挡层 低k电介质材料的应用。

公开(公告)号：US07125813B2

公开(公告)日：2006-10-24

申请号：US10828441

申请日：2004-04-20

Applicant: Li-Qun Xia ,  Ping Xu ,  Louis Yang

Inventor： Li-Qun Xia ,  Ping Xu ,  Louis Yang

IPC: H01L21/31

CPC classification number: H01L21/76835 ,  C23C16/325 ,  H01L21/0206 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/314 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

Abstract: A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

Abstract translation: 提供了一种处理基材的方法，包括提供包含含有苯基的有机硅化合物的处理气体至处理室，并使处理气体反应沉积在大马士革或双镶嵌中可用作阻挡层的低k碳化硅阻挡层 低k电介质材料的应用。

公开(公告)号：US06890850B2

公开(公告)日：2005-05-10

申请号：US10196498

申请日：2002-07-15

Applicant: Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

Inventor： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

IPC: C23C16/42 ,  C23C16/30 ,  C23C16/40 ,  C23C16/56 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

Abstract: Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

Abstract translation: 提供了用于沉积氧掺杂介电层的方法。 氧掺杂介电层可用于阻挡层或硬掩模。 在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理 并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。 氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

公开(公告)号：US06868856B2

公开(公告)日：2005-03-22

申请号：US09905515

申请日：2001-07-13

Applicant: Thomas Nowak ,  Ian Latchford ,  Tsutomu Tanaka ,  Bok Heon Kim ,  Ping Xu ,  Jason Foster ,  Heath B. DeShong ,  Martin Seamons

Inventor： Thomas Nowak ,  Ian Latchford ,  Tsutomu Tanaka ,  Bok Heon Kim ,  Ping Xu ,  Jason Foster ,  Heath B. DeShong ,  Martin Seamons

IPC: B08B7/00 ,  C23C16/44 ,  C23C16/52 ,  H01J37/32 ,  B08B6/00 ,  H01L21/306

CPC classification number: H01J37/32862 ,  B08B7/00 ,  C23C16/4405 ,  C23C16/52 ,  Y10S134/902

Abstract: Methods and apparatus for cleaning semiconductor processing equipment. The apparatus include both local and remote gas dissociators coupled to a semiconductor processing chamber to be cleaned. The methods include introducing a precursor gas into the remote dissociator where the gas is dissociated and introducing a portion of the dissociated gas into the chamber. Another portion of the dissociated gas which re-associates before introduction into the chamber is also introduced into the chamber where it is again dissociated. The dissociated gas combines with contaminants in the chamber and is exhausted from the chamber along with the contaminants.

Abstract translation: 半导体加工设备清洗方法及装置。 该装置包括耦合到待清洁的半导体处理室的局部和远程气体离解器。 所述方法包括将前体气体引入到远离解离器中，其中气体被解离并将一部分解离的气体引入室中。 在引入室之前重新结合的解离气体的另一部分也被引入室中，在那里再次解离。 解离的气体与室内的污染物结合，并与污染物一起从室中排出。