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    Method of manufacturing a light emitting diode element
    1.
    发明授权
    Method of manufacturing a light emitting diode element 有权
    制造发光二极管元件的方法

    公开(公告)号：US08173456B2

    公开(公告)日：2012-05-08

    申请号：US12648308

    申请日：2009-12-29

    申请人： Jenq-Dar Tsay ,  Suh-Fang Lin ,  Yu-Hsiang Chang ,  Yih-Der Guo ,  Sheng-Huei Kuo ,  Wei-Hung Kuo ,  Hsun-Chih Liu

    发明人： Jenq-Dar Tsay ,  Suh-Fang Lin ,  Yu-Hsiang Chang ,  Yih-Der Guo ,  Sheng-Huei Kuo ,  Wei-Hung Kuo ,  Hsun-Chih Liu

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0079 ,  H01L33/20 ,  H01L33/405 ,  H01L33/44

    摘要： A method of manufacturing a light emitting diode element is provided. A first patterned semi-conductor layer, a patterned light emitting layer, and a second patterned semi-conductor layer are sequentially formed on an epitaxy substrate so as to form a plurality of epitaxy structures, wherein the first patterned semi-conductor layer has a thinner portion in a non-epitaxy area outside the epitaxy structures. A passivation layer covering the epitaxy structures and the thinner portion is formed. The passivation layer covering on the thinner portion is partially removed to form a patterned passivation layer. A patterned reflector is formed directly on each of the epitaxy structures. The epitaxy structures are bonded to a carrier substrate. A lift-off process is performed to separate the epitaxy structures from the epitaxy substrate. An electrode is formed on each of the epitaxy structures far from the patterned reflector.

    摘要翻译： 提供一种制造发光二极管元件的方法。 在外延基板上依次形成第一图案化半导体层，图案化发光层和第二图案化半导体层，以形成多个外延结构，其中第一图案化半导体层具有较薄的 部分在外延结构外的非外延区域。 形成覆盖外延结构和较薄部分的钝化层。 覆盖在较薄部分上的钝化层被部分地去除以形成图案化的钝化层。 在每个外延结构上直接形成图案化反射体。 外延结构被结合到载体衬底上。 进行剥离处理以将外延结构与外延基板分离。 在远离图案化反射器的每个外延结构上形成电极。

    METHOD OF MANUFACTURING A LIGHT EMITTING DIODE ELEMENT
    2.
    发明申请
    METHOD OF MANUFACTURING A LIGHT EMITTING DIODE ELEMENT 有权
    制造发光二极管元件的方法

    公开(公告)号：US20110003410A1

    公开(公告)日：2011-01-06

    申请号：US12648308

    申请日：2009-12-29

    申请人： Jenq-Dar Tsay ,  Suh-Fang Lin ,  Yu-Hsiang Chang ,  Yih-Der Guo ,  Sheng-Huei Kuo ,  Wei-Hung Kuo ,  Hsun-Chih Liu

    发明人： Jenq-Dar Tsay ,  Suh-Fang Lin ,  Yu-Hsiang Chang ,  Yih-Der Guo ,  Sheng-Huei Kuo ,  Wei-Hung Kuo ,  Hsun-Chih Liu

    IPC分类号： H01L33/48 ,  H01L33/60

    CPC分类号： H01L33/0079 ,  H01L33/20 ,  H01L33/405 ,  H01L33/44

    摘要： A method of manufacturing a light emitting diode element is provided. A first patterned semi-conductor layer, a patterned light emitting layer, and a second patterned semi-conductor layer are sequentially formed on an epitaxy substrate so as to form a plurality of epitaxy structures, wherein the first patterned semi-conductor layer has a thinner portion in a non-epitaxy area outside the epitaxy structures. A passivation layer covering the epitaxy structures and the thinner portion is formed. The passivation layer covering on the thinner portion is partially removed to form a patterned passivation layer. A patterned reflector is formed directly on each of the epitaxy structures. The epitaxy structures are bonded to a carrier substrate. A lift-off process is performed to separate the epitaxy structures from the epitaxy substrate. An electrode is formed on each of the epitaxy structures far from the patterned reflector.

