利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

39 条记录 (耗时 0.026 秒)

    Substrate removal as a functional of sonic analysis
    2.
    发明授权
    Substrate removal as a functional of sonic analysis 失效
    基底去除作为声波分析的函数

    公开(公告)号：US06350624B1

    公开(公告)日：2002-02-26

    申请号：US09409304

    申请日：1999-09-29

    申请人： Rama R. Goruganthu ,  Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring

    发明人： Rama R. Goruganthu ,  Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring

    IPC分类号： H01L21302

    CPC分类号： G01N1/32 ,  G01R31/311

    摘要： Substrate removal for post-manufacturing analysis of a semiconductor device is enhanced via a method and system that use sonic energy in the control of the removal process. According to an example embodiment of the present invention, sonic energy is reflected off of a region of a semiconductor chip having a portion of substrate removed from the back side of the chip. The reflections are detected and used to determine the thickness of substrate in the back side. In this manner, the substrate removal process can be efficiently and accurately controlled.

    摘要翻译： 通过在控制去除过程中使用声能的方法和系统来增强用于半导体器件后制造分析的衬底去除。 根据本发明的示例性实施例，声能被从芯片的背面去除的衬底的一部分的半导体芯片的区域反射出来。 检测反射并用于确定背面底物的厚度。 以这种方式，可以有效且准确地控制基板去除处理。

    Atomic force microscopy and signal acquisition via buried insulator
    4.
    发明授权
    Atomic force microscopy and signal acquisition via buried insulator 失效
    原子力显微镜和通过埋层绝缘子的信号采集

    公开(公告)号：US06448096B1

    公开(公告)日：2002-09-10

    申请号：US09864656

    申请日：2001-05-23

    申请人： Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring ,  Daniel L. Stone

    发明人： Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring ,  Daniel L. Stone

    IPC分类号： H01L2100

    CPC分类号： G01Q60/30 ,  G01R31/303 ,  Y10S977/854

    摘要： Analysis of a semiconductor die having silicon-on-insulator (SOI) structure is enhanced by accessing the circuitry within the die from the back side without necessarily breaching the insulator layer of the SOI structure. According to an example embodiment of the present invention, a semiconductor die having a SOI structure and a backside opposite circuitry in a circuit side is analyzed. An atomic force microscope is scanned across a thinned portion of the back side. The microscope responds to an electrical characteristic, such as a logic state, coupled from circuitry via the insulator portion of the die over which the microscope is being scanned. The response of the microscope to the die is detected and used to detect an electrical characteristic of the die.

    摘要翻译： 通过从背面访问管芯内的电路而不必破坏SOI结构的绝缘体层来增强具有绝缘体上硅（SOI）结构的半导体管芯的分析。 根据本发明的示例性实施例，分析了具有SOI结构的半导体管芯和电路侧的背面相反的电路。 原子力显微镜扫描在背面的薄部分。 显微镜响应诸如逻辑状态的电特性，该电特性通过显微镜正被扫描的裸片的绝缘体部分从电路耦合。 检测显微镜对管芯的响应，并用于检测管芯的电气特性。

    Circuit access and analysis for a SOI flip-chip die
    5.
    发明授权
    Circuit access and analysis for a SOI flip-chip die 失效
    SOI倒装芯片的电路访问和分析

    公开(公告)号：US06448095B1

    公开(公告)日：2002-09-10

    申请号：US09755013

    申请日：2001-01-05

    申请人： Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring ,  Daniel L. Stone

    发明人： Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring ,  Daniel L. Stone

    IPC分类号： H01L2100

    CPC分类号： H01L22/20 ,  G01R31/307

    摘要： Analysis of a flip-chip type IC die having SOI structure is enhanced via analysis and repair of the die that make possible analysis that would typically result in the die being in a state of disrepair. According to an example embodiment of the present invention, a focused ion beam (FIB) is directed at a back side of a flip-chip die having a circuitry in a circuit side opposite a back side, wherein the circuitry including silicon on insulator (SOI) structure. The FIB is used to remove a selected portion of substrate including a portion of the insulator of the SOI structure from the die. The removed substrate exposes an insulator region in the die, and a signal is coupled from circuitry in the die via the exposed insulator region and used to analyze the die. Material is deposited in the exposed region and the selected portion of the die that had been removed is reconstructed. The reconstruction takes place before, during or after the signal is coupled, depending upon the die being analyzed and the type of analysis being performed. In this manner, access for analyzing the die is improved via the ability to couple a signal through the insulator and to repair a portion of the die that has been altered for analysis. Analysis that would otherwise be destructive can be performed and the ability of the die to function after analysis can be maintained.

