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51 条记录 (耗时 0.03 秒)

    Process for the selective hydrogenation of compounds comprising endo and exocyclic unsaturations
    3.
    发明授权
    Process for the selective hydrogenation of compounds comprising endo and exocyclic unsaturations 失效
    用于选择性氢化包含内环和外环不饱和化合物的方法

    公开(公告)号：US5475174A

    公开(公告)日：1995-12-12

    申请号：US156777

    申请日：1993-11-24

    申请人： Christine Lucas ,  Jean-Pierre Candy ,  Jean-Marie Basset ,  Blaise Didillon ,  Jean-Paul Boitiaux

    发明人： Christine Lucas ,  Jean-Pierre Candy ,  Jean-Marie Basset ,  Blaise Didillon ,  Jean-Paul Boitiaux

    IPC分类号： B01J23/62 ,  C07B61/00 ,  C07C5/03 ,  C07C5/05 ,  C07C13/19

    CPC分类号： C07C5/05 ,  B01J23/622 ,  C07C2101/14 ,  C07C2523/14 ,  C07C2523/42 ,  C07C2523/44 ,  C07C2523/46 ,  C07C2523/62 ,  C07C2523/755 ,  C07C2523/835

    摘要： The invention concerns a process for the selective hydrogenation of polyunsaturated cyclic compounds comprising at least one endocyclic carbon-carbon double bond and at least one terminal exocyclic carbon-carbon double bond, said double bonds not being conjugated, to form a mixture essentially containing the saturated ring compound and comprising at least one terminal exocyclic double bond, the process being carried out in the presence of hydrogen under a pressure of from 1 to 10 MPa and at a temperature of from 0.degree. to 200.degree. C., and in the presence of a catalyst including a support and (a) from 0.1 to 5% by weight of at least one metal from group VIII (iridium, osmium, nickel, palladium, platinum and rhodium) and (b) from 0.01 to 15% by weight of at least one metal from group IVa (tin, germanium and lead), the molar ratio between metals of group VIII and group IVa being between 0.3 and 3. The process is used for the hydrogenation of 4-vinylcylcohexene to vinylcyclohexane.

    摘要翻译： 本发明涉及包含至少一个内环碳 - 碳双键和至少一个末端环外碳 - 碳双键的多不饱和环状化合物的选择性氢化的方法，所述双键不是共轭的，以形成基本上含有饱和的 环化合物并且包含至少一个末端环外双键，该方法在氢气存在下，在1至10MPa的压力和0至200℃的温度下进行，并且在 包含载体的催化剂和（a）0.1至5重量％的至少一种第VIII族金属（铱，锇，镍，钯，铂和铑）和（b）0.01至15重量％ 来自IVa族（锡，锗和铅）的至少一种金属，VIII族和IVa族金属之间的摩尔比在0.3和3之间。该方法用于将4-乙烯基环己烯氢化成乙烯基环己烷。

    Method for producing a conductive nanoparticle memory device
    9.
    发明授权
    Method for producing a conductive nanoparticle memory device 失效
    导电纳米颗粒存储装置的制造方法

    公开(公告)号：US08389368B2

    公开(公告)日：2013-03-05

    申请号：US12727593

    申请日：2010-03-19

    申请人： Simon Deleonibus ,  Jean-Marie Basset ,  Paul Campbell ,  Thibaut Gutel ,  Paul-Henri Haumesser ,  Gilles Marchand ,  Catherine Santini

    发明人： Simon Deleonibus ,  Jean-Marie Basset ,  Paul Campbell ,  Thibaut Gutel ,  Paul-Henri Haumesser ,  Gilles Marchand ,  Catherine Santini

    IPC分类号： H01L21/336

    CPC分类号： H01L29/66833 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/28273 ,  H01L27/11563 ,  H01L29/42332 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/66825 ,  H01L29/7881 ,  Y10S977/773

    摘要： A method for producing a memory device with nanoparticles, including steps of: a) forming, in a substrate based on at least one semi-conductor, source and drain regions, and at least one first dielectric on at least one zone of the substrate arranged between the source and drain regions and intended to form a channel of the memory device, b) depositing of at least one ionic liquid that is an organic salt or mixture of organic salts in a liquid state, wherein nanoparticles of at least one electrically conductive material are suspended in the ionic liquid, said ionic liquid covering at least said first dielectric, c) forming a deposition of said nanoparticles at least on said first dielectric, d) removing the ionic liquid remaining on the first dielectric, and e) forming at least one second dielectric and at least one control gate on at least one part of the nanoparticles deposited on the first dielectric.

    摘要翻译： 一种制备具有纳米颗粒的存储器件的方法，包括以下步骤：a）在基板中基于至少一个半导体源极和漏极区域形成基底，并且至少一个第一电介质在衬底的至少一个区域上被布置 在源极和漏极区之间并且旨在形成存储器件的通道，b）沉积至少一种离子液体，其是液态的有机盐或有机盐的混合物，其中至少一种导电材料的纳米颗粒 悬浮在离子液体中，所述离子液体至少覆盖所述第一电介质，c）至少在所述第一电介质上形成所述纳米颗粒的沉积，d）去除残留在第一电介质上的离子液体，和e）至少形成 在沉积在第一电介质上的纳米颗粒的至少一部分上的一个第二电介质和至少一个控制栅极。