    摘要翻译： 提供一种制造发光二极管元件的方法。 在外延基板上依次形成第一图案化半导体层，图案化发光层和第二图案化半导体层，以形成多个外延结构，其中第一图案化半导体层具有较薄的 部分在外延结构外的非外延区域。 形成覆盖外延结构和较薄部分的钝化层。 覆盖在较薄部分上的钝化层被部分地去除以形成图案化的钝化层。 在每个外延结构上直接形成图案化反射体。 外延结构被结合到载体衬底上。 进行剥离处理以将外延结构与外延基板分离。 在远离图案化反射器的每个外延结构上形成电极。

    Nitride semiconductor structure and method for manufacturing the same
    4.
    发明申请
    Nitride semiconductor structure and method for manufacturing the same 有权
    氮化物半导体结构及其制造方法

    公开(公告)号：US20100090312A1

    公开(公告)日：2010-04-15

    申请号：US12584942

    申请日：2009-09-14

    申请人： Yih-Der Guo ,  Suh-Fang Lin ,  Wei-Hung Kuo ,  Po-Chun Liu ,  Tung-Wei Chi ,  Chu-Li Chao ,  Jenq-Dar Tsay

    发明人： Yih-Der Guo ,  Suh-Fang Lin ,  Wei-Hung Kuo ,  Po-Chun Liu ,  Tung-Wei Chi ,  Chu-Li Chao ,  Jenq-Dar Tsay

    IPC分类号： H01L29/20 ,  H01L21/20 ,  H01L21/04

    CPC分类号： C30B25/02 ,  C23C14/0005 ,  C23C14/021 ,  C23C14/0617 ,  C23C16/01 ,  C23C16/0227 ,  C23C16/303 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/0079 ,  H01S2304/12

    摘要： A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes an epitaxy substrate, a nitride pillar layer, a nitride semiconductor layer, and a mask layer. The nitride pillar layer includes a plurality of first patterned arranged pillars and a plurality of second patterned arranged pillars. The nitride pillar layer is formed on the epitaxy substrate. A width of a cross-section of each of the second patterned arranged pillars is smaller than a width of a cross-section of each of the first patterned arranged pillars, and a distance among each of the second patterned arranged pillars is longer than a distance among each of the first patterned arranged pillars. Surfaces of the epitaxy substrate, the first patterned arranged pillars, and the second patterned arranged pillars are covered by the mask layer. The nitride semiconductor layer is formed on the nitride pillar layer.

    摘要翻译： 提供一种氮化物半导体衬底及其制造方法。 氮化物半导体衬底包括外延衬底，氮化物衬底层，氮化物半导体层和掩模层。 氮化物柱层包括多个第一图案化排列的柱和多个第二图案化排列的柱。 在外延基板上形成氮化物柱层。 每个第二图案化排列的柱的横截面的宽度小于每个第一图案化排列的柱的横截面的宽度，并且每个第二图案化排列的柱之间的距离长于距离 在每个第一图案化排列的柱子中。 外延衬底的表面，第一图案化排列的柱和第二图案化排列的柱被掩模层覆盖。 氮化物半导体层形成在氮化物柱层上。

    NITRIDE SEMICONDUCTOR SUBSTRATE
    5.
    发明申请
    NITRIDE SEMICONDUCTOR SUBSTRATE 审中-公开
    氮化物半导体基板

    公开(公告)号：US20100181577A1

    公开(公告)日：2010-07-22

    申请号：US12749495

    申请日：2010-03-29

    申请人： Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

    发明人： Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

    IPC分类号： H01L29/20 ,  H01L29/12

    CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/0079

    摘要： There is provided a nitride semiconductor substrate. The nitride semiconductor substrate comprises a substrate, a patterned epitaxy layer, a protective layer and a gallium nitride semiconductor layer. The patterned epitaxy layer is disposed on the substrate, wherein the patterned epitaxy layer comprises a pier structure and the patterned epitaxy layer has an upper surface and a lower surface opposite to the upper surface and the lower surface faces to the substrate. The protective layer covers a portion of the upper surface of the patterned epitaxy layer to expose a top surface of the pier structure. The gallium nitride (GaN) semiconductor layer extends substantially across an entire area above the patterned epitaxy layer and connected to the exposed top surface of the pier structure.

