High Efficiency Group III Nitride LED with Lenticular Surface
    4.
    发明申请
    High Efficiency Group III Nitride LED with Lenticular Surface 有权
    高效率III组氮化物LED与眼表面

    公开(公告)号:US20090166659A1

    公开(公告)日:2009-07-02

    申请号:US12401832

    申请日:2009-03-11

    IPC分类号: H01L33/00

    摘要: A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode.

    摘要翻译: 公开了一种发光二极管,其具有在二极管的顶表面的部分上的欧姆接触的垂直取向和与二极管的发光区相邻的镜层。 二极管包括通过二极管的顶部欧姆接触的几何投影下方的镜面层中的开口,其限定了二极管的反射镜层和发光区域之间的非接触区域,以促进电流流过而不是在 非接触区域又减少欧姆接触下方的发光复合数,并增加二极管透明部分中发光复合的数量。

    Flip-chip bonding of light emitting devices
    5.
    发明授权
    Flip-chip bonding of light emitting devices 有权
    发光器件的倒装键合

    公开(公告)号:US07259033B2

    公开(公告)日:2007-08-21

    申请号:US10920101

    申请日:2004-08-17

    IPC分类号: H01L21/00 H01L21/50

    摘要: Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

    摘要翻译: 通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料,并将其安装在基板上,并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上, 发光器件死到底座。 选择导电芯片附着材料的预定图案,以便当发光器件裸片安装到底座时,防止导电芯片附着材料接触具有相反导电类型的区域。 导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。 还提供具有预定图案的导电芯片附着材料的发光器件裸片。 在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中 级环氧树脂。 还提供了具有B级可固化模具环氧树脂的发光器件模具。

    Light emitting devices suitable for flip-chip bonding
    8.
    发明授权
    Light emitting devices suitable for flip-chip bonding 有权
    适用于倒装芯片贴装的发光器件

    公开(公告)号:US07608860B2

    公开(公告)日:2009-10-27

    申请号:US11772419

    申请日:2007-07-02

    IPC分类号: H01L29/267

    摘要: Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

    摘要翻译: 通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料,并将其安装在基板上,并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上, 发光器件死到底座。 选择导电芯片附着材料的预定图案,以便当发光器件裸片安装到底座时,防止导电芯片附着材料接触具有相反导电类型的区域。 导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。 还提供具有预定图案的导电芯片附着材料的发光器件裸片。 在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中 级环氧树脂。 还提供了具有B级可固化模具环氧树脂的发光器件模具。

    LIGHT EMITTING DEVICES SUITABLE FOR FLIP-CHIP BONDING
    9.
    发明申请
    LIGHT EMITTING DEVICES SUITABLE FOR FLIP-CHIP BONDING 有权
    适用于片芯接合的发光装置

    公开(公告)号:US20070241360A1

    公开(公告)日:2007-10-18

    申请号:US11772419

    申请日:2007-07-02

    IPC分类号: H01L33/00

    摘要: Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.

    摘要翻译: 通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料,并将其安装在基板上,并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上, 发光器件死到底座。 选择导电芯片附着材料的预定图案,以便当发光器件裸片安装到底座时,防止导电芯片附着材料接触具有相反导电类型的区域。 导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。 还提供具有预定图案的导电芯片附着材料的发光器件裸片。 在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中 级环氧树脂。 还提供了具有B级可固化模具环氧树脂的发光器件模具。

    High efficiency group III nitride-silicon carbide light emitting diode
    10.
    发明授权
    High efficiency group III nitride-silicon carbide light emitting diode 有权
    高效率III族氮化硅 - 碳化硅发光二极管

    公开(公告)号:US07259402B2

    公开(公告)日:2007-08-21

    申请号:US10951042

    申请日:2004-09-22

    IPC分类号: H01L31/02

    CPC分类号: H01L33/36 H01L33/007

    摘要: A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.

    摘要翻译: 公开了一种制造适用于包装的高效率高抽提发光二极管的方法和结果。 该方法包括以下步骤:将宽带隙半导体材料的发光有源部分添加到导电碳化硅基板,将添加的有源部分接合到导电子安装结构,并且将与添加的相邻的碳化硅基板相对的一部分 从而减小接合的基板,有源部分和副安装结构的整体厚度。 所得到的子安装结构可以连接到引线框架,其中有源部分位于碳化硅基板和子安装结构之间,从而使用子安装结构将有源部分与引线框架分开,并避免不必要的 有源部分和引线框架之间的电接触。