    摘要翻译： 具有SOI结构的倒装芯片型IC芯片的分析通过分析和修复模具得到增强，这使得可能的分析通常导致模具处于失修状态。 根据本发明的一个示例性实施例，聚焦离子束（FIB）指向倒装芯片的背面，该倒装芯片的背面具有电路侧的电路，其中包括绝缘体上的硅（SOI） ） 结构体。 FIB用于从芯片去除包括SOI结构的绝缘体的一部分的衬底的选定部分。 去除的衬底暴露了管芯中的绝缘体区域，并且信号通过暴露的绝缘体区域从管芯中的电路耦合并用于分析管芯。 材料沉积在暴露的区域中，并且已经去除的模具的选定部分被重建。 重建在信号耦合之前，期间或之后进行，这取决于正在分析的管芯和正在执行的分析的类型。 以这种方式，通过能够通过绝缘体耦合信号并修复已经被改变以用于分析的芯片的一部分的能力来提高用于分析芯片的访问。 否则可以进行破坏性的分析，可以保持分析后的模具功能的能力。

    Substrate removal as a function of acoustic analysis
    8.
    发明授权
    Substrate removal as a function of acoustic analysis 失效
    底物去除作为声学分析的一个功能

    公开(公告)号：US06277656B1

    公开(公告)日：2001-08-21

    申请号：US09410145

    申请日：1999-09-30

    申请人： Rama R. Goruganthu ,  Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring

    发明人： Rama R. Goruganthu ,  Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring

    IPC分类号： H01L2100

    CPC分类号： H01L22/26 ,  B23K26/03 ,  H01L21/67092 ,  H01L21/76898

    摘要： A substrate removal approach involves sensing acoustic energy in an integrated circuit as a function of substrate in the integrated circuit being removed. According to an example embodiment of the present invention, a method for substrate removal includes removing a portion of substrate from the back side of a semiconductor chip circuitry near a circuit side and opposite the back side. The substrate is removed as a function of detected acoustic energy propagating through the device. The detected acoustic energy can be correlated to a parameter and used for controlling the substrate removal process, improving the ability to efficiently and accurately test semiconductor devices.

    摘要翻译： 衬底去除方法包括在集成电路中检测作为去除的集成电路中的衬底的函数的集成电路中的声能。 根据本发明的一个示例性实施例，一种用于基板去除的方法包括从半导体芯片电路的靠近电路侧并与背面相反的背面去除基板的一部分。 作为通过装置传播的检测到的声能的函数去除衬底。 检测到的声能可以与参数相关，并用于控制衬底移除过程，提高了有效和准确地测试半导体器件的能力。

    Led in substrate with back side monitoring
    9.
    发明授权
    Led in substrate with back side monitoring 失效
    带背面监测基板

    公开(公告)号：US06248600B1

    公开(公告)日：2001-06-19

    申请号：US09409976

    申请日：1999-09-30

    申请人： Michael R. Bruce ,  Jeffrey D. Birdsley ,  Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis

    发明人： Michael R. Bruce ,  Jeffrey D. Birdsley ,  Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis

    IPC分类号： H01L2100

    CPC分类号： H01L21/306

    摘要： Post-manufacturing analysis of a semiconductor device is enhanced via a method that uses a light emitting diode (LED) formed in a semiconductor die. According to an example embodiment of the present invention, a LED is formed within a semiconductor die having a circuit side opposite a back side. The LED is activated and generates radiation. Substrate is removed from the device, and the amount of radiation that passes through the substrate is detected. The amount of radiation that passes through the die is a function of the absorption characteristics of the die and the substrate thickness. By detecting the radiation and using the absorption characteristics of the die, the amount of substrate remaining in the back side of the die is determined and the substrate removal process is controlled therefrom.

    摘要翻译： 通过使用形成在半导体管芯中的发光二极管（LED）的方法来增强半导体器件的制造后分析。 根据本发明的示例性实施例，在具有与背面相对的电路侧的半导体管芯内形成LED。 LED被激活并产生辐射。 从器件中去除衬底，并检测穿过衬底的辐射量。 通过模具的辐射量是模具的吸收特性和基板厚度的函数。 通过检测辐射并使用模具的吸收特性，确定保留在模具背面的基板的量，并从中控制基板去除过程。

    Semiconductor die analysis via fiber optic communication
    10.
    发明授权
    Semiconductor die analysis via fiber optic communication 失效
    通过光纤通信进行半导体芯片分析

    公开(公告)号：US06850081B1

    公开(公告)日：2005-02-01

    申请号：US10164506

    申请日：2002-06-05

    申请人： Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring ,  Daniel L. Stone

    发明人： Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring ,  Daniel L. Stone

    IPC分类号： G01R31/28 ,  G01R31/319 ,  G01R31/303

    CPC分类号： G01R31/2884 ,  G01R31/31905

    摘要： Semiconductor analysis is improved via the use of fiber optic communications. According to an example embodiment of the present invention, a stimulation device is adapted to stimulate an integrated circuit die, and the die generates a response to the stimulation. An optical signal generator, either incorporated into the die or coupled to the die, detects the response, converts the response to an optical signal and transmits the optical signal. The optical signal is received at a testing arrangement adapted to analyze the die therefrom. The optical signal is used to analyze the die, improving signal quality and the ability to perform high-speed analysis of the die.

    摘要翻译： 通过使用光纤通信改进了半导体分析。 根据本发明的示例性实施例，刺激装置适于刺激集成电路管芯，并且管芯产生对刺激的响应。 将光信号发生器并入芯片或耦合到管芯，检测响应，将响应转换为光信号并发送光信号。 光学信号在适于从其分析模具的测试装置处被接收。 光信号用于分析芯片，提高信号质量和对芯片进行高速分析的能力。