    摘要翻译： 提供了一种氮化物半导体衬底。 氮化物半导体衬底包括衬底，图案化外延层，保护层和氮化镓半导体层。 图案化外延层设置在基板上，其中图案化外延层包括墩结构，并且图案化外延层具有上表面和与上表面相对的下表面，下表面面向基板。 保护层覆盖图案化外延层的上表面的一部分以暴露码头结构的顶表面。 氮化镓（GaN）半导体层基本上延伸在图案化外延层上方的整个区域上并连接到暴露的墩结构的顶表面。

    METHOD FOR FORMING A NITRIDE SEMICONDUCTOR LAYER AND METHOD FOR SEPARATING THE NITRIDE SEMICONDUCTOR LAYER FROM THE SUBSTRATE
    6.
    发明申请
    METHOD FOR FORMING A NITRIDE SEMICONDUCTOR LAYER AND METHOD FOR SEPARATING THE NITRIDE SEMICONDUCTOR LAYER FROM THE SUBSTRATE 有权
    形成氮化物半导体层的方法和从基板分离氮化物半导体层的方法

    公开(公告)号：US20080272378A1

    公开(公告)日：2008-11-06

    申请号：US12137519

    申请日：2008-06-11

    申请人： Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

    发明人： Yih-Der Guo ,  Chih-Ming Lai ,  Jenq-Dar Tsay ,  Po-Chun Liu

    IPC分类号： H01L29/15 ,  H01L21/31

    CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/0079

    摘要： There is provided a method of forming a nitride semiconductor layer, including the steps of firstly providing a substrate on which a patterned epitaxy layer with a pier structure is formed. A protective layer is then formed on the patterned epitaxy layer, exposing a top surface of the pier structure. Next, a nitride semiconductor layer is formed over the patterned epitaxy layer connected to the nitride semiconductor layer through the pier structure, wherein the nitride semiconductor layer, the pier structure, and the patterned epitaxy layer together form a space exposing a bottom surface of the nitride semiconductor layer. Thereafter, a weakening process is performed to remove a portion of the bottom surface of the nitride semiconductor layer and to weaken a connection point between the top surface of the pier structure and the nitride semiconductor layer. Finally, the substrate is separated from the nitride semiconductor layer through the connection point.

    摘要翻译： 提供一种形成氮化物半导体层的方法，包括以下步骤：首先提供其上形成有墩结构的图案化外延层的基板。 然后在图案化的外延层上形成保护层，露出墩结构的顶表面。 接下来，在通过墩结构连接到氮化物半导体层的图案化外延层上形成氮化物半导体层，其中氮化物半导体层，墩结构和图案化外延层一起形成暴露氮化物的底表面的空间 半导体层。 此后，执行弱化处理以去除氮化物半导体层的底表面的一部分并削弱墩结构的顶表面和氮化物半导体层之间的连接点。 最后，通过连接点将衬底与氮化物半导体层分离。

    Island submount and a method thereof
    8.
    发明授权
    Island submount and a method thereof 有权
    岛基座及其方法

    公开(公告)号：US07868346B2

    公开(公告)日：2011-01-11

    申请号：US11948464

    申请日：2007-11-30

    申请人： Yih-Der Guo ,  Jenq-Dar Tsay ,  Po-Chun Liu

    发明人： Yih-Der Guo ,  Jenq-Dar Tsay ,  Po-Chun Liu

    IPC分类号： H01L33/48

    CPC分类号： H05K3/4007 ,  H01L33/486 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/00014 ,  H05K1/0306 ,  H05K1/053 ,  H05K1/111 ,  H05K1/113 ,  H05K2201/09045 ,  H05K2201/10106 ,  Y10T29/49155 ,  H01L2224/05599

    摘要： An island submount used for carrying at least one light-emitting element having at least one electrical contact. The island submount includes a substrate, at least one island structure having a top surface and an inclined surface, and a conductive layer. The island structure is located on the substrate and corresponds to the electrical contact. The conductive layer is formed on the surface of the island structure and at least covers the top surface, so as to be electrically connected with the electrical contact. The island submount is capable of enhancing the light extraction efficiency of the light-emitting element, and avoids the energy loss due to re-absorption when the light emerging from below the light-emitting element is reflected back to the light-emitting element.

    摘要翻译： 用于承载至少一个具有至少一个电触头的发光元件的岛基座。 岛基座包括基板，具有顶表面和倾斜表面的至少一个岛结构和导电层。 岛结构位于基板上并对应于电接触。 导电层形成在岛状结构的表面上，并且至少覆盖顶表面，从而与电触点电连接。 岛基座能够增强发光元件的光提取效率，并且当从发光元件下方出射的光被反射回发光元件时，可以避免由于再吸收而导致的能量损失。

    Fabricating method of nitride semiconductor substrate and composite material substrate
    9.
    发明授权
    Fabricating method of nitride semiconductor substrate and composite material substrate 失效
    氮化物半导体衬底和复合材料衬底的制造方法

    公开(公告)号：US07687378B2

    公开(公告)日：2010-03-30

    申请号：US11467167

    申请日：2006-08-25

    申请人： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

    发明人： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

    IPC分类号： H01L21/20

    CPC分类号： H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

    摘要： A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.

    摘要翻译： 提供一种氮化物半导体衬底的制造方法。 首先，提供包括第一基材，层叠在第一基材上的氮化物半导体模板层和层叠在氮化物半导体模板层上的第一电介质层的第一基板。 然后，对第一电介质层和氮化物半导体模板层进行构图，并且提供包括堆叠在第二基底材料上的第二基底材料和第二电介质层的第二基底。 接下来，通过接合和转移工艺将第一衬底的氮化物半导体模板层和第一电介质层转移到第二衬底的第二电介质层上，然后从氮化物半导体模板层通过 外延工艺。 之后，分离氮化物半导体厚膜和第二基板。

    FABRICATING METHOD OF NITRIDE SEMICONDUCTOR SUBSTRATE AND COMPOSITE MATERIAL SUBSTRATE
    10.
    发明申请
    FABRICATING METHOD OF NITRIDE SEMICONDUCTOR SUBSTRATE AND COMPOSITE MATERIAL SUBSTRATE 失效
    氮化物半导体衬底和复合材料衬底的制备方法

    公开(公告)号：US20080006849A1

    公开(公告)日：2008-01-10

    申请号：US11467167

    申请日：2006-08-25

    申请人： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

    发明人： Po-Chun Liu ,  Wen-Yueh Liu ,  Chih-Ming Lai ,  Yih-Der Guo ,  Jenq-Dar Tsay

    IPC分类号： H01L29/76 ,  H01L29/745

    CPC分类号： H01L29/2003 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L21/2007

    摘要： A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.

    摘要翻译： 提供一种氮化物半导体衬底的制造方法。 首先，提供包括第一基材，层叠在第一基材上的氮化物半导体模板层和层叠在氮化物半导体模板层上的第一电介质层的第一基板。 然后，对第一电介质层和氮化物半导体模板层进行构图，并且提供包括堆叠在第二基底材料上的第二基底材料和第二电介质层的第二基底。 接下来，通过接合和转移工艺将第一衬底的氮化物半导体模板层和第一电介质层转移到第二衬底的第二电介质层上，然后从氮化物半导体模板层通过 外延工艺。 之后，分离氮化物半导体厚膜和第二基板。